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Hsu, C.-H., Lin, J.-S., He, Y.-D., Yang, S.-F., Yang, P.-C., Chen, W.-S.
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Hsu, C.-H., Yang, P.-C., Yang, H.-W., Yan, S.-F., Tung, H.-H.
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Microwave properties of epitaxial (111)-oriented Ba0.6Sr0.4TiO3 thin films on Al2O3(0001) up to 40 GHz
APPLIED PHYSICS LETTERS 97 16 OCT 18 2010

Li BW, Osada M, Ozawa TC, et al.
A-Site-Modified Perovskite Nanosheets and Their Integration into High-kappa Dielectric Thin Films with a Clean Interface
JAPANESE JOURNAL OF APPLIED PHYSICS 49 9 Part 2 Sp. Iss. SI Part 2 Sp. Iss. SI 2010

Osada M, Akatsuka K, Ebina Y, et al.
Robust High-kappa Response in Molecularly Thin Perovskite Nanosheets
ACS NANO Volume: 4 Issue: 9 Pages: 5225-5232 Published: SEP 2010

Park TJ, Kim JH, Jang JH, et al.
Optimized Electrical Properties and Chemical Structures of SrTiO3 Thin Films on Si Using Various Interfacial Barrier Layers
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157 (10), G216-G220 , 2010

Hsu CH, Chung CY
Physical and dielectric properties of sol-gel derived ZnO-doped Zr0.8Sn0.2TiO4 dielectric thin films
JOURNAL OF ALLOYS AND COMPOUNDS 491 1-2 483-486 FEB 18 2010

Kittl JA, Opsomer K, Popovici M, et al.
High-k Dielectrics and Metal Gates for Future Generation Memory Devices
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT 19 1 29-40 2009

Kawae T, Fukuda Y, Morito K, et al.
Hysteresis Behavior of Capacitance-Voltage Curve in (Ba0.6Sr0.4)TiO3 Thick Films Caused by Strained Heterostructure
JAPANESE JOURNAL OF APPLIED PHYSICS 48 9 Part 2 Sp. Iss. SI Part 2 Sp. Iss. SI SEP 2009

Li BW, Osada M, Ozawa TC, et al.
Solution-Based Fabrication of Perovskite Nanosheet Films and Their Dielectric Properties
JAPANESE JOURNAL OF APPLIED PHYSICS 48 9 Part 2 Sp. Iss. SI Part 2 Sp. Iss. SI SEP 2009

Lee SW, Han JH, Hwang CS
Electronic Conduction Mechanism of SrTiO3 Thin Film Grown on Ru Electrode by Atomic Layer Deposition
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 12 Issue: 11 Pages: G69-G71 Published: 2009

Park TJ, Kim JH, Jang JH, et al.
Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 (9) G129-G133 2009

Kittl JA, Opsomer K, Popovici M, et al.
High-k dielectrics for future generation memory devices (Invited Paper)
MICROELECTRONIC ENGINEERING 86 (7-9) 1789-1795 2009

Hsu CH
Influence of annealing treatments for ZnO-doped Zr0.8Sn0.2TiO4 thin films by RF magnetron sputtering
THIN SOLID FILMS 517 (17) 5061-5065 JUL 2009

Akatsuka K, Haga M, Ebina Y, et al.
Construction of Highly Ordered Lamellar Nanostructures through Langmuir-Blodgett Deposition of Molecularly Thin Titania Nanosheets Tens of Micrometers Wide and Their Excellent Dielectric Properties
ACS NANO 3 (5) 1097-1106 MAY 2009

Chen CY, Chou JC, Chou HT
pH Sensing of Ba0.7Sr0.3TiO3/SiO2 Film for Metal-Oxide-Semiconductor and Ion-Sensitive Field-Effect Transistor Devices
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 (6) G59-G64 2009

Shen H, Gao YH, Zhou P, et al.
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3/Si substrates
JOURNAL OF APPLIED PHYSICS 105 (6) 061637 MAR 2009

Huang CL, Chen JY
The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering
JOURNAL OF CRYSTAL GROWTH 311 (3) 627-633 JAN 2009

Kamehara N, Kurihara K
Effect of Rare Earth Elements Doping on the Electrical Properties of (Ba,Sr)TiO3 Thin Film Capacitors
IEEE 9TH VLSI PACKAGING WORKSHOP IN JAPAN Pages: 113-116 Published: 2008

Oh S, Park JH, Akedo J
Dielectric Characteristics of Barium Strontium Titanate Films Prepared by Aerosol Deposition on a Cu Substrate
TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 56 (3) 421-424 MAR 2009

Wang DY, Yun P, Wang Y, et al.
Influence of oxygen partial pressure on the structural and dielectric properties of Ba(Zr0.3Ti0.7)O-3 thin films grown on (LaAlO3)(0.3)(Sr2AlTaO6)(0.35) (001) using pulsed laser deposition
THIN SOLID FILMS 517 (6) 2092-2098 JAN 2009

Weiss CV, Cole MW, Alpay SP, et al.
DIELECTRIC RESPONSE OF VARIABLE THICKNESS Ba0.6Sr0.4TiO3 FILMS FOR PROPERTY-SPECIFIC DEVICE APPLICATIONS
INTEGRATED FERROELECTRICS 100 36-47 2008

Popovici D, Tsuda H, Akedo J
Fabrication of (Ba-0.6,Sr-0.4)TiO3 thick films by aerosol deposition method for application to embedded multilayered capacitor structures
JAPANESE JOURNAL OF APPLIED PHYSICS 47 (9) 7490-7493 Part 2 2008

Ramani K, Singh RK, Craciun V
Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films
MICROELECTRONIC ENGINEERING 85 (8) 1758-1761 2008

Kim SK, Choi GJ, Lee SY, et al.
Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors
ADVANCED MATERIALS 20 (8) 1429 2008

Wang YX
First-principles study of the (001) surface of cubic Ba0.5Sr0.5TiO3
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 245 (6) 1147-1151 2008

Gao, Y.H., Sun, J.L., Ma, J.H., Meng, X.J., Chu, J.H.
Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material
Applied Physics A: Materials Science and Processing 91 (3), pp. 541-544 2008

Gao, Y.H., Ma, J.H., Li, T.X., Sun, J.L., Meng, X.J., Chu, J.H.
Improved dielectric and electrical behaviour of low-temperature deposited (Ba0.6Sr0.4)TiO3 films by thin SrTiO 3 buffer layer
Journal of Physics D: Applied Physics 41 (8), art. no. 085305 2008

Jha, G.C., Ray, S.K., Manna, I.
Effect of deposition temperature on the microstructure and electrical properties of Ba0.8Sr0.2TiO3 thin films deposited by radio-frequency magnetron sputtering
Thin Solid Films 516 (10), pp. 3416-3421 2008

Park, W.Y., Hwang, C.S., Baniecki, J.D., Ishii, M., Kurihara, K., Yamanaka, K.
Unusual thickness dependence of permittivity and elastic strain in Sc modified epitaxial (Ba,Sr) TiO3 thin films
Applied Physics Letters 92 (10), art. no. 102902 2008

Chen W, Yao X, Wei XY
Structural and dielectric properties of Bi doped Ba0.6Sr0.4TiO3 ceramics
JOURNAL OF MATERIALS SCIENCE Volume: 43 Issue: 3 Pages: 1144-1150 Published: FEB 2008

Quan Z, Zhang BS, Zhang TJ, et al.
Interfacial characteristics and dielectric properties of Ba0.65Sr0.35TiO3 thin films
Source: THIN SOLID FILMS Volume: 516 Issue: 6 Pages: 999-1005 Published: JAN 30 2008

Oh SW, Park JH, Akedo J
Dielectric characterization of barium strontium titanate (BST) films prepared on cu substrate by aerosol deposited method
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 Book Series: IEEE International Symposium on Applications of Ferroelectrics Pages: 207-208 Published: 2007

Yun P, Wang DY, Wang Y, et al.
In-plane dielectric characterization of epitaxial Ba(Zr0.35Ti0.65)O-3 thin films grown on LSAT(001)
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 Book Series: IEEE International Symposium on Applications of Ferroelectrics Pages: 222-225 Published: 2007

P. Yun ; D. Y. Wang ; Z. Ying ; Z. T. Song ; S. L. Feng ; Y. Wang ; H. L. W. Chan
IN-PLANE DIELECTRIC PROPERTIES OF EPITAXIAL Ba(Zr0.3Ti0.7)O3 THIN FILM GROWN ON LSAT (001) SINGLE CRYSTAL SUBSTRATE
Integrated Ferroelectrics, 93: 154–160, 2007

孙华, , ڸ亚, 赵兴
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ELECTRONlC COMPONENTS AND MATERIALS 2007

A Tabyaoui, M Saber, K Barner3 and A Ainane1
Critical properties of a ferroelectrics superlattice described by a transverse spin-1/2 Ising model
Physica Scripta 2007

Tabyaoui, A, Saber M , Barner K, Ainane A
Growth and characterization of nitrogen-doped single-walled carbon nanotubes by water-plasma chemical vapour deposition
PHYSICA SCRIPTA 2007

Koo HS, Chen M, Ku HK , Kawai T
Electrical characteristics and preparation of (Ba0.5Sr0.5)TiO3 films by spray pyrolysis and rapid thermal annealing
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 2007

Jeong SW, Roh Y
Effects of annealing temperature on the characteristics of HfSixOy-HfO2 films deposited for metal-insulator-metal capacitors by using atomic layer deposition
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 2007

Gao YH, Shen H, Ma JH, et al.
Surface chemical composition and optical properties of nitrogen-doped Ba0.6Sr0.4TiO3 thin films
JOURNAL OF APPLIED PHYSICS 2007

Qiu JH, Jiang Q
Film thickness dependence of electro-optic effects in epitaxial Ba0.7Sr0.3TiO3 thin films
JOURNAL OF APPLIED PHYSICS 2007

Yun P, Wang DY, Ying Z, et al.
Dielectric properties of (001)-oriented Ba(Zr0.25Ti0.75)O-3 thin films prepared by pulsed laser deposition
FERROELECTRICS 2007

Gurbuz Y, Kang WP, Davidson JL, et al.
Electron emission characteristics of sol-gel (Ba0.67Sr0.33)TiO3 thin film coated silicon tips
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2007

Osada M, Akatsuka K, Ebina Y, et al.
Solution-based fabrication of high-kappa dielectric nanofilms using titania nanosheets as a building block
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 2007

Kwon, O.S., Lee, S.W., Han, J.H., Hwang, C.S.
Atomic layer deposition and electrical properties of SrTi O3 thin films grown using Sr (C11 H19 O2) 2, Ti (Oi- C3 H7) 4, and H2 O
Journal of the Electrochemical Society 154 (6), pp. 127-133 2007

Kim J, Pak J, Nam K, et al.
Calculation of the intrinsic dead layers thicknesses from Au/Ba0.5Sr0.5TiO3/Pt thin film capacitors
JOURNAL OF ELECTROCERAMICS 16 (4): 495-498 JUL 2006

Tsai KC, Wu WF, Chao CG, et al.
Repairing of etching-induced damage of high-k Ba0.5Sr0.5TiO3 thin films by oxygen surface plasma treatment
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 (6B): 5490-5494 JUN 2006

Tsai KC, Wu WF, Chao CG, et al.
Improving electrical properties and thermal stability of (Ba,Sr)TiO3 thin films on Cu(Mg) bottom electrodes
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 (6B): 5495-5500 JUN 2006

Liao JX, Yang CR, Zhang JH, et al.
The interfacial structures of (Ba, Sr)TiO3 films deposited by radio frequency magnetron sputtering
APPLIED SURFACE SCIENCE 252 (20): 7407-7414 AUG 15 2006

Jeong S, Kim D, Lee S, et al.
Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors
APPLIED PHYSICS LETTERS 89 (9): Art. No. 092101 AUG 28 2006

Zeng YK, Zhang HB, Jiang SL, et al.
Fabrication and characteristics of Pb doped BST ferroelectric thin films for uncooled infrared focal plane arrays
INTEGRATED FERROELECTRICS 82: 91-99 2006

Chiou YK, Wu TB
Characteristic of (100)-textured (PbxSr1-x)TiO3 thin films used for DRAM and tunable device application
INTEGRATED FERROELECTRICS 80: 395-405 2006

Kim JK, Kim SS, Kim WJ, et al.
Structural and electrical properties of (BaxSr1-x)TiO3 thin films prepared by a sol-gel method
INTEGRATED FERROELECTRICS 80: 423-428 2006

Liao JX, Yang CR, Tian Z, et al.
The influence of post-annealing on the chemical structures and dielectric properties of the surface layer of Ba0.6Sr0.4TiO3 films
JOURNAL OF PHYSICS D-APPLIED PHYSICS 39 (11): 2473-2479 JUN 7 2006

Du J, Choy KL
Fabrication and structural characterization of (Ba,Sr)TiO3 thin films produced by Electrostatic Spray Assisted Vapour Deposition
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS 26 (5-7): 1117-1121 Sp. Iss. SI JUL 2006

Sun XH, Zhu BL, Liu T, et al.
Dielectric and tunable properties of K-doped Ba0.6Sr0.4TiO3 thin films fabricated by sol-gel method
JOURNAL OF APPLIED PHYSICS 99 (8): Art. No. 084103 APR 15 2006

Osada M, Ebina Y, Funakubo H, et al.
High-k dielectric nanofilms fabricated from Titania nanosheets
ADVANCED MATERIALS 18 (8): 1023+ APR 18 2006

Htoutou K, Ainane A, Saber M, et al.
The magnetizations and the susceptibilities in ferroelectric films described by a transverse spin-1/2 Ising model
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 67 (1-3): 182-185 JAN-MAR 2006

Battiston GA, Gerbasi R, Carta G, et al.
Innovative second-generation Ba and Sr precursors for chemical vapor deposition of Ba1-xSrxTiO3 thin films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (3): F35-F38 2006

Hwang GW, Kim WD, Min YS, et al.
Characteristics of amorphous Bi2Ti2O7 thin films grown by atomic layer deposition for memory capacitor applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (1): F20-F26 2006

Liu CH, Wu JM
Improvement of electrical properties and reliability of (Ba0.5Sr0.5)TiO3 thin films on Si substrates by N2O prenitridation
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (2): G23-G26 2006

Wakiya N, Higuchi A, Ryouken H, et al.
Diffusion behavior at the interface of (Ba,Sr)TiO3(BST)/electrode/buffer layer/Si epitaxial multi-layer thin film
KEY ENGINEERING MATERIALS 301: 257-260 2005

Jeong DS, Hwang CS, Baniecki JD, et al.
Dielectric constant dispersion of yttrium-doped (Ba,Sr)TiO3 films in the high-frequency (10 kHz-67 GHz) domain
APPLIED PHYSICS LETTERS 87 (23): Art. No. 232903 DEC 5 2005

Li XL, Chen B, Jing HY, et al.
Experimental evidence of the "dead layer" at Pt/BaTiO3 interface
APPLIED PHYSICS LETTERS 87 (22): Art. No. 222905 NOV 28 2005

Kim J, Pak J, Nam K, et al.
Ferroelectric (Ba,Sr)TiO3 thin films on Pt/Ti/SiO2/Si substrates by the sol-gel process and evaluation of the intrinsic dead layers
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 47: S349-S352 Suppl. 2 SEP 2005

Shim D, Pak J, Nam K, et al.
Effects of heat-treatment conditions on electrical properties of sol-gel-derived ferroelectric Pb(Zr,Ti)O-3 thin films
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 47: S364-S367 Suppl. 2 SEP 2005

Jiang Q, Gao YH
Nonlinear dielectric response of epitaxial Ba0.6Sr0.4TiO3 thin films
EUROPEAN PHYSICAL JOURNAL B 46 (2): 193-199 JUL 2005

Chiu MC, Wang CC, Yao HC, et al.
Microstructure and electrical properties of Ba1-xSrxTiO3 thin films prepared by rf magnetron sputtering
MATERIALS CHEMISTRY AND PHYSICS 94 (1): 141-147 NOV 15 2005

Wu CH, Chu JP, Wang SF
Microstructure and electrical properties of Ho-doped BaTiO3-sputtered films
JOURNAL OF APPLIED PHYSICS 98 (2): Art. No. 026109 JUL 15 2005

Kim WD, Hwang GW, Kwon OS, et al.
Growth characteristics of atomic layer deposited TiO2 thin films on Ru and Si electrodes for memory capacitor applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (8): C552-C559 2005

Li JT, Dong XL
Simulation of space-charge effects on the leakage currents in (Ba, Sr)TiO3 thin films
PHYSICS LETTERS A 340 (1-4): 303-308 JUN 6 2005

Chiu MC, Cheng CF, Wu WT, et al.
Effect of crystallinity on the dielectric properties of Ba0.5Sr0.5TiO3 thin films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (6): F66-F70 2005

Zhang RB, Yang CS, Ding GP
The effects of oxygen partial pressure on BST thin films deposited on multilayered bottom electrodes
MATERIALS LETTERS 59 (14-15): 1741-1744 JUN 2005

Dixit A, Majumder SB, Katiyar RS, et al.
Effect of Zr substitution for Ti on the dielectric and ferroelectric properties of barium titanate thin films
INTEGRATED FERROELECTRICS 70: 45-59 2005

Bae BJ, Lee K, Seo WS, et al.
Preparation of anatase TiO2 thin films with ((OPr)-Pr-i)(2)Ti(CH3COCHCONEt2)(2) precursor by MOCVD
BULLETIN OF THE KOREAN CHEMICAL SOCIETY 25 (11): 1661-1666 NOV 20 2004

Park WY, Hwang CS
Film-thickness-dependent Curie-Weiss behavior of (Ba,Sr)TiO3 thin-film capacitors having Pt electrodes
APPLIED PHYSICS LETTERS 85 (22): 5313-5315 NOV 29 2004

Miao J, Chen WR, Zhao L, et al.
Enhanced dielectric properties of Ba1-xSrxTiO3 thin film grown on La1-xSrxMnO3 bottom layer
JOURNAL OF APPLIED PHYSICS 96 (11): 6578-6584 DEC 1 2004

Yang H, Miao J, Chen B, et al.
Abnormal temperature dependence of dielectric constant in (Ba0.7Sr0.3)TiO3 thin films
APPLIED PHYSICS LETTERS 85 (18): 4106-4108 NOV 1 2004

Kim SK, Kim WD, Kim KM, et al.
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 degrees C by atomic-layer deposition
APPLIED PHYSICS LETTERS 85 (18): 4112-4114 NOV 1 2004

Huang CL, Hsu CH
Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films
JOURNAL OF APPLIED PHYSICS 96 (2): 1186-1191 JUL 15 2004

Kim GH, Kim KT, Kim DP, et al.
Etching mechanism of (Pb,Sr)TiO3 thin films for DRAM application using Cl-2/Ar inductively coupled plasma
VACUUM 74 (3-4): 485-489 JUN 7 2004

Lee JS, Li Y, Lin Y, et al.
Hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr)TiO3 thin films
APPL PHYS LETT 84 (19): 3825-3827 MAY 10 2004

Lee JS, Hong SH, Woo KJ, et al.
Efficient incorporation of the ti component with a novel titanium diolate complex in the CVD of Ba(1-x)SrxTiO(3) thin films
CHEM VAPOR DEPOS 10 (2): 67-+ MAR 2004

Lim S, Choi B, Min YS, et al.
A study on the development of CVD precursors V - syntheses and characterization of new N-alkoxy-beta-ketoiminate complexes of titanium
J ORGANOMET CHEM 689 (1): 224-237 JAN 5 2004

Jeong DS, Ahn KH, Park WY, et al.
Positive temperature coefficient of resistivity in paraelectric (Ba,Sr)TiO3 thin films
APPL PHYS LETT 84 (1): 94-96 JAN 5 2004

Pettinari C, Marchetti F, Pettinari R, et al.
From mono- to poly-nuclear heteroleptic alkaline earth-titanium complexes containing 2,2,6,6-tetramethylheptane-3,5-dionate (thd) and pyrazole (Hpz) or 3,5-dimethylpyrazole (Hpz*) ligands. Synthesis, spectroscopic and structural characterization of [Ba(thd)(2)(HPZ)(2)](2), . . .
INORG CHIM ACTA 355: 157-167 NOV 20 2003

Park WY, Ahn KH, Hwang CS
Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering
APPL PHYS LETT 83 (21): 4387-4389 NOV 24 2003

Fan W, Kabius B, Hiller JM, et al.
Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes
J APPL PHYS 94 (9): 6192-6200 NOV 1 2003

Tao K, Hao Z, Xu B, et al.
Ferroelectric properties of (Ba,Sr)TiO3 thin films grown on YBa2CU3O7 layers
J APPL PHYS 94 (6): 4042-4046 SEP 15 2003

Kim HJ, Shin JC, Hwang CS, et al.
Deposition and characterization of high dielectric thin films for memory device application
SURF REV LETT 10 (4): 591-604 AUG 2003

Liebus S, Boulle A, Cosset F, et al.
Microstructural and microwave characterizations of pulsed laser ablated barium and strontium titanate thin films
FERROELECTRICS 288: 49-57 2003

Qin YL, Jia CL, Liedtke R, et al.
Transmission electron microscopy investigation of Pt/Ba0.7Sr0.3TiO3/Pt capacitors with different annealing processes
J AM CERAM SOC 86 (7): 1190-1195 JUL 2003

Kang WP, Wisitsora-at A, Davidson JL, et al.
Effect of annealing temperature on the electron emission characteristics of silicon tips coated with Ba0.67Sr0.33TiO3 thin film
J VAC SCI TECHNOL B 21 (1): 453-457 JAN-FEB 2003

Lee SY, Kim H, McIntyre PC, et al.
Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application
APPL PHYS LETT 82 (17): 2874-2876 APR 28 2003

Goux L, Gervais M, Gervais F, et al.
Characterization of pulsed laser deposited Ba0.6Sr0.4TiO3 on Pt-coated silicon substrates
MAT SCI SEMICON PROC 5 (2-3): 189-194 APR-JUN 2002

Yoon DS, Roh JS, Baik HK, et al.
Future direction for a diffusion barrier in future high-density volatile and nonvolatile memory devices
CRIT REV SOLID STATE 27 (3-4): 143-226 2002

Zhu XH, Chan HLW, Choy CL, et al.
Microstructural and morphological evolutions in compositionally-graded (Ba1-xSrx)TiO3 thin films and related dielectric properties
INTEGR FERROELECTR 45: 131-140 2002

Xie YH, Lin YY, Tang TA
Characteristics of BST thin film prepared by novel chemical solution deposition method for high-density DRAM application
INTEGR FERROELECTR 47: 113-124 2002

Dobal PS, Dixit A, Katiyar RS, et al.
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FERROELECTRICS LETT 29 (3-4): 1-10 2002

Zhu X, Chan HLW, Choy CL, et al.
Epitaxial growth and dielectric properties of functionally graded (Ba1-xSrx)TiO3 thin films with stoichimetric variation
J VAC SCI TECHNOL A 20 (5): 1796-1801 SEP-OCT 2002

Cho SL, Kim BS, Kim HM, et al.
Metallorganic chemical vapor deposition of TaOxNy as a high-dielectric-constant material for next-generation devices
J ELECTROCHEM SOC 149 (10): C529-C537 OCT 2002

Ahn KH, Baik S, Kim SS
Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping
J APPL PHYS 92 (5): 2651-2654 SEP 1 2002

Tabyaoui A, Ainane A, Saber M
Magnetic properties in ferroelectric superlattices described by a transverse spin-1/2 Ising model
PHYSICA A 311 (3-4): 475-488 AUG 15 2002

Song J, Kim HR, Park J, et al.
Oxidation behavior of TiAlN barrier layers with and without thin metal overlayers for memory capacitor applications
J MATER RES 17 (7): 1789-1794 JUL 2002

Hwang CS
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J APPL PHYS 92 (1): 432-437 JUL 1 2002

Hong SH, Rim SK, Lee IM, et al.
Decomposition behaviors of bis(N-alkoxy-p-ketoiminate) titanium complexes in the depositions of titanium oxide and barium strontium titanate films
THIN SOLID FILMS 409 (1): 82-87 APR 22 2002

Xing S, Song ZT, Lin CL
Optimized deposition of PLD-derived Ba0.8Sr0.2TiO3 thin film capacitor
MATER LETT 54 (5-6): 447-451 JUN 2002

Goux L, Gervais M, Catherinot A, et al.
Crystalline and electrical properties of pulsed laser deposited BST on platinized silicon substrates
J NON-CRYST SOLIDS 303 (1): 194-200 MAY 1 2002

Qin YL, Jia CL, Urban K, et al.
Structural and morphologic evolution of Pt/Ba0.7Sr0.3TiO3/Pt capacitors with annealing processes
APPL PHYS LETT 80 (15): 2728-2730 APR 15 2002

Lee SY, Tseng TY
Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate
APPL PHYS LETT 80 (10): 1797-1799 MAR 11 2002

Liebus S, Girault-Di Bin C, Cosset F, et al.
Pulsed laser deposited barium strontium titanate thin films: Cristallographic and dielectric characterizations
J PHYS IV 11 (PR11): 193-197 DEC 2001

Bachhofer H, Reisinger H, Steinlesberger G, et al.
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INTEGR FERROELECTR 39 (1-4): 1139-1148 2001

Tsuzumitani A, Okuno Y, Yamanaka M, et al.
Stabilization of ultra-thin Pt bottom electrode for 0.15 mu m cup-type BST capacitor
INTEGR FERROELECTR 38 (1-4): 883-891 2001

Min YS, Cho YJ, Kim D, et al.
Influence of thermal decomposition behavior of titanium precursors on (Ba,Sr)TiO3 thin films
J PHYS IV 11 (PR3): 675-682 AUG 2001

Li T, Hsu ST
The development of MOCVD techniques for ferroelectric and dielectric thin film depositions
J PHYS IV 11 (PR3): 1139-1145 AUG 2001

Park SY, Choi J, No K
Effects of Sr/Ti ratio on the step coverage of SrTiO3 thin films fabricated using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition
JPN J APPL PHYS 1 40 (4A): 2456-2459 APR 2001

Dey SK, Majhi P, Shin YW, et al.
Sub-300 angstrom (Ba-x,Sr1-x)TiO3 films by metal organic chemical vapor deposition: Nanostructure, step coverage, and dielectric properties
JPN J APPL PHYS 1 40 (5A): 3354-3358 MAY 2001

Min YS, Cho YJ, Kim D, et al.
Liquid source-MOCVD of BaxSr1-xTiO3 (BST) thin films with a N-alkoxy-beta-ketoiminato titanium complex
CHEM VAPOR DEPOS 7 (4): 146-+ JUL 2001

Majumder SB, Jain M, Martinez A, et al.
Sol-gel derived grain oriented barium strontium titanate thin films for phase shifter applications
J APPL PHYS 90 (2): 896-903 JUL 15 2001

Park J, Hwang CS, Yang DY
Optimization of the annealing process for the (Ba,Sr)TiO3 thin films grown by low-temperature (420 degrees C) metalorganic chemical vapor deposition
J MATER RES 16 (5): 1363-1371 MAY 2001

Yoo DC, Lee JY
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Chung HJ, Kim JH, Woo SI
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Scott JF
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APPLIED PHYSICS LETTERS 96 8 FEB 22 2010

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Zhang, T.J., Li, S.Z., Zhang, B.S., Pan, R.K., Huang, W.H., Jiang, J.
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Zhu, W., Cheng, J., Yu, S., Gong, J., Meng, Z.
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Applied Physics Letters 90 (3), art. no. 032907 2007

Li, J., Yu, J., Wang, Y., Guo, D., Wang, L., Gao, J.
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Hara, T., Nishikawa, H., Konushi, S., Fukumaru, F., Nambu, S.
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Liao, J.X., Yang, C.R., Chen, H.W., Fu, C.L., Leng, W.J., Zhao, L., Gao, Z.Q.
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Surface Engineering in Materials Science III - Proceedings of a Symposium sponsored by the Surface Engineering Committee of the(MPMD) of the Minerals, Metals and Materials Society, TMS, pp. 317-323 2005

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Materials Research Society Symposium Proceedings 811, pp. 117-122 2004

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Doktorsavhandlingar vid Chalmers Tekniska Hogskola (2139) 2004

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Masuda Y, Nozaka T
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MOCVD of Platinum Films from (CH3)3CH 3CpPt and Pt(acac)2: Nanostructure, Conformality, and Electrical Resistivity
Advanced Materials 15 (16), pp. 213-220 2003

Baniecki, J.D., Shioga, T., Kurihara, K.
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Saha, S., Kaufman, D.Y., Streiffer, S.K., Erck, R.A., Auciello, O.
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Materials Research Society Symposium - Proceedings 655, pp. XLIV-XLVI 2001

Yoo, C.Y., Park, H.B., Hwang, D.S., Hideki, H., Kim, W.D., Lim, H.J., Lee, B.T., Lee, M.Y.
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Yang, H., Suvorova, N.A., Jain, M., Kang, B.S., Li, Y., Hawley, M.E., Dowden, P.C., (...), Lu, C.J.
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Lee, C.-C., Wang, C.-C., Chen, S.-W., Lee, Y.-H., Liang, C.-S., Chou, F.-C., Wu, J.-M.
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Journal of the Electrochemical Society 158 (11), pp. G231-G235 2011

Seo, M., Ho Rha, S., Keun Kim, S., Hwan Han, J., Lee, W., Han, S., Seong Hwang, C.
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Li, S., Ghinea, C., Bayer, T.J.M., Motzko, M., Schafranek, R., Klein, A.
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Chen CY, Chou JC, Chou HT
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Qin, M., Yao, K., Liang, Y.C., Gan, B.K.
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Lu, X., Wu, C.-G., Zhang, W.-L., Li, Y.-R.
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Fu Z, Wu AY, Vilarinho PM
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Ehrhart P, Thomas R
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Li JT, Dong XL, Chen Y
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Li JT, Dong XL
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Cho YW, Choi SK, Rao GV
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Regnery S, Thomas R, Ehrhart P, et al.
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Meyer R, Liedtke R, Waser R
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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 4 (4): 670-675 DEC 2004

Jamil A, Kalkur TS, Cramer N
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Park WY, Hwang CS
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APPLIED PHYSICS LETTERS 85 (22): 5313-5315 NOV 29 2004

Cramer, N., Philofsky, E., Kammerdiner, L., Kalkur, T.S.
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Materials Research Society Symposium Proceedings 811, pp. 261-266 2004

Pervez NK, Hansen PJ, York RA
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Maity AK, Lee JYM, Sen A, et al.
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Shi P, Yao X, Zhang LY
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Liang YC, Wu TB, Lee HY, et al.
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Kim KT, Kim CI
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Schroeder H, Schmitz S
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ANN PHYS-BERLIN 13 (1-2): 90-92 JAN-FEB 2004

Cramer N, Philofsky E, Kammerdiner L, et al.
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Jeong DS, Ahn KH, Park WY, et al.
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Cramer N, Kalkur TS, Philofsky E, et al.
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Kalkur TS, Cotey C, Chen K, et al.
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INTEGR FERROELECTR 56: 1123-1129 2003

Halder, S., Schneller, T., Waser, R.
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Materials Research Society Symposium - Proceedings 784, pp. 387-391 2003

Cramer, N., Kalkur, T.S., Philofsky, E., Kammerdiner, L.
Leakage Current and Dielectric Properties of Ba0.5Sr 0.5TiO3 Films Deposited by RF Sputtering at Low Substrate Temperature
Materials Research Society Symposium - Proceedings 768, pp. 51-56 2003

Cramer, N., Philofsky, E., Kammerdiner, L., Kalkur, T.S.
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Materials Research Society Symposium - Proceedings 784, pp. 375-380 2003

Schroeder, H., Schmitz, S.
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Materials Research Society Symposium - Proceedings 748, pp. 423-428 2003

Schroeder, H., Schmitz, S., Meuffels, P.
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Symposium - Proceedings 748, pp. 199-204 2003

Schroeder H, Schmitz S
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Ahn KH, Kim SS, Baik S
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Schroeder H, Schmitz S, Meuffels P
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Han, I.-H., Lee, I.-S., Song, J.-H., Lee, M.-H., Park, J.-C., Lee, G.-H., Sun, X.-D., Chung, S.-M.
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Lee, I.-S., Zhao, B., Lee, G.-H., Choi, S.-H., Chung, S.-M.
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Taylor, K., Jodoin, B., Karov, J.
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Kim, H.-W., Yoon, B.-H., Koh, Y.-H., Kim, H.-E.
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Lee, I.-S., Whang, C.-N., Oh, K.-S., Park, J.-C., Lee, K.-Y., Lee, G.-H., Chung, S.-M., Sun, X.-D.
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Ni, J; Liu, RF; Xiao, XF
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RARE METAL MATERIALS AND ENGINEERING Volume: 35 Issue: 1 Pages: 119-122 Published: JAN 2006

Kim, H.-W., Kim, H.-E., Salih, V., Knowles, J.C.
Sol-gel-modified titanium with hydroxyapatite thin films and effect on osteoblast-like cell responses
Journal of Biomedical Materials Research - Part A 74 (3), pp. 294-305 2005

Rabiei, A., Thomas, B.
Processing and development of nano-scale HA coatings for biomedical application
Materials Research Society Symposium Proceedings 845, pp. 193-199 2005

Kim, H.-W., Kim, H.-E., Salih, V., Knowles, J.C.
Hydroxyapatite and titania sol-gel composite coatings on titanium for hard tissue implants; mechanical and in vitro biological performance
Journal of Biomedical Materials Research - Part B Applied Biomaterials 72 (1), pp. 1-8 2005

Park, Y.-S., Yi, K.-Y., Lee, I.-S., Han, C.-H., Jung, Y.-C.
The effects of ion beam-assisted deposition of hydroxyapatite on the grit-blasted surface of endosseous implants in rabbit tibiae
International Journal of Oral and Maxillofacial Implants 20 (1), pp. 31-38 2005

Kim, H.-W., Kim, H.-E., Knowles, J.C.
Hard-tissue-engineered zirconia porous scaffolds with hydroxyapatite sol-gel and slurry coatings
Journal of Biomedical Materials Research - Part B Applied Biomaterials 70 (2), pp. 270-277 2004

Kim, H.-W., Georgiou, G., Knowles, J.C., Koh, Y.-H., Kim, H.-E.
Calcium phosphates and glass composite coatings on zirconia for enhanced biocompatibility
Biomaterials 25 (18), pp. 4203-4213 2004

Li, S.J., Niinomi, M., Akahori, T., Kasuga, T., Yang, R., Hao, Y.L.
Fatigue characteristics of bioactive glass-ceramic-coated Ti-29Nb-13Ta-4.6Zr for biomedical application
Biomaterials 25 (17), pp. 3369-3378 2004

Kim, H.-W., Kong, Y.-M., Bae, C.-J., Noh, Y.-J., Kim, H.-E.
Sol-gel derived fluor-hydroxyapatite biocoatings on zirconia substrate
Biomaterials 25 (15), pp. 2919-2926 2004

Li, S.J., Yang, R., Niinomi, M., Hao, Y.L., Cui, Y.Y.
Formation and growth of calcium phosphate on the surface of oxidized Ti-29Nb-13Ta-4.6Zr alloy
Biomaterials 25 (13), pp. 2525-2532 2004

Liu, R.-F., Xiao, X.-F., Lin, L.-Y., Ni, J., Chen, G.-Y.
Study on the Bonding Strength and Thermal Stability of Electrodeposition HA/TiO2 Composite Coating
Chinese Journal of Inorganic Chemistry 20 (2), pp. 225-230 2004

Lee, I.-S., Park, J.-C., Lee, Y.-H.
Plasma processing of materials for medical applications
Surface and Coatings Technology 171 (1-3), pp. 252-256 2003

Lee, I.-S., Whang, C.-N., Lee, G.H., Cui, F.-Z., Ito, A.
Effects of ion beam assist on the formation of calcium phosphate film
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 206 (SUPP), pp. 522-526 2003

Lee, I.-S., Park, J.-C., Kim, S.-R., Seo, W.S., Cho, S.-B., Jung, Y.-C.
Variation in biological properties of thin calcium phosphate films formed by e-beam evaporation
Key Engineering Materials 240-242, pp. 291-294 2003

Kim DH, Kong YM, Lee SH, et al.
Composition and crystallization of hydroxyapatite coating layer formed by electron beam deposition
J AM CERAM SOC 86 (1): 186-188 JAN 2003

Lee IS, Buchanan RA, Lee YH
Charge injection properties of iridium films formed by ion beam assisted deposition
J MATER SCI LETT 21 (23): 1859-1861 DEC 1 2002

Kong YM, Kim DH, Kim HE, et al.
Hydroxyapatite-based composite for dental implants: an in vivo removal torque experiment
J BIOMED MATER RES 63 (6): 714-721 DEC 5 2002

Pham MT, Matz W, Grambole D, et al.
Solution deposition of hydroxyapatite on titanium pretreated with a sodium ion implantation
J BIOMED MATER RES 59 (4): 716-724 MAR 15 2002

