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Seong Keun Kim, Wan Don Kim, and Cheol Seong Hwang Atomic Layer Deposition of Titanium Oxide Thin Films sing O3 for MIM Capacitor of Next Generation Memory Devices Á¦ 14ȸ À¯Àüü¹°¼º ½ÉÆ÷Áö¿ò ¹× Á¦ 6ȸ °À¯Àüü¼ÒÀÚ/¼ÒÀç ¿öÅ©¼¥, ¹«ÁÖ¸®Á¶Æ® Ƽ·ÑÈ£ÅÚ, 2005³â 2¿ù 13ÀÏ-15ÀÏ |
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Á¶±Ý¼®, ½ÉÁؼ·, ÀÌÇöÁÖ, ¹Úµ¿¿¬, Ȳö¼º A Comparison of Different Initial Growth Behavior of Lead Oxide Thin Film on Pt and Ir Substrates by Liquid Delivery MOCVD Á¦ 14ȸ À¯Àüü¹°¼º ½ÉÆ÷Áö¿ò ¹× Á¦ 6ȸ °À¯Àüü¼ÒÀÚ/¼ÒÀç ¿öÅ©¼¥, ¹«ÁÖ¸®Á¶Æ® Ƽ·ÑÈ£ÅÚ, 2005³â 2¿ù 13ÀÏ-15ÀÏ |
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B. J. Choi, D. S. Jung, S. K. Kim, S. Choi, J. H. Oh, C. Rohde, H. J. Kim, C. S. Hwang, R. Waser, B. Reichenberg, S. Tiedke Resistive switching mechanism of TiO2 thin films grown by atomic-layer-deposition Á¦ 14ȸ À¯Àüü¹°¼º ½ÉÆ÷Áö¿ò ¹× Á¦ 6ȸ °À¯Àüü¼ÒÀÚ/¼ÒÀç ¿öÅ©¼¥, ¹«ÁÖ¸®Á¶Æ® Ƽ·ÑÈ£ÅÚ, 2005³â 2¿ù 13ÀÏ-15ÀÏ |
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