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자료 |
| 2019 |
Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha, Jeong Woo Jeon, Yoon Kyeung Lee*, and Cheol Seong Hwang*
Developing Precursor Chemistry for Atomic Layer Deposition of High Density, Conformal GeTe Films for Phase Change Memory
Chemistry of Materials, 31, 8663-8672 (2019)
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| 2019 |
Yoon Kyeung Lee, Jeong Woo Jeon, Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha, and Cheol Seong Hwang
Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals
Micromachines, 10, 306 (2019)
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| 2018 |
Kyung Seok Woo, Yongmin Wang, Jihun Kim, Yumin Kim, Young Jae Kwon, Jung Ho Yoon, Woohyun Kim, and Cheol Seong Hwang
A True Random Number Generator Using Threshold-Switching-Based Memristors in an Efficient Circuit Design
Advanced Electronic Materials, DOI: 10.1002/aelm.201800543 (2018)
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| 2018 |
Woohyun Kim, Sijung Yoo, Chanyoung Yoo, Eui-Sang Park, Jeongwoo Jeon, Young Jae Kwon, Kyung Seok Woo, Han Joon Kim, Yoon Kyeung Lee* and Cheol Seong Hwang*
Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch
Nanotechnology, 29, 365202 (2018)
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| 2018 |
Sijung Yoo†, Chanyoung Yoo†, Eui-Sang Park, Woohyun Kim, Yoon Kyeung Lee* and Cheol Seong Hwang*
Chemical Interactions in Atomic Layer Deposition of Ge-Sb-Se-Te Films and Their Ovonic Threshold Switching Behavior
J. Mater. Chem. C., 6, 5025-5032 (2018)
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