Lee IS, Kim DH, Kim HE, et al.
Biological performance of calcium phosphate films formed on commercially pure Ti by electron-beam evaporation
BIOMATERIALS 23 (2): 609-615 JAN 2002

Jung, Y.-C., Han, C.-H., Lee, I.-S., Kim, H.-E.
Effects of Ion Beam-Assisted Deposition of Hydroxyapatite on the Osseointegration of Endosseous Implants in Rabbit Tibiae
International Journal of Oral and Maxillofacial Implants 16 (6), pp. 809-818 2001

Kim DH, Kwon SH, Hong SH, et al.
In vitro and in vivo studies on the thin and defect-free calcium phosphate films formed by electron-beam evaporation
KEY ENG MAT 192-1: 79-82 2000

Choi JM, Kim HE, Lee IS
Ion-beam-assisted deposition (IBAD) of hydroxyapatite coating layer on Ti-based metal substrate
BIOMATERIALS 21 (5): 469-473 MAR 2000

46. O.S.Kwon, C.S.Hwang and S.Hong, "Degradation behavior in the remnant polarization of SrBi2Ta2O9 thin films by hydrogen annealing and its recovery by postannealing", Appl. Phys. Lett., 75[4], p.558-560 (1999) -7 [23]

Wang, D.-S.
Impact of forming gas annealing on the dielectric properties of SrBi 2Ta 2O 9 thin films prepared by metalorganic decomposition
Journal of Applied Physics 112 (8) , art. no. 084104 2012

Yu, T., Wang, D.S., Wu, D., Li, A.D., Hu, A., Liu, Z.G., Ming, N.B.
Stability investigation of ferroelectric SrBi2Ta2O9 thin films annealed in forming gas
Acta Metallurgica Sinica (English Letters) 15 (1), pp. 58-60 2011

Wang DS, Yu T, Hu A, et al.
Effect of Forming Gas on Properties of SrBi2Ta2O9 Ferroelectric Thin Film and Powder
JOURNAL OF INORGANIC MATERIALS 24 (4) 737-740 2009

Cheng JB, Li AD, Shao QY, et al.
Synthesis and characterization of ferroelectric nanocrystal powders of SrBi2Ta2O9 by a polymerizable complex method
INTERNATIONAL JOURNAL OF MODERN PHYSICS B 19 (15-17): 2514-2519 Part 1 JUL 10 2005

Choi HS, Sung HJ, Seo SG, et al.
Hydrogen-induced degradation and passivation of ferroelectric SrBi2Ta2O9 thin films by Au top electrode
MATER SCI FORUM 449-4: 485-488 2004

Lan BC, Hsu JJ, Chen SY, et al.
Forming gas annealing on physical characteristics and electrical properties of Sr0.8Bi2Ta2O9/Al2O3/Si capacitors
J APPL PHYS 94 (3): 1877-1881 AUG 1 2003

Hartner W, Bosk P, Schindler G, et al.
SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient
APPL PHYS A-MATER 77 (3-4): 571-579 AUG 2003

Seo S, Kang BS, Yoon JG, et al.
High resistance against hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12 thin films
JPN J APPL PHYS 1 41 (12): 7433-7436 DEC 2002

Zhu W, Chen XF, Tan OK, et al.
Hydrogen-sensitive amorphous ferroelectric thin film capacitive devices
INTEGR FERROELECTR 44: 25-75 2002

Seo S, Yoon JG, Kim JD, et al.
Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12
APPL PHYS LETT 81 (10): 1857-1859 SEP 2 2002

Park CH
Microscopic properties of complex of hydrogen and Pb-vacancy in ABO(3)-type perovskite
FERROELECTRICS 268: 437-442 2002

Yu T, Wang DS, Wu D, et al.
Time effect on the ferroelectric properties of SrBi2Ta2O9 thin films in forming gas processing
SENSOR ACTUAT A-PHYS 99 (1-2): 68-70 APR 30 2002

Yu T, Wang DS, Wu D, et al.
Fatigue study of SrBi2Ta2O9 thin films processed in forming gas
SENSOR ACTUAT A-PHYS 99 (1-2): 213-215 APR 30 2002

Koo JM, Kim J, Lee EG
Effects of recovery annealing on reliability of SrBi2Ta2O9 based ferroelectric memory devices
J MATER SCI LETT 21 (8): 653-655 APR 15 2002

Barz R, Neumayer DA, Majhi P, et al.
Control of bismuth volatility in SBT by vanadium doping
INTEGR FERROELECTR 39 (1-4): 1011-1021 2001

Li AD, Ling HQ, Wu D, et al.
Effects of anneal atmosphere on the structural and ferroelectric properties of SrBi2Ta2O9 thin films
FERROELECTRICS 260 (1-4): 527-532 2001

Li AD, Yu T, Ling HQ, et al.
Impacts of postannealing ambient atmospheres on Pt/SrBi2.2Ta2O9/Pt capacitors
J MATER RES 16 (12): 3526-3535 DEC 2001

Wang DS, Yu T, Hu A, et al.
Impact of forming gas annealing on the fatigue characteristics of ferroelectric SrBi2Ta2O9 thin films
APPL PHYS LETT 79 (14): 2237-2239 OCT 1 2001

Li B, Koch F, Chu L
Band-gap states and ferroelectric restoration in strontium bismuth tantalate
APPL PHYS LETT 78 (8): 1107-1109 FEB 19 2001

Hong SK, Yoon YH, Baek YK, et al.
Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors
J MATER RES 15 (12): 2822-2829 DEC 2000

Hong SK, Suh CW, Lee CG, et al.
Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications
APPL PHYS LETT 77 (1): 76-78 JUL 3 2000

Park CH, Chadi DJ
Effect of interstitial hydrogen impurities on ferroelectric polarization in PbTiO3
PHYS REV LETT 84 (20): 4717-4720 MAY 15 2000

Hong SK, Hwang CS, Kwon OS, et al.
Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing
APPL PHYS LETT 76 (3): 324-326 JAN 17 2000

47. June-Ho Park, Young-Hag Koh, Hyoun-Ee Kim, Cheol Seong Hwang and Eul Son Kang, "Densification and mechanical properties of titanium diboride with silicon nitride as a sintering aid", J. Am. Ceram. Soc., 82[11], p.3037-3042 (1999) -11 [49]

Zhao, Guolong; Huang, Chuanzhen; Liu, Hanlian; et al.
Microstructure and mechanical properties of TiB2-SiC ceramic composites by Reactive Hot Pressing
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS 42, pp.36-41 JAN 2014

Demirskyi, D., Agrawal, D., Ragulya, A.
Tough ceramics by microwave sintering of nanocrystalline titanium diboride ceramics
Ceramics International, Volume 40, Issue 1 PART B, Pages 1303-1310, January 2014

Zhao, G.b, Huang, C.a , Liu, H.b, Zou, B.b, Zhu, H.b, Wang, J.b
Microstructure and mechanical properties of TiB2-SiC ceramic composites by Reactive Hot Pressing
International Journal of Refractory Metals and Hard Materials, Volume 42, Pages 36-41, 2014

Zhao, G.ab, Huang, C.ab , Liu, H.ab, Zou, B.ab, Zhu, H.ab, Wang, J.ab
A study on in-situ synthesis of TiB2-SiC ceramic composites by reactive hot pressing
Ceramics International, Volume 40, Issue 1 PART B, Pages 2305-2313, January 2014

Murthy, T.S.R.C., Sonber, J.K., Subramanian, C.,Hubli, R.C., Krishnamurthy, N., Suri, A.K.
Densification and oxidation behavior of a novel TiB2-MoSi 2-CrB2 composite
International Journal of Refractory Metals and Hard Materials 36 , pp. 243-253 2013

Yang, T., Huang, C., Liu, H., Zou, B., Zhu, H., Wang, J.
Effect of (Ni,Mo) and (W,Ti)C on the microstructure and mechanical properties of TiB 2 ceramic tool materials
Materials Science Forum 723 , pp. 233-237 2012

Grabis, J., Šteins, I., Rašmane, Dz.
Preparation of TiB2-TiN and TiN-B powders and their processing
Key Engineering Materials 527 , pp. 32-37 2012

Zheng, Liya; Li, Fangzhi; Zhou, Yanchun
Preparation, Microstructure, and Mechanical Properties of TiB2 Using Ti3AlC2 as a Sintering Aid
Journal of the American Ceramic Society 95 (6) , pp. 2028-2034, 2012

Rabiezadeh, A.; Ataie, A.; Hadian, A. M.
Sintering of Al2O3-TiB2 nano-composite derived from milling assisted sol-gel method
International Journal of Refractory Metals and Hard Materials 33 , pp. 58-64, 2012

Song, J., Huang, C., Zou, B., Liu, H., Liu, L., Wang, J.
Effects of sintering additives on microstructure and mechanical properties of TiB2-WC ceramic-metal composite tool materials
International Journal of Refractory Metals and Hard Materials 30 (1), pp. 91-95 2012

Zschippang, E., Klemm, H., Herrmann, M., Sempf, K., Guth, U., Michaelis, A.
Electrical resistivity of silicon nitride-silicon carbide based ternary composites
Journal of the European Ceramic Society 32 (1), pp. 157-165 2012

Zaripov, A.A., Ashurov, K.B.
Electrical discharge machining of nonconductive materials
Surface Engineering and Applied Electrochemistry 47 (3), pp. 197-200 2011

Cheloui, H., Zhang, Z., Shen, X., Wang, F., Lee, S.
Microstructure and mechanical properties of TiB-TiB2 ceramic matrix composites fabricated by spark plasma sintering
Materials Science and Engineering A 528 (10-11), pp. 3849-3853 2011

Kothari, K., Radhakrishnan, R., Wereley, N.M.
Characterization of rapidly consolidated titanium diboride
Journal of Engineering Materials and Technology, Transactions of the ASME 133 (2), art. no. 024501 2011

Jain, D., Reddy, K.M., Mukhopadhyay, A., Basu, B.
Achieving uniform microstructure and superior mechanical properties in ultrafine grained TiB2-TiSi2 composites using innovative multi stage spark plasma sintering
Materials Science and Engineering A 528 (1), pp. 200-207 2010

Murthy, T.S.R.Ch., Sonber, J.K., Subramanian, C., Fotedar, R.K., Kumar, S., Gonal, M.R., Suri, A.K
A new TiB2 + CrSi2 composite - Densification, characterization and oxidation studies
International Journal of Refractory Metals and Hard Materials 28 (4), pp. 529-540 2010

Jain D, Reddy KM, Mukhopadhyay A, et al.
Achieving uniform microstructure and superior mechanical properties in ultrafine grained TiB2-TiSi2 composites using innovative multi stage spark plasma sintering
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 528 1 200-207 NOV 25 2010

Yang ZL, Ouyang JH, Liu ZG, et al.
Wear mechanisms of TiN-TiB2 ceramic in sliding against alumina from room temperature to 700 degrees C
CERAMICS INTERNATIONAL 36 7 2129-2135 SEP 2010

Raju GB, Basu B
Wear Mechanisms of TiB2 and TiB2-TiSi2 at Fretting Contacts with Steel and WC-6 wt% Co
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY 7 1 89-103 2010

Murthy TSRC, Sonber JK, Subramanian C, et al.
Effect of CrB2 addition on densification, properties and oxidation resistance of TiB2
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS 27 6 976-984 NOV 2009

Raju GB, Basu B
Influence of MoSi2 Addition on Load-Dependent Fretting Wear Properties of TiB2 Against Cemented Carbide
JOURNAL OF THE AMERICAN CERAMIC SOCIETY 92 (9) 2059-2066 2009

Zhu T, Xu L, Zhang XH, et al.
Densification, microstructure and mechanical properties of ZrB2-SiCw ceramic composites
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 29 (13) 2893-2901 2009

Du SY, Xu L, Zhang XH, et al.
Effect of sintering temperature and holding time on the microstructure and mechanical properties of ZrB2-SiCw composites
MATERIALS CHEMISTRY AND PHYSICS 116 (1) 76-80 JUL 2009

Li P, Zhou WC, Zhu JK, et al.
Influence of TiB2 content and powder size on the dielectric property of TiB2/Al2O3 composites
SCRIPTA MATERIALIA 60 (9) 760-763 MAY 2009

Mukhopadhyay, A., Raju, G.B., Basu, B., Suri, A.K.
Correlation between phase evolution, mechanical properties and instrumented indentation response of TiB2-based ceramics
Journal of the European Ceramic Society 29 (3), pp. 505-516 2009

Raju, G.B., Basu, B., Suri, A.K.
Oxidation kinetics and mechanisms of hot-pressed TiB2-MoSi 2 composites
Journal of the American Ceramic Society 91 (10), pp. 3320-3327 2008

Mukhopadhyay, A., Raju, G.B., Basu, B.
Understanding influence of MoSi2 addition (5 Weight Percent) on tribological properties of TiB2
Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science 39 (12), pp. 2998-3013 2008

Li, P., Zhou, W.-C., Li, F.-S., Luo, F., Zhu, D.-M.
Dielectric and mechanical properties of TiB2/ZrO2 composites
Gongneng Cailiao/Journal of Functional Materials 39 (8), pp. 1348-1351 2008

Khanra, A.K., Godkhindi, M.M., Pathak, L.C.
Sintering behaviour of ultra-fine titanium diboride powder prepared by self-propagating high-temperature synthesis (SHS) technique
Materials Science and Engineering A 454-455, pp. 281-287 2007

Subramanian, C., Murthy, T.S.R.Ch., Suri, A.K.
Synthesis and consolidation of titanium diboride
International Journal of Refractory Metals and Hard Materials 25 (4), pp. 345-350 2007

Wang, K., Fu, Z.Y., Wang, W.M., Wang, Y.C., Wang, H., Zhang, J.Y., Zhang, Q.J.
Study on the thermodynamics and kinetics in the combustion reaction between titanium and boron powders
Key Engineering Materials 351, pp. 189-194 2007

Raju, G.B., Basu, B.
Densification, sintering reactions, and properties of titanium diboride with titanium disilicide as a sintering aid
Journal of the American Ceramic Society 90 (11), pp. 3415-3423 2007

Basu, B., Raju, G.B., Suri, A.K.
Processing and properties of monolithic TiB2 based materials
International Materials Reviews 51 (6), pp. 352-374 2006

Biswas K, Basu B, Suri AK, et al.
A TEM study on TiB2-20%MoSi2 composite: Microstructure development and densification mechanism
SCRIPTA MATERIALIA 54 (7): 1363-1368 APR 2006

Murthy TSRC, Basu B, Balasubramaniam R, et al.
Processing and properties of TiB2 with MoSi2 sinter-additive: A first report
JOURNAL OF THE AMERICAN CERAMIC SOCIETY 89 (1): 131-138 JAN 2006

Murthy TSRC, Balasubramaniam R, Basu B, et al.
Oxidation of monolithic TiB2 and TiB2-20 wt.% MOSi2 composite at 850 degrees C
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 26 (1-2): 187-192 2006

Kang YS, Kang SH, Kim DJ
Effect of addition of Cr on the sintering of TiB2 ceramics
JOURNAL OF MATERIALS SCIENCE 40 (15): 4153-4155 AUG 2005

Lee KJ, Kang SH, Kim DJ
Enhanced sintering of TiB2 with SiC addition prepared by polycarbosilane infiltration
KEY ENGINEERING MATERIALS 287: 102-107 2005

Kothari, K.B., Wereley, N.M., Radhakrishnan, R.
Rapid consolidation of TiB2 via plasma pressure compaction
American Society of Mechanical Engineers, Aerospace Division (Publication) AD 69, pp. 463-467 2004

Wachsmuth J, Radhakrishnan R, Sudarshan TS
Effect of pulsed current on reactively synthesised TiB2 consolidated by plasma pressure compaction
POWDER METALL 46 (4): 361-364 DEC 2003

Min XM, Xiao RJ, Wang H, et al.
Electronic structure and chemical bond of titanium diboride
J WUHAN UNIV TECHNOL 18 (2): 11-14 JUN 2003

Monteverde F, Guicciardi S, Bellosi A
Advances in microstructure and mechanical properties of zirconium diboride based ceramics
MAT SCI ENG A-STRUCT 346 (1-2): 310-319 APR 15 2003

Wang H, Fu ZY, Gu P, et al.
Mechanical properties and microstructure of TiB2 ceramic influenced by ZrB2 additive
T NONFERR METAL SOC 12 (5): 909-913 OCT 2002

Ma J, Tan GEB, He ZM
Fabrication and characterization of Ti-TiB2 functionally graded material system
METALL MATER TRANS A 33 (3): 681-685 MAR 2002

Monteverde F, Bellosi A
Effect of the addition of silicon nitride on sintering behaviour and microstructure of zirconium diboride
SCRIPTA MATER 46 (3): 223-228 FEB 1 2002

Li LH, Kim HE, Kang ES
Sintering and mechanical properties of titanium diboride with aluminum nitride as a sintering aid
J EUR CERAM SOC 22 (6): 973-977 JUN 2002

Kang SH, Kim DJ, Kang ES, et al.
Pressureless sintering and properties of titanium diboride ceramics containing chromium and iron
J AM CERAM SOC 84 (4): 893-895 APR 2001

Koh YH, Lee SY, Kim HE
Oxidation behavior of titanium boride at elevated temperatures
J AM CERAM SOC 84 (1): 239-241 JAN 2001

Park JH, Lee YH, Koh YH, et al.
Effect of hot-pressing temperature on densification and mechanical properties of titanium diboride with silicon nitride as a sintering aid
J AM CERAM SOC 83 (6): 1542-1544 JUN 2000

48. J.C.Shin, C.S.Hwang, H.J.Kim and S.O.Park, "Leakage current of sol-gel derived Pb(Zr,Ti)O3 thin films having Pt electrodes", Appl. Phys. Lett., 75[21], p.3411-3413 (1999) -11 [43]

Kothari, D.ab , Upadhyay, S.K.b, Jariwala, C.a, Raole, P.M.a, Raghavendra Reddy, V.b
Reduced leakage in epitaxial BiFeO3 films following oxygen radio frequency plasma treatment
Journal of Applied Physics, Volume 113, Issue 21, Article number 214109, 7 June 2013

Pham, T.V., Bui, T.N.Q., Phan, T.T., et al.
Analysis on interface layer between Pt electrode and ferroelectric layer of solution-processed PZT capacitor
Materials Research Society Symposium Proceedings 1368 , pp. 41-46 2011

Xiao, Y.G., Tang, M.H., Li, J.C.
The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films
2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 , art. no. 6137088 , pp. 78-82 2011

Tang, S.
Leakage current of Pt/PbTiO 3/PbZr 0.3Ti 0.7O 3/PbTiO 3/Pt integrated capacitors etched in non-crystalline phase
Ferroelectrics, Letters Section 39 (1-3) , pp. 25-30 2012

Wang, Longhai; Tian, Bin; Zou, Lianying; et al.
Leakage Current and Dielectric Properties of Integrated Ferroelectric Capacitor Etched in Non-Crystalline Phase
Integrated Ferroelectrics 132 (1) , pp. 107-113, 2012

Zhang, L. B.; Tang, M. H.; Li, J. C.; et al.
Effects of applied bias voltage in tunnel junctions with ferroelectric barrier
Solid-State Electronics 68 , pp. 8-12, 2012

Yin, S.; Niu, G.; Vilquin, B.; et al.
Epitaxial growth and electrical measurement of single crystalline Pb(Zr0.52Ti0.48)O-3 thin film on Si(001) for micro-electromechanical systems
Thin Solid Films 520 (14) , pp. 4572-4575, 2012

Zhang, L.B., Tang, M.H., Li, J.C., Xiao, Y.G., Zeng, Z.Q., Wang, Z.P., Wang, G.Y., (...), He, J.
Magnetoelectric effect in ferromagnetic-ferroelectric tunneling junctions
EPJ Applied Physics 55 (3), art. no. 30601 2011

Proie, R.M., Polcawich, R.G., Pulskamp, J.S., Ivanov, T., Zaghloul, M.E.
Development of a PZT MEMS switch architecture for low-power digital applications
Journal of Microelectromechanical Systems 20 (4), art. no. 5887374, pp. 1032-1042 2011

Li, W., Chi, Q., Fei, W.
Microstructures and electric properties of highly (111)-oriented Nb-doped Pb(Zr0.2,Ti0.8)O3 films with Pb 0.8La0.1Ca0.1Ti0.975O3 seed layer
Journal of the American Ceramic Society 94 (5), pp. 1503-1508 2011

Zhang L, Zhai JW, Mo WF, et al.
The dielectric and leakage current behavior of CoFe2O4-BaTiO3 composite films prepared by combining method of sol-gel and electrophoretic deposition
SOLID STATE SCIENCES 12 4 509-514 APR 2010

Zhou Y, Cheng CS, Zhao JW, et al.
Investigation of Structural and Physical Properties of Pt/Pb(Zr0.4Ti0.6)O-3/ITO Capacitors Fabricated on Glass Substrate
JOURNAL OF INORGANIC MATERIALS 25 3 242-246 MAR 2010

Bai W, Meng XJ, Lin T, et al.
Effect of Fe-doping concentration on microstructure, electrical, and magnetic properties of Pb(Zr0.5Ti0.5)O-3 thin films prepared by chemical solution deposition
JOURNAL OF APPLIED PHYSICS 106 12 DEC 15 2009

Guo YY, Wei T, He QY, et al.
Dynamic hysteresis scaling of ferroelectric Pb0.9Ba0.1(Zr0.52Ti0.48)O-3 thin films
JOURNAL OF PHYSICS-CONDENSED MATTER 21 48 DEC 2 2009

Solnyshkin AV, Troshkin AS, Bogomolov AA, et al.
Current-Voltage Characteristics and Photostimulated Conductivity in Ferroelectric Heterogeneous Structure Al/Sn2P2S6/Al
INTEGRATED FERROELECTRICS 106 61-69 2009

Wang J, Zhang TJ, Xia HY, et al.
Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba, Sr)TiO3 thin film
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY 47(1), pp.102-106 2008

Liang YC, Chu JP
Growth-temperature-dependent electrical properties of Mn doping Ba0.5Sr0.5TiO3 thin films on La0.72Ca0.28MnO3 electrodes
JAPANESE JOURNAL OF APPLIED PHYSICS 47(1), pp.257-261 2008

Okamura S, Tanimura M, Shima H, et al.
Leakage current property of Pb(Zr-0.4,Ti-0.6)O-3 thin-film capacitors with highly rectangular hysteresis property
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 Book Series: IEEE International Symposium on Applications of Ferroelectrics Pages: 91-93 Published: 2007

Izyumskaya N, Alivov Y, Cho SJ, et al.
Processing, structure, properties, and applications of PZT thin films
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES Volume: 32 Issue: 3-4 Pages: 111-202 Published: 2007

Pintilie, L., Vrejoiu, I., Hesse, D., LeRhun, G., Alexe, M.
Ferroelectric polarization-leakage current relation in high quality epitaxial Pb (Zr,Ti) O3 films
Physical Review B - Condensed Matter and Materials Physics 75 (10), art. no. 104103 2007

Pintilie, L., Vrejoiu, I., Hesse, D., LeRhun, G., Alexe, M.
Extrinsic contributions to the apparent thickness dependence of the dielectric constant in epitaxial Pb (Zr,Ti) O3 thin films
Physical Review B - Condensed Matter and Materials Physics 75 (22), art. no. 224113 2007

Jiang, A.Q., Lin, Y.Y., Tang, T.A.
Charge injection and polarization fatigue in ferroelectric thin films
Journal of Applied Physics 102 (7), art. no. 074109 2007

Miao, J., Yuan, J., Wu, H., Yang, S.B., Xu, B., Cao, L.X., Zhao, B.R.
Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films
Applied Physics Letters 90 (2), art. no. 022903 2007

Zubko, P., Jung, D.J., Scott, J.F.
Electrical characterization of PbZr0.4Ti0.6O 3 capacitors
Journal of Applied Physics 100 (11), art. no. 114113 2006

Kim, J.K., Kim, S.S., Choi, E.J., Kim, W.J., Bhalla, A.S., Song, T.K.
Enhanced ferroelectric properties of Mn-doped BiFeO3 thin films prepared by chemical solution deposition
Journal of the Korean Physical Society 49 (SUPPL. 2), pp. S566-S570 2006

Sim JS, Zhao JS, Lee HJ, et al.
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Huang CK, Chang CH, Wu TB
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Li JT, Dong XL
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MATERIALS LETTERS 59 (23): 2863-2866 OCT 2005

Zheng, P., Cheng, J., Lu, W., Meng, Z.
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CHINESE PHYSICS LETTERS 22 (3): 697-700 MAR 2005

Juan PC, Chou HC, Lee JYM
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Kim KT, Kim CI
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49. Suk-Kyoung Hong, Oh Seong Kwon and Cheol Seong Hwang, "Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing", Appl. Phys. Lett., 76[3], p.324-326 (2000) -1 [19]

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50. Jae Kyeong Jeong, Hoon Joo Na, Cheol Seong Hwang, Hyeong Joon Kim and Wook Bahng, "Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilylmethane precursor", J. Cryst. Growth, 210[4], p.629-636 (2000) -3 [10]

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Dhiman, R. , Morgen, P.
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51. Sang Yeol Kang, Kook Hyeon Choi, Seok Kyu Lee, Cheol Seong Hwang and Hyeong Joon Kim, "Thermodynamic calculations and metalorganic chemical vapor deposition of ruthenium thin films using bis(ethyl--cyclopentadienyl)Ru for memory applications", J. Electrochem. Soc., 147[3], p.1161-1167 (2000) -3 [56]

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Ando, T; Nakata, N; Suzuki, K; Matsumoto, T; Ogo, S.
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Dhar Sukanya; Varade A.; Shivashankar S. A.
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Park, S.K., Kanjolia, R., Anthis, J., Odedra, R., Boag, N., Wielunski, L., Chabal, Y.J.
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Kim, S.K., Lee, S.W., Han, J.H., Lee, B., Han, S., Hwang, C.S.
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Thom KM, Ekerdt JG
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ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 12 D80-D83 2009

Thom, Kelly M.,Ekerdt, J. G.
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Kadoshima, M., Aminaka, T., Kurosawa, E., Aoyama, T., Nara, Y., Ohji, Y.
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Journal of the Electrochemical Society 155 (5) D389-D394 2008

Dhar, S., Dharmaprakash, M.S., Shivashankar, S.A.
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Kadoshima, M., Sugita, Y., Shiraishi, K., Watanabe, H., Ohta, A., Miyazaki, S., Nakajima, K., Ohji, Y.
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ECS Transactions 11 (4) 169-180 2007

Koo, H.-C., Kim, J.J., Kim, K.
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Gatineau J, Dussarrat C
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Kim, S.K., Lee, S.Y., Lee, S.W., Hwang, G.W., Hwang, C.S., Lee, J.W., Jeong, J.
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Kim H
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Kawano, K., Kosuge, H., Oshima, N., Funakubo, H.
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ECS Transactions 1 (5) 139-144 2005

Kondoh E
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Kang SY, Hwang CS, Kim HJ
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Luo B, Wang Q, White JM
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Han H, Kim JJ, Yoon DY
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Goswami, I., Laxman, R.
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Semiconductor International 27 (5) 49-54 2004

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Hoover, C.A., Litwin, M.M., Peck, J., Piotrowski, G.B., Thompson, D.M., Eisenbraun, E.T., Papadatos, F.
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Oshima, N., Shibutami, T., Kawano, K., Yokoyama, S., Funakubo, H.
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Proceedings - Electrochemical Society 28, pp. 277-285 2003

Shibutami, T., Kawano, K., Oshima, N., Yokoyama, S., Funakubo, H.
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Materials Research Society Symposium - Proceedings 748, pp. 111-116 2003

Kim, J.J., Kim, M.S., Yoon, D.Y.
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Advanced Materials 15 (6) 105-109 2003

Kim JJ, Kim MS, Yoon DY
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B MATER SCI 25 (5): 391-398 OCT 2002

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Kang, S.Y., Hwang, C.S., Kim, H.J.
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Kim HR, Jeong S, Jeon CB, et al.
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52. Ju Cheol Shin, Cheol Seong Hwang and Hyeong Joon Kim, "Electrical conduction properties of sputter-grown (Ba,Sr)TiO3 thin films having IrO2 electrodes", Appl. Phys. Lett., 76[12], p.1609-1611 (2000) -3 [24]

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Liu, W.F., Wang, S.Y., Wang, C.
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Sun, J., Zheng, X.J., Yin, W., Tang, M.H., Li, W.
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JAPANESE JOURNAL OF APPLIED PHYSICS 48 9 Part 2 Sp. Iss. SI Part 2 Sp. Iss. SI SEP 2009

Chen CY, Chou JC, Chou HT
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 6 G59-G64 2009

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JOURNAL OF PHYSICS D-APPLIED PHYSICS 42 075302 2009

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Materials Letters 61 (1), pp. 216-218 2007

Yan X, Zhang QY, Fan XD
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Hara, T., Nishikawa, H., Konushi, S., Fukumaru, F., Nambu, S.
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Jiang, Y.P., Tang, X.G., Liu, Q.X., Li, Q., Ding, A.L.
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J PHOTOCH PHOTOBIO A 152 (1-3): 259-265 SEP 20 2002

54. Suk-Kyoung Hong, Chung Won Suh, Chang Goo Lee, Seok Won Lee, Eung Youl Kang, Nam Soo Kang, Cheol Seong Hwang and Oh Seong Kwon, "Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications", Appl. Phys. Lett., 77[1], p.76-78 (2000) -7 [25]

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, Volume: 110, Issue: 1, pp. 211-216, JAN 2013

Chen, Kai-Huang, Cheng, Chien-Min, Lin, Chun-Cheng, Tsai, Jen-Hwan.
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INTEGRATED FERROELECTRICS, Volume: 143, Issue: 1, pp.40-46 JAN 1 2013

Kim, JW; Osumi, T; Mastuoka, M; Tai, T; Nishide, M; Funakubo, H; Shima, H; Nishida, K; Yamamoto, T.
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Japanese Journal of Applied Physics 51 (9 PART 2) , art. no. 09LA01 2012

Alvine, K.J.; Shutthanandan, V.; Arey, B.W.; Wang, C.; Bennett, W.D.; Pitman, S.G.
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Alvine K. J.; Shutthanandan V.; Bennett W. D.; et al.
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APPLIED PHYSICS LETTERS 97 (22) 221911 NOV 29 2011

Niu, G., Yin, S., Saint-Girons, G., Gautier, B., Lecoeur, P., Pillard, V., Hollinger, G., Vilquin, B.
Epitaxy of BaTiO3 thin film on Si(0 0 1) using a SrTiO 3 buffer layer for non-volatile memory application
Microelectronic Engineering 88 (7), pp. 1232-1235 2011

Chen, K.-H., Cheng, C.-M., Shih, C.-C., Tsai, J.-H.
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Chen KH, Chang TC, Chang GC, et al.
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 99 1 291-295 APR 2010

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FERROELECTRICS 385 54-61 2009

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FERROELECTRICS 385 62-68 2009

Chen, K.-H., Chen, Y.-C., Chia, W.-K., Chen, Z.-S., Yang, C.-F., Chung, H.-H.
Electrical and physical characteristics of Ba(Zr0.1Ti 0.9)O3 thin films under oxygen plasma treatment for nonvolatile memory devices application
Key Engineering Materials 368-372 PART 1, pp. 75-77 2008

Yang CF, Chen KH, Chen YC, et al.
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 90(2), pp. 329-331 2008

Kai-Huang Chen, Ying-Chung Chen, Cheng-Fu Yang and Ting-Chang Chang.
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Journal of Physics and Chemistry of Solids Volume 69, Issues 2-3, Pages 461-464 February-March 2008

Chen, K.-H., Cheng, C.-C., Chen, Y.-C., Chang, T.-C.
Reliability of Ba(Zr0.1Ti0.9)O3 ferroelectric thin films under various frequencies for nonvolatile memory application
Key Engineering Materials 336-338 I, pp. 73-75 2007

Yang, C.-F., Chen, K.-H., Chen, Y.-C., Chang, T.-C.
Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O 3 gated oxide film
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 54 (9), pp. 1726-1730 2007

Chen, K.-H., Chen, Y.-C., Chen, Z.-S., Yang, C.-F., Chang, T.-C.
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Applied Physics A: Materials Science and Processing 89 (2), pp. 533-536 2007

Zhang, Z., Zhu, J., Xie, D., Liu, Z.
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J KOREAN PHYS SOC 42: S1211-S1214 Suppl. S APR 2003

Yoon JG, Seo S, Kang BS, et al.
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JPN J APPL PHYS 1 41 (11B): 6781-6784 NOV 2002

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JPN J APPL PHYS 1 41 (12): 7433-7436 DEC 2002

Oh SH, Hong SK, Kim JG, et al.
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APPL PHYS LETT 81 (22): 4230-4232 NOV 25 2002

Chon U, Kim KB, Jang HM
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Hong SK, Yang B, Oh SH, et al.
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Hong SK, Yoon YH, Baek YK, et al.
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55. Byoung Taek Lee and Cheol Seong Hwang, "Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films", Appl. Phys. Lett., 77[1], p.124-126 (2000) -7 [88]

Levasseur, D. , El-Shaarawi, H.B. , Pacchini, S., Rousseau, A., Payan, S., Guegan, G., Maglione, M.
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JOURNAL OF APPLIED PHYSICS, Volume: 114, Issue: 2, Article Number: 027002, JUL 14 2013

Lian Cui, Zhiyou Han, Quan Xu, Xu Xu, Yukai Gao, Jixin Che and Tianquan Lu
Influence of electrodes on polarization-reversal characteristics of a ferroelectric thin film
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume: 250, Issue: 9 pp.1804-1809, SEP 2013

Levasseur, D., El-Shaarawi, H.B., Pacchini, S., Rousseau, A., Payan, S., Guegan, G., Maglione, M.
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Journal of the European Ceramic Society, Volume 33, Issue 1, pp.139-146, January 2013

Kasamatsu, Shusuke; Tada, Tomofumi; Watanabe, Satoshi
Parallel-sheets model analysis of space charge layer formation at metal/ionic conductor interfaces
SOLID STATE IONICS Volume: 226 Pages: 62-70 DOI: 10.1016/j.ssi.2012.08.009 Published: OCT 15 2012

Liao, Jiaxuan; Xu, Ziqiang; Wei, Xubo; et al.
Influence of preheating on crystallization and growing behavior of Ce and Mn doped Ba0.6Sr0.4TiO3 film by sol-gel method
SURFACE & COATINGS TECHNOLOGY Volume: 206 Issue: 22 Pages: 4518-4524 DOI: 10.1016/j.surfcoat2012.02.050 Published: JUN 25 2012

Lee, SY; Seog, HJ; Ahn, CW; Ullah, A; Kim, IW
Interfacial Dead Layers on Lead Free Ferroelectric (K0.5Na0.5)(Mn0.005Nb0.995)O-3 Thin Films
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 51 Issue: 9 Special Issue: SI Article Number: 09MD03 DOI: 10.1143/JJAP.51.09MD03 Part: Part 3 Published: SEP 2012

Sekhar, KC; Key, SH; Hong, KP; Han, CS; Yook, JM; Kim, DS; Kim, JC; Park, JC; Cho, YS.
Thickness-dependent tunable characteristics of (Ba 0.5Sr 0.5) 0.925K 0.075TiO 3 thin films prepared by pulsed laser deposition
Current Applied Physics 12 (3) , pp. 654-658 2012

Reck, J.N., Cortez, R., Xie, S., Zhang, M., O'Keefe, M., Dogan, F.
Chemical and microstructural characterization of rf-sputtered BaTiO 3 nano-capacitors with Ni electrodes
Applied Surface Science 258 (15) , pp. 5599-5604 2012

Wang, Z.R., Xin, J.Z., Ren, X.C., Wang, X.L., Leung, C.W., Shi, S.Q., Ruotolo, A., Chan, P.K.L.
Low power flexible organic thin film transistors with amorphous Ba 0.7Sr 0.3TiO 3 gate dielectric grown by pulsed laser deposition at low temperature
Organic Electronics: physics, materials, applications 13 (7) , pp. 1223-1228 2012

Wang, M., Li, J., Lei, Q., Yu, J., Zhou, W.
Fabrication, dielectric and ferroelectric properties of Ba 0.6Sr0.4TiO3 film with preferred orientation
Journal of Materials Science: Materials in Electronics 22 (8),1033-1039 2011

Minha Seo, Sang Ho Rha, Seong Keun Kim, Jeong Hwan Han, Woongkyu Lee, Sora Han, and Cheol Seong Hwang
The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
J. Appl. Phys. 110, 024105 doi:10.1063/1.3605527 2011

Liang, Y.-C., Huang, C.-L., Hu, C.-Y.
Effects of growth temperature on structure and electrical properties of dielectric (Ba,Sr)TiO3 capacitors with transparent conducting oxide electrodes
Journal of Alloys and Compounds 509 (30), pp. 7948-7952 2011

