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T. J. Park, M. J. Cho, S. H. Hong, M. H. Seo, J. H. Kim, J. H. Park, C. S. Hwang

The Atomic-layer-deposited HfO2 gate dielectric films ; chemistry if interface and electrical performances

AVS 52nd International Symposium & Exhibition, Hynes convention center, Boston, MA, USA, October 30-November 4 (2005)
32

D. Eom, S. Y. No, C. S. Hwang, H. J. Kim

Investigation of annealing efect and suppression of hydration and silicate formation of La2O3 thin films

AVS 52nd International Symposium & Exhibition, Hynes convention center, Boston, MA, USA, October 30-November 4 (2005)
31

B. S. Kim, H. S. Seo, C. S. Hwang, S. Y. Hang, J. Y. Kim, K. H. Lee, H. J. Lim, C. Y. Yoo, S. T. Kim, H. J. Kim

Nucleation behavior of Ru thin films prepared by MOVCD on TiN substrate with TiCl4 pre-treatment

AVS 52nd International Symposium & Exhibition, Hynes convention center, Boston, MA, USA, October 30-November 4 (2005)
30

S. Y. No, D. Eom, C. S. Hwang, H. J. Kim

Characteristics of lanthanum oxide prepared using La(iPrCp)3 and H2O

AVS 52nd International Symposium & Exhibition, Hynes convention center, Boston, MA, USA, October 30-November 4 (2005)
29

J. H. Jang, S. H. Hong, T. J. Park, J. H. Heo, S. R. Yang, M. Y. Kim and C. S. Hwang

Improvement in Thermal Stability of MOCVD HfO2 Films Using an ALD SiNx Interfacial Layer

The Electrochemical Society 208th meeting, Westin Bonaventure Hotel, Los Angeles, USA, October 16-21 (2005)
28

Tae Joo Park, Jeong Hwan Kim, Sug Hun Hong, Minha Seo, and Cheol Seong Hwang

Electrical properties of high-k HfO2 films on Si1-xGex substrates with pre-treatment using O3 and NH3

The Electrochemical Society 208th meeting, Westin Bonaventure Hotel, Los Angeles, USA, October 16-21 (2005)
27

Minha Seo, Seong Keun Kim, Kyung-Min Kim, Tae Joo Park, Jeong Hwan Kim, Cheol Seong Hwang, and Ho Jin Cho

Crystallization and wet etching characteristics of atomic layer deposited HfO2 films using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) precursor and O3 oxidant

The Electrochemical Society 208th meeting, Westin Bonaventure Hotel, Los Angeles, USA, October 16-21 (2005)
26

S. H. Hong, T. J. Park, J. H. Kim, S. K. Kim, M. J. Cho, J. Y. Won, R. J. Jeong, and C. S. Hwang

Influence of an in-situ formed interfacial SiNx layer on the electrical performance and thermal stability of high-k HfO2 films

The Electrochemical Society 208th meeting, Westin Bonaventure Hotel, Los Angeles, USA, October 16-21 (2005)
25

Jeong Hwan Kim, Tae Joo Park, Sug Hun Hong, Minha Seo, Jae Hyuk Jang, Mi Young Kim, and Cheol Seong Hwang

Influence of the deposition temperature of atomic-layer-deposited HfO2 films on the chemical structure of interface and interface trap density

The Electrochemical Society 208th meeting, Westin Bonaventure Hotel, Los Angeles, USA, October 16-21 (2005)
24

Cheol Seong Hwang, and Doo Seok Jeong

Current Transport Mechanism Through High-k HfO2 Films On Si

The 17th International Symposium on Integrated Ferroelectrics, Hotel Equatorial, Shanghi, China, April 17-20 (2005)