| 11 |
Young-soh Park Sang-in Lee, Cheol-seong Hwang, Doo-sup Hwang, Hag-Ju Cho Methods of forming integrated circuit capacitors using metal reflow techniques ¹Ì±¹, 06001660, 1999. 12. 14.
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| 10 |
Ȳö¼º, ÀÌÃáÈ£ »êÈÆ¼Åº¸¶±×³×½· ¹Ú¸·À» ÀÌ¿ëÇÑ FRAM ¹× FFRAM ¼ÒÀÚ ´ëÇѹα¹, 10-0238210, 1999. 10. 13.
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| 9 |
¹Ú¿µ¼Ò, ÀÌ»óÀÎ, Ȳö¼º, ȲµÎ¼·, Á¶ÇÐÁÖ ¹é±ÝÁ· ±Ý¼ÓÃþ Çü¼º¹æ¹ý ¹× À̸¦ ÀÌ¿ëÇÑ Ä¿ÆÐ½ÃÅÍ Á¦Á¶ ¹æ¹ý ´ëÇѹα¹, 10-0230418, 1999. 08. 23.
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| 8 |
Ȳö¼º, ÀÌÁ¾¸í ¿äöÇü ±Ý¼Ó¸·°ú ±× Çü¼º ¹æ¹ý, ¿äöÇü Àü±Ø ¹× À̸¦ ÀÌ¿ëÇÑ Ä³ÆÐ½ÃÅÍÀÇ Á¦Á¶ ¹æ¹ý ´ëÇѹα¹, 10-0230361, 1999. 08. 23.
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| 7 |
Byong-taek Lee and Cheol-seong Hwang Method of forming floating-gate FFRAM devices ¹Ì±¹, 05940705, 1999. 08. 17.
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| 6 |
±èÁø¿ø, Ȳö¼º, ÀÌ»óÀÎ ¹ÝµµÃ¼ ¼ÒÀÚÀÇ ÄÜÅà ¹è¼± ¹æ¹ý ¹× À̸¦ ÀÌ¿ëÇÑ Ä³ÆÐ½ÃÅÍ Á¦Á¶ ¹æ¹ý ´ëÇѹα¹, 10-0227843, 1999. 08. 05.
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| 5 |
Ȳö¼º ¹ÝµµÃ¼ ¸Þ¸ð¸® ¼ÒÀÚÀÇ Á¦Á¶ ¹æ¹ý ´ëÇѹα¹ ƯÇã(°ø°³), 1999-72019, 1999. 07. 15.
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| 4 |
Ȳö¼º, À̺´Åà ¹ÝµµÃ¼ ÀåÄ¡ÀÇ °À¯Àüü Ä¿ÆÐ½ÃÅÍ ¹× ±× Á¦Á¶ ¹æ¹ý ´ëÇѹα¹, 10-0224729, 1999. 07. 15.
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| 3 |
Jin-Won Kim, Cheal-Seong Hwang, Sang-in Lee Dual deposition methods for forming contact metallizations, capacitors, and memory devices ¹Ì±¹, 05918118, 1999. 06. 29.
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| 2 |
À̺´ÅÃ, Ȳö¼º Æä·ÎÀÏ·ºÆ®¸¯ ÇÃ·ÎÆÃ °ÔÀÌÆ® ·¥À» ±¸ºñÇÏ´Â ¹ÝµµÃ¼ ¸Þ¸ð¸® µð¹ÙÀ̽º ¹× ±× Á¦Á¶ ¹æ¹ý Çѱ¹ ´ëÇѹα¹, 10-0219519, 1999. 06. 16.
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