Qiao, L., Bi, X.
Enhanced ferroelectricity of BaTiO3 film by optimizing its conducting electrode layer
Journal of Materials Chemistry 21 (17), pp. 6280-6285 2011

Tian, M., Li, M., Li, J.C.
Effect of size on dielectric constant for low dimension materials
Physica B: Condensed Matter 406 (3), pp. 541-544 2011

Bastani, Y., Schmitz-Kempen, T., Roelofs, A., Bassiri-Gharb, N.
Critical thickness for extrinsic contributions to the dielectric and piezoelectric response in lead zirconate titanate ultrathin films
Journal of Applied Physics 109 (1), art. no. 014115 2011

Wang Meng; Li Jianjun; Lei Qiang; et al.
Fabrication, dielectric and ferroelectric properties of Ba(0.6)Sr(0.4)TiO(3) film with preferred orientation
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 22 Issue: 8 Pages: 1033-1039 DOI: 10.1007/s10854-010-0255-z Published: AUG 2011

Doan, T.M., Lu, L., Lai, M.O.
Thickness dependence of structure, tunable and pyroelectric properties of laser-ablated Ba(Zr0.25Ti0.75)O3 thin films
Journal of Physics D: Applied Physics 43 (3), art. no. 035402 2010

Liang, Y.-C.
Integration of high-k perovskite capacitor on transparent conductive Zr-doped In2O3 epitaxial thin films
Thin Solid Films 518 (21 SUPPL.), pp. S22-S25 2010

Horiuchi, N., Hoshina, T., Takeda, H., Tsurumi, T.
Influence of interface on tunability in barium strontium titanate
Ceramic Transactions 216, pp. 37-42 2010

Yang, L., Wang, G., Dong, X., Remiens, D.
Unusual curie point independence of thickness and interfacial properties for perfectly (111)-oriented Ba0.6Sr0.4TiO3 thin films
Journal of the American Ceramic Society 93 (9), pp. 2526-2529 2010

Kim, S.K., Lee, S.W., Han, J.H., Lee, B., Han, S., Hwang, C.S.
Capacitors with an equivalent oxide thickness of <0.5 nm for nanoscale electronic semiconductor memory
Advanced Functional Materials 20 (18), pp. 2989-3003 2010

Zhu XH, Defay E, Suhm A, et al.
Unraveling dielectric and electrical properties of ultralow-loss lead magnesium niobate titanate pyrochlore dielectric thin films for capacitive applications
JOURNAL OF APPLIED PHYSICS 107 10 MAY 15 2010

Sama N, Soyer C, Remiens D, et al.
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SENSORS AND ACTUATORS A-PHYSICAL 158 1 99-105 2010

Lou XJ, Wang J
Effect of manganese doping on the size effect of lead zirconate titanate thin films and the extrinsic nature of 'dead layers'
JOURNAL OF PHYSICS-CONDENSED MATTER 22 5 055901 2010

Doan TM, Lu L, Lai MO
Interfacial characteristic of (Ba,Sr)TiO3 thin films deposited on different bottom electrodes
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 20 12 1208-1213 2009

Wang JZ, Zhang TJ, Zhang BS, et al.
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 20 12 1208-1213 DEC 2009

Zhao C, Zhu Q, Wu D, et al.
Composition-dependent electrical characteristics and interface microstructures of solution-derived Nd-substituted Bi4Ti3O12 thin films on Pt electrodes
JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 185412 2009

Xiong HF, Tang XG, Jiang LL, et al.
Enhanced Dielectric Properties of Nanocrystalline (Ba0.65Sr0.35)TiO3 Thin Films Grown on CaRuO3 Buffer Layers
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 9 p.5834-5838 2009

He J, Jiang JC, Meletis EI, et al.
Twin-coupled domain structures in epitaxial relaxor ferroelectric Ba(Zr,Ti)O3 thin films on (001) MgO substrate
PHILOSOPHICAL MAGAZINE LETTERS Volume: 89 p.493-503 2009

Jiang LL, Tang XG, Li Q, et al.
Dielectric properties of (Ba,Ca)(Zr,Ti)O-3/CaRuO3 heterostructure thin films prepared by pulsed laser deposition
VACUUM 83 p.1018-1021 2009

Horiuchi N, Matsuo T, Hoshina T, et al.
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APPLIED PHYSICS LETTERS 94 102904 2009

Song, S.N., Zhai, J.W., Gao, L.N., Yao, X., Hung, T.F., Xu, Z.K.
Enhanced electric field tunable dielectric properties of Ba (Sn0.15 Ti0.85) O3 thin films
Journal of Applied Physics 104 (9), art. no. 096107 2008

Chen HW, Yang CR, Fu CL, et al.
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APPLIED SURFACE SCIENCE 254(10), pp.3175-3179 2008

Finstrom, N.H., Cagnon, J., Stemmer, S.
Properties of dielectric dead layers for SrTi O3 thin films on Pt electrodes
Journal of Applied Physics 101 (3), art. no. 034109 2007

Hong, X.K., Hu, G.J., Chen, J., Chu, J.H., Dai, N.
Structural and electric properties of sol-gel-derived Ba 0.9Sr0.1TiO3 multilayers
Journal of the American Ceramic Society 90 (4), pp. 1280-1282 2007

Panda, B., Roy, A., Dhar, A., Ray, S.K.
Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films
Journal of Applied Physics 101 (6), art. no. 064116 2007

Lou, X.J., Zhang, M., Redfern, S.A.T., Scott, J.F.
Fatigue as a local phase decomposition: A switching-induced charge-injection model
Physical Review B - Condensed Matter and Materials Physics 75 (22), art. no. 224104 2007

Yang, H., Suvorova, N.A., Jain, M., Kang, B.S., Li, Y., Hawley, M.E., Dowden, P.C., (...), Lu, C.J.
Effective thickness and dielectric constant of interfacial layers of Pt/Bi3.15Nd0.85Ti3O12/SrRuO 3 capacitors
Applied Physics Letters 90 (23), art. no. 232909 2007

Xiao, Z., Cheng, X., Yan, X.
Effect of post-deposition annealing on ZrW2O8 thin films prepared by radio frequency magnetron sputtering
Surface and Coatings Technology 201 (9-11 SPEC. ISS.), pp. 5560-5563 2007

JY Ha, JW Choi, CY Kang, SF Karmanenko, DJ Cho
Thickness dependent ferroelectric properties of BSTO thin films deposited by RF magnetron sputtering
Journal of Electroceramics 17 (2-4) 2006

Kim J, Pak J, Nam K, et al.
Calculation of the intrinsic dead layers thicknesses from Au/Ba0.5Sr0.5TiO3/Pt thin film capacitors
JOURNAL OF ELECTROCERAMICS 16 (4): 495-498 JUL 2006

Liao JX, Yang CR, Zhang JH, et al.
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APPLIED SURFACE SCIENCE 252 (20): 7407-7414 AUG 15 2006

Miao J, Wang Y, Tian HY, et al.
A quantitative analysis on the interfacial effect in the Pt/Ba0.5Sr0.5TiO3/La0.67Sr0.33MnO3 heterostructure
JOURNAL OF PHYSICS D-APPLIED PHYSICS 39 (12): 2565-2570 JUN 21 2006

Liao JX, Yang CR, Tian Z, et al.
The influence of post-annealing on the chemical structures and dielectric properties of the surface layer of Ba0.6Sr0.4TiO3 films
JOURNAL OF PHYSICS D-APPLIED PHYSICS 39 (11): 2473-2479 JUN 7 2006

Ehrhart P, Thomas R
Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes
JOURNAL OF APPLIED PHYSICS 99 (11): Art. No. 114108 JUN 1 2006

Chen HW, Yang CR, Fu CL, et al.
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APPLIED SURFACE SCIENCE 252 (12): 4171-4177 APR 15 2006

Tang QW, Shen MR, Fang L
Comparison of temperature-dependent dielectric characteristic in two different (Ba,Sr)TiO3 films
ACTA PHYSICA SINICA 55 (3): 1346-1350 MAR 2006

Zhu XH, Chan HLW, Choy CL, et al.
A comparative microstructural study of compositionally up- and down-graded (Ba,Sr)TiO3 thin films epitaxially grown on (La,Sr)CoO3-covered MgO(100) substrates by pulsed laser deposition
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 82 (4): 709-713 MAR 2006

Zhu XH, Zheng DN, Zeng H, et al.
Effects of growth temperature and film thickness on the electrical properties of Ba0.7Sr0.3TiO3 thin films grown on platinized silicon substrates by pulsed laser deposition
THIN SOLID FILMS 496 (2): 376-382 FEB 21 2006

Tang, X.G., Liu, Q.X., Jiang, Y.P., Zheng, R.K., Chan, H.L.W.
Enhanced dielectric properties of highly (100)-oriented Ba(Zr,Ti)O 3 thin films grown on La0.7Sr0.3MnO3 bottom layer
Journal of Applied Physics 100 (11), art. no. 114105 2006

Regnery S, Ding Y, Ehrhart P, et al.
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JOURNAL OF APPLIED PHYSICS 98 (8): Art. No. 084904 OCT 15 2005

Liao, J.X., Yang, C.R., Chen, H.W., Fu, C.L., Leng, W.J., Zhao, L., Gao, Z.Q.
The effect of post-annealing on barium strontium titanate films deposited by radio frequency magnetron sputtering
Surface Engineering in Materials Science III - Proceedings of a Symposium sponsored by the Surface Engineering Committee of the(MPMD) of the Minerals, Metals and Materials Society, TMS, pp. 317-323 2005

Bae HJ, Norton DP
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 81 (8): 1657-1660 DEC 2005

Zheng FG, Chen JP, Li XW, et al.
Preparation of transparent ferroelectric Pb0.92La0.08Ti0.96O3 thick films on ITO-coated glass substrates by a sol-gel route
MATERIALS LETTERS 59 (27): 3498-3502 NOV 2005

Kim J, Pak J, Nam K, et al.
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY 47: S349-S352 Suppl. 2 SEP 2005

Guo HY, Ye ZG
Impedance spectroscopic characterization of sol-gel prepared SrTiO3 thin films on silicon
FERROELECTRICS 318: 193-199 2005

He JQ, Vasco E, Jia CL, et al.
Direct observation of a fully strained dead layer at Ba0.7Sr0.3TiO3/SrRuO3 interface
APPLIED PHYSICS LETTERS 87 (6): Art. No. 062901 AUG 8 2005

Cho YW, Choi SK, Rao GV
The influence of an extrinsic interfacial layer on the polarization of sputtered BaTiO3 film
APPLIED PHYSICS LETTERS 86 (20): Art. No. 202905 MAY 16 2005

Cheng YL, Wang Y, Chan HLW
Ba0.5Sr0.5TiO3 thin film based ring resonators
INTEGRATED FERROELECTRICS 70: 151-157 2005

He SM, Li YR, Liu XZ, et al.
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THIN SOLID FILMS 478 (1-2): 261-264 MAY 1 2005

Chen B, Yang H, Miao J, et al.
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Lahiry S, Mansingh A
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INTEGRATED FERROELECTRICS 66: 311-320 2004

Park WY, Hwang CS
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Zhu XH, Peng W, Miao J, et al.
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Chen B, Yang H, Zhao L, et al.
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Vorobiev A, Rundqvist P, Khamchane K, et al.
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Zhu XH, Zhu JG, Zheng DN, et al.
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Wallace RM, Wilk GD
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CRIT REV SOLID STATE 28 (4): 231-285 2003

Fang L, Shen MR
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Cheng YL, Wang Y, Chan HLW, et al.
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Mueller AH, Suvorova NA, Irene EA, et al.
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Zhu X, Chan HLW, Choy CL, et al.
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Zubko SP
Modeling dielectric response and losses of ferroelectrics at microwave frequencies
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Parker CB, Maria JP, Kingon AI
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APPL PHYS LETT 81 (2): 340-342 JUL 8 2002

Hwang CS
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PHYSICA B 311 (3-4): 250-262 FEB 2002

Tyunina M, Levoska J
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Chen CL, Shen J, Chen SY, et al.
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56. Seung-Hyun Kim, Dong-Su Lee, Cheol Seong Hwang, Dong-Joo Kim and A.I. Kingon, "Thermally induced voltage offsets in PZT thin films" Appl. Phys. Lett., 77[19], p.3036 (2000) -11 [24]

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Wu Xiumei; Dong Shuai; Zhai Ya; et al.
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Lew C, Thompson MO
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Okatan MB, Alpaya SP
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APPLIED PHYSICS LETTERS Volume: 95 092902 2009

Kim GH, Lee HJ, Jiang AQ, et al.
An analysis of imprinted hysteresis loops for a ferroelectric Pb(Zr,Ti)O-3 thin film capacitor using the switching transient current measurements
JOURNAL OF APPLIED PHYSICS 105 044106 2009

Soichiro Okamura, Soichiro Koshika, Hiromi Shima, Hroshi Naganuma
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Bharadwaja, S.S.N., Dechakupt, T., Trolier-Mckinstry, S., Beratan, H.
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Z. Ye, M. H. Tang, Y. C. Zhou, X. J. Zheng, C. P. Cheng, Z. S. Hu, and H. P. Hu
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Morita, T., Kadota, Y., Hosaka, H.
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Kim, D.J., Yoon, J.-G., Song, T.K., Yoo, D.C., Im, D.H., Heo, J.E., Kim, I.S., Lee, C.M.
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Fu D, Suzuki K, Kato K, et al.
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Kim DJ, Jo JY, So YW, et al.
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Kang BS, Kim DJ, Jo JY, et al.
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APPL PHYS LETT 84 (16): 3127-3129 APR 19 2004

Ozgul M, Trolier-McKinstry S, Randall CA
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Rodriguez JA, Remack K, Boku K, et al.
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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 4 (3): 436-449 SEP 2004

Rodriguez, J., Remack, K., Boku, K., Udayakumar, K.R., Aggarwal, S., Summerfelt, S., Moise, T., (...), Fox, G.
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Annual Proceedings - Reliability Physics (Symposium), pp. 200-208 2004

Kim SH, Koo CY, Park DY, et al.
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J KOREAN PHYS SOC 42: S1417-S1419 Suppl. S APR 2003

Kang BS, Yoon JG, Kim DJ, et al.
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APPL PHYS LETT 82 (13): 2124-2126 MAR 31 2003

Kim SH, Park DY, Woo HJ, et al.
Orientation effects in chemical solution derived Pb(Zr-0.3,Ti-0.7)O-3 thin films on ferroelectric properties
THIN SOLID FILMS 416 (1-2): 264-270 SEP 2 2002

Grossmann M, Lohse O, Bolten D, et al.
The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films. I. Dopant, illumination, and bias dependence
J APPL PHYS 92 (5): 2680-2687 SEP 1 2002

Kim SH, Park DY, Woo HJ, et al.
Effects of IrO2/Pt hybrid electrodes on the crystallization and ferroelectric performances of sol-gel-derived Pb(Zr,Ti)O-3 thin film capacitors
J MATER RES 17 (7): 1735-1742 JUL 2002

Grossmann M, Lohse O, Schneller T, et al.
Imprint in ferroelectric Pb(Zr,Ti)O-3 thin films with thin SrRuO3 layers at the electrodes
INTEGR FERROELECTR 37 (1-4): 535-544 2001

Kim SH, Woo HJ, Ha J, et al.
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APPL PHYS LETT 78 (19): 2885-2887 MAY 7 2001

57. Sang Yeol Kang, Kook Hyun Choi, Seok Kiu Lee, Cheol Seong Hwang and Hyeong Joon Kim, "Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition", J. Korean Phys. Soc. Vol. 37, No. 6, p.1040-1044 (2000) - 12 [11]

Cui, Hao; Park, Jin-Hyung; Park, Jea-Gun
Corrosion Inhibitors in Sodium Periodate Slurry for Chemical Mechanical Planarization of Ruthenium Film
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, Volume: 2, Issue: 3, pp.P71-P75, 2013

Cui, Hao; Park, Jin-Hyung; Park, Jea-Gun
Environmentally clean slurry using nano-TiO2-abrasive mixed with oxidizer H2O2 for ruthenium-film chemical mechanical planarization
APPLIED SURFACE SCIENCE, Volume: 282, Pages: 844-850, OCT 1 2013

Cui, H., Park, J.-H., Park, J.-G.
Study of ruthenium oxides species on ruthenium chemical mechanical planarization using periodate-based slurry
Journal of the Electrochemical Society 159 (3) , pp. H335-H341 2012

Kim, I.-K., Nagendra Prasad, Y., Kwon, T.-Y., Kim, H.-M., Busnaina, A.A., Park, J.-G.
Citric acid and NaIO4 based alkaline cleaning solution for particle removal during Post-Ru CMP cleaning
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Devadas Abirami; Baranton Steve; Napporn Teko W.; et al.
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Kim IK, Cho BG, Park JG, et al.
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Kim, I.-K., Kwon, T.-Y., Park, J.-G., Park, H.-S.
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Materials Research Society Symposium Proceedings 991, pp. 283-288 2008

Kim IK, Kang YJ, Kwon TY, et al.
Effect of sodium periodate in alumina-based slurry on RuCMP for metal-insulator-metal capacitor
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Kang SY, Lim HJ, Hwang CS, et al.
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Music S, Popovic S, Maljkovic M, et al.
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Kang, S.Y., Hwang, C.S., Kim, H.J.
Deposition of Ru thin films by MOCVD using direct liquid injection system
Materials Research Society Symposium - Proceedings 672, pp. O3.18.1-O3.18.6 2001

58. Suk-Kyoung Hong, Yang Han Yoon, Yong Ku Baek, Chang Goo Lee, Chung Won Suh, Seok Won Lee, Nam Soo Kang, and Jeong-Mo Hwang, Cheol Seong Hwang and Oh Seong Kwon, "Inter-metal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors", J. Mater. Res., 15[12], p.2822 (2000) -12 [4]

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Oh SH, Noh KH, Lee SS, et al.
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Hong SK, Yang B, Oh SH, et al.
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59. Soo Gil Kim, Kook Hyun Choi, Jae Hwan Eun, Hyeong Joon Kim and Cheol Seung Hwang, "Effects of additives on properties of MgO thin films by electrostatic spray deposition", Thin Solid Films, 377-378, p.694-698 (2000) -12 [23]

Choi, KH; Mustafa, M; Ko, JB; Doh, YH.
Investigation of electrostatic atomization of a conjugated polymer (poly[2-methoxy-5-(2 '-ethylhexyloxy)-(p-phenylenevinylene)]) and its film characterization for organic diode applications
THIN SOLID FILMS Volume: 525 Pages: 40-44 DOI: 10.1016/j.tsf.2012.10.048 Published: DEC 15 2012

Garcia-Tamayo, E., Valvo, M., Lafont, U., Locati, C., Munao, D., Kelder, E.M.
Nanostructured Fe2O3 and CuO composite electrodes for Li ion batteries synthesized and deposited in one step
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Raj, A.M.E., Jayachandran, M., Sanjeeviraja, C.
Fabrication techniques and material properties of dielectric MgO thin films-A status review
CIRP Journal of Manufacturing Science and Technology 2 (2), pp. 92-113 2010

Yin, Z.P., Huang, Y.A., Bu, N.B., Wang, X.M., Xiong, Y.L.
Inkjet printing for flexible electronics: Materials, processes and equipments
Chinese Science Bulletin 55 (30), pp. 3383-3407 2010

Al Khateeb S, Button TW, Abell JS
Spray pyrolysis of MgO templates on Hastelloy C276 and 310-austenitic stainless steel substrates for YBa2Cu3O7 (YBCO) deposition by pulsed laser deposition
SUPERCONDUCTOR SCIENCE & TECHNOLOGY 23 9 SEP 2010

Sharma R, Shim S, Mane RS, et al.
Optimization of growth of ternary CuInS2 thin films by ionic reactions in alkaline chemical bath as n-type photoabsorber layer
MATERIALS CHEMISTRY AND PHYSICS 116 p.28-33 2009

Li, C.-F., Ho, W.-H., Yen, S.-K.
Effects of applied voltage on morphology and crystal orientation of Mg (OH)2 coating on PT by electrochemical synthesis
Journal of the Electrochemical Society 156 (2), pp. E29-E34. 2009

Jaworek, A., Sobczyk, A.T.
Electrospraying route to nanotechnology: An overview
Journal of Electrostatics 66 (3-4), pp. 197-219 2008

Ezhil Raj, A.M., Vijayalakshmi, K., Selvan, G., Jayachandran, M., Sanjeeviraja, C.
Influence of metal organic and inorganic precursors on spray pyrolyzed ceramic MgO (2 0 0) thin films for epitaxial over layers
Journal of Non-Crystalline Solids 354 (31), pp. 3773-3779 2008

Jaworek, A.
Electrospray droplet sources for thin film deposition
Journal of Materials Science 42 (1), pp. 266-297 2007

Raj, A.M.E., Nehru, L.C., Jayachandran, M., Sanjeeviraja, C.
Spray pyrolysis deposition and characterization of highly (100) oriented magnesium oxide thin films
Crystal Research and Technology 42 (9), pp. 867-875 2007

Zhu, D., Zheng, C., Liu, Y., Chen, D., He, Z., Wen, L., Cheung, W.Y., Wong, S.P.
Influence of bias voltage on morphology and structure of MgO thin films prepared by cathodic vacuum arc deposition
Surface and Coatings Technology 201 (6), pp. 2387-2391 2006

Neagu R, Perednis D, Princivalle A, et al.
Zirconia coatings deposited by electrostatic spray deposition - A chemical approach
SOLID STATE IONICS 177 (17-18): 1451-1460 JUL 2006

Manders PJD, Wolke JGC, Jansen JA
Bone response adjacent to calcium phosphate electrostatic spray deposition coated implants: an experimental study in goats
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Perednis D, Gauckler LJ
Thin film deposition using spray pyrolysis
JOURNAL OF ELECTROCERAMICS 14 (2): 103-111 MAR 2005

Perednis D, Wilhelm O, Pratsinis SE, et al.
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THIN SOLID FILMS 474 (1-2): 84-95 MAR 1 2005

Nam KH, Han JG
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SURF COAT TECH 174: 212-217 SEP-OCT 2003

Han Y, Jung SJ, Lee JJ, et al.
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Leeuwenburgh S, Wolke J, Schoonman J, et al.
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J BIOMED MATER RES A 66A (2): 330-334 AUG 1 2003

Nomura, M., Meester, B., Schoonman, J., Kapteijn, F., Moulijn, J.A.
Improvement of thermal stability of porous titania films prepared by electrostatic sol-spray deposition (ESSD)
Chemistry of Materials 15 (6), pp. 1283-1288 2003

Park WI, Kim DH, Yi GC, et al.
Heteroepitaxial growth of MgO thin films on Al2O3 (0001) by metalorganic chemical vapor deposition
JPN J APPL PHYS 1 41 (11B): 6919-6921 NOV 2002

Kim SG, Choi KH, Eun JH, Kim HJ, Hwang CS
Effects of additives on properties of MgO thin films by electrostatic spray deposition
THIN SOLID FILMS 392 (1): 149-149 JUL 23 2001

Kim, S.G., Kim, Y.-K., Park, C.-H., Kim, H.J.
Investigation of MgO and Mg1-xTixO thin films by electrostatic spray deposition method for a protective layer of AC-plasma display panel
Materials Research Society Symposium Proceedings 685, pp. 221-226. 2001

60. Cheol Seong Hwang, Jaehoo Park, Doo Young Yang, Cheol Hoon Yang, Dong Hyun Kim, Young Ki Han, Kiyoung Oh and Chul Ju Hwang, "Low temperature metal-organic chemical vapor deposition of (Ba,Sr)TiO3 thin films for capacitor applications", Integ. Ferroelect. 30, 37 (2000) [4]

Lai, Y.-H., Chou, T.-Y., Song, Y.-H., Liu, C.-S., Chi, Y., Carty, A.J., Peng, S.-M., Lee, G.-H.
Synthesis and characterization of ruthenium complexes with two fluorinated amino alkoxide chelates. The quest to design suitable MOCVD source reagents
Chemistry of Materials 15 (12), pp. 2454-2462 2003

Hwang CS, No SY, Park J, et al.
Cation composition control of MOCVD (Ba,Sr) TiO3 thin films along the capacitor hole
J ELECTROCHEM SOC 149 (10): G585-G592 OCT 2002

Yang, C.-H., Han, Y.-K., Kim, D.-H., Han, G.-J., Yang, D.-Y., Oh, K.-Y., Song, J., (...), Hwang, C.-S.
Preparation and characterization of (Ba,Sr)TiO3 thin films by liquid source chemical vapor deposition
Materials Research Society Symposium - Proceedings 672, pp. O9.2.1-O9.2.6 2001

Park J, Hwang CS, Yang DY
Optimization of the annealing process for the (Ba,Sr)TiO3 thin films grown by low-temperature (420 degrees C) metalorganic chemical vapor deposition
J MATER RES 16 (5): 1363-1371 MAY 2001

61. Kyung Woong Park, Youngki Han, Kiyoung Oh, Doo Young Yang, Chul Ju Hwang, Jaehoo Park, and Cheol Seong Hwang, "Low temperature metal-organic chemical vapor deposition of Ru thin films as electrode for high dielectric capacitors", Integ. Ferroelect. 30, 45 (2000) [2]

Lai YH, Chou TY, Song YH, et al.
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CHEM MATER 15 (12): 2454-2462 JUN 17 2003

Yoon DS, Roh JS, Baik HK, et al.
Future direction for a diffusion barrier in future high-density volatile and nonvolatile memory devices
CRIT REV SOLID STATE 27 (3-4): 143-226 2002


62. Seung-Hyun Kim, Hyun-Jung Woo, Jowoong Ha, Cheol Seong Hwang, Hae Ryoung Kim, and Angus I. Kingon, "Thickness effects on imprint in chemical-solution-derived (Pb,La)(Zr,Ti)O3 thin films", Appl. Phys. Lett. 78, 2885 (2001). - 5 [17]

Zhong, C., Wang, X., Fang, J., Li, L.
Investigation of thickness dependence of structure and electric properties of sol-gel-derived BiScO3-PbTiO3 thin films
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Hu ZG, Li YW, Zhu M, et al.
Structure and optical properties of ferroelectric PbZr0.40Ti0.60O3 films grown on LaNiO3-coated platinized silicon determined by infrared spectroscopic ellipsometry
JOURNAL OF PHYSICAL CHEMISTRY C 112(26),pp.9737-9743 2008

Okamura S, Koshika S, Shima H, et al.
Imprint behavior of ferroelectric Pb(ZrTi)O-3 thin-film capacitors in the early stage
INTEGRATED FERROELECTRICS 96, pp. 90-99 2008

Fukushima K, Kobune M, Yamaji T, et al.
Ferroelectric properties and memory characteristics of epitaxial Pb(Zr0.3Ti0.7)O-3 thin films with different thicknesses crystallized by hot isostatic pressing
FERROELECTRICS 2007

Kim, T., Kingon, A.I., Maria, J.-P., Croswell, R.T.
Lead zirconate titanate thin film capacitors on electroless nickel coated copper foils for embedded passive applications
Thin Solid Films 515 (18), pp. 7331-7336 2007

Pintilie, L., Vrejoiu, I., Hesse, D., LeRhun, G., Alexe, M.
Extrinsic contributions to the apparent thickness dependence of the dielectric constant in epitaxial Pb (Zr,Ti) O3 thin films
Physical Review B - Condensed Matter and Materials Physics 75 (22), art. no. 224113 2007

Pintilie, L., Vrejoiu, I., Hesse, D., LeRhun, G., Alexe, M.
Ferroelectric polarization-leakage current relation in high quality epitaxial Pb (Zr,Ti) O3 films
Physical Review B - Condensed Matter and Materials Physics 75 (10), art. no. 104103 2007

Sun MX, Zhong CW, Chen FG, et al.
The imprint rate of Pb(Zr-0.55,Ti-0.45)O-3 ferroelectric thin films
INTEGRATED FERROELECTRICS 78: 53-57 2006

Oh SH, Noh KH, Lee SS, et al.
Performance and reliability of low-temperature processed SrBi2Ta2O9 capacitors for FeRAM applications
J ELECTROCHEM SOC 151 (5): F113-F117 2004

Park HH, Kim WS, Yang JK, et al.
Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors
MICROELECTRON ENG 71 (2): 215-220 FEB 2004

Kim SH, Koo CY, Park DY, et al.
Scaling issues of Pb(Zr,Ti)O-3 capacitor stack for high density FeRAM devices
J KOREAN PHYS SOC 42: S1417-S1419 Suppl. S APR 2003

Kafadaryan EA, Hovsepyan RK, Khachaturova AA, et al.
Far-infrared properties of sol-gel derived PbZr0.52Ti0.48O3 thin films on Pt-coated substrates
J PHYS D APPL PHYS 36 (3): 266-269 FEB 7 2003

Grossmann M, Lohse O, Bolten D, et al.
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J APPL PHYS 92 (5): 2680-2687 SEP 1 2002

Grossmann, M., Lohse, O., Bolten, D., Boettger, U., Waser, R.
Imprint in ferroelectric thin films caused by screening of an electric field in a thin surface layer
Materials Research Society Symposium - Proceedings 688, pp. 49-57 2002

Kang BS, Yoon JG, Song TK, et al.
Retention characteristics of Bi3.25La0.75Ti3O12 films deposited by using pulsed laser deposition
FERROELECTRICS 271: 1653-1658 2002

Kim SH, Park DY, Woo HJ, et al.
Effects of IrO2/Pt hybrid electrodes on the crystallization and ferroelectric performances of sol-gel-derived Pb(Zr,Ti)O-3 thin film capacitors
J MATER RES 17 (7): 1735-1742 JUL 2002

Grossmann M, Lohse O, Schneller T, et al.
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INTEGR FERROELECTR 37 (1-4): 535-544 2001

63. Jaehoo Park and Cheol Seong Hwang and Doo Young Yang, "Optimization of annealing process for the (Ba,Sr)TiO3 thin films grown by low temperature (420) metal-organic chemical vapor deposition", J. Mater. Res. 16, 1363 (2001). - 5 [7]

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Bao, P., Jackson, T.J., Wang, X., Lancaster, M.J.
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64. Suk-Kyoung Hong, B. Yang, Sang Hyun Oh, Young Min Kang, Nam Soo Kang, Cheol Seong Hwang, and Oh Seong Kwon, "Stress effects of the Inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors",J. Appl. Phys. 89, 8011 (2001). - 6 [14]

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65. Seung-Hyun Kim, Jowoong Ha, Cheol Seong Hwang, and Angus I. Kingon, "Ca- and Sr-doped (Pb1-xLax)(ZryTi1-y)1-x/4O3 thin films for low-voltage operation", Thin solid films, 394, 131-135 (2001) - 9 [6]

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66. Hoon Joo Na, Jae Kyeong Jeong, Myung Yoon Um, Bum Seok Kim, Cheol Seong Hwang, and Hyeong Joon Kim, "Effect of annealing on electrical properties of Pt/-SiC contact", Solid State Electronics, 45, 1565 (2001) - 9 [8]

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67. Cheol Seong Hwang, Jaehoo Park, Doo Sup Hwang and Cha Young Yoo, "Compositional variation of metal-organic chemical vapor deposited SrTiO3 thin films along the capacitor hole having a diameter of 0.15m", J. Electrochem. Soc. vol. 148, G636-G639 (2001) - 11 [9]

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Kim, S.K., Lee, S.W., Han, J.H., Lee, B., Han, S., Hwang, C.S.
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Kwon, O.S., Lee, S.W., Han, J.H., Hwang, C.S.
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Watanabe, T., Hoffmann-Eifert, S., Mi, S., Jia, C., Waser, R., Hwang, C.S.
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68. Cheol Seong Hwang, "Bulk- or interface-limited electrical conductions in IrO2(Ba,Sr)TiO3/IrO2 thin film capacitors", J. Mat. Res. 16, p.3476 (2001) - 12 [5]

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69. Hye Ryoung Kim, Seehwa Jeong, Chung Bae Jeon, Oh Seong Kwon, Cheol Seong Hwang, Young Ki Han, Doo Young Yang, Ki Young Oh, "Metalorganic chemical vapor deposition of very thin Pb(Zr,Ti)O-3 thin films at low temperatures for high-density ferroelectric memory applications" J. Mat. Res. 16, p. 3583 (2001) - 12 [31]

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2006 15TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS Book Series: IEEE International Symposium on Applications of Ferroelectrics Pages: 90-93 Published: 2007

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2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 Book Series: IEEE International Symposium on Applications of Ferroelectrics Pages: 156-158 Published: 2007

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Byun, K.-M., Lee, W.-J.
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Current Applied Physics 7 (2), pp. 113-117 2007

Watanabe, T., Hoffmann-Eifert, S., Waser, R., Hwang, C.S.
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Zhao JS, Lee HJ, Lee K, et al.
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Zhao JS, Sim JS, Lee HJ, et al.
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Otani Y, Kamural S, Shiosaki T
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 (3A): 1752-1756 MAR 2006

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Zhao JS, Sim JS, Lee HJ, et al.
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Nagai A, Minamidate J, Asano G, et al.
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Nagai, A., Asano, G., Minamidate, J., Choi, C.J., Cho, C.-R., Park, Y., Funakubo, H.
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Nagai A, Morioka H, Asano G, et al.
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Otani Y, Okamura S, Shiosaki T
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Nagai A, Morioka H, Asano G, et al.
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INTEGRATED FERROELECTRICS 68: 147-154 2004

Otani Y, Okamura S, Shiosaki T
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KEY ENGINEERING MATERIALS 264-268: 459-464 Part 1-3 2004

Byun KM, Lee WJ
Thermochemical stability of IrO2 bottom electrodes in direct-liquid-injection metalorganic chemical vapor deposition of Pb(Zr,Ti)O-3 films
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Zhao JS, Park DY, Seo MJ, et al.
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Shiosaki T, Okamura S, Miyake M, et al.
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Asano G, Oikawa T, Funakubo H, et al.
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70. Seung-Hyun Kim, Dong-Yeon Park, Hyun-Jung Woo, Dong-Soo Lee, Jowoong HC, Cheol Seong Hwang, Si Hwa Chung and Angus I. Kingon, "The low-volatage-switching behavior of sol-gel-derived Pb(Zr,Ti)O-3 thin film capacitors", Integr. Ferroelect., 39, 13 (2001).

