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2021 |
Yoon Ho Jang, Woohyun Kim, Jihun Kim, Kyung Seok Woo, Hyun Jae Lee, Jeong Woo Jeon, Sung Keun Shim, Janguk Han, and Cheol Seong Hwang*
Time-varying data processing with nonvolatile memristor-based temporal kernel
Nature Communications, 12, 5727 (2021)
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2021 |
Kyung Seok Woo, Jaehyun Kim, Janguk Han, Jin Myung Choi, Woohyun Kim, and Cheol Seong Hwang*
A High-Speed True Random Number Generator Based on a CuxTe1-x Diffusive Memristor
Advanced Intelligent Systems, 2100062 (2021)
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2021 |
Hyun Jae Lee, Taehwan Moon, Sukin Kang, Woohyun Kim, and Cheol Seong Hwang*
Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films
ACS Applied Electronic Materials, Article ASAP,
DOI: 10.1021/acsaelm.1c00410
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2021 |
Yoon Kyeung Lee, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon and Cheol Seong Hwang*
Atomic layer deposition of chalcogenides for next-generation phase change memory
J. Mater. Chem. C, 9, 3708 - 3725 (2021)
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2020 |
Yoon Kyeung Lee*, Eui-Sang Park*, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Manick Ha, and Cheol Seong Hwang
Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Co-injection
CRYSTAL GROWTH & DESIGN, DOI: 10.1021/acs.cgd.0c00457 (2020)
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2020 |
Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Eui-Sang Park, Manick Ha, Yoon Kyeung Lee*, and Cheol Seong Hwang*
Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage
ACS Appl. Mater. Interface (2020) DOI: 10.1021/acsami.0c03747
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2020 |
Kyung Seok Woo, Yongmin Wang, Yumin Kim, Jihun Kim, Woohyun Kim, and Cheol Seong Hwang
A Combination of a Volatile-Memristor-Based True Random-Number Generator and a Nonlinear-Feedback Shift Register for High-Speed Encryption
Adv. Electron. Mater, 2020, 1901117, DOI:10.1002/aelm.201901117
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2019 |
Gil Seop Kim¢Ó, Hanchan Song¢Ó, Yoon Kyeung Lee, Ji Hun Kim, Woohyun Kim, Tea Hyung Park, Hae Jin Kim, Kyung Min Kim* and Cheol Seong Hwang*
Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network
ACS Appl. Mater. Interfaces, DOI: 10.1021/acsami.9b16499
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2019 |
Woohyun Kim, Chanyoung Yoo, Eui-Sang Park, Manick Ha, Jeong Woo Jeon, Gil Seop Kim, Kyung Seok Woo, Yoon Kyeung Lee*, and Cheol Seong Hwang*
Electroforming-free Bipolar Resistive Switching in GeSe Thin Films with a Ti-containing Electrode
ACS Appl. Mater. Interfaces, 11, 42, 38910-38920 (2019)
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2019 |
Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha, Jeong Woo Jeon, Taeyoung Eom, Yoon Kyeung Lee*, and Cheol Seong Hwang*
Atomic Layer Deposition of Nanocrystalline-as-Deposited (GeTe)x(Sb2Te3)1-x Films for Endurable Phase Change Memory
Chemistry of Materials, 31, 8752-8763 (2019)
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