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13

Hideki Horii, Cheol Seong Hwang

Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereof

¹Ì±¹, 06177284, 1998. 09. 18.

12

Ȳö¼º, ÀÌÃáÈ£

Ferroelectric structure including MgTiO3 passivation

¹Ì±¹, 05834804, 1998.11.10.

11

Young-soh Park, Sang-in Lee, Cheol-seong Hwang, Doo-sup Hwang, Hag-Ju Cho

Method for forming a platinum group metal layer for a capacitor

À¯·´, EP0872880 A2, 1998. 10. 21.

10

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Method for forming lower electrode of capacitor

¹Ì±¹, 05824563, 1998. 10. 20.

9

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°­À¯Àü¼º·¥ ijÆнÃÅÍÀÇ Á¦Á¶¹æ¹ý

´ëÇѹα¹, 10-0282459, 1998. 10. 13.

8

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°íÀ¯ÀüÀ² Àç·á¸¦ ÀÌ¿ëÇÑ Ä¿ÆнÃÅÍ ¹× ±× Á¦Á¶ ¹æ¹ý

´ëÇѹα¹, 10-0168346, 1998. 10. 01.

7

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´Ù¸¶½Å °øÁ¤À» ÀÌ¿ëÇÑ Ä¿ÆнÃÅÍ Á¦Á¶ ¹æ¹ý Çѱ¹

´ëÇѹα¹, 10-0168339, 1998. 10. 01.

6

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¹ÝµµÃ¼ ÀåÄ¡ÀÇ Ä¿ÆнÃÅÍ Çü¼º ¹æ¹ý

´ëÇѹα¹ ƯÇã(°ø°³), 1998-40645, 1998. 08. 17.

5

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¹ÝµµÃ¼ ÀåÄ¡ÀÇ Ä¿ÆнÃÅÍ ¹× ±× Á¦Á¶¹æ¹ý

´ëÇѹα¹ ƯÇã(°ø°³), 1998-26823, 1998. 07. 15.

4

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¹ÝµµÃ¼ ÀåÄ¡ÀÇ Ä¿ÆнÃÅÍ ¹× ±× Á¦Á¶ ¹æ¹ý

´ëÇѹα¹, 10-0147640, 1998. 05. 18.