71. Jaehoo Park, Byungkeon Park, Moonjoo Cho and Cheol Seong Hwang, Kiyoung Oh and Doo Young Yang, "Chemical Vapor Deposition of HfO2 Thin Films Using a Novel Carbon-Free Precursor: Characterization of the Interface with the Silicon Substrate", J. Electrochem. Soc. vol. 149. G89-G94 (2002) - 1 [33]

Kobashi, K.ab, Nagata, T.b, Ogura, A.a, Nabatame, T.b, Chikyow, T.b
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Journal of Applied Physics Volume 114, Issue 1, Article number 014106, 7 July 2013

Zhang, W., Huang, L., Li, A., Wu, D.
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Consiglio, S., Clark, R.D., Bersch, E., Larose, J.D., Wells, I., Tapily, K., Leusink, G.J., Diebold, A.C.
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Kim JC, Cho YS, Moon SH
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JAPANESE JOURNAL OF APPLIED PHYSICS 48 066515 2009

He, Q., Guo, H.-b., Wei, J.-j., Askari, S.J., Wang, H.-b., Zhang, S.-y., Yang, H., (...), Lu, F.-x.
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Sandell, A., Karlsson, P.G., Richter, J.H., Blomquist, J., Uvdal, P.
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Richter, J.H., Karlsson, P.G., Sanyal, B., Blomquist, J., Uvdal, P., Sandell, A.
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Milanov, A., Bhakta, R., Baunemann, A. et al
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IEEE ELECTRON DEVICE LETTERS 27 (6): 439-441 JUN 2006

Zhong LJ, Daniel WL, Zhang ZH, et al.
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Lu, J., Aarik, J. et al
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Nakayama M, Takahashi K, Hino S, et al.
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Wu N, Zhang QC, Zhu CX, et al.
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IEEE ELECTRON DEVICE LETTERS 25 (9): 631-633 SEP 2004

Kim WK, Rhee SW, Lee NI, et al.
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He G, Fang Q, Liu M, et al.
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Takahashi K, Funakubo H, Hino S, et al.
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Kim WK, Kang SW, Rhee SW
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J VAC SCI TECHNOL A 21 (5): L16-L18 SEP-OCT 2003

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MODERN PHYSICS LETTERS B 19 (26): 1303-1322 NOV 20 2005

Brown KR, Sun L, Kane BE
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AIP Conference Proceedings, Volume 1536, pp.505-506, 2013

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ADVANCED MATERIALS, Volume: 25, Issue: 1, pp.109-114, JAN 4 2013

Kim, Seong Keun; Kim, Kyung Min; Jeong, Doo Seok; et al.
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A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides
CHINESE PHYSICS LETTERS Volume: 29 Issue: 10 Article Number: 107402 DOI: 10.1088/0256-307X/29/10/107402 Published: OCT 2012

Kasamatsu, Shusuke; Tada, Tomofumi; Watanabe, Satoshi
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SOLID STATE IONICS Volume: 226 Pages: 62-70 DOI: 10.1016/j.ssi.2012.08.009 Published: OCT 15 2012

Kim, HK; Yu, IH; Lee, JH; Park, TJ; Hwang, CS
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APPLIED PHYSICS LETTERS Volume: 101 Issue: 17 Article Number: 172910 DOI: 10.1063/1.4764541 Published: OCT 22 2012

Osada, M., Sasaki, T.
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International Journal of Applied Ceramic Technology 9 (1) , pp. 29-36 2012

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Advanced Materials 24 (2) , pp. 210-228 2012

Ziani, A; Le Paven-Thivet, C; Fasquelle, D; Le Gendre, L; Benzerga, R; Tessier, F; Chevire, F; Carru, JC; Sharaiha, A
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Thin Solid Films 520 (14) , pp. 4536-4540 2012

Kojima, T; Kimura, J; Suzuki, M; Takahashi, K; Oikawa, T; Sakashita, Y; Kato, K; Watanabe, T; Takenaka, T; Yamada, T; Funakubo, H
Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure
Applied Physics Letters 101 (1) , art. no. 012907 2012

Ju Lee, H., Hyuk Park, M., Jin Kim, Y., Seong Hwang, C., Hwan Kim, J., Funakubo, H., Ishiwara, H.
Improved ferroelectric property of very thin Mn-doped BiFeO3 films by an inlaid Al2O3 tunnel switch
Journal of Applied Physics 110 (7), art. no. 074111 2011

Osada, M., Takanashi, G., Li, B.-W., Akatsuka, K., Ebina, Y., Ono, K., Funakubo, H., (...), Sasaki, T.
Controlled polarizability of one-nanometer-thick oxide nanosheets for tailored, high- nanodielectrics
Advanced Functional Materials 21 (18), pp. 3482-3487 2011

Frster, S., Huth, M., Schindler, K.-M., Widdra, W.
Epitaxial BaTiO3(100) films on Pt(100): A low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy study
Journal of Chemical Physics 135 (10), art. no. 104701 2011

Kasamatsu, S., Watanabe, S., Han, S.
Orbital-separation approach for consideration of finite electric bias within density-functional total-energy formalism
Physical Review B - Condensed Matter and Materials Physics 84 (8), art. no. 085120 2011

Tiana, L., Yuanb, S.Z., Sunc, J.L., Mengd, X.J., Wange, J.L., Yangf, J., Baig, W., Chuh, J.H.
Thickness dependence of electrical properties in poly(vinylidene fluoride trifluoroethylene) copolymer thin films
Advanced Materials Research 295-297, pp. 2049-2056 2011

Seo, M., Ho Rha, S., Keun Kim, S., Hwan Han, J., Lee, W., Han, S., Seong Hwang, C.
The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
Journal of Applied Physics 110 (2), art. no. 024105 2011

Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu
Thickness Dependence of Electrical Properties in Poly(vinylidene Fluoride Trifluoroethylene) Copolymer Thin Films
Advanced Materials Research, 295-297, pp2049 2011

Zhong, N., Shima, H., Akinaga, H.
Improvement of rectifying property in Pt/TiOx/Pt by controlling oxidization of TiOx layer
Japanese Journal of Applied Physics 50 (4 PART 2), art. no. 04DH04 2011

Tian, M., Li, M., Li, J.C.
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Physica B: Condensed Matter 406 (3), pp. 541-544 2011

Tong, S., Narayanan, M., Ma, B., Koritala, R.E., Liu, S., Balachandran, U., Shi, D.
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Acta Materialia 59 (3), pp. 1309-1316 2011

Popovici, M., Swerts, J., Tomida, K., Radisic, D., Kim, M.-S., Kaczer, B., Richard, O., Kittl, J.A.
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Physica Status Solidi - Rapid Research Letters 5 (1), pp. 19-21 2011

Yang, L., Wang, G., Dong, X., Remiens, D.
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Journal of the American Ceramic Society 93 (9), pp. 2526-2529 2010

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Japanese Journal of Applied Physics 49 (9 PART 2), art. no. 09MA01 2010

Kim, S.K., Lee, S.W., Han, J.H., Lee, B., Han, S., Hwang, C.S.
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Advanced Functional Materials 20 (18), pp. 2989-3003 2010

Osada, M., Akatsuka, K., Ebina, Y., Funakubo, H., Ono, K., Takada, K., Sasaki, T.
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Han, J.H., Lee, S.W., Kim, S.K., Han, S., Hwang, C.S., Dussarrat, C., Gatineau, J.
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Chemistry of Materials 22 (20), pp. 5700-5706 2010

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EPJ Applied Physics 48 (1), pp. 10503p1-10503p5 2009

Choi, G.-J., Kim, S.K., Han, J.H., Lee, S.W., Hwang, C.S.
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JAPANESE JOURNAL OF APPLIED PHYSICS 48 9 Part 2 Sp. Iss. SI Part 2 Sp. Iss. SI SEP 2009

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JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 9 p. 5834-5838 2009

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JOURNAL OF APPLIED PHYSICS Volume: 106 024104 2009

Jiang AQ, Lee HJ, Kim GH, et al.
The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films
ADVANCED MATERIALS Volume: 21 Issue: 28 Pages: 2870 2009

Mrovec M, Albina JM, Meyer B, et al.
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PHYSICS LETTERS A Volume: 373 Issue: 27-28 Pages: 2389-2392 2009

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ACS NANO Volume: 3 Issue: 5 Pages: 1097-1106 2009

Wu H, Zhan YG, Xing HZ, et al.
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SOLID STATE COMMUNICATIONS Volume: 149 Issue: 19-20 Pages: 802-805 2009

Stengel M, Vanderbilt D, Spaldin NA
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NATURE MATERIALS Volume: 8 Issue: 5 Pages: 392-397 2009

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JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 085302 2009

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JOURNAL OF MATERIALS CHEMISTRY 19 p.2503-2511 2009

Fei JW, Jiang AQ, Tang TA
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THIN SOLID FILMS Volume: 517 Issue: 8 Pages: 2661-2664 2009

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VACUUM Volume: 83 Issue: 6 Pages: 1018-1021 2009

Morawetz K, Lipavsky P, Mares JJ
Discontinuity of capacitance at the onset of surface superconductivity
NEW JOURNAL OF PHYSICS 11 023032 2009

Joo DK, Park JS, Kang SW
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ELECTROCHEMICAL AND SOLID STATE LETTERS 12 p.H77-H79 2009

Osada, M., Akatsuka, K., Ebina, Y., Kotani, Y., Ono, K., Funakubo, H., Ueda, S., Sasaki, T.
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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 47 (9 PART 2), pp. 7556-7560 2008

Boesch, D.S., Son, J., LeBeau, J.M., Cagnon, J., Stemmer, S.
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Applied Physics Express 1 (9), pp. 0916021-0916023 2008

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ADVANCED MATERIALS 20(8), pp.1429-+ 2008

Gao, Y.H., Sun, J.L., Ma, J.H., Meng, X.J., Chu, J.H.
Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material
Applied Physics A: Materials Science and Processing 91 (3), pp. 541-544 2008

Xia, Y., Yin, K., Xu, C., Zhang, Y., Xu, B., He, W., Meng, X., (...), Liu, Z.
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Applied Physics Letters 92 (10), art. no. 102906 2008

Lee, B., Lee, C.-K., Han, S., Lee, J., Hwang, C.S.
First-principles calculation of capacitance including interfacial effects
Journal of Applied Physics 103 (2), art. no. 024106 2008

Lee, B., Han, S., Lee, J.
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Journal of the Korean Physical Society 52 (1), pp. 70-74 2008

Jiang, A.Q., Lin, Y.Y., Tang, T.A.
Evaluation of interfacial-layer capacitance from fast polarization retention in ferroelectric thin films
Journal of Applied Physics 101 (5), art. no. 056103 2007

Hong, X.K., Hu, G.J., Chen, J., Chu, J.H., Dai, N.
Structural and electric properties of sol-gel-derived Ba 0.9Sr0.1TiO3 multilayers
Journal of the American Ceramic Society 90 (4), pp. 1280-1282 2007

Panda, B., Roy, A., Dhar, A., Ray, S.K.
Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films
Journal of Applied Physics 101 (6), art. no. 064116 2007

Kim, S.K., Lee, S.Y., Seo, M., Choi, G.-J., Hwang, C.S.
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Journal of Applied Physics 102 (2), art. no. 024109 2007

Jiang, A.Q., Lin, Y.Y., Tang, T.A.
The growth of interfacial passive layers under thermal passivation of integrated Pb (Zr,Ti) O3 thin films
Journal of Applied Physics 102 (7), art. no. 074118 2007

Osada, M., Akatsuka, K., Ebina, Y., Funakubo, H., Kiguchi, T., Takada, K., Sasaki, T.
Solution-based fabrication of high- dielectric nanofilms using titania nanosheets as a building block
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (10 B), pp. 6979-6983 2007

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JOURNAL OF ELECTROCERAMICS Volume: 17 Pages: 141-144 2006

Kim J, Pak J, Nam K, et al.
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MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 130 (1-3): 237-245 JUN 15 2006

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APPLIED PHYSICS LETTERS 88 (7): Art. No. 072909 FEB 13 2006

Tang, X.G., Liu, Q.X., Jiang, Y.P. et al
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Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials Volume: 186 p.51 Published: 2005

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APPLIED PHYSICS LETTERS 85 (22): 5313-5315 NOV 29 2004

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APPLIED PHYSICS LETTERS 85 (18): 4112-4114 NOV 1 2004

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PHYS STATUS SOLIDI B 241 (5): 1141-1148 APR 2004

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APPL PHYS LETT 83 (24): 5011-5013 DEC 15 2003

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78. Seung-Hyun Kim, D-Y. Park, H-J. Woo, D-S. Lee, J. Ha and Cheol Seong Hwang, "The effects of IrO2/Pt hybrid electrodes on the crystallization and ferroelectric performances of Pb(Zr,Ti)O3 thin film capacitors", J. Mater. Res., 17, 1735 (2002) July [4]

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Lee C, Hwang CS, Kim HJ
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Lim JW, Yun SJ, Lee JH
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JPN J APPL PHYS 1 42 (12): 7424-7427 DEC 2003

Chu, M.-W., Ganne, M., Caldes, M.T.
X-ray photoemission spectroscopy characterization of the electrode-ferroelectric interfaces in Pt/Bi4Ti3O 12/Pt and Pt/Bi3.25La0.75Ti3O 12/Pt capacitors: Possible influence of defect structure on fatigue properties
Physical Review B - Condensed Matter and Materials Physics 68 (1), art. no. 014102, pp. 141021-1410211 2003

81. Jae Kyeong Jeong, Cheol Seong Hwang and Hyeong Joon Kim,"Low temperature 4H-SiC epitaxial growth on 4H-SiC (112̄0) and (11̄00) faces by organometallic chemical vapor deposition" J. Electrochem. Soc., 149(9), G526 (2002) September [7]

Mukherjee M, Mazumder N
Effects of Charge Bump on High-Frequency Characteristics of alpha-SiC-based Double-drift ATT Diodes at Millimeter-wave Window Frequencies
IETE JOURNAL OF RESEARCH Volume: 55 Issue: 3 Pages: 118-127 2009

Song, H.K., Kwon, S.Y., Moon, J.H., Seo, H.S., Yim, J.H., Lee, J.H., Kim, H.J.
Homoepitaxial growth of vanadium-doped semi-insulating 4H-SiC using bis-trimethylsilylmethane and bis-cyclopentadienylvanadium precursors
Journal of the Electrochemical Society 155 (1), pp. H11-H16 2008

Song, H.K., Seo, H.S., Kwon, S.Y., Moon, J.H., Yim, J.H., Lee, J.H., Kim, H.J.
Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates
Journal of Crystal Growth 305 (1), pp. 83-87 2007

Bishop, S.M., Reynolds Jr., C.L., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., Park, M., Davis, R.F.
Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [112̄0]- and [0001]-oriented silicon carbide substrates
Journal of Electronic Materials 36 (4), pp. 285-296 2007

Hatayama T, Yano H, Uraoka Y, et al.
High purity SiC epitaxial growth by chemical vapor deposition using CH3SiH3 and C3H8 sources
Silicon Carbide and Related Materials 2005, Pts 1 and 2 (MATERIALS SCIENCE FORUM) Volume: 527-529 Pages: 203-206 2006

Virojanadara C, Johansson LI
Photoemission study of Si-rich 4H-SiC surfaces and initial SiO2/SiC interface formation
PHYSICAL REVIEW B 71 (19): Art. No. 195335 MAY 2005

Jeong JK, Song HK, Um MY, et al.
Characterization of undoped and nitrogen-doped 4H-SiC thin films by CVD from bis(trimethylsilylmethane) precursor
J ELECTROCHEM SOC 151 (4): G252-G256 2004

82. Seung-Hyun Kim*, D-Y. Park, H-J. Woo, D-S. Lee, and J. Ha, Cheol Seong Hwang, I-B. Shim, and A. I. Kingon, "Orientation effects in chemical solution derived PZT thin films on ferroelectric properties" Thin solid films, 416, 264 (2002) September [40]

Zhang, Y.a , Pan, F.a , Bao, D.-Q.a , Wang, J.-Y.ab , Guo, H.ab
Growth and characterization of lead zirconate titanate (PZT) thin films
Guangxue Jingmi Gongcheng/Optics and Precision Engineering, Volume 21, Issue 11, pp.2893-2899, November 2013

Vorotilov, K.a , Sigov, A.a, Seregin, D.a, Podgorny, Y.a, Zhigalina, O.b, Khmelenin, D.b
Crystallization behaviour of PZT in multilayer heterostructures
Phase Transitions Volume 86, Issue 11, pp.1152-11651, November 2013

Murakoshi, K., Fukamachi, K., Sakamoto, N., (...), Wakiya, N., Suzuki, H.
Stress state analysis of stress engineered BaTiO3 thin film by LaNiO3 bottom electrode
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, 2013

Hwang, Sung-Yeon; Son, Young-Jin; Cho, Sung-Sil; et al.
Electrical properties of Pb(Zr,Ti)O-3 ferroelectric capacitor on TiN/W plug structure
Integrated Ferroelectrics 89 (1) , pp. 69-76, 2007

Murakoshi, K., Fukamachi, K., Sakamoto, N., Ohno, T., Kiguchi, T., Matsuda, T., Konno, T., (...), Suzuki, H.
Stress state analysis of stress engineered BaTiO3 thin film by LaNiO3 bottom electrode
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan , 2013

Kwak, J., Kingon, A.I., Kim, S.-H.
Lead-free (Na 0.5,K 0.5)NbO 3 thin films for the implantable piezoelectric medical sensor applications
Materials Letters 82 , pp. 130-132 2012

Fukamachi, K., Sakamoto, N., Ohno, T., Fu, D., Wakiya, N., Matsuda, T., Suzuki, H.
Effect of stress engineering on the electrical properties of BaTiO 3 thin film
Japanese Journal of Applied Physics 50 (9 PART 3), art. no. 09NA03 2011

D. Chateigner and J. Ricote
Quantitative Texture Analysis of Polycrystalline Ferroelectrics
Multifunctional Polycrystalline Ferroelectric Materials: Springer Series in Materials Science, 2011, Volume 140, 347-408, DOI: 10.1007/978-90-481-2875-4_8 2011

Li L, Zhu J, Luo WB, et al.
Improved Ferroelectric Properties of (111)-Oriented PbZr0.52Ti0.48O3 Thin Films on SrRuO3/Pt Hybrid Electrodes
Source: FERROELECTRICS Volume: 406 Pages: 121-129 Published: 2010

Li, L., Zhu, J., Luo, W.
Epitaxial growth of lead zirconate titanate films on GaN substrate with TiO2 buffer layer
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology 2010

Ambika D, Kumar V, Imai H, et al.
Sol-gel deposition and piezoelectric properties of {110}-oriented Pb(Zr0.52Ti0.48)O-3 thin films
APPLIED PHYSICS LETTERS 96 3 JAN 18 2010

Hao XH, Zhai JW, Yang JC, et al.
Improved field-induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 3 7-8 248-250 OCT 2009

Park JH, Yoon SH, Shen D, et al.
Effects of preferred orientation on the piezoelectric properties of Pt/Pb(Zr0.3Ti0.7)O-3/Pt thin films grown by sol-gel process
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 20 Issue: 4 Pages: 366-373 2009

Jeong, Y.-S., Lee, H.-U., Lee, S.-A., Kim, J.-P., Kim, H.-G., Jeong, S.-Y., Cho, C.-R.
Annealing effect of platinum-based electrodes on physical properties of PZT thin films
Current Applied Physics 9 (1), pp. 115-119, 2009

Schneller, T., Kohlstedt, H., Petraru, A., Waser, R., Guo, J., Denlinger, J., Learmonth, T., (...), Smith, K.E.
Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr0.3Ti0.7)O3 thin films by soft X-ray absorption and soft X-ray emission spectroscopy
Journal of Sol-Gel Science and Technology 48 (1-2), pp. 239-252, 2008

Wu, J., Zhu, J., Xiao, D., Zhu, J., Tan, J., Zhang, Q.
Effect of crystallization orientation on the domain and ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 thin films by radio frequency magnetron sputtering technique
Thin Solid Films 517 (2), pp. 1005-1008, 2008

Malic B, Mandeljc M, Drazic G, et al.
STRATEGY FOR LOW-TEMPERATURE CRYSTALLIZATION OF TITANIUM-RICH PZT THIN FILMS BY CHEMICAL SOLUTION DEPOSITION
INTEGRATED FERROELECTRICS, 100, 285-296, 2008

Thoumtom, S., Rujijanagul, G., Tontrakoon, J., Tunkasiri, T.
Effect of pre-heating temperature on the characteristics of solgel derived lead zirconate titanate films
Surface Review and Letters 15 (1-2), pp. 65-70 2008

Xiong, S., Kawada, H., Yamanaka, H., Matsushima, T.
Piezoelectric properties of PZT films prepared by the sol-gel method and their application in MEMS
Thin Solid Films 516 (16), pp. 5309-5312 2008

Menou N, Funakubo H
Preparation of (111)-oriented SrRuO3/Pt electrodes for Pb(Zr,Ti)O-3-based ferroelectric capacitors: Grain size and roughness impact
JAPANESE JOURNAL OF APPLIED PHYSICS 47(2), pp.1003-1007 Part1 2008

Menou N, Funakubo H
(111)-oriented Pb(Zr,Ti)O-3 films deposited on SrRuO3/Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability
JOURNAL OF APPLIED PHYSICS 102 (11) art. no. 114105 2007

Kuwabara, H., Menou, N., Funakubo, H.
Strain and in-plane orientation effects on the ferroelectricity of (111)-oriented tetragonal Pb (Zr0.35 Ti0.65) O3 thin films prepared by metal organic chemical vapor deposition
Applied Physics Letters 90 (22), art. no. 222901 2007

Schneller, T., Waser, R.
Chemical modifications of Pb(Zr0.3,Ti0.7)O 3 precursor solutions and their influence on the morphological and electrical properties of the resulting thin films
Journal of Sol-Gel Science and Technology 42 (3), pp. 337-352 2007

Menou, N., Kuwabara, H., Funakubo, H.
Impact of (111)-oriented SrRuO3/Pt tailored electrode for highly reproducible preparation of metal organic chemical vapour deposited Pb(Zr,Ti)O3 films for high density ferroelectric random access memory applications
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (4 B), pp. 2139-2142 2007

Liu, M., Wang, J., Wang, L., Cui, T.
Deposition and characterization of Pb(Zr,Ti)O3 sol-gel thin films for piezoelectric cantilever beams
Smart Materials and Structures 16 (1), art. no. 011, pp. 93-99 2007

Sekhar PK, Akella S, Bhansali S
A low loss flexural plate wave (FPW) device through enhanced properties of sol-gel PZT (52/48) thin film and stable TiN-Pt bottom electrode
SENSORS AND ACTUATORS A-PHYSICAL 132 (1): 376-384 Sp. Iss. SI NOV 8 2006

Idemoto Y, Yoshida S, Ui K, et al.
Preparation of Pb-Zr-Ti-Nb-Si-O ferroelectric thick film by electrophoretic deposition
ELECTROCHEMISTRY 74 (11): 883-889 NOV 2006

Escote MT, Pontes FM, Leite ER, et al.
Textured PbZr0.3Ti0.7O3 thin films produced by polymeric precursor method using microwave oven
FERROELECTRICS 335: 211-218 2006

Zhong CW, Peng JG, Zhang SR, et al.
Fabrication of PZT thin films with TiOx buffer layers by RF magnetron sputtering
INTEGRATED FERROELECTRICS 80: 281-288 2006

Zheng FG, Chen JP, Li XW
Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O-3 films produced by sol-gel method
ACTA PHYSICA SINICA 55 (6): 3067-3072 JUN 2006

Guo Y, Suzuki K, Nishizawa K, et al.
Thickness dependence of electrical properties of highly (100)-oriented BaTiO3 thin films prepared by one-step chemical solution deposition
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 (2A): 855-859 FEB 2006

Desfeux R, Legrand C, Da Costa A, et al.
Correlation between local hysteresis and crystallite orientation in PZT thin films deposited on Si and MgO substrates
SURFACE SCIENCE 600 (1): 219-228 JAN 1 2006

Zhong CW, Wang HB, Peng JG, et al.
Investigation on Pb(Zr0.3Ti0.7) O-3 pyroelectric thin film materials
JOURNAL OF INFRARED AND MILLIMETER WAVES 24 (6): 405-408 DEC 2005

Du, W., Lu, W., Cheng, J. et al
Thickness effect of LaNiO3 buffer layer on microstructure and electrical properties of PZT thin films
Proceedings of SPIE - The International Society for Optical Engineering 5774, pp. 241-245 2005

Malic B, Cilensek J, Mandeljc M, et al.
Crystallization study of the alkoxide-based Pb(Zr0.30Ti0.70)O-3 thin-film precursor
ACTA CHIMICA SLOVENICA 52 (3): 259-263 2005

Nishida K, Shirakata K, Osada M, et al.
Preparation and characterization of ultra-thin ferroelectric PZT films grown by plasma-assisted CVD
JOURNAL OF CRYSTAL GROWTH 272 (1-4): 789-794 DEC 10 2004

Souza ECF, Simoes AZ, Cilense M, et al.
The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors
MATERIALS CHEMISTRY AND PHYSICS 88 (1): 155-159 NOV 15 2004

Yang JS, Kim SH, Yeom JH, et al.
Piezoelectric and pyroelectric properties of Pb(Zr,Ti)O-3 films for micro-sensors and actuators
INTEGR FERROELECTR 54: 515-525 2003

Yang JS, Kim SH, Park DY, et al.
Thickness effects on the pyroelectric properties of chemical-solution-derived Pb(Zr-0.3,Ti-0.7)O-3 thin films for the infra-red sensor devices
JPN J APPL PHYS 1 42 (9B): 5956-5959 SEP 2003

Bao DH, Yao X, Shinozaki K, et al.
Growth and electrical properties of Pb(Zr,Ti)O-3 thin films by a chemical solution deposition method using zirconyl heptanoate as zirconium source
J CRYST GROWTH 259 (4): 352-357 DEC 2003

83. Cheol Seong Hwang, Sang Yong No, Jaehoo Park, Hyeong Joon Kim, Ho Jin Cho, Young Ki Han, and Ki Young Oh "Cation composition control of MOCVD (Ba,Sr) TiO3 thin films along the capacitor hole", J. Electrochem. Soc. 149(10), G585-G592 (2002) 10 [31]

Jung, Kyubong; Zhao, Yu; Momose, Takeshi; et al.
Ethanol-Assisted Flow-Type Supercritical Fluid Deposition of SrRuO3 for Stoichiometric Film Formation
ECS SOLID STATE LETTERS, Volume: 2, Issue: 9, pp.P70-P72, 2013

Lee, S.W., Han, J.H., Han, S., Lee, W., Jang, J.H., Seo, M., Kim, S.K., (...), Hwang, C.S.
Atomic layer deposition of SrTiO3 thin films with highly enhanced growth rate for ultrahigh density capacitors
Chemistry of Materials 23 (8), pp. 2227-2236 2011

Kim, S.K., Lee, S.W., Han, J.H., Lee, B., Han, S., Hwang, C.S.
Capacitors with an equivalent oxide thickness of <0.5 nm for nanoscale electronic semiconductor memory
Advanced Functional Materials 2010

Park TJ, Kim JH, Jang JH, et al.
Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 156 Issue: 9 Pages: G129-G133 2009

Lee JH, Son JY, Lee HBR, et al.
Supercritical Fluid Deposition of Conformal SrTiO3 Films with Composition Uniformity in Nanocontact Holes
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 12 Issue: 5 Pages: D45-D47 2009

Kondo T, Funakubo H, Akiyama K, et al.
Deposition of undoped indium oxide thin films on stripe-patterned substrates by spray CVD
JOURNAL OF CRYSTAL GROWTH Volume: 311 Issue: 3 Pages: 642-646 2009

Watanabe, T., Hoffmann-Eifert, S., Hwang, C.S., Waser, R.
Growth behavior of atomic-layer-deposited Pb(Zr,Ti)Ox thin films on planar substrate and three-dimensional hole structures
Journal of the Electrochemical Society 155 (11), pp. D715-D722, 2008

Kondo, T., Sawada, Y., Akiyama, K., Funakubo, H., Kiguchi, T., Seki, S., Wang, M.H., Uchida, T.
Step coverage study of indium-tin-oxide thin films by spray CVD on non-flat substrates at different temperatures
Thin Solid Films 516 (17), pp. 5864-5867 2008

Kim, K.-C., Cho, K., Lee, K., Kim, Y., Choi, J.H., Lim, J.-S., Kim, J.Y., (...), Han, W.
Evaluation of novel Sr precursors for Atomic Layer Deposition of SrO thin film
ECS Transactions 11 (7), pp. 131-136 2007

Watanabe, T., Hoffmann-Eifert, S., Peter, F., Mi, S., Jia, C., Hwang, C.S., Waser, R.
Liquid injection ALD of Pb (Zr,Ti) Ox thin films by a combination of self-regulating component oxide processes
Journal of the Electrochemical Society 154 (12), pp. G262-G269 2007

Hwang, G.W., Kim, W.D., Hwang, C.S., Min, Y.-S., Cho, Y.J.
Atomic layer deposition of bi1-x-y tix siy Oz Thin Films Using H2 O oxidant and their characteristics depending on si content
Journal of the Electrochemical Society 154 (11), pp. H915-H918 2007

Kwon, O.S., Lee, S.W., Han, J.H., Hwang, C.S.
Atomic layer deposition and electrical properties of SrTi O3 thin films grown using Sr (C11 H19 O2) 2, Ti (Oi- C3 H7) 4, and H2 O
Journal of the Electrochemical Society 154 (6), pp. 127-133 2007

Watanabe, T., Hoffmann-Eifert, S., Yang, L., Rudiger, A., Kugeler, C., Hwang, C.S., Waser, R.
Liquid injection atomic layer deposition of Ti Ox films using Ti [OCH (C H3) 2] 4
Journal of the Electrochemical Society 154 (6), pp. 134-140 2007

Watanabe, T., Hoffmann-Eifert, S., Mi, S., Jia, C., Waser, R., Hwang, C.S.
Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions
Journal of Applied Physics 101 (1), art. no. 014114 2007

Shin, S., Koo, J.-M., Kim, S., Chung, Y.S., Choi, C.-J., Lee, J.H., Park, Y., (...), Lee, J.K.
Metal-organic chemical vapor deposition of PbZrxTi 1-xO3 thin films on ir-ru alloy electrodes
Chemistry of Materials 23 (8), pp. 2227-2236 2006

Watanabe, T., Hoffmann-Eifert, S., Hwang, C.S., Waser, R.
Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films
Journal of the Electrochemical Society 153 (9), pp. F199-F204 2006

Ehrhart, P., Thomas, R.
Electrical properties of (Ba,Sr) TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes
Journal of Applied Physics 99 (11), art. no. 114108 2006

Hwang GW, Kim WD, Min YS, et al.
Characteristics of amorphous Bi2Ti2O7 thin films grown by atomic layer deposition for memory capacitor applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (1): F20-F26 2006

Nagai A, Minamidate J, Asano G, et al.
Conformality of Pb(Zr, Ti)O-3 films deposited on trench structures having submicrometer diameter and various aspect ratios
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (1): C15-C18 2006

Kim WD, Hwang GW, Kwon OS, et al.
Growth characteristics of atomic layer deposited TiO2 thin films on Ru and Si electrodes for memory capacitor applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (8): C552-C559 2005

No SY, Oh JH, Jeon CB, et al.
Study on the step coverage of metallorganic chemical vapor deposited TiO2 and SrTiO3 thin films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (6): C435-C441 2005

Kwon, O.S., Kim, S.K., Cho, M., Hwang, C.S., Jeong, J.
Chemically conformal ALD of SrTiO3 thin films using conventional metallorganic precursors
Journal of the Electrochemical Society 152 (4), pp. C229-C236 2005

Min YS, Cho YJ, Asanov IP, et al.
Bi1-x-yTixSiyOz (BTSO) thin films for dynamic random access memory capacitor applications
CHEMICAL VAPOR DEPOSITION 11 (1): 38-43 JAN 2005

Min YS, Cho YJ, Hwang CS
Amorphous high k dielectric Bi1-x-yTixSiyOz thin films by ALD
ELECTROCHEMICAL AND SOLID STATE LETTERS 7 (12): F85-F88 2004

Nagai A, Morioka H, Asano G, et al.
Comparison of the ferroelectricity for 70-80 nm thick Pb(ZrTi)O-3 films deposited on (111)Ir bottom electrodes at different temperatures by MOCVD
INTEGRATED FERROELECTRICS 68: 147-154 2004

Kim, S.K., Kim, W.-D., Kim, K.-M., Hwang, C.S., Jeong, J.
High dielectric constant TiO2 thin films on a Ru electrode grown at 250C by atomic-layer deposition
Applied Physics Letters 85 (18), pp. 4112-4114 2004

Nakamura, T., Nishimura, T., Momose, S., Tachibana, K.
In situ infrared spectroscopic study on a titanium source in MOCVD
Journal of the Electrochemical Society 151 (10), pp. C605-C609 2004

Nakamura T, Nishimura T, Tachibana K
Thermal decomposition mechanism of a titanium source, Ti-(MPD)-(METHD)(2), in MOCVD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 151 (12): C806-C810 2004

Zhao JS, Park DY, Seo MJ, et al.
Metallorganic CVD of high-quality PZT thin films at low temperature with new Zr and Ti precursors having MMP ligands
J ELECTROCHEM SOC 151 (5): C283-C291 2004

Jeong SW, Shi-Zhao J, Kim HR, et al.
MOCVD of PZT thin films with different precursor solutions for testing mass-production compatibility
J ELECTROCHEM SOC 150 (10): C678-C687 OCT 2003

Nishimura, T., Nakamura, T., Tachibana, K.
Reaction mechanism of a titanium source, Ti(MPD)(METHD)2, in metalorganic chemical vapor deposition of (Ba,Sr)TiO3 films
Proceedings - Electrochemical Society 22, pp. 461-468 2003

84. Ji-Eun Lim, Dong-Yeon Park, Jae Kyeong Jeong, Gregor Darlinski, Hyeong Joon Kim, Cheol Seong Hwang, Seung-Hyun Kim, Chang-Young Koo, Hyun-Jung Woo, Dong-Su Lee and Jowoong Ha, "Dependence of ferroelectric performance of sol-gel-derived Pb(Zr,Ti)O 3 thin films on bottom-Pt-electrode thickness" Appl. Phys. Lett. 81, 3224 (2002)-October [15]

Alkoy, E.M., Alkoy, S., Shiosaki, T.
The effect of substrate and processing conditions on the properties of sol-gel derived Pb(Zr,Ti)O 3 thin films
International Journal of Surface Science and Engineering 6 (1-2) , pp. 24-34 2012

Ramos-Moore, E., Ferrari, P., Diaz-Droguett, D.E., Lederman, D., Evans, J.T.
Raman and x-ray photoelectron spectroscopy study of ferroelectric switching in Pb(Nb,Zr,Ti)O 3 thin films
Journal of Applied Physics 111 (1) , art. no. 014108 2012

Hong SK, Son YJ, Kim YJ, et al.
Dry Etching of a Pb(Zr,Ti)O-3 Capacitor Module with a TiN Hard Mask in an O-2/Cl-2 Plasma
JOURNAL OF THE KOREAN PHYSICAL SOCIETY Volume: 55 Pages: 869-873 2009

Wang MX, Shu Q, Mu ZC, et al.
Dielectric and pyroelectric characteristics of the infrared sensitive (Pb1-x Sr (x) )TiO3 ceramics
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION Volume: 24 Issue: 3 Pages: 448-450 2009

Izyumskaya N, Alivov Y, Cho SJ, et al.
Processing, structure, properties, and applications of PZT thin films
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES 32(3-4), pp.111-202 2007

Maoxiang Wang, Qing Shu, Zhichun Mu and Yuliang Jian
Dielectric and pyroelectric characteristics of the infrared sensitive (Pb1−xSrx)TiO3 ceramics
Journal of Wuhan University of Technology--Materials Science Edition Volume 24, Number 3, 448-450, DOI: 10.1007/s11595-009-3448-7 2007

Kim JK, Kim SS, Park MH, Kim JW, Choi EJ, Ha TG, Cho HK, Guo R, Bhalla AS
Effects of annealing temperature on the electrical properties of Cr-substituted BiFeO3 thin films
FERROELECTRICS 2007

Jia Z, Liu TZ, Hu H, et al.
Imprint and fatigue properties of Pt/Pb(Zr0.4Ti0.6)O-3/Pt capacitor
INTEGRATED FERROELECTRICS 85, pp.67-75 2006

Hu H, Jia Z, Liu TZ, et al.
Fabrication and properties of Ru/Pb(Zr0.4Ti0.6)O-3/Pt capacitor
INTEGRATED FERROELECTRICS 84, pp.219-225 2006

Jia Z, Ren TL, Zhang ZG, et al.
Pt/Pb(Zr,Ti)O-3/Pt capacitor with excellent fatigue properties prepared by sol-gel process applied to FeRAM
JOURNAL OF PHYSICS D-APPLIED PHYSICS 39 (12): 2587-2591 JUN 21 2006

Jia Z, Ren TL, Liu TZ, et al.
Comparison of properties of Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors
CHINESE PHYSICS LETTERS 23 (4): 1042-1045 APR 2006

Cao JL, Solbach A, Klemradt U, et al.
Effects of thermal annealing on the structure of ferroelectric thin films
JOURNAL OF THE AMERICAN CERAMIC SOCIETY 89 (4): 1321-1325 APR 2006

Lim JE, Jeong JK, Ahn KH, et al.
Microstructural characterization of sputter-deposited Pt thin film electrode
JOURNAL OF MATERIALS RESEARCH 19 (2): 460-468 FEB 2004

Gong W, Li JF, Chu XC, et al.
Preparation and characterization of sol-gel derived (100)-textured Pb(Zr,Ti)O-3 thin films: PbO seeding role in the formation of preferential orientation
ACTA MATER 52 (9): 2787-2793 MAY 17 2004

Bdikin, I.K., Shvartsman, V.V., Kholkin, A.L et al
Ferroelectric domain structure and local piezoelectric properties of sol-gel derived Pb(Zr1-xTix)O3 films
Materials Research Society Symposium - Proceedings 784, pp. 55-60 2003

85. Moonju Cho, Jaehoo Park, Hong Bae Park, Cheol Seong Hwang, Jaehack Jeong, Kwang Soo Hyun, Young Wuk Kim, Chang-bong Oh, and Hee Sung Kang, "Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate" Appl. Phys. Lett., 81, 3630 (2002) Nov. [24]

Park, T.J.ab, Cho, M.ac, Jung, H.-S.a, Hwang, C.S.a
Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate
High-k Gate Dielectrics for CMOS Technology, pp.77-110, 23 August 2012

Kim, Sung-Kyu; Lee, B. H.; Park, C. G.
SIMS analytical technique for N profile in SiON/SiN/Si
SURFACE AND INTERFACE ANALYSIS Volume: 44 Issue: 11-12 Special Issue: SI Pages: 1488-1491 DOI: 10.1002/sia.4983 Published: NOV-DEC 2012

Jin, CG; Yu, T; Bo, Y; Zhao, Y; Zhang, HY; Dong, YJ; Wu, XM; Zhuge, LJ; Ge, SB
Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition
Vacuum 86 (8) , pp. 1078-1082 2012

Park TJ, Kim JH, Jang JH, et al.
Optimized Electrical Properties and Chemical Structures of SrTiO3 Thin Films on Si Using Various Interfacial Barrier Layers
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157 10 G216-G220 2010

