8 |
Low temperature MOCVD PZT films having 50-nm-thickness for FeRAM applications 6th International Workshop on Oxide Electronics, U. of Maryland, USA, Dec. 6 1999
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7 |
DooYoung Yang, Cheol-Hoon Yang, Young-Ki Han, Chul-Ju Hwang, and Cheol Seong Hwang, Jaehoo Park MOCVD of (Ba,Sr)TiO3 using single source of Ba(methd)2, Sr(methd)2, and Ti(mpd)(thd)2 in a new warm wall reactor for larger wafer process MRS Fall Meeting, Boston, USA, Nov. 28 1999
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6 |
¼ÛÀç¿ø, ¹ÚÀçÈÄ, Ȳö¼º °íÁýÀû ¸Þ¸ð¸®¼ÒÀÚ¸¦ À§ÇÑ TiN & (Ti,Al)N È®»ê¹æÁö¸·ÀÇ »êȰŵ¿ Çѱ¹¿ä¾÷ÇÐȸ, ³ªÁÖ µ¿½Å´ëÇб³, 1999³â 10¿ù 22ÀÏ |
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±Ç¿À¼º, Ȳö¼º, È«¼®°æ º¸È£¸· ÁõÂø ÈÄ ¿ÈµÈ FeRAMÀÇ Àü±âÀå Àڱؿ¡ ÀÇÇÑ È¸º¹ °Åµ¿ Çѱ¹¿ä¾÷ÇÐȸ, ³ªÁÖ µ¿½Å´ëÇб³, 1999³â 10¿ù 22ÀÏ |
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Á¶¿µÁø, ÀÌÀçºó, Ȳö¼º, ¾çÃ¶ÈÆ Iom Beam Sputtering¹ýÀ¸·Î ÁõÂøÇÑ (Ba,Sr)TiO3¹Ú¸·ÀÇ À¯Àü Ư¼º¿¡ ÈÄ¼Ó ¿Ã³¸®°¡ ¹ÌÄ¡´Â ¿µÇâ Çѱ¹¿ä¾÷ÇÐȸ, ³ªÁÖ µ¿½Å´ëÇб³, 1999³â 10¿ù 22ÀÏ |
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¹ÚÀçÈÄ, Ȳö¼º, ¾çµÎ¿µ, ¾çÃ¶ÈÆ, ±èµ¿Çö, ÇÑ¿µ±â, ȲöÁÖ Àú¿Â MOCVD·Î ÁõÂøÇÑ (Ba,Sr)TiO3/Ru¹Ú¸·ÀÇ ¿Ã³¸® Á¶°Ç¿¡ µû¸¥ »êÈ °Åµ¿ Çѱ¹¿ä¾÷ÇÐȸ, ³ªÁÖ µ¿½Å´ëÇб³, 1999³â 10¿ù 22ÀÏ
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2 |
°»ó¿, ÃÖ±¹Çö, Ȳö¼º, ¼®Ã¢±æ, ±èÇüÁØ MOCVD¹ýÀ» ÀÌ¿ëÇÑ Ru ¹Ú¸·ÀÇ ÁõÂø ¹× Ư¼º ºÐ¼® Çѱ¹Áø°øÇÐȸ, Á¦ÁÖ´ëÇб³, 1999³â 7¿ù 3ÀÏ
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°»ó¿, ÃÖ±¹Çö, Ȳö¼º, ¼®Ã¢±æ, ±èÇüÁØ MOCVD¹ýÀ» ÀÌ¿ëÇÑ Ru ¹Ú¸·ÀÇ ÁõÂø ¹× Ư¼º ºÐ¼® Çѱ¹¿ä¾÷ÇÐȸ, ¼º±Õ°ü´ëÇб³, 1999³â 4¿ù 23ÀÏ
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