Jung HS, Kim HK, Kim JH, et al.
Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfOxNy Gate Dielectrics
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157 5 G121-G126 2010

Park TJ, Kim JH, Jang JH, et al.
Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 156 Pages: G129-G133 2009

Katamreddy, R., Inman, R., Jursich, G., Soulet, A., Takoudis, C.
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Thin Solid Films 516 (23), pp. 8498-8506 2008

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88. Dong-Su Lee, Hyun-Jung Woo, Dong-Yeon Park, Jowoong Ha, Cheol Seong Hwang and Euijoon Yoon, "Effects of The Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer", J. J. Appl. Phys., 42 part 1, 2A, 630, (2003) - Feb. [1]

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Li, W., Hao, H.
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Pan, F., Luo, J., Yang, Y., Wang, X., Zeng, F.
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Zhang, S-L., Cho, B.-H., Yu, J.-B., Lim, J.-O., Byun, H.-G., Huh, J.-S.
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Yau, W.-H., Tseng, P.-C., Lian, D.
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Liu Gang; Zhu Jia-Qi; Wang Sai; et al.
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Lee Tae Yong; Song Joon Tae
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THIN SOLID FILMS 518 (22) SEP 1 2010

Yau, W.-H., Tseng, P.-C., Lian, D.
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Zhang Shao-Lin; Cho Bong-Hwan; Yu Joon-Boo; et al.
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Wei, Mian; Xiong, Mingke; Wu, I-Tsang; Wang, Jing
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Sharma SP, Ting JM, Chang ZK
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Uthirakumar P, Hong CH
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SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES Volume: 52 Pages: 2779-2784 2009

Muller A, Konstantinidis G, Neculoiu D, et al.
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Yahia, S.B., Znaidi, L., Kanaev, A., Petitet, J.P.
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Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy 71 (4), pp. 1234-1238 2008

Bai, W., Zhu, X., Zhu, Z., Chu, J.
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Yu, C., Yu, Q., Gao, C., Yang, H., Liu, B., Peng, G., Han, Y., (...), Zou, G.
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Wang, Y., Chu, B., He, Q.
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Wang, Y.Z., Chu, B.
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Mortet, V., Williams, O.A., Haenen, K.
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Noeth, A., Yamada, T., Sherman, V.O., Muralt, P., Tagantsev, A.K., Setter, N.
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Neculoiu, D., Vasilache, D., Konstantinidis, G., Morosanu, C., Stavrinidis, A., Kostopoulos, A., Cismaru, A., (...), Muller, A.
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Noeth, A., Yamada, T., Sherman, V.O., Muralt, P., Tagantsev, A.K., Setter, N.
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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 54 (12), art. no. 4430029, pp. 2487-2491 2007

Yu, Q., Fu, W., Yu, C., Yang, H., Wei, R., Sui, Y., Liu, S., (...), Zou, G.
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Kang, S.J., Joung, Y.H.
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Zaatar, Y., Al Asmar, R., Podlecki, J., Youssef, S., Abdallah, M., Ouaini, N., Foucaran, A.
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Microelectronics Journal 38 (4-5), pp. 538-546 2007

Uma, K., Rusop, M., Soga, T., Jimbo, T.
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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (1), pp. 40-44 2007

Yu, K., Jin, Z., Liu, X., Zhao, J. et al
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Muller, A., Neculoiu, D., Vasilache, D. et al
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Superlattices and Microstructures 40 (4-6 SPEC. ISS.), pp. 426-431 2006

Yu K, Zheng-Guo J, Liu XX, et al.
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CHINESE JOURNAL OF INORGANIC CHEMISTRY 22 (11): 2065-2069 NOV 2006

Al Asmar R, Atanas JP, Zaatar Y, et al.
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MICROELECTRONICS JOURNAL 37 (10): 1080-1085 OCT 2006

Al Asmar R, Zaouk D, Bahouth P, et al.
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Atanas JP, Al Asmar R, Khoury A, et al.
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Kim GH, Ahn BD, Kang HS, et al.
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Kim EK, Lee TY, Hwang HS, et al.
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ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (3): C58-C61 2006

Mendoza-Galvan A, Trejo-Cruz C, Lee J, et al.
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Kim EK, Lee TY, Jeong YH, et al.
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Al Asmar R, Ferblantier G, Sauvajol JL, et al.
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Ferblantier G, Mailly F, Al Asmar R, et al.
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Al Asmar, R., Ferblantier, G., Mailly, F. et al
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Physica Status Solidi C: Conferences 2 (4), pp. 1331-1335 2005

Al Asmar, R., Ferblantier, G., Mailly, F. et al
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Asmar RA, Atanas JP, Ajaka M, et al.
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JOURNAL OF CRYSTAL GROWTH 279 (3-4): 394-402 JUN 1 2005

Jeong SH, Park BN, Lee SB, et al.
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Zhang T, Wang Y, Liu WL, et al.
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CHINESE PHYSICS LETTERS 22 (3): 694-696 MAR 2005

Al Asmar R, Juillaguet S, Ramonda M, et al.
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JOURNAL OF CRYSTAL GROWTH 275 (3-4): 512-520 MAR 1 2005

Wang Z, Qian XF, Yin J, et al.
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LANGMUIR 20 (8): 3441-3448 APR 13 2004

Kim, D.-Y., Cho, D.-H., Kim, B.-H. et al
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Proceedings - IEEE Ultrasonics Symposium 2, pp. 1375-1378 2004

94. Hong Bae Park, Moonju Cho, Jaehoo Park, Cheol Seong Hwnag, Jong-Cheol Lee and Se-Jung Oh, "Effects of plasma nitridation of Al2O3 interlayer on thermal stability, fixed charge density and interfacial trap states of HfO2 gate dielectric films grown by atomic layer deposition", J. Appl. Phys., 94, 1898 (2003). August [14]

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Kang Hee-Sung, Reddy M. Siva Pratap, Kim Dong-Seok, et al.
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JOURNAL OF PHYSICS D-APPLIED PHYSICS 46 (15), 155101 APR 17 2013

Bellandi, E., Del Vitto, A., Nale, A.C., Piagge, R., Caniatti, M., Alessandri, M.
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Microelectronic Engineering 85 (12), pp. 2406-2410 2008

Hasan, M., Park, H., Lee, J.-M., Hwang, H.
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Electrochemical and Solid-State Letters 11 (5), pp. H124-H126 2008

Lee D, Suh D, Pae Y, et al
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2007

Chen, P., Klein, T.M.
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Materials Research Society Symposium Proceedings 843, pp. 203-208 2005

Jeong DS, Hwang CS
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Lee C, No SY, Eom NI, et al.
The electrical and physical analysis of Pt gate/Al2O3/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low-power and high reliability
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Cho M, Park HB, Park J, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (5): F49-F53 2005

Lee C, Choi J, Cho M, et al.
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22 (4): 1838-1843 JUL-AUG 2004

Kim SK, Hwang CS
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Lee C, Choi J, Cho M, et al.
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Park HB, Cho MJ, Park J, et al.
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Cho MJ, Park HB, Park J, et al.
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Japanese Journal of Applied Physics 53 (1), 014001 January 2014

Henkel K., Gargouri H., Gruska B.,et al.
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Haeberle Joerg, Henkel Karsten, Gargouri Hassan, et al.
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Dou, YN; He, Y; Huang, CY; Zhou, CL; Ma, XG; Chen, R; Chu, JH
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 109 Issue: 3 Pages: 673-677 DOI: 10.1007/s00339-012-7097-x Published: NOV 2012

Shen, J., Zhang, C.Y., Xu, T.T., Jiang, A.N., Zhang, Z.Y., Wang, S., Chen, Q.
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Thin Solid Films 519 (22), pp. 7723-7726 2011

Kaichev V. V.; Dubinin Yu V.; Smirnova T. P.; et al.
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JOURNAL OF STRUCTURAL CHEMISTRY 52 (3) 480-487 JUN 2011

Dong Lei, Xuegong Yu, Lihui Song, Xin Gu, Genhu Li, and Deren Yang
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Wang, J.-C., Chou, P.-C., Lai, C.-S., Lin, J.-Y., Chang, W.-C., Lu, H.-C., Wu, C.-I., Wang, P.-S.
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Journal of the Electrochemical Society 158 (5), pp. H502-H505 2011

Moon, J.H., Yim, J.H., Seo, H.S., Lee, D.H., Kim, C.H., Kim, H.J., Cheong, K.Y., Kim, N.-K, et al.
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Applied Physics Letters 96 (12), art. no. 122108 2010

Tien, T.-C., Lin, L.-C., Lee, L.-S., Hwang, C.-J., Maikap, S., Shulga, Y.M.
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Seo, M.Y., Cho, E.N., Kim, C.E., Moon, P., Yun, I.
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INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings , art. no. 5424657, pp. 238-239 2010

Choe M, Jo G, Maeng J, et al.
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Vitanov P, Harizanova A, Ivanova T, et al.
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THIN SOLID FILMS 517 23 6327-6330 OCT 1 2009

Matsunouchi K, Komatsu N, Kimura C, et al.
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APPLIED SURFACE SCIENCE Volume: 255 Issue: 9 Pages: 5021-5024 2009

Gao LG, Yin KB, Xia YD, et al.
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JOURNAL OF PHYSICS D-APPLIED PHYSICS 42 015306 2009

Zhang, F., Yang, W., Pang, A., Wu, Z., Qi, H., Yao, J., Fan, Z., Shao, J.
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Applied Surface Science 254 (20), pp. 6410-6415 2008

Mikhelashvili, V., Lahav, A., Brener, R., Eisenstein, G.
Composition and electrical characteristics of Al2O3-HfO2-HfTiO nanolaminates on Si
Microelectronic Engineering 85 (7), pp. 1545-1548 2008

Mikhelashvili, V., Eisenstein, G., Thangadurai, P., Kaplan, W.D., Brener, R., Saguy, C.
The use of nanolaminates to obtain structurally stable high- K films with superior electrical properties: HfNO-HfTiO
Journal of Applied Physics 103 (11), art. no. 114106 2008

Smirnova, T.P., Yakovkina, L.V., Kitchai, V.N., Kaichev, V.V., Shubin, Yu.V., Morozova, N.B., Zherikova, K.V.
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Journal of Physics and Chemistry of Solids 69 (2-3), pp. 685-687 2008

Gao, K.Y., Speck, F., Emtsev, K., Seyller, Th., Ley, L.
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Journal of Applied Physics 102 (9), art. no. 094503 2007

Hall, S., Buiu, O., Mitrovic, I.Z., Lu, Y., Davey, W.M.
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NATO Security through Science Series C: Environmental Security, pp. 33-58 2007

Lee, D., Suh, D., Pae, Y., Kim, H., Cho, M.-H., Ko, D.-H.
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Journal of the Electrochemical Society 154 (8), pp. H708-H712 2007

Jeong, S.-W., Roh, Y.
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Journal of the Korean Physical Society 50 (6), pp. 1865-1868 2007

Kim, S.K., Xuan, Y., Ye, P.D., Mohammadi, S., Back, J.H., Shim, M.
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Applied Physics Letters 90 (16), art. no. 163108 2007

Jeong, S.-W., Lee, H.J., Kim, K.S., You, M.T., Roh, Y., Noguchi, T., Xianyu, W., Jung, J.
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Thin Solid Films 515 (12), pp. 5109-5112 2007

Lu, Y., Buiu, O., Hall, S., Mitrovic, I.Z., Davey, W., Potter, R.J., Chalker, P.R.
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition
Microelectronics Reliability 47 (4-5 SPEC. ISS.), pp. 722-725 2007

Buiu, O., Lu, Y., Hall, S., Mitrovic, I.Z., Potter, R.J., Chalker, P.R.
Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition
Thin Solid Films 515 (7-8), pp. 3772-3778 2007

Nobuhito Kawada, Masahiko Ito and Yoji Saito
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Jpn. J. Appl. Phys. 45 9197-9199 2006

Mikhelashvili V, Eisenstein G
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THIN SOLID FILMS 515 (1): 346-352 SEP 25 2006

Cheng XH, Song ZR, Yu YH
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RARE METAL MATERIALS AND ENGINEERING 35 (8): 1192-1194 AUG 2006

Hoex B, Heil SBS, Langereis E, et al.
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APPLIED PHYSICS LETTERS 89 (4): Art. No. 042112 JUL 24 2006

Jo SJ, Ha JS, Park NK, et al.
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THIN SOLID FILMS 513 (1-2): 253-257 AUG 14 2006

Moon TH, Jeong MC, Oh BY, et al.
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NANOTECHNOLOGY 17 (9): 2116-2121 MAY 14 2006

No SY, Eom D, Hwang CS, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (6): F87-F93 2006

Eom D, No SY, Hwang CS, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (4): C229-C234 2006

Chiu, F.-C.
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Journal of Applied Physics 100 (11), art. no. 114102 2006

Moon, T.-H., Lee, J.-W., Ham, M.-H. et al
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Microelectronic Engineering 83 (11-12), pp. 2452-2457 2006

Lee C, Hwang CS, Kim HJ
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INTEGRATED FERROELECTRICS 74: 79-85 2005

Jang, J.H., Hong, S.H., Park, T.J. et al
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ECS Transactions 1 (5), pp. 393-397 2005

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ELECTROCHEMICAL AND SOLID STATE LETTERS 7 (11): G254-G257 2005

Sim H, Samantaray CB, Hwang H
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ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (1): F5-F7 2005

Moon TH, Ham MH, Myoung JM
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APPLIED PHYSICS LETTERS 86 (10): Art. No. 102903 MAR 7 2005

Avishai A, Kaplan WD
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APPLIED PHYSICS LETTERS 85 (22): 5412-5414 NOV 29 2004

Lee C, Hwang CS, Kim HJ
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INTEGRATED FERROELECTRICS 67: 49-57 2004

Lee C, Choi J, Cho M, et al.
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Puthenkovilakam R, Chang JP
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JOURNAL OF APPLIED PHYSICS 96 (5): 2701-2707 SEP 1 2004

Kim SK, Hwang CS
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APPLIED PHYSICS LETTERS 85 (2): 215-217 JUL 12 2004

Lee C, Choi J, Cho M, et al.
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APPL PHYS LETT 84 (15): 2868-2870 APR 12 2004

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ELECTROCHEM SOLID ST 7 (4): F25-F29 2004

Thompson, K., Booske, J.H., Ives, R.L. et al
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Materials Research Society Symposium - Proceedings 810, pp. 209-214 2004

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Park HB, Cho MJ, Park J, et al.
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Chalker, P.R., Jones, A.C.
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96. Chihoon Lee, Jihoon Choi, Moonju Cho, Jaehoo Park, Cheol Seong Hwang, Hyeong Joon Kim , Jaehack Jeong, and Wonshik Lee, "Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate", Appl. Phys. Lett., 83 ,1403 (2003). - August [12]

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Korean Journal of Materials Research 18 (12), pp. 673-677 2008

Bai, L., Yu, D., Lu, G.-H., Liu, F., Wang, Q., Yilmaz, H.
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Applied Physics Letters 91 (6), art. no. 061926 2007

Lee C, Park J, Cho MJ, et al.
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ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (3): G84-G86 2006

Lee, C., Ju, B.S., Kim, H.J. et al
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Meeting Abstracts, pp. 52 2005

Guo HY, Ye ZG
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MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 120 (1-3): 68-71 JUL 15 2005

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Materials Research Society Symposium Proceedings 811, pp. 247-252 2004

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Proceedings of SPIE - The International Society for Optical Engineering 5276, pp. 184-190 2004

Lee C, Choi J, Cho M, et al.
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Lee C, Choi J, Cho M, et al.
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ELECTROCHEM SOLID ST 7 (4): F25-F29 2004

97. Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang, Jong-Pyo Kim, Jong-Ho Lee, Nae-In Lee, Jong-Cheol Lee and Se-Jung Oh, "Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant", J. Appl. Phys., 94, 3641 (2003). - September [72]

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JOURNAL OF CRYSTAL GROWTH 382, pp.61-66 NOV 1 2013

Zhou Guangfen, Ren Jie, Zhang Shaowen
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APPLIED SURFACE SCIENCE 283, pp.968-974 OCT 15 2013

Kim Min-Kyu, Kim Woo-Hee, Lee, Taeyoon, et al.
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Fang Zongtang, Dixon David A.
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Han Jeong Hwan, Ungur Elisaveta, Franquet Alexis, et al.
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Cheng Yi-Lung, Chang You-Ling, Hsieh Cheng-Yang, et al.
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Byun, Y.-C., Mahata, C., An, C.-H., Oh, J., Choi, R., Kim, H.
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APPLIED PHYSICS LETTERS 85 (24): 5965-5967 DEC 13 2004

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APPLIED PHYSICS LETTERS 85 (15): 3289-3291 OCT 11 2004

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ELECTROCHEMICAL AND SOLID STATE LETTERS 7 (11): G254-G257 2004

Chowdhury, N.A., Garg, R., Misra, D.
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Proceedings - Electrochemical Society 4, pp. 381-391 2004

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Hu Zhongxu, Hedley John, Keegan Neil, et al.
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Hwang Sung-Ok, Koo Chang Young, Lee Jai-Yeoul
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Kwak, J., Kingon, A.I., Kim, S.-H.
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Park, J., Won, J., Kim, D., Jo, M.-S., Park, J.Y.
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Kim, S.-H., Leung, A., Koo, C.Y., Kuhn, L., Jiang, W., Kim, D.-J., Kingon, A.I.
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Bastani, Y., Bassiri-Gharb, N.
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Jambunathan, M., Karakaya, K., Elfrink, R., Vullers, R., Van Schaijk, R.
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Maiwa, H., Kim, S.-H.
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Kim, S.-H., Koo, C.Y., Cheon, J.-H., Yeom, J.-H., Woo, H.-J., Ha, J.
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101. Woo Young Park, Kun Ho Ahn, and Cheol Seong Hwang, "Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering", Appl. Phys. Lett., 83, 4387 (2003). [35]

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Park, WY (Park, Woo Young)2,3; Park, MH (Park, Min Hyuk)2,3; Lee, JH (Lee, Jong Ho)2,3; Yoon, JH (Yoon, Jung Ho)2,3; Han, JH (Han, Jeong Hwan)2,3; Choi, JH (Choi, Jung-Hae)1; Hwang, CS (Hwang, Cheol Seong)
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SCIENTIFIC REPORTS Volume: 2 Article Number: 939 DOI: 10.1038/srep00939 Published: DEC 7 2012

Bin-Omran, S.
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PHYSICA B-CONDENSED MATTER Volume: 407 Issue: 17 Pages: 3627-3631 DOI: 10.1016/j.physb.2012.04.058 Published: SEP 1 2012

Ma Zhijun; Zhang Tianjin; Wang Jingyang
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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 22 Issue: 7 Pages: 862-865 DOI: 10.1007/s10854-010-0226-4 Published: JUL 2011

Liang YC
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Yang LH, Wang GS, Dong XL, et al.
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Chao Xiang, Tianjin Zhang, Ruikun Pan, Jinzhao Wang, Zhijun Ma and Min Xia
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Xiao B, Avrutin V, Liu HR, et al.
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APPLIED PHYSICS LETTERS Volume: 95 Issue: 1 Article Number: 012907 Published: JUL 6 2009

Suzuki, T., Ishii, D., Iwazaki, Y., Morito, K., Mizuno, Y.
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Materials Research Society Symposium Proceedings 1075, pp. 43-54 2008

Wang, J., Zhang, T., Wan, N., Xiang, J.
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Journal of Materials Science: Materials in Electronics 19 (12), pp. 1184-1190, 2008

Park, W.Y., Hwang, C.S., Baniecki, J.D., Ishii, M., Kurihara, K., Yamanaka, K.
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Applied Physics Letters 92 (10), art. no. 102902 2008

Jun Wang, Tianjin Zhang, Neng Wan and Junhuai Xiang
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Journal of Materials Science: Materials in ElectronicsVolume 19, Number 12, 1184-1190, DOI: 10.1007/s10854-007-9523-y 2008

Gong, J., Cheng, J., Zhu, W., Yu, S., Wu, W., Meng, Z.
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IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 54 (12), art. no. 4430044, pp. 2579-2581 2007

Liang, Y.-C., Liang, Y.-C.
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Pertsev, N.A., Dittmann, R., Plonka, R., Waser, R.
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Gonon, P., El Kamel, F.
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Hong, X.K., Hu, G.J., Chen, J., Chu, J.H., Dai, N.
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Journal of the American Ceramic Society 90 (4), pp. 1280-1282 2007

Cao, H.-X., Lo, V.C., Li, Z.-Y.
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Cai, X., Frisbie, C.D., Leighton, C.
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Applied Physics Letters 89 (24), art. no. 242915 2006

Kim J, Pak J, Nam K, et al.
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Zhang BS, Guo T, Zhang TJ, et al.
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Suzuki T, Morito K, Iwazaki Y
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IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005 (1), pp. 431-434 2005

Moon, S.E., Kwak, M.H., Kim, Y.-T. et al
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Kim J, Pak J, Nam K, et al.
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Jiang Q, Gao YH
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EUROPEAN PHYSICAL JOURNAL B 46 (2): 193-199 JUL 2005

Lee MJ, Park SY, Kim SG, et al.
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THIN SOLID FILMS 485 (1-2): 47-52 AUG 1 2005

Morito K, Suzuki T
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Wang DY, Wang Y, Zhou XY, et al.
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APPLIED PHYSICS LETTERS 86 (21): Art. No. 212904 MAY 23 2005

Tao YM, Jiang Q, Cao HX
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ACTA PHYSICA SINICA 54 (1): 274-279 JAN 2005

Park WY, Hwang CS
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APPLIED PHYSICS LETTERS 85 (22): 5313-5315 NOV 29 2004

102. Moonju Cho, Hong Bae Park, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang, Gi Hoon Jang, and Jaehack Jeong, "High-k properties of atomic-layer-deposited Hfo2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2o oxidant ", Appl. Phys. Lett. 83, 5503 (2003). [54]

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Shirazi Mahdi, Elliott Simon D.
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TJ Park, P Sivasubramani, RM Wallace, J Kim
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Applied Surface Science 292 (15), pp.880–885 February 2014

Zhou Guangfen, Ren Jie, Zhang Shaowen
Initial growth mechanisms of ZrO2 and TiO2 thin films using cycloheptatrienyl-cyclopentadienyl heteroleptic precursors: A comparative study by density functional theory
APPLIED SURFACE SCIENCE 283, pp.968-974 OCT 15 2013

Garcia, H., Castan, H., Duenas, S., Bailon, L., Campabadal, F., Beldarrain, O., Zabala, M., (...), Rafi, J.M.
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 31 (1) , art. no. 01A127, 2013

Miikkulainen, V., Leskela, M., Ritala, M., Puurunen, R.L.
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Shirazi, M., Elliott, S.D.
Multiple proton diffusion and film densification in atomic layer deposition modeled by density functional theory
Chemistry of Materials 25 (6) , pp. 878-889, 2013

Van Der Geest, A.G., Blaise, P., Richard, N.
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Physical Review B - Condensed Matter and Materials Physics 86 (8) , art. no. 085320 2012

Naween Dahal and Viktor Chikan
Synthesis of Hafnium Oxide-Gold Core−Shell Nanoparticles
INORGANIC CHEMISTRY Volume: 51 Issue: 1 Pages: 518-522 DOI: 10.1021/ic201977d Published: JAN 2 2012

Minha Seo, Seong Keun Kim, Yo-Sep Min and Cheol Seong Hwang
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Journal of Materials Chemistry, 2011

He, G., Zhu, L., Sun, Z., Wan, Q., Zhang, L.
Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
Progress in Materials Science 56 (5), pp. 475-572 2011

Park, T.J., Sivasubramani, P., Coss, B.E., Lee, B., Wallace, R.M., Kim, J., Rousseau, M., (...), Shenai, D.
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Electrochemical and Solid-State Letters 14 (5), pp. G23-G26 2011

Park TJ, Sivasubramani P, Coss BE, et al.
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APPLIED PHYSICS LETTERS 97 9 AUG 30 2010

Cho M, Degraeve R, Roussel P, et al.
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THIN SOLID FILMS Volume: 518 Issue: 15 Pages: 4081-4086 Published: MAY 31 2010

Kim JC, Cho YS, Moon SH
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JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 48 Issue: 6 Article Number: 066515 Part: Part 1 Published: JUN 2009

Kim JH, Park TJ, Cho M, et al.
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Seo, M., Min, Y.-S., Kim, S.K., Park, T.J., Kim, J.H., Na, K.D., Hwang, C.S.
Atomic layer deposition of hafnium oxide from tert- butoxytris(ethylmethylamido)hafnium and ozone: Rapid growth, high density and thermal stability
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Park, T.J., Kim, J.H., Jang, J.H., Na, K.D., Hwang, C.S., Won, J.Y.
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Journal of Applied Physics 103 (8), art. no. 084117 2008

Eom, D., No, S.Y., Park, H., Hwang, C.S., Kim, H.J.
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Electrochemical and Solid-State Letters 10 (12), pp. G93-G96 2007

Maeng, W.J., Kim, H.
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Applied Physics Letters 91 (9), art. no. 092901 2007

Huang, A.P., Di, Z.F., Fu, R.K.Y., Chu, P.K.
Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation
Surface and Coatings Technology 201 (19-20 SPEC. ISS.), pp. 8282-8285 2007

Eom, D., No, S.Y., Hwang, C.S., Kim, H.J.
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Maeng, W.J., Lim, S.J., Kwon, S.-J., Kim, H.
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Applied Physics Letters 90 (6), art. no. 062909 2007

Park, T.J., Kim, J.H., Jang, J.H. et al
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Applied Physics Letters 90 (4), art. no. 042915 2007

Eom, D., Hwang, C.S., Kim, H.J.
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ECS Transactions 3 (3), pp. 121-127 2006

Cho DY, Oh SJ, Park TJ, et al.
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APPLIED PHYSICS LETTERS 89 (13): Art. No. 132904 SEP 25 2006

Yokoyama Y, Zhu SY, Nakajima A
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 (9A): 7091-7093 SEP 2006

No SY, Eom D, Hwang CS, et al.
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JOURNAL OF APPLIED PHYSICS 100 (2): Art. No. 024111 JUL 15 2006

Lehn JSM, Javed S, Hoffman DM
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CHEMICAL VAPOR DEPOSITION 12 (5): 280-284 MAY 2006

Eom, D., No, S.Y., Hwang, C.S. et al
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ECS Transactions 1 (5), pp. 219-225 2005

Hong, S.H., Park, T.J., Kim, J.H. et al
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ECS Transactions 1 (5), pp. 257-266 2005

Seo, M., Kim, S.K., Kim, K.-M. et al
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Meeting Abstracts MA 2005-02, pp. 1046 2005

Park, T.J., Kim, J.H., Hong, S.H. et al
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Kim, J.H., Park, T.J., Hong, S.H. et al
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ECS Transactions 1 (5), pp. 419-424 2005

Kim, J.H., Park, T.J., Hong, S.H. et al
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Jang, J.H., Hong, S.H., Park, T.J. et al
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Park, T.J., Kim, J.H., Hong, S.H. et al
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Kim WK, Nam WH, Kim SH, et al.
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Kukli K, Pilvi T, Ritala M, et al.
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THIN SOLID FILMS 491 (1-2): 328-338 NOV 22 2005

Park TJ, Kim SK, Kim JH, et al.
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MICROELECTRONIC ENGINEERING 80: 222-225 JUN 2005

Lee SW, Hong SH, Park J, et al.
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ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (9): F32-F35 2005

Puurunen RL
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JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 121301 JUN 15 2005

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Chen W, Zhang DW, Ren J, et al.
Quantum chemical study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100) - (2x1): Initial stage of atomic layer deposition of HfO2 on SiGe surface
JOURNAL OF MATERIALS RESEARCH 20 (3): 586-591 MAR 2005

Kim J, Yong K
Atomic layer chemical vapor deposition and electrical characterization of hafnium silicate films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (4): F45-F48 2005

Chen W, Lu HL, Zhang DW, et al.
Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100)-(2x1): Initial stage of atomic layer deposition of HfO2 on SiGe surface
APPLIED PHYSICS LETTERS 86 (14): Art. No. 142901 APR 4 2005

Park J, Cho M, Kim SK, et al.
Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density
APPLIED PHYSICS LETTERS 86 (11): Art. No. 112907 MAR 14 2005

Cho MJ, Jeong DS, Park J, et al.
Comparison between atomic-layer-deposited HfO2 films using O-3 or H2O oxidant and Hf[N(CH3)(2)](4) precursor
APPLIED PHYSICS LETTERS 85 (24): 5953-5955 DEC 13 2004

Wu, X., Couillard, M., Lee, M.-S. et al
Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2
Microscopy and Microanalysis 10 (SUPPL. 2), pp. 606-607 2004

Park J, Cho M, Park HB, et al.
Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics
APPLIED PHYSICS LETTERS 85 (24): 5965-5967 DEC 13 2004

Lo W, Kamath A, Kher S, et al.
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JOURNAL OF MATERIALS RESEARCH 19 (6): 1775-1782 JUN 2004

103. Doo Seok Jeong, Kun Ho Ahn, Woo Young Park, and Cheol Seong Hwang, "Positive temperature coefficient of resistivity in paraelectric (Ba,Sr)TiO3 thin films", Appl. Phys. Lett. 84, 94 (2004) - Jan [12]

Lin Xi, Chu Dewei, Younis Adnan, et al.
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CURRENT ORGANIC CHEMISTRY 17 (15), pp.1666-1679 AUG 2013

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MATERIALS CHEMISTRY AND PHYSICS 105 2-3 426-432 OCT 15 2007

Venkata Saravanan, K., Sudheendran, K., Ghanashyam Krishna, M., James Raju, K.C., Bhatnagar, A.K.
Structural, optical and microwave characteristics of sol-gel derived Barium Strontium Titanate thin films
Materials Chemistry and Physics 105 (2-3), pp. 426-432 2007

Pazik, R., Hreniak, D., Strek, W.
Microwave driven hydrothermal synthesis of Ba1-xSrxTiO3 nanoparticles
Materials Research Bulletin 42 (7), pp. 1188-1194 2007

Panda, B., Roy, A., Dhar, A., Ray, S.K.
Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films
Journal of Applied Physics 101 (6), art. no. 064116 2007

Han, W.H., Chen, X.K., Xie, E.Q. et al
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Surface and Coatings Technology 201 (9-11 SPEC. ISS.), pp. 5680-5683 2007

Venkata Saravanan, K., James Raju, K.C., Ghanashyam Krishna, M., Bhatnagar, A.K.
Preparation of barium strontium titanate using a modified polymeric precursor method
Journal of Materials Science 42 (4), pp. 1149-1155 2007

Ehrhart P, Thomas R
Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes
JOURNAL OF APPLIED PHYSICS 99 (11): Art. No. 114108 JUN 1 2006

Jeong DS, Hwang CS
Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films
JOURNAL OF APPLIED PHYSICS 98 (11): Art. No. 113701 DEC 1 2005

Baniecki JD, Shioga T, Kurihara K, et al.
A study of current transport in (BaxSr1-x)Ti1+yO3+z thin-film capacitors containing a voltage-dependent interface state charge distribution
JOURNAL OF APPLIED PHYSICS 97 (11): Art. No. 114101 JUN 1 2005

Chen B, Yang H, Miao J, et al.
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JOURNAL OF APPLIED PHYSICS 97 (2): Art. No. 024106 JAN 15 2005

Yang H, Chen B, Miao J, et al.
Positive temperature coefficient of resistivity in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitors
APPLIED PHYSICS LETTERS 85 (21): 5019-5021 NOV 22 2004

104. Jeong-Suong Yang, Seung-Hyun Kim, Jung-Hoon Yeom, Chang-Young Koo, Cheol Seong Hwang, Euijoon Yoon, Dong-Joo Kim, Jowoong Ha, "Piezoelectric and Pyroelectric Properties of Pb(Zr,Ti)O3 Films for Micro-Sensors and Actuators", Integrated Ferroelectrics, 54, 515 (2003) [5]

A Datta, D Mukherjee, S Witanachchi, et al.
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Advanced Functional Materials, DOI: 10.1002/adfm.201303290, 3 JAN 2014

Sergeeva ON, Bogomolov AA, Senkevich SV, et al.
Abnormal Pyroelectric and Piezoelectric Hysteresis Loops in PZT Thin Films
INTEGRATED FERROELECTRICS 106 pp. 94-102 2009

Lee H, Kang D, Moon W
A micro-machined source transducer for a parametric array in air
JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA 125 (4) pp.1879-1893 2009

Kuehne, I., Marinkovic, D., Eckstein, G., Seidel, H.
A new approach for MEMS power generation based on a piezoelectric diaphragm
Sensors and Actuators, A: Physical 142 (1), pp. 292-297 2008

Kiselev, D., Bdikin, I., Movchikova, A., Kholkin, A., Suchaneck, G., Gerlach, G.
Piezoresponse in ferroelectric PZT thin films
Materials Research Society Symposium Proceedings 966, pp. 45-50 2006

105. Sang Yeol Kang, Ha Jin Lim, Cheol Seong Hwang, and Hyeong Joon Kim, "Thermal stability and deposition behaviors of Ru thin films prepared by using metalorganic chemical vapor deposition", J. Kor. Phys. Soc., 44, 25 (2004)- Jan [10]

Parnian M.J., Khodadadi A.A., Taheri Najafabadi A., Mortazavi Y.
Preferential chemical vapor deposition of ruthenium on cobalt with highly enhanced activity and selectivity for Fischer-Tropsch synthesis
Applied Catalysis A: General 470, pp.221-231 2014

Gelfond NV, Morozova NB, Igumenov IK, et al.
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JOURNAL OF STRUCTURAL CHEMISTRY 51 1 82-91 FEB 2010

Ye BD, Kim SG, Park JH, et al.
The Interleukin-8-251 A Allele is Associated With Increased Risk of Noncardia Gastric Adenocarcinoma in Helicobacter pylori-infected Koreans
JOURNAL OF CLINICAL GASTROENTEROLOGY Volume: 43 Issue: 3 Pages: 233-239 Published: MAR 2009

Akisik E, Dalay N
Functional polymorphism of thymidylate synthase, but not of the COMT and IL-1B genes, is associated with breast cancer�
JOURNAL OF CLINICAL LABORATORY ANALYSIS 2007

Wang P, Xia HHX, Zhang JY, et al.
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INTERNATIONAL JOURNAL OF CANCER 2007

Kamangar F, Cheng C, Abnet CC, et al.
Interleukin-1B polymorphisms and gastric cancer risk - A meta-analysis
CANCER EPIDEMIOLOGY BIOMARKERS & PREVENTION 15(10) pp. 1920-1928 2006

Song, Y.W., Lee, J., Leg, K., Lee, Y., Jang, H.K.
Atomic layer deposition of Ru by using a new Ru-precursor
ECS Transactions 2 (4), pp. 1-11 2006

Kang SY, No SY, Choi JH, et al.
Pt-doped Ru films prepared by CVD as electrodes for DRAM capacitors
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (1): C12-C14 2005

Kang SY, Hwang CS, Kim HJ
Improvements in growth behavior of CVD Ru films on film substrates for memory capacitor integration
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (1): C15-C19 2005

Kang SY, Kim BS, Hwang CS, et al.
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43 (9B): 6635-6639 SEP 2004

106. Jae Kyeong Jeong, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, and Hyeong Joon Kim, "Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate", Electrochem. Solid St., 7 (4), C43 (2004) Feb [15]

Kumar Ashish, Arafin Shamsul, Amann Markus Christian, et al.
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NANOSCALE RESEARCH LETTERS 8, 481 NOV 15 2013

Park, J., Lee, H.-J., Lee, S.W., Ha, J.-S., Nagata, S., Hong, S.-K., Lee, H.Y., (...), Yao, T.
Surface polarity effects on the hydride vapor phase epitaxial growth of GaN on 6H-SiC with a chrome nitride buffer layer
Electrochemical and Solid-State Letters 15 (5) , pp. H148-H152 2012

Tang, K., Gu, S., Li, S., Ye, J., Zhu, S., Chen, H., Liu, J., (...), Zheng, Y.
Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 29 (3), art. no. 03A106 2011

Islam, M.R., Ohmura, Y., Hashimoto, A., Yamamoto, A., Kinoshita, K., Koji, Y.
"Step-graded interlayers" for the improvement of MOVPE In xGa1-xN (x 0.4) epi-layer quality
Physica Status Solidi (C) Current Topics in Solid State Physics 7 (7-8), pp. 2097-2100 2010

Ye BD, Kim SG, Park JH, et al.
The Interleukin-8-251 A Allele is Associated With Increased Risk of Noncardia Gastric Adenocarcinoma in Helicobacter pylori-infected Koreans
JOURNAL OF CLINICAL GASTROENTEROLOGY Volume: 43 Issue: 3 Pages: 233-239 Published: MAR 2009

Dem'yanets, L.N., Lyutin, V.I.
Status of hydrothermal growth of bulk ZnO: Latest issues and advantages
Journal of Crystal Growth 310 (5), pp. 993-999 2008

Oda, Y., Watanabe, N., Hiroki, M., Yagi, T., Kobayashi, T.
Reduction of buffer leakage current in AlGaN/GaN high-electron-mobility- transistor structure on si substrate by reducing the dislocation density in A1N buffer layer
European Microwave Week 2007 Conference Proceedings, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, art. no. 4412655, pp. 92-95 2007

Mynbaeva M, Sitnikova A, Tregubova A, et al.
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JOURNAL OF CRYSTAL GROWTH 2007

Mynbaev KD, Mynbaeva MG, Zubrilov AS, et al.
Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates�
TECHNICAL PHYSICS LETTERS 2007

Yin, Z., Zhong, F., Qiu, K., Li, X., Wang, Y.
Growth of thick GaN films on mixed-polarity buffer by halide vapor phase epitaxy�
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007

Pantha, B.N., Dahal, R., Nakarmi, M.L., Nepal, N., Li, J., Lin, J.Y., Jiang, H.X., (...), Weyburne, D.
Correlation between optoelectronic and structural properties and epilayer thickness of AlN�
Applied Physics Letters 2007

Xie, J., Fu, Y., Ni, X. et al
I-V characteristics of AuNi Schottky diodes on GaN with Si Nx nanonetwork
Applied Physics Letters 89 (15), art. no. 152108 2006

Yun, F., Dogan, S., Moon, Y.T. et al
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Physica Status Solidi C: Conferences 2 (7), pp. 2087-2090 2005

Jeong JK, Choi JH, Kim HJ, et al.
Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
JOURNAL OF CRYSTAL GROWTH 276 (3-4): 407-414 APR 1 2005

Mynbaeva MG, Mynbaev KD, Sarua A, et al.
Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20 (1): 50-55 JAN 2005

107. Jong-Cheol Lee, S.-J. Oh, Moonju Cho, Cheol Seong Hwang, and Ranju Jung, "Chemical structure of the interface in ultrathin HfO2/Si films", Appl. Phys. Lett., 84, 1305 (2004) - Feb [78]

Molina Joel, Zuniga Carlos, Calleja Wilfrido, et al.
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 31 (1), 01A132 JAN-FEB 2013

Michaelson, S., Akhvlediani, R., Milshtein, I., Hoffman, A., Meyler, B., Salzman, J., ... & Roizin, Y.
The Effect of HfO2 Overlayer on the Thermal Stability of SiGe Substrate.
ECS Solid State Letters, 1(2), N7-N9. 2012

Dusciac, Dorin; Brize, Virginie; Chazalviel, Jean-Noel; et al.
Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2
CHEMISTRY OF MATERIALS Volume: 24 Issue: 16 Pages: 3135-3142 DOI: 10.1021/cm301247v Published: AUG 28 2012

Engstrom, O.; Mitrovic, I. Z.; Hall, S.
Influence of interlayer properties on the characteristics of high-k gate stacks
SOLID-STATE ELECTRONICS Volume: 75 Pages: 63-68 DOI: 10.1016/j.sse.2012.04.042 Published: SEP 2012

Bharali, Pankaj; Thrimurthulu, Gode; Katta, Lakshmi; et al.
Preparation of highly dispersed and thermally stable nanosized cerium-hafnium solid solutions over silica surface: Structural and catalytic evaluation
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY Volume: 18 Issue: 3 Pages: 1128-1135 DOI: 10.1016/j.jiec.2012.01.017 Published: MAY 25 2012

Hwang, Soo Min; Lee, Seung Muk; Choi, Jun Hyuk; et al.
Microstructure and Dielectric Characteristics of High-k Tetragonal ZrO2 Films with Various Thicknesses Processed by Sol Gel Method
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 12 Issue: 4 Pages: 3350-3354 DOI: 10.1166/jnn.2012.5630 Published: APR 2012

Umezawa, Naoto; Shiraishi, Kenji
Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material
APPLIED PHYSICS LETTERS Volume: 100 Issue: 9 Article Number: 092904 DOI: 10.1063/1.3689968 Published: FEB 27 2012

Krzysztof Kolanek, Massimo Tallarida, Marcel Michling, and Dieter Schmeisser
In situ study of the atomic layer deposition of HfO2 on Si
J. Vac. Sci. Technol. A 30, 01A143 2012

Xu Dapeng; Wan Li; Cheng Xinhong; et al.
Effects of Al(2)O(3) on Thermal Stability and Electrical Reliability of HfO(2) Film on Strained SiGe
RARE METAL MATERIALS AND ENGINEERING 40 (8) : 1344-1347, AUG 2011

Xu, H., Zhang, L.-F., Zhang, Q.-X., Ding, S.-J., Zhang, W.
Comparison of reactively sputtered HfO2 and HfSi xOy dielectrics for high density metal-insulator-metal capacitor applications
Advanced Materials Research 284-286, pp. 893-899 2011

Kaichev, V.V., Dubinin, Yu.V., Smirnova, T.P., Lebedev, M.S.
A study of the structure of (HfO2)x(Al 2O3)1-x/Si films by X-ray photoelectron spectroscopy
Journal of Structural Chemistry 52 (3), pp. 480-487 2011

Ma, Z.W., Liu, L.X., Xie, Y.Z., Su, Y.R., Zhao, H.T., Wang, B.Y., Cao, X.Z., (...), Xie, E.Q.
Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films
Thin Solid Films 519 (19), pp. 6349-6353 2011

R. Ramprasad, N. Shi and C. Tang
Modeling the Physics and Chemistry of Interfaces in Nanodielectrics
Dielectric Polymer Nanocomposites 133-161, DOI: 10.1007/978-1-4419-1591-7_5 2010

Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu
Comparison of Reactively Sputtered HfO2 and HfSixOy Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications
Advanced Materials Research, 284-286, 893 2010

Ma ZW, Xie YZ, Liu LX, et al.
The effect of atomic oxygen treatment on the oxygen deficiencies of Hafnium oxide films
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 4 10 1493-1496 OCT 2010

Bersuker G, Park CS, Wen HC, et al.
Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High-k Gate Stacks
IEEE TRANSACTIONS ON ELECTRON DEVICES 57 9 2047-2056 SEP 2010

Filatova EO, Sokolov AA, Ovchinnikov AA, et al.
XPS and depth resolved SXES study of HfO2/Si interlayers
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 181 2-3 Sp. Iss. SI 206-210 AUG 2010

Sokolov AA, Ovchinnikov AA, Lysenkov KM, et al
X-ray spectroscopic examination of thin HfO2 films ALD- and MOCVD-grown on the Si(100) surface
TECHNICAL PHYSICS Volume: 55 Issue: 7 Pages: 1045-1050 JUL 2010

Bersch E, Di M, Consiglio S, et al.
Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy
JOURNAL OF APPLIED PHYSICS 107 4 043702 FEB 15 2010

Bauza, D., Ghobar, O., Guenifi, N., Bayon, S.
Advanced analysis of silicon insulator interface traps in MOSFET's with SiO2 and with HfO2 as gate dielectrics
ECS Transactions 19 (2), pp. 19-54 2009

Bersch, E., Di, M., Consiglio, S., Clark, R.D., Leusink, G.J., Diebold, A.C.
Characterization of HfO2 and hafnium silicate films on SiO 2/Si
AIP Conference Proceedings 1173, pp. 55-61 2009

McDonnell S, Brennan B, Hughes G
High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO2 deposition
APPLIED PHYSICS LETTERS Volume: 95 Issue: 7 Article Number: 072903 Published: AUG 17 2009

Cheng XH, He DW, Song ZR, et al.
Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3
Conference Information: 10th International Conference on Ultimate Integration on Silicon, MAR 18-20, 2009 Aachen, GERMANYSource: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON Pages: 205-208 Published: 2009

Chang CH, Hwu JG
Trapping characteristics of Al2O3/HfO2/SiO2 stack structure prepared by low temperature in situ oxidation in dc sputtering
JOURNAL OF APPLIED PHYSICS Volume: 105 Issue: 9 Article Number: 094103 Published: MAY 1 2009

van Benthem K, Pennycook SJ
Imaging and spectroscopy of defects in semiconductors using aberration-corrected STEM
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 96 Issue: 1 Special Issue: Sp. Iss. SI Pages: 161-169 Published: JUL 2009

Dubourdieu C, Rauwel E, Roussel H, et al.
Addition of yttrium into HfO2 films: Microstructure and electrical properties
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 27 Issue: 3 Pages: 503-514 Published: MAY 2009

Cheng XH, He DW, Song ZR, et al.
Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3
RARE METAL MATERIALS AND ENGINEERING Volume: 38 Issue: 2 Pages: 189-192 Published: FEB 2009

Sokolov AA, Filatova EO, Afanas'ev VV, et al.
Interface analysis of HfO2 films on (100)Si using x-ray photoelectron spectroscopy
JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 3 Article Number: 035308 Published: FEB 7 2009

Tan TT, Liu ZT, Liu WT, et al.
Chemical structure of HfO2/Si interface with angle-resolved synchrotron radiation photoemission spectroscopy
CHINESE PHYSICS LETTERS Volume: 25 Issue: 10 Pages: 3750-3752 Published: OCT 2008

Tallarida, M., Karavaev, K., Schmeisser, D.
The initial atomic layer deposition of Hf O2 Si (001) as followed in situ by synchrotron radiation photoelectron spectroscopy
Journal of Applied Physics 104 (6), art. no. 064116 2008

Kishimoto, S., Hashiguchi, T., Ohshio, S., Saitoh, H.
Density investigation by X-ray reflectivity for thin films synthesized using atmospheric CVD
Chemical Vapor Deposition 14 (9-10), pp. 303-308 2008

Bersch, E., Rangan, S., Bartynski, R.A., Garfunkel, E., Vescovo, E.
Band offsets of ultrathin high- oxide films with Si
Physical Review B - Condensed Matter and Materials Physics 78 (8), art. no. 085114 2008

Cheng, X., He, D., Song, Z., Yu, Y., Shen, D.
The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer
Microelectronic Engineering 85 (9), pp. 1888-1891 2008

Tang, C., Ramprasad, R.
Oxygen defect accumulation at Si: HfO2 interfaces
Applied Physics Letters 92 (18), art. no. 182908 2008

Tang, C., Ramprasad, R.
A study of Hf vacancies at Si:Hf O2 heterojunctions
Applied Physics Letters 92 (15), art. no. 152911 2008

Smirnova, T.P., Yakovkina, L.V., Kitchai, V.N., Kaichev, V.V., Shubin, Yu.V., Morozova, N.B., Zherikova, K.V.
Chemical vapor deposition and characterization of hafnium oxide films
Journal of Physics and Chemistry of Solids 69 (2-3), pp. 685-687 2008

Bersuker, G., Lysaght, P., Choi, R.
Electrical instability in high-k gate stacks: As-grown vs. generated defects
ECS Transactions 6 (3), pp. 687-702 2007

Ghobar, O., Bauza, D., Guillaumot, B.
Defects in the interfacial layer of SiO2-HfO2 gate stacks: Depth distribution and indentification
IEEE International Integrated Reliability Workshop Final Report , art. no. 4469229, pp. 94-98 2007

Tang C, Ramprasad R
Oxygen pressure dependence of HfO2 stoichiometry: An ab initio investigation?
APPLIED PHYSICS LETTERS 2007

Tang CG, Ramprasad R
Ab initio study of oxygen interstitial diffusion near Si : HfO2 interfaces?
PHYSICAL REVIEW B 2007

Wolborski M, Rooth M, Bakowski M, et al.
Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition?
JOURNAL OF APPLIED PHYSICS 2007

Sammelselg V, Rammula R, Aarik J, et al.
XPS and AFM investigation of hafnium dioxide thin films prepared by atomic layer deposition on silicon
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 2007

Cheng XH, Wan L, Song ZR, et al.
Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer?
APPLIED PHYSICS LETTERS 2007

O'Connor, R., Hughes, G., Glans, P.-A. et al
X-ray photoemission and X-ray absorption studies of Hf-silicate dielectric layers
Applied Surface Science 253 (5), pp. 2770-2775 2006

Lysaght, P.S., Bersuker, G., Tseng, H.-H. et al
Spectroscopic analysis of the process-dependent microstructure of ultra-thin high-k gate dielectric film systems
Surface and Interface Analysis 38 (12-13), pp. 1588-1593 2006

Moon, T.-H., Lee, J.-W., Ham, M.-H. et al
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Microelectronic Engineering 83 (11-12), pp. 2452-2457 2006

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Yang HD, Heo S, Lee D, et al.
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APPLIED PHYSICS LETTERS 87 (8): Art. No. 082903 AUG 22 2005

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Moon TH, Ham MH, Myoung JM
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APPLIED PHYSICS LETTERS 86 (10): Art. No. 102903 MAR 7 2005

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APPLIED PHYSICS LETTERS 85 (3): 458-460 JUL 19 2004

108. Ji-Eun Lim, Jae Kyeong Jeong, Kun Ho Ahn, Hyeong Joon Kim, Cheol Seong Hwang, Dong-Yeon Park, Dong-Su Lee, "Microstructural characterization of sputter-deposited Pt thin film electrode", J. Mater. Res., 19(2), 460 (2004) - Feb [6]

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KUMARASAMY GAYATHRI, CHINNUSAMY SARAVANAN, PALANINATHAN KANNAN
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109. Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang and Jaehack Jeong, "Optimized Nitridation of Al2O3 Interlayers for Atomic-Layer-Deposited HfO2 Gate Dielectric Films", Electrochem. Soild St., 7(4), F25-F29 (2004) - Feb [7]

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APPLIED PHYSICS LETTERS 86 (11): Art. No. 112907 MAR 14 2005

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110. Jin Shi Zhao, Dong-Yeon Park, Moo Jin Seo, Cheol Seong Hwang, Young Ki Han, Cheol Hoon Yang, and Ki Young Oh, "Metallorganic CVD of High-Quality PZT Thin Films at Low Temperature with New Zr and Ti Precursors Having MMP Ligands", J. Electrochem. Soc., 151(5), C283-C291 (2004) - Mar [15]

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Izyumskaya N, Alivov Y, Morkoc H
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CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES 32 3-4 111-202 2007

Kusterer, J., Lüker, A., Herfurth, P., Men, Y., Ebert, W., Kirby, P., O\'Keefe, M., Kohn, E.
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Diamond and Related Materials 17 (7-10), pp. 1429-1433 2008

Kusterer, J., Schmid, P., Kohn, E.
Mechanical microactuators based on nanocrystalline diamond films
New Diamond and Frontier Carbon Technology 16 (6), pp. 295-321 2006

Zhao, J.S., Sim, J.S., Lee, H.J. et al
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Electrochemical and Solid-State Letters 9 (2), pp. C29-C31 2006

Sim JS, Zhao JS, Lee HJ, et al.
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INTEGRATED FERROELECTRICS 81: 261-270 2006

Zhao JS, Lee HJ, Sim JS, et al.
Ferroelectric and reliability properties of metal-organic chemical vapor deposited Pb(Zr0.15Ti0.85)O-3 thin films grown in the self-regulation process window
APPLIED PHYSICS LETTERS 88 (17): Art. No. 172904 APR 24 2006

Zhao JS, Sim JS, Lee HJ, et al.
A study of liquid delivery MOCVD of lead oxide thin films on Pt and Ir substrates
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (5): C277-C282 2005

Kong, X., Liu, J., Zeng, Y.
Advances in research of metallorganic precursors for ferroelectric oxide thin films via MOCVD
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APPLIED PHYSICS LETTERS 86 (14): Art. No. 142906 APR 4 2005

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INTEGRATED FERROELECTRICS 68: 105+ 2004

Nagai A, Morioka H, Asano G, et al.
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INTEGRATED FERROELECTRICS 68: 147-154 2004

111. Jae Kyeong Jeong, Jung-Hae Choi, Cheol Seong Hwang, Hyeong Joon Kim, Jae-Hoon Lee, Jung-Hee Lee, and Chang-Soo Kim, "Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate", Appl. Phys. Lett., 84(14), 2527 (2004) - Apr [1]

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112. Chihoon Lee, Jihoon Choi, Moonju Cho, Doo Seok Jeong, Cheol Seong Hwang, and Hyeong Joon Kim, "Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films", Appl. Phys. Lett., 84(15), 2868 (2004) - Apr [3]

Yu XF, Zhu CX, Yu MB
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APPLIED PHYSICS LETTERS 89 (16): Art. No. 163508 OCT 16 2006

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IEEE TRANSACTIONS ON ELECTRON DEVICES 53 (9): 2418-2422 SEP 2006

Lee C, Park J, Cho MJ, et al.
Dopant penetration behavior of B-doped P+ polycrystalline-Si0.73Ge0.27/Al2O3 or AIN-Al2O3/n-Si metal insulator semiconductor capacitors
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (3): G84-G86 2006

113. Dail Eom, In Sang Jeon, Sang Yong No, Cheol Seong Hwang, and Hyeong Joon Kim, "Changes in structures and electrical conduction mechanisms of chemical vapor deposited Ta2O5 thin films by annealing under O3 atmosphere with ultraviolet light radiation", J. Mater. Res., 19, 5, 1516-1522 (2004) - May [6]

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Eom, D., No, S.Y., Hwang, C.S., Kim, H.J.
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Lau WS, Han TJ
General theory of acceptor-oxygen-vacancy complex single donor in high-dielectric-constant metallic oxide insulators
APPLIED PHYSICS LETTERS 86 (15): Art. No. 152107 APR 11 2005

Jeong DS, Park HB, Hwang CS
Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic-layer-deposited HfO2 films
APPLIED PHYSICS LETTERS 86 (7): Art. No. 0729030 FEB 14 2005

114. Chihoon Lee, Jihoon Choi, Moonju Cho, Jahoo Park, Cheol Seong Hwang, Hyeong Joon Kim, and Jaehack Jeong, "Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si(100) substrate", J. Vac. Sci. Technol. B, 22(4), 1838-1843 (2004) - Jul [19]

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Miikkulainen Ville, Leskela Markku, Ritala Mikko, et al.
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JOURNAL OF APPLIED PHYSICS 113 (2), 021301 JAN 14 2013

Yu T., Jin C. G., Yang Y., et al.
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Huang Li-Tien, Chang Ming-Lun, Huang Jhih-Jie, et al.
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Liu Jian-Shuang, Geng Yang, Chen, Li, et al.
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Maendar Hugo, Rammula Raul, Aidla Aleks, et al.
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JOURNAL OF MATERIALS RESEARCH 28 (13), pp.1680-1686 JUL 2013

Sharma, S.K., Barthwal, S., Singh, V., Kumar, A., Dwivedi, P.K., Prasad, B., Kumar, D.
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Micron 44 (1) , pp. 339-346 2013

Lin, C.-H., Kuo, Y.
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Choi, J.H., Mao, Y., Chang, J.P.
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY 51 S198-S202 Suppl. 3 DEC 2007

Pei YL, Murakami H, Higashi S, et al.
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IEICE TRANSACTIONS ON ELECTRONICS 2007

Wang CC, Chiou YK, Chang CH, et al.
Memory characteristics of Au nanocrystals embedded in metal-oxide- semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide?
JOURNAL OF PHYSICS D-APPLIED PHYSICS 2007

Zhu, L.Q., Fang, Q., He, G. et al
Spectroscopic ellipsometry characterization of ZrO2 thin films by nitrogen-assisted reactive magnetron sputtering
Materials Science in Semiconductor Processing 9 (6), pp. 1025-1030 2006

Luo Q, Hess DW, Rees WS
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CHEMICAL VAPOR DEPOSITION 12 (2-3): 181-186 MAR 2006

Rittersma ZM, Hooker JC, Vellianitis G, et al.
Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy
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Luo Q, Dragomir-Cernatescu I, Snyder RL, et al.
Comparison of nitrided HfO2 films deposited in O-2 and N2O by direct liquid injection CVD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (1): F1-F7 2006

Lee C, Hwang CS, Kim HJ
Boron diffusion properties and electrical characteristics of p(+) poly-Si0.73Ge (0.27)/AlNx/Al2O3/AlNx/n-Si(100) using in-situ ALD
INTEGRATED FERROELECTRICS 74: 79-85 2005

Zhu LQ, Fang Q, He G, et al.
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NANOTECHNOLOGY 16 (12): 2865-2869 DEC 2005

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JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 121301 JUN 15 2005

115. Seong Keun Kim and Cheol Seong Hwang, "Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation", J. Appl. Phys., 96(4), 2323-2329 (2004) - Aug [52]

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PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 7 (6), pp.434-437 JUN 2013

Rha Sang Ho, Kim Un Ki, Jung Jisim, et al.
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 31 (6), 061205 NOV 2013

Mundle, R., Terry, Hampton, Bahoura, M, et al.
Ozone-assisted atomic layer deposited ZnO thin films for multifunctional device applications
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JH Kim, TJ Park, SK Kim, DY Cho, HS Jung, et al.
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Applied Surface Science 292 (15), pp.852–856 February 2014

Miikkulainen, V., Leskela, M., Ritala, M., Puurunen, R.L.
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Journal of Applied Physics 113 (2) , art. no. 021301, 2013

Radu, T., Chiriac, M.T., Popescu, O., Simon, V., Simon, S.
In vitro evaluation of the effects of yttria-alumina-silica microspheres on human keratinocyte cells
Journal of Biomedical Materials Research - Part A 101 A (2) , pp. 472-477, 2013

Nahif, F., Music, D., Mraz, S., To Baben, M., Schneider, J.M.
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Xiong, Y., Sang, L., Chen, Q., Yang, L., Wang, Z., Liu, Z.
Electron cyclotron resonance plasma-assisted atomic layer deposition of amorphous Al2O3 thin films
Plasma Science and Technology 15 (1) , pp. 52-55, 2013

Siles, P.F., De Pauli, M., Bof Bufon, C.C., Ferreira, S.O., Bettini, J., Schmidt, O.G., Malachias, A.
Tuning resistive switching on single-pulse doped multilayer memristors
Nanotechnology 24 (3) , art. no. 035702 2013

Bordihn, S., Mertens, V., Engelhart, P., Kersten, F., Mandoc, M. M., Muller, J. W., & Kessels, W. M. M.
Surface Passivation by Al2O3 and a-SiNx: H Films Deposited on Wet-Chemically Conditioned Si Surfaces
ECS Journal of Solid State Science and Technology 2012

Das, A., Gupta, R.K., Modi, M.H., Mukherjee, C., Rai, S.K., Bose, A., Ganguli, T., (...), Deb, S.K.
Fine structures in refractive index of sapphire at the L II;III absorption edge of aluminum determined by soft X-ray resonant reflectivity
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Dingemans, Gijs; Kessels, Erwin
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 30 Issue: 4 Article Number: 040802 DOI: 10.1116/1.4728205 Published: JUL 2012

Potts, Stephen E.; Dingemans, Gijs; Lachaud, Christophe; et al.
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Rai, Vikrant R.; Vandalon, Vincent; Agarwal, Sumit
Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
LANGMUIR Volume: 28 Issue: 1 Pages: 350-357 DOI: 10.1021/la201136k Published: JAN 10 2012

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Thin Al 2O 3 barrier coatings grown on bio-based packaging materials by atomic layer deposition
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Rai VR, Vandalon V, Agarwal S
Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
LANGMUIR 26 17 13732-13735 SEP 7 2010

Potts SE, Keuning W, Langereis E, et al
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 157 Issue: 7 Pages: P66-P74 Published: 2010

Delabie A, Caymax M, Gielis S, et a
"Ozone-based Metal Oxide ALD: Impact of N2/O2 supply ratio in ozone generation"
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 13 Issue: 6 Pages: II176-II178 Published: 2010

Nishiguchi T, Saito S, Kameda N, et al.
Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone
JAPANESE JOURNAL OF APPLIED PHYSICS 48 11 NOV 2009

Choi GJ, Kim SK, Won SJ, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 156 Issue: 9 Pages: G138-G143 Published: 2009

Lamagna L, Scarel G, Fanciulli M, et al.
Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 27 3 443-448 MAY 2009

Goldstein, D.N., McCormick, J.A., George, S.M.
Al2O3 Atomic layer deposition with trimethylaluminum and ozone studied by in situ transmission FTIR spectroscopy and quadrupole mass spectrometry
Journal of Physical Chemistry C 112 (49), pp. 19530-19539 2008

Ghiraldelli, E., Pelosi, C., Gombia, E., Chiavarotti, G., Vanzetti, L.
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Thin Solid Films 517 (1), pp. 434-436 2008

Ghiraldelli, E., Pelosi, C., Gombia, E., Frigeri, C., Vanzetti, L., Abdullayeva, S.
Growth of dielectric A12O3 films by atomic layer deposition
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 47 (10 PART 2), pp. 8174-8177 2008

Song, J., Oh, H.C., Park, T.J., Hwang, C.S., Park, S.-H.K., Yoon, S.M., Hwang, C.-S.
Properties of MIS capacitors using the atomic-layer-deposited ZnO semiconductor and Al2O3 insulator
Journal of the Electrochemical Society 155 (11), pp. H858-H863 2008

Szymanski, S.F., Rowlette, P., Wolden, C.A.
Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 26 (4), pp. 1079-1084 2008

Grigoras, K., Franssila, S., Airaksinen, V.-M.
Investigation of sub-nm ALD aluminum oxide films by plasma assisted etch-through
Thin Solid Films 516 (16), pp. 5551-5556 2008

Kim, S.K., Choi, G.J., Kim, J.H., Hwang, C.S.
Growth behavior of Al-doped TiO2 thin films by atomic layer deposition
Chemistry of Materials 20 (11), pp. 3723-3727 2008

T. Jukna, J. Baltruaitis, V. Sinkevi?us and D. Vironis
A thin chromium film formation monitoring method: Monitoring of the early stages
Thin Solid Films Volume 516, Issue 10, Pages 2943-2947, 31 March 2008

Kim, S.K., Lee, S.Y., Seo, M., Choi, G.-J., Hwang, C.S.
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Journal of Applied Physics 102 (2), art. no. 024109 2007

Frank, M.M.
Atomic layer deposition for CMOS scaling: High-k gate dielectrics on Si, Ge, and III-V semiconductors
ECS Transactions 11 (7), pp. 187-200 2007

Zhang, L., Jiang, H.C., Liu, C., Dong, J.W., Chow, P.
Annealing of Al2O3 thin films prepared by atomic layer deposition?
Journal of Physics D: Applied Physics 2007

Gao, K.Y., Speck, F., Emtsev, K., Seyller, Th., Ley, L.
Thermal stability of surface and interface structure of atomic layer deposited Al2 O3 on H-terminated silicon?
Journal of Applied Physics 2007

Watanabe, T., Hoffmann-Eifert, S., Mi, S. et al
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Journal of Applied Physics 101 (1), art. no. 014114 2007

Frank, M.M., Wang, Y., Ho, M.-T. et al
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Journal of the Electrochemical Society 154 (2), pp. G44-G48 2007

Kim BY, Ko MG, Lee EJ, et al.
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 (3): 1303-1306 Sp. Iss. SI SEP 2006

Gusev EP, Narayanan V, Frank MM
Advanced high-kappa dielectric stacks with polySi and metal gates: Recent progress and current challenges
IBM JOURNAL OF RESEARCH AND DEVELOPMENT 50 (4-5): 387-410 JUL-SEP 2006

Elliott SD, Scarel G, Wiemer C, et al.
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CHEMISTRY OF MATERIALS 18 (16): 3764-3773 AUG 8 2006

Park J, Park TJ, Cho MJ, et al.
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JOURNAL OF APPLIED PHYSICS 99 (9): Art. No. 094501 MAY 1 2006

No SY, Eom D, Hwang CS, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (6): F87-F93 2006

Kim SK, Lee SW, Hwang CS, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (5): F69-F76 2006

Koo J, Kim S, Jeon S, et al.
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY 48 (1): 131-136 JAN 2006

Lee SA, Jeong SY, Hwang JY, et al.
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INTEGRATED FERROELECTRICS 74: 173-180 2005

Elliott, S.D., Scarel, G., Wiemer, C. et al
Precursor combinations for ALD of rare earth oxides and silicates - A quantum chemical and x-ray study
Proceedings - Electrochemical Society PV 2005-09, pp. 605-613 2005

Lee SA, Hwang JY, Kim JP, et al.
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY 47: S292-S295 Suppl. 2 SEP 2005

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Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 121301 JUN 15 2005

Niskanen A, Arstila K, Ritala M, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (7): F90-F93 2005

Min YS, Cho YJ, Hwang CS
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CHEMISTRY OF MATERIALS 17 (3): 626-631 FEB 8 2005

Park J, Cho M, Park HB, et al.
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APPLIED PHYSICS LETTERS 85 (24): 5965-5967 DEC 13 2004

116. Hong Bae Park, Moonju Cho, Jaehoo Park, Suk Woo Lee, Tae Joo Park, and Cheol Seong Hwang, "Improvements in Reliability and Leakage Current Properties of HfO2 Gate Dielectric Films by In Situ O3 Oxidation of Si Substrate", Electrochem. Soild St., 7(11), G254-G257 (2004) - Oct [13]

Miikkulainen Ville, Leskela Markku, Ritala Mikko, et al.
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JOURNAL OF APPLIED PHYSICS 113 (2), 021301 JAN 14 2013

Shen, Yude; Li, Yawei; Zhang, Jinzhong; et al.
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OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS Volume: 6 Issue: 5-6 Pages: 618-622 Published: MAY-JUN 2012

Dezelah IV, C.L., Niinisto, J., Kukli, K., Munnik, F., Lu, J., Ritala, M., Leskela, M., Niinisto, L.
The atomic layer deposition of HfO2 and ZrO2 using advanced metallocene precursors and H2O as the oxygen source
Chemical Vapor Deposition 14 (11-12), pp. 358-365 2008

Park, T.J., Kim, J.H., Jang, J.H., Na, K.D., Hwang, C.S., Won, J.Y.
Effects of surface treatments using O3 and N H3 on electrical properties and chemical structures of high- k Hf O2 dielectric films on strained Si1-x Gex Si substrates
Journal of Applied Physics 103 (8), art. no. 084117 2008

Gao KY, Speck F, Emtsev K, et al.
Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon?
JOURNAL OF APPLIED PHYSICS 2007

Kim SK, Lee SY, Seo M, et al.
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JOURNAL OF APPLIED PHYSICS 2007

Zhang L, Jiang HC, Liu C, et al.
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JOURNAL OF PHYSICS D-APPLIED PHYSICS 2007

Watanabe T, Hoffmann-Eifert S, Mi SB, et al.
Growth of ternary PbTiOx films in a combination of binary oxide atomic layer depositions?
JOURNAL OF APPLIED PHYSICS 2007

Frank MM, Wang Y, Ho MT, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2007

Kang, J., Kim, D.Y., Chang, K.J.
Reliability issues and role of defects in high-k dielectric HfO2 devices?
Journal of the Korean Physical Society 2007

Kim DY, Kang J, Chang KJ
Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 48 (6): 1628-1632 JUN 2006

Lee C, Park J, Cho MJ, et al.
Dopant penetration behavior of B-doped P+ polycrystalline-Si0.73Ge0.27/Al2O3 or AIN-Al2O3/n-Si metal insulator semiconductor capacitors
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (3): G84-G86 2006

Park J, Cho M, Park HB, et al.
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APPLIED PHYSICS LETTERS 85 (24): 5965-5967 DEC 13 2004

117. Yo-Sep Min, Young Jin Cho, and Cheol Seong Hwang, "Amorphous High k Dielectric Bi1-x-yTixSiyOz Thin Films by ALD", Electrochem. Soild St., 7(12), F85-F88 (2004) - Oct [6]

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (11): H915-H918 2007

Nilsen, O., Lie, M., Fjellvåg, H.F. et al
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Topics in Applied Physics 106, pp. 87-99 2006

Min YS, Asanov IP, Hwang CS
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ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (7): G231-G235 2006

Hwang GW, Kim WD, Min YS, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (1): F20-F26 2006

Min YS, Cho YJ, Ko JH, et al.
Atomic layer deposition of Bi1-x-yTixSiyOz thin films from alkoxide precursors and water
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (9): F124-F128 2005

Min YS, Cho YJ, Hwang CS
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CHEMISTRY OF MATERIALS 17 (3): 626-631 FEB 8 2005

118. Seong Keun Kim, Wan-Don Kim, Kyung-Min Kim, Cheol Seong Hwang, and Jaehack Jeong, "High dielectric constant TiO2 thin films on a Ru electrode grown at 250C by atomic-layer deposition", Appl. Phys. Lett., 85(18), 4112-4114 (2004) - Nov [154]

John Pointet, Patrice Gonon, Lawrence Latu-Romain, Ahmad Bsiesy, Christophe Vallée
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Journal of Vacuum Science & Technology A 32, 01A120 2014

Kaczer B., Clima S., Tomida K., et al.
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 31 (1), 01A105 JAN 2013

Longo V., Leick N., Roozeboom F., et al.
Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2 (1), pp.N15-N22 2013

Cho Deok-Yong, Song Seul Ji, Kim Un Ki, et al.
Spectroscopic investigation of the hole states in Ni-deficient NiO films
JOURNAL OF MATERIALS CHEMISTRY C 1 (28), pp.4334-4338 2013

Feng Feng, Hu Shuanglin, Guo Yuqiao, et al.
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CHEMICAL COMMUNICATIONS 49 (89), pp.10462-10464 2013

Miikkulainen Ville, Leskela Markku, Ritala Mikko, et al.
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JOURNAL OF APPLIED PHYSICS 113 (2), 021301 JAN 14 2013

Kim Seong Keun, Kim Kyung Min, Jeong Doo Seok, et al.
Titanium dioxide thin films for next-generation memory devices
JOURNAL OF MATERIALS RESEARCH 28 (3), pp.313-325 FEB 2013

Lee Jaesang, Lee Seung Jae, Han Won Bae, et al.
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 210 (2), pp.276-284 FEB 2013

Guo Dongyun, Ito Akihiko, Goto Takashi, et al.
Effect of laser power on orientation and microstructure of TiO2 films prepared by laser chemical vapor deposition method
ATERIALS LETTERS 93, pp.179-182 FEB 15 2013

Kim Seong Keun, Choi Byung Joon, Yoon Kyung Jean, et al.
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APPLIED PHYSICS LETTERS 102 (8), 082903 FEB 25 2013

Bhattacharya P., Sahoo S., Das C. K.
Microwave absorption behaviour of MWCNT based nanocomposites in X-band region
EXPRESS POLYMER LETTERS 7 (3), pp.212-223 MAR 2013

Yeo C. S., Chung Kwun-Bum, Song J. H., et al.
Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 62 (5), pp.781-786 MAR 2013

Panda Debashis, Tseng Tseung-Yuen
Growth, dielectric properties, and memory device applications of ZrO2 thin films
THIN SOLID FILMS 531, pp.1-20 MAR 15 2013

Zhu, L.; Luo, J. K.; Shao, G.; et al.
On optical reflection at heterojunction interface of thin film solar cells
SOLAR ENERGY MATERIALS AND SOLAR CELLS Volume: 111 Pages: 141-145 Published: APR 2013

Yoon, Jung Ho; Han, Jeong Hwan; Jung, Ji Sim; et al.
Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots
ADVANCED MATERIALS Volume: 25 Issue: 14 Pages: 1987-1992 Published: APR 11 2013

Guo, Dongyun; Ito, Akihiko; Goto, Takashi; et al.
Preparation of TiO2 thick film by laser chemical vapor deposition method
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 24 Issue: 6 Pages: 1758-1763 Published: JUN 2013

Srivastava, Punita; Singh, Kedar
Two-Dimensional Bi2Te3 Nanosheets with Enhanced Electrical and Dielectric Properties: Scope of Novel Storage of Renewable Energy in Nanoelectronics
SCIENCE OF ADVANCED MATERIALS Volume: 5 Issue: 7 Pages: 836-843 Published: JUL 2013

Tsui, Bing-Yue; Kao, Ming-Hong
Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium
APPLIED PHYSICS LETTERS Volume: 103 Issue: 3 Article Number: 032104 Published: JUL 15 2013

Reiners, Marcel; Xu, Ke; Aslam, Nabeel; et al.
Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium
CHEMISTRY OF MATERIALS Volume: 25 Issue: 15 Pages: 2934-2943 Published: AUG 13 2013

Srivastava, Punita; Singh, Kedar
Layered Sb2Te3 Nanoflakes as Chalcogenide Dielectrics
JOURNAL OF ELECTRONIC MATERIALS Volume: 42 Issue: 9 Pages: 2733-2738 Published: SEP 2013

Eddy, Charles R., Jr.; Nepal, Neeraj; Hite, Jennifer K.; et al.
Perspectives on future directions in III-N semiconductor research
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 31 Issue: 5 Article Number: 058501 Published: SEP 2013

Aarik, Lauri; Arroval, Tonis; Rammula, Raul; et al.
Atomic layer deposition of TiO2 from TiCl4 and O-3
THIN SOLID FILMS Volume: 542 Pages: 100-107 Published: SEP 2 2013

Froehlich, K.
TiO2-based structures for nanoscale memory applications
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 16 Issue: 5 Special Issue: SI Pages: 1186-1195 Published: OCT 2013

Lee, Hyunsoo; Lee, Young Keun; Trong Nghia Van; et al.
Nanoscale Schottky behavior of Au islands on TiO2 probed with conductive atomic force microscopy
APPLIED PHYSICS LETTERS Volume: 103 Issue: 17 Article Number: 173103 Published: OCT 21 2013

Aarik, Jaan; Arroval, Tonis; Aarik, Lauri; et al.
Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O-3: Growth of high-permittivity dielectrics with low leakage current
JOURNAL OF CRYSTAL GROWTH Volume: 382 Pages: 61-66 Published: NOV 1 2013

Yeo, Seungmin; Choi, Sang-Hyeok; Park, Ji-Yoon; et al.
Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization
THIN SOLID FILMS Volume: 546 Pages: 2-8 Published: NOV 1 2013

Ohta, Akio; Fukusima, Motoki; Makihara, Katsunori; et al.
Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 11 Special Issue: SI Article Number: UNSP 11NJ06 Part: 2 Published: NOV 2013

Lee, Sang Woon; Choi, Byung Joon; Eom, Taeyong; et al.
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
COORDINATION CHEMISTRY REVIEWS Volume: 257 Issue: 23-24 Special Issue: SI Pages: 3154-3176 Published: DEC 2013

Jiang, K., Meyers, S.T., Anderson, M.D., Johnson, D.C., Keszler, D.A.
Functional ultrathin films and nanolaminates from aqueous solutions
Chemistry of Materials Volume 25, Issue 2, Pages 210-214, 22 January 2013

M Popovici, A Delabie, C Adelmann, et al.
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ECS Journal of Solid State Science and Technology 2 (1), pp.N23-N27 2013

P Srivastava, K Singh
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Journal of Electronic Materials 42 (9), pp 2733-2738 September 2013

Guo, D., Ito, A., Goto, T., Tu, R., Wang, C., Shen, Q., & Zhang, L.
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Journal of Materials Science: Materials in Electronics 2012

Lee, J., Lee, S. J., Han, W. B., Jeon, H., Park, J., Jang, W., ... & Jeon, H.
Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
physica status solidi (a) 2012

Guo, D., Ito, A., Goto, T., Tu, R., Wang, C., Shen, Q., & Zhang, L.
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Materials Letters. 2012

Kim, Seong Keun; Han, Sora; Jeon, Woojin; et al.
Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films
ACS APPLIED MATERIALS & INTERFACES Volume: 4 Issue: 9 Pages: 4726-4730 DOI: 10.1021/am301094t Published: SEP 2012

Zhukov, V. P.; Tyuterev, V. G.; Chulkov, E. V.
Electron-phonon relaxation and excited electron distribution in zinc oxide and anatase
JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 24 Issue: 40 Article Number: 405802 DOI: 10.1088/0953-8984/24/40/405802 Published: OCT 10 2012

Gafoor, A. K. Abdul; Musthafa, M. M.; Kumar, K. Pradeep; et al.
Effect of Ag doping on structural, electrical and dielectric properties of TiO2 nanoparticles synthesized by a low temperature hydrothermal method
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Volume: 23 Issue: 11 Pages: 2011-2016 DOI: 10.1007/s10854-012-0695-8 Published: NOV 2012

Zhukov, V. P.; Tyuterev, V. G.
Electronic band structure and distribution of excited electrons in the conduction band of anatase doped with boron, nitrogen, and carbon
PHYSICS OF THE SOLID STATE Volume: 54 Issue: 11 Pages: 2173-2181 DOI: 10.1134/S1063783412110340 Published: NOV 2012

Zhou, Guangfen; Ren, Jie; Zhang, Shaowen
Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory study
THIN SOLID FILMS Volume: 524 Pages: 179-184 DOI: 10.1016/j.tsf.2012.09.046 Published: DEC 1 2012

Li, Yong; Lu, Peifen; Jiang, Minlin; et al.
Femtosecond Time-Resolved Fluorescence Study of TiO2-Coated ZnO Nanorods/P3HT Photovoltaic Films
JOURNAL OF PHYSICAL CHEMISTRY C Volume: 116 Issue: 48 Pages: 25248-25256 DOI: 10.1021/jp3094897 Published: DEC 6 2012

Ghosh, Sankha; English, Niall J.
Ab initio study on optoelectronic properties of interstitially versus substitutionally doped titania
PHYSICAL REVIEW B Volume: 86 Issue: 23 Article Number: 235203 DOI: 10.1103/PhysRevB.86.235203 Published: DEC 10 2012

Aarik, Jaan; Hudec, Boris; Husekova, Kristina; et al.
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 27 Issue: 7 Article Number: 074007 DOI: 10.1088/0268-1242/27/7/074007 Published: JUL 2012

Yen, Chih-Feng; Lee, Ming-Kwei
Low equivalent oxide thickness of TiO2/GaAs MOS capacitor
SOLID-STATE ELECTRONICS Volume: 73 Pages: 56-59 DOI: 10.1016/j.sse.2012.03.007 Published: JUL 2012

Niinisto, Jaakko; Hatanpaa, Tirno; Kariniemi, Maarit; et al.
Cycloheptatrienyl-Cyclopentadienyl Heteroleptic Precursors for Atomic Layer Deposition of Group 4 Oxide Thin Films
CHEMISTRY OF MATERIALS Volume: 24 Issue: 11 Pages: 2002-2008 DOI: 10.1021/cm2030735 Published: JUN 12 2012

Zhang, Liwu; Dillert, Ralf; Bahnemann, Detlef; et al.
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ENERGY & ENVIRONMENTAL SCIENCE Volume: 5 Issue: 6 Pages: 7491-7507 DOI: 10.1039/c2ee03390a Published: JUN 2012

Cianci, E.; Lattanzio, S.; Seguini, G.; et al.
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THIN SOLID FILMS Volume: 520 Issue: 14 Special Issue: SI Pages: 4745-4748 DOI: 10.1016/j.tsf.2011.10.197 Published: MAY 1 2012

Meena, Jagan Singh; Chu, Min-Ching; Wu, Chung-Shu; et al.
Facile synthetic route to implement a fully bendable organic metal-insulator-semiconductor device on polyimide sheet
ORGANIC ELECTRONICS Volume: 13 Issue: 5 Pages: 721-732 DOI: 10.1016/j.orgel.2012.01.007 Published: MAY 2012

Han, Jeong Hwan; Lee, Sang Woon; Kim, Seong Keun; et al.
Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time
CHEMISTRY OF MATERIALS Volume: 24 Issue: 8 Pages: 1407-1414 DOI: 10.1021/cm200989t Published: APR 24 2012

Seok, Jun Yeong; Kim, Gun Hwan; Kim, Jeong Hwan; et al.
Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode
IEEE ELECTRON DEVICE LETTERS Volume: 33 Issue: 4 Pages: 582-584 DOI: 10.1109/LED.2011.2182175 Published: APR 2012

Osada, Minoru; Sasaki, Takayoshi
Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks
ADVANCED MATERIALS Volume: 24 Issue: 2 Special Issue: SI Pages: 210-228 DOI: 10.1002/adma.201103241 Published: JAN 10 2012

Nie, Anmin; Liu, Jiabin; Li, Qianqian; et al.
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JOURNAL OF MATERIALS CHEMISTRY Volume: 22 Issue: 21 Pages: 10665-10671 DOI: 10.1039/c2jm30690e Published: 2012

Profijt, H. B.; van de Sanden, M. C. M.; Kessels, W. M. M.
Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 15 Issue: 2 Pages: G1-G3 DOI: 10.1149/2.024202esl Published: 2012

Seo, M., Ho Rha, S., Keun Kim, S., Hwan Han, J., Lee, W., Han, S., Seong Hwang, C.
The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
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Kim, S.K., Han, S., Han, J.H., Lee, W., Hwang, C.S.
Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents
Physica Status Solidi - Rapid Research Letters 5 (8), pp. 262-264 2011

Bertaud, T., Bermond, C., Challali, F., Goullet, A., Vallée, C., Fléchet, B.
Ultra wide band frequency characterization of integrated TiTaO-based metal-insulator-metal devices
Journal of Applied Physics 110 (4), art. no. 044110 2011

Abdul Gafoor, A.K., Thomas, J., Musthafa, M.M., Pradyumnan, P.P.
Effects of Sm3+ doping on dielectric properties of anatase TiO2
Journal of Electronic Materials 40 (10), pp. 2152-2158 2011

Sari, W., Eom, T.-K., Kim, S.-H., Kim, H.
Plasma enhanced atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and NH3 plasma
Journal of the Electrochemical Society 158 (1), pp. D42-D47 2011

Kim, S.K., Hoffmann-Eifert, S., Reiners, M., Waser, R.
Relation between enhancement in growth and thickness-dependent crystallization in ALD Ti O2 thin films
Journal of the Electrochemical Society 158 (1), pp. D6-D9 2011

Ke, T.-Y., Chen, P.-C., Yang, M.-H., Chiu, H.-T., Lee, C.-Y.
Photo-induced nucleation of rutile nanorods - An ignored parameter in crystallization
CrystEngComm 13 (17), pp. 5292-5295 2011

Osada, M., Takanashi, G., Li, B.-W., Akatsuka, K., Ebina, Y., Ono, K., Funakubo, H., (...), Sasaki, T.
Controlled polarizability of one-nanometer-thick oxide nanosheets for tailored, high- nanodielectrics
Advanced Functional Materials 21 (18), pp. 3482-3487 2011

Seo, M., Kim, S.K., Min, Y.-S., Hwang, C.S.
Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications
Journal of Materials Chemistry 21 (46), pp. 18497-18502 2011

Park, T.J., Kim, J.H., Jang, J.H., Hwang, C.S., Kang, H.-D., Chung, Y.-K., Oh, Y.-S.
Atomic-layer-deposited dielectric thin films on a Cu clad laminate substrate for embedded metal-insulator-metal capacitor applications in printed circuit boards
Journal of the Electrochemical Society 158 (1), pp. G1-G8 2011

Han Jeong Hwan; Han Sora; Lee Woongkyu; et al.
Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO(2) film as bottom electrode
APPLIED PHYSICS LETTERS Volume: 99 Issue: 2 Article Number: 022901 DOI: 10.1063/1.3609875 Published: JUL 11 2011

Lee Ming-Kwei; Yen Chih-Feng
Characterization of Fluorinated-SiO(2)/PMA-Treated TiO(2)/(NH(4))(2)S-Treated GaAs MOS Structure
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 158 Issue: 8 Pages: G199-G202 DOI: 10.1149/1.3603973 Published: 2011

Kim Seong Keun; Han Sora; Kim Gun Hwan; et al.
Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 158 Issue: 8 Pages: D477-D481 DOI: 10.1149/1.3596018 Published: 2011

Kim, M.-S., Popovici, M., Swerts, J., Pawlak, M.A., Tomida, K., Kaczer, B., Opsomer, K., (...), Kittl, J.A.
Advanced capacitor dielectrics: Towards 2x nm DRAM
2011 3rd IEEE International Memory Workshop, IMW 2011 , art. no. 5873203 2011

Hudec, B., Hušekova, K., Tarre, A., Han, J.H., Han, S., Rosova, A., Lee, W., (...), Frohlich, K.
Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes
Microelectronic Engineering 88 (7), pp. 1514-1516 2011

Frohlich, K., Hudec, B., Aarik, J., Tarre, A., MacHajdik, D., Kasikov, A., Hušekova, K., Gaži, Š.
Post-deposition processing and oxygen content of TiO2-based capacitors
Microelectronic Engineering 88 (7), pp. 1525-1528 2011

Popovici, M., Kim, M.-S., Tomida, K., Swerts, J., Tielens, H., Moussa, A., Richard, O., (...), Kittl, J.A.
Improved EOT and leakage current for metal-insulator-metal capacitor stacks with rutile TiO2
Microelectronic Engineering 88 (7), pp. 1517-1520 2011

Kim, K.M., Choi, B.J., Lee, M.H., Kim, G.H., Song, S.J., Seok, J.Y., Yoon, J.H., (...), Hwang, C.S.
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
Nanotechnology 22 (25), art. no. 254010 2011

Choi, S.-H., Cheon, T., Kim, S.-H., Kang, D.-H., Park, G.-S., Kim, S.
Thermal atomic layer deposition (ALD) of Ru films for cu direct plating
Journal of the Electrochemical Society 158 (6), pp. D351-D356 2011

Hsiao, I.-L., Huang, Y.-J.
Titanium oxide shell coatings decrease the cytotoxicity of ZnO nanoparticles
Chemical Research in Toxicology 24 (3), pp. 303-313 2011

Kim, S.K., Hoffmann-Eifert, S., Waser, R.
High growth rate in atomic layer deposition of TiO2 thin films by UV irradiation
Electrochemical and Solid-State Letters 14 (4), pp. H146-H148 2011

Lee, S.W., Han, J.H., Kim, S.K., Han, S., Lee, W., Hwang, C.S
Role of interfacial reaction in atomic layer deposition of TiO2 thin films using Ti(O- i Pr)2(tmhd)2 on Ru or RuO 2 substrates
Chemistry of Materials 23 (4), pp. 976-983 2011

Kim, S.K., Han, S., Han, J.H., Hwang, C.S.
Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films
Applied Surface Science 257 (9), pp. 4302-4305 2011

Lee, S.Y., Kim, S.K., Kim, K.M., Choi, G.-J., Han, J.H., Hwang, C.S.
Electrically benign Ru wet etching method for fabricating Ru/TiO 2 /Ru capacitor
Journal of the Electrochemical Society 158 (3), pp. G47-G51 2011

Perevalov, T.V., Gritsenko, V.A.
Electronic structure of TiO2 rutile with oxygen vacancies: Ab initio simulations and comparison with the experiment
Journal of Experimental and Theoretical Physics 112 (2), pp. 310-316 2011

Yang, J.J., Kobayashi, N.P., Strachan, J.P., Zhang, M.-X., Ohlberg, D.A.A., Pickett, M.D., Li, Z., (...), Williams, R.S.
Dopant control by atomic layer deposition in oxide films for memristive switches
Chemistry of Materials 23 (2), pp. 123-125 2011

Popovici, M., Swerts, J., Tomida, K., Radisic, D., Kim, M.-S., Kaczer, B., Richard, O., (...), Kittl, J.A.
Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium
Physica Status Solidi - Rapid Research Letters 5 (1), pp. 19-21 2011

Yoon, J.H., Kim, K.M., Lee, M.H., Kim, S.K., Kim, G.H., Song, S.J., Seok, J.Y., Hwang, C.S.
Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior
Applied Physics Letters 97 (23), art. no. 232904 2010

Han, S., Kim, S.K., Hwang, C.S.
Structural and electrical characterization of TiO2 and Al-doped TiO2 films on Ir electrode for next generation DRAM capacitor
Electrochemical Society - 218th ECS Meeting Abstracts 2010, MA 2010-02 2, pp. 1445 2010

Han, S., Kim, S.K., Hwang, C.S.
Structural and electrical characterization of TiO2 and Al-doped TiO2 films on Ir electrode for next generation DRAM capacitor
ECS Transactions 33 (2), pp. 111-115 2010

Zhukov VP, Chulkov EV
Ab initio approach to the excited electron dynamics in rutile and anatase TiO2
JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 22 Issue: 43 Article Number: 435802 Published: NOV 3 2010

Kim SK, Lee SW, Han JH, et al.
Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory
ADVANCED FUNCTIONAL MATERIALS Volume: 20 Issue: 18 Pages: 2989-3003 Published: SEP 23 2010

Osada M, Akatsuka K, Ebina Y, et al.
Robust High-kappa Response in Molecularly Thin Perovskite Nanosheets
ACS NANO Volume: 4 Issue: 9 Pages: 5225-5232 Published: SEP 2010

Seo M, Kim SK, Han JH, et al
Permittivity Enhanced ALD HfO2 thin films manipulated by a rutile TiO2 interlayer
CHEMISTRY OF MATERIALS Volume: 22 Issue: 15 Pages: 4419-4425 AUG 10 2010

Lee MK, Yen CF
Low leakage and high-k liquid phase deposited TiO2 and SiO2/TiO2 films on (NH4)(2)S-treated GaAs
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 13 Issue: 10 Pages: G87-G90 2010

Park WY, Kim GH, Seok JY, et al.
A Pt/TiO2/Ti Schottky type selection diode for alleviating the sneak current in resistance switching memory arrays
NANOTECHNOLOGY Volume: 21 Issue: 19 Article Number: 195201 Published: MAY 14 2010

Kim SK, Han JH, Kim GH, et al.
Investigation on the Growth Initiation of Ru thin films by ALD
CHEMISTRY OF MATERIALS Volume: 22 Issue: 9 Pages: 2850-2856 Published: MAY 11 2010

Karthik K, Pandian SK, Jaya NV
Effect of nickel doping on structural, optical and electrical properties of TiO2 nanoparticles by sol-gel method
APPLIED SURFACE SCIENCE Volume: 256 Issue: 22 Pages: 6829-6833 Published: SEP 1 2010

Ortiz RP, Facchetti A, Marks TJ
High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors
CHEMICAL REVIEWS 110 1 205-239 JAN 2010

Kim, S.K., Lee, S.W., Han, J.H., Lee, B., Han, S., Hwang, C.S.
Capacitors with an equivalent oxide thickness of < 0.5 nm for next generation semiconductor memory
Electrochemical Society - 218th ECS Meeting Abstracts 2010, pp. 1414 2010

Kim SK, Lee SY, Lee SW, et al.
Atomic layer deposition of ru thin films using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a liquid injection system
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS 1, 2 pp. 163-166 2007

Tung HT, Song JM, Feng SW, et al.
Dependence of surface atomic arrangement of titanium dioxide on metallic nanowire nucleation by thermally assisted photoreduction
PHYSICAL CHEMISTRY CHEMICAL PHYSICS 12 (3) pp. 740-744 2010

Rose M, Niinisto J, Michalowski P, et al.
Atomic Layer Deposition of Titanium Dioxide Thin Films from Cp*Ti(OMe)(3) and Ozone
JOURNAL OF PHYSICAL CHEMISTRY C 113(52) pp. 21825-21830 2009

Won SJ, Suh S, Lee SW, et al.
Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
ELECTROCHEMICAL AND SOLID STATE LETTERS 13(2) pp. G13-G16 2010

Katamreddy R, Omarjee V, Feist B, et al.
Ti Source Precursors for Atomic Layer Deposition of TiO2, STO and BST
ATOMIC LAYER DEPOSITION APPLICATIONS 4 ECS Transactions 16(4) pp. 113-122 2008

Kim KM, Lee SY, Choi GJ, et al.
Electrically Benign Dry-Etching Method for Rutile TiO2 Thin-Film Capacitors with Ru Electrodes
ELECTROCHEMICAL AND SOLID STATE LETTERS 13 (1) pp. G1-G4 2010

Schroeder, U., Weinreich, W., Erben, E., Mueller, J., Wilde, L., Heitmann, J., Agaiby, R., (...), Kersch, A.
Detailed correlation of electrical and breakdown characteristics to the structural properties of ALD grown HfO2- and ZrO2-based capacitor dielectrics
ECS Transactions 25 (4), pp. 357-366 2009

Park, M.H., Lee, H.J., Kim, G.H., Hwang, C.S.
The effect of periodic relaxation on the growth behavior and electrical properties of atomic layer deposited PbTiO3 thin film
ECS Transactions 19 (2), pp. 815-828 2009

Han, J.H., Lee, S.W., Choi, G.J., Lee, S.Y., Hwang, C.S., Dussarrat, C., Gatineau, J.
Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO4 precursor for the DRAM capacitor electrode
ECS Transactions 19 (2), pp. 717-728 2009

Choi, G.-J., Kim, S.K., Han, J.H., Lee, S.W., Hwang, C.S.
A mass-production compatible capacitor technology for DRAMs with design rule down to 20 nm
ECS Transactions 19 (2), pp. 625-648 2009

Engel-Herbert, R., Jalan, B., Cagnon, J., Stemmer, S.
Microstructure of epitaxial rutile TiO2 films grown by molecular beam epitaxy on r-plane Al2O3
Journal of Crystal Growth 312 (1), pp. 149-153 2009

Hara H, Yamato M, Kikkawa T
Properties of TiO2/LaxTi1-xOy/TiO2 Stacked Thin Films
JAPANESE JOURNAL OF APPLIED PHYSICS 48 (10) 101403 2009

Eom TK, Sari W, Choi KJ, et al.
Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2
ELECTROCHEMICAL AND SOLID STATE LETTERS 12(11) pp. D85-D88 2009

Choi GJ, Kim SK, Won SJ, et al.
Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O-2 Reactants
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 156 Issue: 9 Pages: G138-G143 Published: 2009

Kim SK, Hoffmann-Eifert S, Waser R
Growth of Noble Metal Ru Thin Films by Liquid Injection Atomic Layer Deposition
JOURNAL OF PHYSICAL CHEMISTRY C Volume: 113 Issue: 26 Pages: 11329-11335 Published: JUL 2 2009

Rai VR, Agarwal S
Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
JOURNAL OF PHYSICAL CHEMISTRY C Volume: 113 Issue: 30 Pages: 12962-12965 Published: JUL 30 2009

Choi GJ, Kim SK, Lee SY, et al.
Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 156 Issue: 7 Pages: G71-G77 Published: 2009

Kim SK, Hoffmann-Eifert S, Mi S, et al.
Liquid Injection Atomic Layer Deposition of Crystalline TiO2 Thin Films with a Smooth Morphology from Ti(O-i-Pr)(2)(DPM)(2)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 156 Issue: 8 Pages: D296-D300 Published: 2009

Akatsuka K, Haga M, Ebina Y, et al.
Construction of Highly Ordered Lamellar Nanostructures through Langmuir-Blodgett Deposition of Molecularly Thin Titania Nanosheets Tens of Micrometers Wide and Their Excellent Dielectric Properties
ACS NANO Volume: 3 Issue: 5 Pages: 1097-1106 Published: MAY 2009

Rauwel E, Ducroquet F, Rauwel P, et al.
Effect of annealing and electrical properties of high-kappa thin films grown by atomic layer deposition using carboxylic acids as oxygen source
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 27 Issue: 1 Pages: 230-235 Published: JAN-FEB 2009

Niinisto J, Kukli K, Heikkila M, et al.
Atomic Layer Deposition of High-k Oxides of the Group 4 Metals for Memory Applications
ADVANCED ENGINEERING MATERIALS Volume: 11 Issue: 4 Special Issue: Sp. Iss. SI Pages: 223-234 Published: APR 2009

Joo DK, Park JS, Kang SW
Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 12 Issue: 3 Pages: H77-H79 Published: 2009

Han JH, Lee SW, Choi GJ, et al.
Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor
CHEMISTRY OF MATERIALS Volume: 21 Issue: 2 Pages: 207-209 Published: JAN 27 2009

Won S, Go S, Lee W, et al.
Effects of Defects Generated in ALD TiO2 Films on Electrical Properties and Interfacial Reaction in TiO2/SiO2/Si System upon Annealing in Vacuum
METALS AND MATERIALS INTERNATIONAL Volume: 14 Issue: 6 Pages: 759-765 Published: DEC 2008

Rauwel E, Clavel G, Willinger MG, et al.
Non-aqueous routes to metal oxide thin films by atomic layer deposition
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION Vol. 47(19) p. 3592-3595 2008

Kim SK, Choi GJ, Lee SY, et al.
Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors
ADVANCED MATERIALS Vol.20(8) p.1429 2008

Aguas H, Popovici N, Pereira L, et al.
Spectroscopic ellipsometry study of Co-doped TiO2 films
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol.205(4) p.880-883 2008

Rai VR, Agarwal S
Surface reaction mechanisms during ozone-based atomic layer deposition of titanium dioxide
JOURNAL OF PHYSICAL CHEMISTRY C Vol.112(26) p.9552-9554 2008

Kwon H, Park HH, Kim BH, et al.
Composition-Dependent Structural and Electrical Properties of ZrxTiyO2 Films Grown on RuO2 Substrate by ALD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Vol. 156(2) p. G13-G16 2009

Pore V, Kivela T, Ritala M, et al.
Atomic layer deposition of photocatalytic TiO2 thin films from TiF4 and H2O
DALTON TRANSACTIONS issue(45) p.6467-6474 2008

Osada M, Akatsuka K, Ebina Y, et al.
Langmuir-Blodgett fabrication of nanosheet-based dielectric films without an interfacial dead layer
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 47(9) p.7556-7560 Part 2 2008

Rauwel E, Willinger MG, Ducroquet F, et al.
Carboxylic acids as oxygen sources for the atomic layer deposition of high-kappa metal oxides
JOURNAL OF PHYSICAL CHEMISTRY C Vol.112(33) p.12754-12759 2008

Ghosh, M.K., Choi, C.H.
Adsorption of TiCl4 on H/Si(1 0 0)-2 ?1 Surface
Chemical Physics Letters 461 (4-6), pp. 249-253 2008

Brassard, D., El Khakani, M.A.
Thermal behavior of the microstructure and the electrical properties of magnetron-sputtered high- k titanium silicate thin films
Journal of Applied Physics 103 (11), art. no. 114110 2008

Kim, S.K., Choi, G.J., Kim, J.H., Hwang, C.S.
Growth behavior of Al-doped TiO2 thin films by atomic layer deposition
Chemistry of Materials 20 (11), pp. 3723-3727 2008

Kim, S.K., Choi, G.-J., Hwang, C.S.
Controlling the composition of doped materials by ALD: A case study for Al-doped TiO2 films
Electrochemical and Solid-State Letters 11 (7), pp. G27-G29 2008

Ghosh, M.K., Choi, C.H.
Initial adsorption mechanisms of TiCl4 on OH/Si(1 0 0)-2 ?1
Chemical Physics Letters 457 (1-3), pp. 69-73 2008

Frohlich, K., 뛞pajna, M., Rosova? A., Dobro�ka, E., Hu쉋kova? K., Aarik, J., Aidla, A.
Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes
Electrochemical and Solid-State Letters 11 (6), pp. G19-G21 2008

Kim, S.K., Hwang, C.S.
Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates
Electrochemical and Solid-State Letters 11 (3), pp. G9-G11 2008

Woojin Jeon,z Hoi-Sung Chung, Daekwon Joo, and Sang-Won Kang
TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
Electrochemical and Solid-State Letters, 11 (2) H19-H21 2008

Kim, C.-S., Jeong, H.-D.
Band gap tuning in nanoporous TiO2-ZrO2 hybrid thin films
Bulletin of the Korean Chemical Society 28 (12), pp. 2333-2337 2007

Niskanen A, Arstila K, Leskela M, et al.
Radical enhanced atomic layer deposition of titanium dioxide
CHEMICAL VAPOR DEPOSITION 13 (4): 152-157 APR 2007

Rodriguez KR, Tian H, Heer JM, et al.
Extraordinary infrared transmission resonances of metal microarrays for sensing nanocoating thickness
JOURNAL OF PHYSICAL CHEMISTRY C 111 (32): 12106-12111 AUG 16 2007

Kim JH, Kil DS, Yeom SJ, et al.
Modified atomic layer deposition of RuO2 thin films for capacitor electrodes
APPLIED PHYSICS LETTERS 91 (5): Art. No. 052908 JUL 30 2007

Kim SK, Lee SY, Seo M, et al.
Impact of O-3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications
JOURNAL OF APPLIED PHYSICS 102 (2): Art. No. 024109 JUL 15 2007

Osada M, Akatsuka K, Ebina Y, et al.
Solution-based fabrication of high-kappa dielectric nanofilms using titania nanosheets as a building block
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (10B): 6979-6983 OCT 2007

Song XM, Takoudis CG
Effect of NH3 on the low pressure chemical vapor deposition of TiO2 film at low temperature using tetrakis(diethylamino)titanium and oxygen
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 25 (2): 360-367 MAR-APR 2007

Zhao, R., Lin, Y., Cai, J., Nan, C.-W., Xie, D.
Preparation and properties of Ni-Si-O thin film prepared by sol-gel method
Key Engineering Materials 336-338 I, pp. 799-801 2007

Kim JY, Jung HS, No JH, et al.
Influence of anatase-rutile phase transformation on dielectric properties of sol-gel derived TiO2 thin films
JOURNAL OF ELECTROCERAMICS 16 (4): 447-451 JUL 2006

Liao MH, Hsu CH, Chen DH
Preparation and properties of amorphous titania-coated zinc oxide nanoparticles
JOURNAL OF SOLID STATE CHEMISTRY 179 (7): 2020-2026 JUL 2006

Liu GX, Shan FK, Lee WJ, et al.
Transparent titanium dioxide thin film deposited by plasma-enhanced atomic layer deposition
INTEGRATED FERROELECTRICS 81: 239-248 2006

Wallrapp F, Fromherz P
TiO2 and HfO2 in electrolyte-oxide-silicon configuration for applications in bioelectronics
JOURNAL OF APPLIED PHYSICS 99 (11): Art. No. 114103 JUN 1 2006

Jogi I, Aarik J, Laan M, et al.
Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks
THIN SOLID FILMS 510 (1-2): 39-47 JUL 3 2006

Cho E, Han S, Ahn HS, et al.
First-principles study of point defects in rutile TiO2-x
PHYSICAL REVIEW B 73 (19): Art. No. 193202 MAY 2006

Osada M, Ebina Y, Funakubo H, et al.
High-k dielectric nanofilms fabricated from Titania nanosheets
ADVANCED MATERIALS 18 (8): 1023+ APR 18 2006

Maeng WJ, Kim H
Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (6): G191-G194 2006

Lee MK, Yen CF, Huang JJ
Electrical characteristics of liquid-phase-deposited TiO2 films on GaAs substrate with (NH4)(2)S-x treatment
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (5): F77-F80 2006

Kim SK, Hwang GW, Kim WD, et al.
Transformation of the crystalline structure of an ALD TiO2 film on a Ru electrode by O-3 pretreatment
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (1): F5-F7 2006

Kim SK, Kim KM, Kwon OS, et al.
Structurally and electrically uniform deposition of high-k TiO2 thin films on a Ru electrode in three-dimensional contact holes using atomic layer deposition
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (12): F59-F62 2005

Choi BJ, Jeong DS, Kim SK, et al.
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
JOURNAL OF APPLIED PHYSICS 98 (3): Art. No. 033715 AUG 1 2005

Puurunen RL
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 121301 JUN 15 2005

Persson C, da Silva AF
Strong polaronic effects on rutile TiO2 electronic band edges
APPLIED PHYSICS LETTERS 86 (23): Art. No. 231912 JUN 6 2005

119. Woo Young Park and Cheol Seong Hwang, "Film-thickness-dependent Curie-Weiss behavior of (Ba,Sr)TiO3 thin-film capacitors having Pt electrodes", Appl. Phys. Lett., 85(22), 5313-5315 (2004) - Nov [19]

Levasseur, D., El-Shaarawi, H.B., Pacchini, S., Rousseau, A., Payan, S., Guegan, G., Maglione, M.
Systematic investigation of the annealing temperature and composition effects on the dielectric properties of sol-gel Ba xSr 1-xTiO 3 thin films
Journal of the European Ceramic Society 33 (1) , pp. 139-146 2013

Stognij, A. I.; Novitskii, N. N.; Evdokimov, A. A.; et al.
Ba0.8Sr0.2TiO3 ferroelectric nanofilms on silicon buffered with a TiO2 layer
INORGANIC MATERIALS Volume: 48 Issue: 6 Pages: 619-621 DOI: 10.1134/S0020168512060192 Published: JUN 2012

Su, Y., Chen, H., Li, J.J., Soh, A.K., Weng, G.J.
Effects of surface tension on the size-dependent ferroelectric characteristics of free-standing BaTiO3 nano-thin films
Journal of Applied Physics 110 (8), art. no. 084108 2011

Bastani, Y., Schmitz-Kempen, T., Roelofs, A., Bassiri-Gharb, N.
Critical thickness for extrinsic contributions to the dielectric and piezoelectric response in lead zirconate titanate ultrathin films
Journal of Applied Physics 109 (1), art. no. 014115 2011

Schmelzer S, Brauhaus D, Hoffmann-Eifert S, et al.
SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers
APPLIED PHYSICS LETTERS 97 13 SEP 27 2010

Yang LH, Wang GS, Dong XL, et al.
Unusual Curie Point Independence of Thickness and Interfacial Properties for Perfectly (111)-Oriented Ba0.6Sr0.4TiO3 Thin Films
JOURNAL OF THE AMERICAN CERAMIC SOCIETY 93 9 2526-2529 SEP 2010

Sakamoto N, Yoshioka H, Suzuki J, et al
Effect of bottom electrode structure on electrical properties of BaTiO3 thin films fabricated by CSD method
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN Volume: 118 Issue: 1380 Pages: 669-673 AUG 2010

Mayama H, Naito T
Correlation between Curie temperature and system dimension
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 41 10 1878-1881 OCT 2009

Doan TM, Lu L, Lai MO
Thickness dependence of structure, tunable and pyroelectric properties of laser-ablated Ba(Zr0.25Ti0.75)O-3 thin films
JOURNAL OF PHYSICS D-APPLIED PHYSICS 43 3 035402 JAN 27 2010

Mukhortov VM, Golovko YI, Zelenchuk PA, et al.
Barium-Strotium Titanate Based Ferroelectric Heterostructures
INTEGRATED FERROELECTRICS 107 83-91 2009

Jie, W., Zhang, Y.
Influence of growth temperature on the microstructure and dielectric pro-perties of Ba (Zr0.2Ti0.8) O3 thin films on single crystal oxide substrates
Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society 37 (8), pp. 1424-1428 2009

Moreira ML, Andres J, Longo VM, et al.
Photoluminescent behavior of SrZrO3/SrTiO3 multilayer thin films
CHEMICAL PHYSICS LETTERS 473 4-6 293-298 MAY 12 2009

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MATERIALS CHEMISTRY AND PHYSICS Vol. 112(2) p. 542-545 2008

Golovko, Yu.I., Mukhortov, V.M., Yuzyuk, Yu.I., Janolin, P.E., Dkhil, B.
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Physics of the Solid State 50 (3), pp. 485-489 2008

Song, S., Zhai, J., Yao, X.
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Materials Science and Engineering B: Solid-State Materials for Advanced Technology 145 (1-3), pp. 28-33 2007

Zhang TJ, Wang J, Zhang BS, et al.
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TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA 16: S119-S122 Part A Sp. Iss. 1 JUN 2006

Zhu XH, Zheng DN, Zeng H, et al.
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THIN SOLID FILMS 496 (2): 376-382 FEB 21 2006

Regnery S, Ding Y, Ehrhart P, et al.
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JOURNAL OF APPLIED PHYSICS 98 (8): Art. No. 084904 OCT 15 2005

120. Kyung-Min Kim, Byung Joon Choi, Seong Keun Kim, and Cheol Seong Hwang, "Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators", Appl. Phys. Lett., 85(22), 5412-5414 (2004) - Nov [2]

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Kim, E.J., Lee, S.J., Kim, G.Y., Yang, H.R., Kwak, C.H.
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121. Moonju Cho, Doo Seok Jeong, Jaehoo Park, Hong Bae Park, Suk Woo Lee, Tae Joo Park, Cheol Seong Hwang, Gi Hoon Jang, and Jaehack Jeong, "Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor", Appl. Phys. Lett., 85(24), 5953-5955 (2004) - Dec [51]

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APPLIED PHYSICS LETTERS Volume: 102 Issue: 14 Article Number: 142902 Published: APR 8 2013

A Yanguas-Gil, JA Libera, JW Elam
Modulation of the Growth Per Cycle in Atomic Layer Deposition Using Reversible Surface Functionalization
Chemistry of Materials 25 (24), pp 4849–4860 2013

JH Kim, TJ Park, SK Kim, DY Cho, HS Jung, et al.
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Applied Surface Science 292, pp.852–856 15 February 2014

Miikkulainen, V., Leskela, M., Ritala, M., Puurunen, R.L.
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Journal of Applied Physics 113 (2) , art. no. 021301, 2013

Cheng, Y.-L., Chang, Y.-L., Hsieh, C.-Y., Lin, J.-R.
Comprehensive comparison of structural, electrical, and reliability characteristics of HfO2 gate dielectric with H2O or O 3 oxidant
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Byun, Y.-C., Mahata, C., An, C.-H., Oh, J., Choi, R., Kim, H.
Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Journal of Physics D: Applied Physics 45 (43) , art. no. 435305 2012

Cho, D.-Y., Jung, H.S., Yu, I.-H., Yoon, J.H., Kim, H.K., Lee, S.Y., Jeon, S.H., (...), Hwang, C.S.
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Chemistry of Materials 24 (18) , pp. 3534-3543 2012

Naween Dahal and Viktor Chikan
Synthesis of Hafnium Oxide-Gold Core−Shell Nanoparticles
Inorganic Chemistry 2012

Hinkle, C.L., Vogel, E.M., Ye, P.D., Wallace, R.M.
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications
Current Opinion in Solid State and Materials Science 15 (5), pp. 188-207 2011

Chung, K.J., Park, T.J., Sivasubramani, P., Kim, J., Ahn, J.
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ECS Transactions 28 (1), pp. 221-226 2010

Nyns L, Delabie A, Swerts J, et al.
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Park TJ, Sivasubramani P, Coss BE, et al.
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APPLIED PHYSICS LETTERS 97 9 AUG 30 2010

Lee HJ, Park MH, Min YS, et al.
Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination
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Park TJ, Chung KJ, Kim HC, et al.
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ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 13 Issue: 8 Pages: G65-G67 Published: 2010

Swerts J, Peys N, Nyns L, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157 1 G26-G31 2010

Maeng WJ, Son JY, Kim H
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 5 G33-G36 2009

Lee BH, Song SC, Choi R, et al.
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(1), 8-20, 2008

Hsieh, C.-I., Pan, T.-M., Lin, J.-C., Peng, Y.-B., Huang, T.-Y., Wu, C.-R., Shih, S.
Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition
Applied Surface Science 255 (6), pp. 3769-3772, 2008

Seo, M., Min, Y.-S., Kim, S.K., Park, T.J., Kim, J.H., Na, K.D., Hwang, C.S.
Atomic layer deposition of hafnium oxide from tert- butoxytris(ethylmethylamido)hafnium and ozone: Rapid growth, high density and thermal stability
Journal of Materials Chemistry 18 (36), pp. 4324-4331, 2008

Heil, S.B.S., Van Hemmen, J.L., Van De Sanden, M.C.M., Kessels, W.M.M.
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Journal of Applied Physics 103 (10), art. no. 103302 2008

Kamiyama, S., Kurosawa, E., Nara, Y.
Improving threshold voltage and device performance of gate-first HfSiON/metal gate n-MOSFETs by an ALD La2O3 capping layer
Journal of the Electrochemical Society 155 (6), pp. H373-H377 2008

Park, I.-S., Lee, J., Yoon, S., Chung, K.J., Lee, S., Park, J., Kim, C.K., Ahn, J.
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ECS Transactions 11 (7), pp. 61-66 2007

Seman M, Robbins JJ, Agarwal S, et al.
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APPLIED PHYSICS LETTERS 90 (13): Art. No. 131504 MAR 26 2007

Cho M, Kim JH, Hwang CS, et al.
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APPLIED PHYSICS LETTERS 90 (18): Art. No. 182907 APR 30 2007

Kamiyama S, Miura T, Nara Y
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Thomas R, Ehrhart P, Roeckerath M, et al.
Liquid injection MOCVD of dysprosium scandate films - Deposition characteristics and high-k applications
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Niinisto J, Putkonen M, Niinisto L, et al.
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CHEMISTRY OF MATERIALS 19 (13): 3319-3324 JUN 26 2007

Kamiyama S, Miura T, Nara Y
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ELECTROCHEMICAL AND SOLID STATE LETTERS 10 (9): H278-H280 2007

Chiou YK, Chang CH, Wu TB
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JOURNAL OF MATERIALS RESEARCH 22 (7): 1899-1906 JUL 2007

Kamiyama, S., Miura, T., Nara, Y.
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Thomas R, Ehrhart P, Luysberg M, et al.
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APPLIED PHYSICS LETTERS 89 (23): Art. No. 232902 DEC 4 2006

Consiglio S, Papadatos F, Naczas S, et al.
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Kamiyama S, Miura T, Nara Y
Impact of O-3 concentration on ultrathin HfO2 films deposited on HF-cleaned silicon using atomic layer deposition with Hf[N(CH3)(C2H5)](4)
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (9): G285-G288 2006

Elliott SD, Scarel G, Wiemer C, et al.
Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism
CHEMISTRY OF MATERIALS 18 (16): 3764-3773 AUG 8 2006

Lehn JSM, Javed S, Hoffman DM
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CHEMICAL VAPOR DEPOSITION 12 (5): 280-284 MAY 2006

Park J, Park TJ, Cho MJ, et al.
Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
JOURNAL OF APPLIED PHYSICS 99 (9): Art. No. 094501 MAY 1 2006

Kim S, Kim J, Choi J, et al.
Remote plasma atomic layer deposition of HfO2 thin films using the alkoxide precursor Hf(mp)(4)
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (6): G200-G203 2006

Niinisto J, Putkonen M, Niinisto L, et al.
HfO2 films grown by ALD using cyclopentadienyl-type precursors and H2O or O-3 as oxygen source
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (3): F39-F45 2006

Kamiyama S, Miura T, Nara Y
Comparison of the electrical properties of poly-Si/Hf-silicate gate stacks fabricated by ALD employing BDMAS and TDMAS precursors
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (3): G187-G191 2006

Kamiyama S, Miura T, Nara Y
Impact of interface layer nitrogen concentration on HfO2/Hf-silicate/poly-Si-based MOSFET performance
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (12): G903-G906 2005

Hong, S.H., Park, T.J., Kim, J.H., Kim, S.K., Cho, M.J., Won, J.Y., Jeong, R.J., Hwang, C.S.
Influence of an in-situ formed interfacial SiNx layer on the electrical performance and thermal stability of high-k HfO2 films
ECS Transactions 1 (5), pp. 419-424 2005

Kim, J.H., Park, T.J., Hong, S.H., Seo, M., Hwang, C.S.
Influence of the deposition temperature of atomic-layerdeposited HFO 2 films on the chemical structure of interface and interface trap density
ECS Transactions 1 (5), pp. 257-266 2005

Kamiyama S, Miura T, Nara Y
Electrical properties of poly-Si/ALD Hf-silicate gate stacks with various controlled Hf/(Hf plus Si) composition ratios fabricated using Hf[N(CH3) (C2H5](4) and SiH[N(CH3)(2)](3) precursors
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (12): G355-G358 2005

Kamiyama S, Miura T, Nara Y
Ultrathin HfO2 films treated by xenon flash lamp annealing for use as transistor gate dielectric replacements
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (12): G367-G370 2005

Kamiyama S, Miura T, Nara Y
Electrical properties of ultrathin HfO2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf(N(CH3)(C2H5))(4) and O-3
APPLIED PHYSICS LETTERS 87 (13): Art. No. 132904 SEP 26 2005

Kamiyama S, Miura T, Nara Y
Comparison between Hf-silicate films deposited by ALD with BDMAS [SiH2(N(CH3)(2)] and TDMAS [SiH(N(CH3)(2))(3)] precursors
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (10): F37-F39 2005

Lee SW, Hong SH, Park J, et al.
Fabrication of HfO2 thin-film capacitors with a polycrystalline Si gate electrode and a low interface trap density
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (9): F32-F35 2005

Kamiyama S, Miura T, Nara Y, et al.
Atomic layer deposition of hafnium silicate gate dielectric films using Hf[N (CH3)(C2H5)](4) and SiH[N(CH3)(2)](3) precursors
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (8): G215-G217 2005

Puurunen RL
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 121301 JUN 15 2005

Triyoso DH, Hegde RI, White BE, et al.
Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis(ethylmethylaminohafnium)
JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 124107 JUN 15 2005

Park J, Cho M, Kim SK, et al.
Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density
APPLIED PHYSICS LETTERS 86 (11): Art. No. 112907 MAR 14 2005

122. Jaehoo Park, Moonju Cho, Hong Bae Park, Tae Joo Park, Suk Woo Lee, Sug Hun Hong, Doo Seok Jeong, Chihoon Lee, and Cheol Seong Hwang, "Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics", Appl. Phys. Lett., 85(24), 5965-5967 (2004) - Dec [10]

Hein, M.P., Zakhidov, A.A., Lussem, B., et al.
Molecular doping for control of gate bias stress in organic thin film transistors
Applied Physics Letters Volume 104, Issue 1, Article number 013507, 6 January 2014

Fukuda, K., Suzuki, T., Kobayashi, T., Kumaki, D., & Tokito, S.
Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics
PHYSICA STATUS SOLIDI A 2013

Fukuda, Kenjiro; Suzuki, Tatsuya; Kumaki, Daisuke; et al.
Reverse DC bias stress shifts in organic thin-film transistors with gate dielectrics using parylene-C
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Volume: 209 Issue: 10 Pages: 2073-2077 DOI: 10.1002/pssa.201228219 Published: OCT 2012

Cho DY, Jung HS, Hwang CS
Structural properties and electronic structure of HfO2-ZrO2 composite films
PHYSICAL REVIEW B 82 9 SEP 13 2010

Jung HS, Kim JH, Lee J, et al.
Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO2 Gate Dielectrics and Metal Gate
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157 3 H355-H360 2010

Kang JG, Kim DY, Chang KJ
Reliability issues and role of defects in high-k dielectric HfO2 devices
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 50 (3): 552-557 MAR 2007

Goldmann C, Krellner C, Pernstich KP, et al.
Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density
JOURNAL OF APPLIED PHYSICS 99 (3): Art. No. 034507 FEB 1 2006

Sekitani T, Iba S, Kato Y, et al.
Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effects
APPLIED PHYSICS LETTERS 87 (7): Art. No. 073505 AUG 15 2005

Lee SW, Hong SH, Park J, et al.
Fabrication of HfO2 thin-film capacitors with a polycrystalline Si gate electrode and a low interface trap density
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (9): F32-F35 2005

Park J, Cho M, Kim SK, et al.
Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density
APPLIED PHYSICS LETTERS 86 (11): Art. No. 112907 MAR 14 2005

123. Woo Young Park and Cheol Seong Hwang, Film thickness dependent Curie-Weiss behaviors of (Ba,Sr)TiO3 thin film capacitors having Pt electrodes, Appl. Phys. Lett., 85(22) 5313 (2004) - Nov [19]

Levasseur, D., El-Shaarawi, H. B., Pacchini, S., Rousseau, A., Payan, S., Guegan, G., & Maglione, M.
Systematic investigation of the annealing temperature and composition effects on the dielectric properties of sol–gel BaxSr1−xTiO3 thin films
Journal of the European Ceramic Society. 2012

Stognij, A. I.; Novitskii, N. N.; Evdokimov, A. A.; et al
Ba0.8Sr0.2TiO3 ferroelectric nanofilms on silicon buffered with a TiO2 layer
INORGANIC MATERIALS Volume: 48 Issue: 6 Pages: 619-621 DOI: 10.1134/S0020168512060192 Published: JUN 2012

Su, Y., Chen, H., Li, J.J., Soh, A.K., Weng, G.J.
Effects of surface tension on the size-dependent ferroelectric characteristics of free-standing BaTiO3 nano-thin films
Journal of Applied Physics 110 (8), art. no. 084108 2011

Bastani, Y., Schmitz-Kempen, T., Roelofs, A., Bassiri-Gharb, N.
Critical thickness for extrinsic contributions to the dielectric and piezoelectric response in lead zirconate titanate ultrathin films
Journal of Applied Physics 109 (1), art. no. 014115 2011

Schmelzer S, Brauhaus D, Hoffmann-Eifert S, et al.
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APPLIED PHYSICS LETTERS 97 13 SEP 27 2010

Yang LH, Wang GS, Dong XL, et al.
Unusual Curie Point Independence of Thickness and Interfacial Properties for Perfectly (111)-Oriented Ba0.6Sr0.4TiO3 Thin Films
JOURNAL OF THE AMERICAN CERAMIC SOCIETY 93 9 2526-2529 SEP 2010

Sakamoto N, Yoshioka H, Suzuki J, et al.
Effect of bottom electrode structure on electrical properties of BaTiO3 thin films fabricated by CSD method
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN Volume: 118 Issue: 1380 Pages: 669-673 AUG 2010

Mayama H, Naito T
Correlation between Curie temperature and system dimension
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 41 10 1878-1881 OCT 2009

Doan TM, Lu L, Lai MO
Thickness dependence of structure, tunable and pyroelectric properties of laser-ablated Ba(Zr0.25Ti0.75)O-3 thin films
JOURNAL OF PHYSICS D-APPLIED PHYSICS 43 3 035402 JAN 27 2010

Jie, W., Zhang, Y.
Influence of growth temperature on the microstructure and dielectric pro-perties of Ba (Zr0.2Ti0.8) O3 thin films on single crystal oxide substrates
Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society 37 (8), pp. 1424-1428 2009

Mukhortov VM, Golovko YI, Zelenchuk PA, et al.
Barium-Strotium Titanate Based Ferroelectric Heterostructures
INTEGRATED FERROELECTRICS 107 83-91 2009

Moreira ML, Andres J, Longo VM, et al.
Photoluminescent behavior of SrZrO3/SrTiO3 multilayer thin films
CHEMICAL PHYSICS LETTERS 473 4-6 293-298 MAY 12 2009

Wang, J., Xiang, J., Bai, L., Liu, T., Yang, G., Zhang, T.J.
Microstructure, dielectric and optical properties of compositionally graded Ba1-xSrxTiO3 thin film
Journal of Materials Science: Materials in Electronics 20 (1), pp. 44-48, 2008

Wang, J., Zhang, T., Xiang, J., Li, W., Duo, S., Li, M.
Studies of BaTiO3 thin films on different bottom electrode
Journal of Materials Science: Materials in Electronics 20 (1), pp. 44-48, 2009

Golovko, Yu.I., Mukhortov, V.M., Yuzyuk, Yu.I., Janolin, P.E., Dkhil, B.
Structural phase transitions in nanosized ferroelectric barium strontium titanate films
Physics of the Solid State 50 (3), pp. 485-489 2008

Song, S., Zhai, J., Yao, X.
Effects of buffer layer on the dielectric properties of BaTiO3 thin films prepared by sol-gel processing
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 145 (1-3), pp. 28-33 2007

Zhang TJ, Wang J, Zhang BS, et al.
Preparation and dielectric properties of compositionally graded (Ba,Sr)TiO3 thin film by sol-gel technique
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA 16: S119-S122 Part A Sp. Iss. 1 JUN 2006

Zhu XH, Zheng DN, Zeng H, et al.
Effects of growth temperature and film thickness on the electrical properties of Ba0.7Sr0.3TiO3 thin films grown on platinized silicon substrates by pulsed laser deposition
THIN SOLID FILMS 496 (2): 376-382 FEB 21 2006

Regnery S, Ding Y, Ehrhart P, et al.
Metal-organic chemical-vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111)
JOURNAL OF APPLIED PHYSICS 98 (8): Art. No. 084904 OCT 15 2005

124. Yo-Sep Min, Young Jin Cho and Cheol Seong Hwang, "Amorphous high dielectric constant Bi1-x-yTixSiyOz Thin Films by ALD", Electrochem and Solid State Lett., 7 (12) F85 (2004) - Dec [6]

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (11): H915-H918 2007

Nilsen, O., Lie, M., Fjellvåg, H.F., Kjekshus, A.
Growth of oxides with complex stoichiometry by the ALD technique, exemplified by growth of La1-xCaxMnO3
Topics in Applied Physics 106, pp. 87-99 2006

Min YS, Asanov IP, Hwang CS
Effect of alumina addition on Bi-Ti-Al-O dielectric thin films
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (7): G231-G235 2006

Hwang GW, Kim WD, Min YS, et al.
Characteristics of amorphous Bi2Ti2O7 thin films grown by atomic layer deposition for memory capacitor applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (1): F20-F26 2006

Min YS, Cho YJ, Ko JH, et al.
Atomic layer deposition of Bi1-x-yTixSiyOz thin films from alkoxide precursors and water
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (9): F124-F128 2005

Min YS, Cho YJ, Hwang CS
Atomic layer deposition of Al2O3 thin films from a 1-methoxy-2-methyl-2-propoxide complex of aluminum and water
CHEMISTRY OF MATERIALS 17 (3): 626-631 FEB 8 2005

125. Chihoon Lee, Cheol Seong Hwang, and Hyeong Joon Kim, "Comparison of the electrical properties of high-k gate dielectric (HfO2 and Al2O3) films with Pt or n(+)-polycrystalline-silicon gate", Integrated Ferroelectrics, 67, 49-57 (2004) [2]

Miikkulainen, Ville; Leskela, Markku; Ritala, Mikko; et al.
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JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 2 Article Number: 021301 Published: JAN 14 2013

Puurunen RL
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JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 121301 JUN 15 2005

126. Sang Yeol Kang, Sang Yong No, Jung-Hae Choi, Cheol Seong Hwang and Hyeong Joon Kim, "Pt-doped Ru films prepared by CVD as electrodes for DRAM capacitors ", Electrochemical and Solid State Lett., 8 (1), C12-C14 (2005) - Jan [6]

Kim, J.-H., Ahn, J.-H., Kang, S.-W., Roh, J.-S., Kwon, S.-H., Kim, J.-Y.
Thermal stability of RuO 2 thin films prepared by modified atomic layer deposition
Current Applied Physics 12 (SUPPL. 2) , pp. S160-S163 2012

Park, Y.J., Lee, D.R., Baik, S.
In-situ synchrotron radiation x-ray scattering study on the initial structure of atomic layer deposition
AIP Conference Proceedings 1399 , pp. 211-212 2011

Lee WK, Wong HY, Chan KY, et al
Effects of laser fluence on the structural properties of PLD Ru thin films
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 100 Issue: 2 Special Issue: Sp. Iss. SI Pages: 561-568 AUG 2010

Kim, W.-H., Park, S.-J., Kim, D.Y., Kim, H
Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas
Journal of the Korean Physical Society 55 (1), pp. 32-37 2009

Kim, W.-H., Park, S.-J., Son, J.-Y., Kim, H.
Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition
Nanotechnology 19 (4), art. no. 045302 2008

Park SJ, Kim WH, Lee HBR, et al.
Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
MICROELECTRONIC ENGINEERING 85 1 Sp. Iss. SI 39-44 JAN 2008

127. Sang Yeol Kang, Cheol Seong Hwang and Hyeong Joon Kim, Improvements in growth behavior of CVD Ru films on film substrates for memory capacitor integration ,J. Electrochem. Soc., 152 (1), C15-C19 (2005) - Jan [36]

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Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
COORDINATION CHEMISTRY REVIEWS Volume: 257 Issue: 23-24 Special Issue: SI Pages: 3154-3176 Published: DEC 2013

Tuchscherer, A., Georgi, C., Roth, N., Schaarschmidt, D., Ruffer, T., Waechtler, T., Schulz, S.E., (...), Lang, H.
Ruthenocenes and half-open ruthenocenes: Synthesis, characterization, and their use as CVD precursors for ruthenium thin film deposition
European Journal of Inorganic Chemistry (30) , pp. 4867-4876 2012

Shin, D.C., Kim, M.R., Lee, J.H., Choi, B.H., Lee, H.K.
Thermal stability of atomic layer deposited Ru layer on Si and TaN/Si for barrier application of Cu interconnection
Journal of Nanoscience and Nanotechnology 12 (7) , pp. 5631-5637 2012

Over, H.
Surface chemistry of ruthenium dioxide in heterogeneous catalysis and electrocatalysis: From fundamental to applied research
Chemical Reviews 112 (6) , pp. 3356-3426 2012

Kim, J.-Y., Kil, D.-S., Kim, J.-H., Kwon, S.-H., Ahn, J.-H., Roh, J.-S., Park, S.-K.
Ru films from bis(ethylcyclopentadienyl)ruthenium using ozone as a reactant by atomic layer deposition for capacitor electrodes
Journal of the Electrochemical Society 159 (6) , pp. H560-H564 2012

Song, S.I., Choi, B.H., Lee, J.H., Lee, H.K.
Diffusion barrier properties of atomic-layer-deposited iridium thin films on Cu/Ir/Si structures
Journal of the Korean Physical Society 60 (10) , pp. 1521-1525 2012

Han, J.H., Lee, S.W., Kim, S.K., Han, S., Lee, W., Hwang, C.S., Dussarat, C., Gatineau, J.
Study on initial growth behavior of RuO 2 film grown by pulsed chemical vapor deposition: Effects of substrate and reactant feeding time
Chemistry of Materials 24 (8) , pp. 1407-1414 2012

Kukli, K., Aarik, J., Aidla, A., Jogi, I., Arroval, T., Lu, J., Sajavaara, T., (...), Thompson, D.M.
Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen
Thin Solid Films 520 (7) , pp. 2756-2763 2012

Kukli Kaupo; Kemell Marianna; Lu Jun; et al.
Atomic Layer Deposition of Ruthenium Films on Strontium Titanate
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 11 (9), pp.8378-8382 2011

Bum Ho Choi, Jong Ho Lee, Hong Kee Lee and Joo Hyung Kim
Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier
Applied Surface Science Volume 257, Issue 22,Pages 9654-9660.1 September 2011

Leick, N., Verkuijlen, R.O.F., Lamagna, L., Langereis, E., Rushworth, S., Roozeboom, F., Van De Sanden, M.C.M., Kessels, W.M.M.
Atomic layer deposition of Ru from CpRu (CO)2 et using O 2 gas and O2 plasma
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 29 (2), art. no. 021016 2011

Kukli, K., Kemell, M., Puukilainen, E., Aarik, J., Aidla, A., Sajavaara, T., Laitinen, M., (...), Leskela, M.
Atomic layer deposition of ruthenium films from (ethylcyclopentadienyl) (pyrrolyl)ruthenium and oxygen
Journal of the Electrochemical Society 158 (3), pp. D158-D165 2011

Lim, Y.H., Yoo, H., Choi, B.H., Lee, J.H., Lee, H.-N., Lee, H.K.
Diffusion barrier properties of atomic layer deposited iridium thin films on the Cu/Ir/Si structure
2010 10th IEEE Conference on Nanotechnology, NANO 2010 , art. no. 5697930, pp. 594-597 2010

Vasilyev, V.Yu.
Low-temperature pulsed CVD of thin layers of metallic ruthenium for microelectronics and nanoelectronics. Part 3: Nucleation phenomena during the growth of ruthenium layers
Russian Microelectronics 39 (4), pp. 262-272 2010

Lee, W.-K., Wong, H.-Y., Chan, K.-Y., Tou, T.-Y.
Distribution of droplets on ruthenium thin films prepared by pulse nd:Yag laser
Informacije MIDEM 40 (2), pp. 88-92 2010

Kim SK, Lee SW, Han JH, et al.
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Park SK, Kanjolia R, Anthis J, et al.
Atomic Layer Deposition of Ru/RuO2 Thin Films Studied by In situ Infrared Spectroscopy
CHEMISTRY OF MATERIALS 22 17 4867-4878 SEP 14 2010

Lee HJ, Park MH, Min YS, et al.
Unusual growth behavior of ALD PbTiO3 thin films using water and ozone as oxygen sources and their combination
JOURNAL OF PHYSICAL CHEMISTRY C Volume: 114 Issue: 29 Pages: 12736-12741 JUL 29 2010

Lee WK, Wong HY, Chan KY, et al
Effects of laser fluence on the structural properties of PLD Ru thin films
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 100 Issue: 2 Special Issue: Sp. Iss. SI Pages: 561-568 AUG 2010

Choi BH, Lim YH, Lee JH, et al
Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by PEALD
MICROELECTRONIC ENGINEERING Volume: 87 Issue: 5-8 Pages: 1391-1395 Published: MAY-AUG 2010

Kim SK, Han JH, Kim GH, et al
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CHEMISTRY OF MATERIALS Volume: 22 Issue: 9 Pages: 2850-2856 Published: MAY 11 2010

Kukli K, Aarik J, Aidla A, et al.
Structure and morphology of Ru films grown by ALD from 1-ethyl-1-methyl-ruthenocene
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Lazarz TS, Yang Y, Kumar N, et al.
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APPLIED PHYSICS LETTERS 95(24) 242112 2009

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157(1) pp. D35-D40 2010

Thom KM, Ekerdt JG
The effect of an iodine source on nucleation and film properties of Ru films deposited by chemical vapor deposition
THIN SOLID FILMS 518(1) pp. 36-42 2009

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Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
CHEMISTRY OF MATERIALS 21 12 2386-2396 JUN 23 2009

Park SJ, Kim WH, Maeng WJ, et al.
Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen
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Fan KM, Lai CS, Silva H, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155 11 H889-H894 2008

Choi H, Chang M, Jo M, et al.
Improved memory characteristics of Ge nanocrystals using a LaAlO3 buffer layer
ELECTROCHEMICAL AND SOLID STATE LETTERS 11(6) H154-H156 2008

Park SJ, Kim WH, Lee HBR, et al.
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MICROELECTRONIC ENGINEERING 85 (1) 39-44 2008

Heo JY, Lee SY, Eom D, et al.
Enhanced nucleation Behavior of atomic-layer-deposited ru film on low-k dielectrics afforded by UV-O-3 treatment
ELECTROCHEMICAL AND SOLID STATE LETTERS 11(2) G5-G8 2008

Kim BS, Kang SY, Seo HS, et al.
Improved nucleation Behavior of Ru thin films prepared by MOCVD on TiCl4 pretreated substrates
ELECTROCHEMICAL AND SOLID STATE LETTERS 10 (10): D113-D115 2007

Kim SK, Lee SY, Lee SW, et al.
Atomic layer deposition of Ru thin films using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a liquid injection system
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (2): D95-D101 2007

Sim JS, Zhao JS, Lee HJ, et al.
Characteristics of polycrystalline SrRuO3 thin-film bottom electrodes for metallorganic chemical-vapor-deposited Pb(Zr0.2Ti0.8)O-3 thin films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (11): C777-C786 2006

128. Tae Joo Park, Doo Seok Jung, Cheol Seong Hwang, Min Soo Park and Nam-Seok Kang, "Fabrication of ultrathin IrO2 top electrode for improving thermal stability of metal-insulator-metal field emission cathodes", Thin Solid Films, 471, 236 (2005) - Jan [10]

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APPLIED SURFACE SCIENCE Volume: 285 Pages: 324-330 Part: B Published: NOV 15 2013

Song, X.-L., Li, F.-H., Liang, Z.-H.
Study on stability and electricity catalytic properties of Ti/SnO 2+Sb 2O x/PbO 2 acid-proof anode
Rengong Jingti Xuebao/Journal of Synthetic Crystals 41 (3) , pp. 809-815+820 2012

Mahmoud, S.A., Al-Shomar, S.M., Akl, A.A.
Electrical characteristics and nanocrystalline formation of sprayed iridium oxide thin films
Advances in Condensed Matter Physics 2010, art. no. 518209 2010

Mahmoud SA, Akl AA, Al-Shomar SM
Effect of some preparative parameters on optical properties of spray deposited iridium oxide thin films
PHYSICA B-CONDENSED MATTER 404 16 2151-2158 AUG 1 2009

Hamalainen J, Kemell M, Munnik F, et al.
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CHEMISTRY OF MATERIALS 20 (9) 2903-2907 2008

Wessling B, Mokwa W, Schnakenberg U
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155 (5) F61-F65 2008

Ishizeki K, Kuroki Y, Ueki M, et al.
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JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY 15 (1): 31-37 JAN 2007

Ishizeki, K., Kuroki, Y., Ueki, M., Sugawara, T., Yamazaki, A., Itou, Y., Fujii, Y.
Distinguished paper: A novel hermetic-sealing material for FED
Digest of Technical Papers - SID International Symposium 37 (4), pp. 1731-1734 2006

Vazquez-Gomez, L., Horvath, E., Kristof, J., Redey, A., De Battisti, A.
Investigation of IrO2-SnO2 thin film evolution from aqueous media
Applied Surface Science 253 (3), pp. 1178-1184 2006

Liang ZH, Zhang FY, Suh YP
Study of SnO2+Sb2O4 intermediate layer in non-noble metal Ti/MO2 anode
RARE METAL MATERIALS AND ENGINEERING 35 (10): 1605-1609 OCT 2006

129. Yo-Sep Min, Young Jin Cho, Igor P. Asanov, Jeong Hee Lee, Wan Don Kim and Cheol Seong Hwang, "Bi1-yTixSiyOz (BTSO) thin films for dynamic random access memory capacitor applications", Chemical Vapor Deposition, 11 (1), 38 (2005) - Jan [7]

Hatanpaa, Timo; Ritala, Mikko; Leskela, Markku
Precursors as enablers of ALD technology: Contributions from University of Helsinki
COORDINATION CHEMISTRY REVIEWS Volume: 257 Issue: 23-24 Special Issue: SI Pages: 3297-3322 Published: DEC 2013

Leskelä, M., Ritala, M., Nilsen, O.
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MRS Bulletin 36 (11), pp. 877-884 2011

Hwang GW, Kim WD, Hwang CS, et al.
Atomic layer deposition of Bi1-x-yTixSiyOz thin films using H2O oxidant and their characteristics depending on Si content
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (11): H915-H918 2007

Nilsen O, Lie M, Fjellvag HF, et al.
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TOPICS IN APPLIED PHYSICS 106: 87-99 2007

Min YS, Asanov IP, Hwang CS
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ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (7): G231-G235 2006

Hwang GW, Kim WD, Min YS, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (1): F20-F26 2006

Min YS, Cho YJ, Ko JH, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (9): F124-F128 2005

130. Yo-Sep Min, Young Jin Cho and Cheol Seong Hwang, "Atomic layer deposition of Al2O3 thin films from a 1-methoxy-2-methyl-2-propoxide complex of aluminum and water", Chemistry of Materials, 17, 626 (2005) - Jan [23]

Ponraj, Joice Sophia; Attolini, Giovanni; Bosi, Matteo
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CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES Volume: 38 Issue: 3 Pages: 203-233 Published: 2013

Miikkulainen, Ville; Leskela, Markku; Ritala, Mikko; et al.
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 2 Article Number: 021301 Published: JAN 14 2013

He, G., Sun, Z., Chen, H., Fang, Z., Chen, X., Wang, P., Shi, S., Liu, M.
Annealing-ambient-dependent thermal stability of ultrathin AlOxNy films grown by metalorganic chemical vapor deposition
Science of Advanced Materials 4 (10) , pp. 1078-1084 2012

Zhou, Wenhao; Leem, Jina; Park, Inhye; et al.
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JOURNAL OF MATERIALS CHEMISTRY Volume: 22 Issue: 45 Pages: 23935-23943 DOI: 10.1039/c2jm35553a Published: DEC 7 2012

Potts, Stephen E.; Dingemans, Gijs; Lachaud, Christophe; et al.
Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)(2)(mu-(OPr)-Pr-i)](2), as an alternative aluminum precursor
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 30 Issue: 2 Article Number: 021505 DOI: 10.1116/1.3683057 Published: FEB 2012

He, Gang; Sun, Zhaoqi; Shi, Shiwei; et al.
Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine-dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization
JOURNAL OF MATERIALS CHEMISTRY Volume: 22 Issue: 15 Pages: 7468-7477 DOI: 10.1039/c2jm16747f Published: 2012

Xingcun Li, Qiang Chen, Lijun Sang, Lizhen Yang, Zhongwei Liu, Zhenduo Wang
Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
Physics Procedia Volume 18, Pages 100-106 2011

Ingolf Monch, Joachim Schumann, Martin Stockmann, Karl-Friedrich Arndt and Oliver G Schmidt
Multifunctional nanomembranes self-assembled into compact rolled-up sensor–actuator devices
Smart Mater. Struct. 20 085016 doi: 10.1088/0964-1726/20/8/085016 2011

Min, Y.-S., Lee, I.H., Lee, Y.H., Hwang, C.S.
Botryoidal growth of crystalline ZnO nanoparticles on a forest of single-walled carbon nanotubes by atomic layer deposition
CrystEngComm 13 (10), pp. 3451-3454 2011

Lee HY, An CJ, Piao SAJ, et al.
Shrinking Core Model for Knudsen Diffusion-Limited Atomic Layer Deposition on a Nanoporous Monolith with an Ultrahigh Aspect Ratio
JOURNAL OF PHYSICAL CHEMISTRY C 114 43 18601-18606 NOV 4 2010

He G, Wang XL, Oshima M, et al.
MOCVD of Al2O3 thin films for Dimethylaluminumhydrida and O2
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 49 Issue: 3 Article Number: 031502 Part: Part 1 Published: 2010

Li LQ, Hu WP, Chi LF, et al.
Polymer brush and inorganic oxide hybrid nanodielectrics for high performance organic transistors
JOURNAL OF PHYSICAL CHEMISTRY B Volume: 114 Issue: 16 Pages: 5315-5319 Published: APR 29 2010

Baltrusaitis J, Jayaweera PM, Grassian VH
XPS study of nitrogen dioxide adsorption on metal oxide particle surfaces under different environmental conditions
PHYSICAL CHEMISTRY CHEMICAL PHYSICS 11 37 8295-8305 2009

Cheng CC, Chien CH, Luo GL, et al
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Wade CR, Silvernail C, Banerjee C, et al.
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Lu HL, Xu M, Ding SJ, et al.
X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates
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Mahurin S, Bao LL, Yan WF, et al.
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CURRENT ORGANIC CHEMISTRY 10 (9): 1021-1033 JUN 2006

Min YS, Asanov IP, Hwang CS
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ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (7): G231-G235 2006

Kim SK, Lee SW, Hwang CS, et al.
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (5): F69-F76 2006

Schumacher M, Baumann PK, Seidel T
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CHEMICAL VAPOR DEPOSITION 12 (2-3): 99-108 MAR 2006

Jang Y, Kim DH, Park YD, et al.
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APPLIED PHYSICS LETTERS 88 (7): Art. No. 072101 FEB 13 2006

Puurunen RL
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JOURNAL OF APPLIED PHYSICS 97 (12): Art. No. 121301 JUN 15 2005

131. Doo Seok Jeong, Hong Bae Park, and Cheol Seong Hwang, "Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic layer deposited HfO2 films", Appl. Phys. Lett., 86, 072903 (2005) - Feb [30]

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Solid-State Electronics Volume 79, Pages 248–252, January 2013

W. S. Lau
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ECS Journal of Solid State Science and Technology, 1 (6) N139-N148 2012

Fantini, P., Ferro, M., Calderoni, A., Brazzelli, S.
Disorder enhancement due to structural relaxation in amorphous Ge 2Sb 2Te 5
Applied Physics Letters 100 (21) , art. no. 213506 2012

Lau, W.S.
Mechanisms of difficulty to correlate the leakage current of high-k capacitor structures with defect states detected spectroscopically by the thermally stimulated current technique
Journal of the Electrochemical Society 159 (5) , pp. G67-G73 2012

Raj, P.M., Xiang, S., Kumar, M., Abothu, I.R., Hwang, J.-H., Liu, Y., Yamamoto, H., Tummala, R.
Leakage current suppression in solution-deposited barium titanate films on copper foils
Journal of Materials Science: Materials in Electronics 23 (4) , pp. 901-908 2012

Jin Ha, W., Chhajed, S., Jae Oh, S., Hwang, S., Kyu Kim, J.,Lee, J.-H., Kim, K.-S.
Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma
Applied Physics Letters100 (13) , art. no. 132104 2012

Jain, A., Palit, S., Alam, M.A.
A physics-based predictive modeling framework for dielectric charging and creep in RF MEMS capacitive switches and varactors
Journal of Microelectromechanical Systems 21 (2) , art. no. 6097005 , pp. 420-430 2012

Xudong Wang
Piezoelectric nanogenerators—Harvesting ambient mechanical energy at the nanometer scale
Nano Energy Available online 3 October 2011, ISSN 2211-2855, 10.1016/j.nanoen.2011.09.001. 2011

Zhang, L., Hsu, Y.-Y., Chen, F.T., Lee, H.-Y., Chen, Y.-S., Chen, W.-S., Gu, P.-Y., (...), Tsai, M.-J.
Experimental investigation of the reliability issue of RRAM based on high resistance state conduction
Nanotechnology 22 (25), art. no. 254016 2011

Yoshio Kanamori, Seiji Obata and Koichiro Saiki
Conductive Atomic Force Microscopy of Chemically Synthesized Graphene Oxide and Interlayer Conduction
Chemistry Letters Vol. 40 , No. 3 p.255 2011

Doo Seok Jeong, Goon-Ho Park, Hyungkwang Lim, Cheol Seong Hwang, Suyoun Lee and Byung-ki Cheong
Dc current transport behavior in amorphous GeSe films
Applied Physics A: Materials Science & Processing Volume 102, Number 4, 1027-1032, DOI: 10.1007/s00339-011-6283-6 2011

Lin, M.-H., Wu, M.-C., Lin, C.-H., Tseng, T.-Y.
Effects of vanadium doping on resistive switching characteristics and mechanisms of SrZrO3-based memory films
IEEE Transactions on Electron Devices 57 (8), art. no. 5483218, pp. 1801-1808 2010

R.G., Reed, J., Buu, C., Butler, R., Bersuker, G., Knowlton, W.B.
Limitations of Poole-Frenkel Conduction in Bilayer HfO2/SiO2 MOS devices
IEEE Transactions on Device and Materials Reliability 10 (2), art. no. 5361329, pp. 201-207 2010

An-Quan Jiang, Hyun Ju Lee, Cheol Seong Hwang, and Ting-Ao Tang
Resolving the Landauer paradox in ferroelectric switching by high-field charge injection
Phys. Rev. B 80, 024119 2009

An, Chee-Hong; Lee, Myung Soo; Choi, Ju-Yun; Kim, Hyoungsub;
Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration
Applied Physics Letters , vol.94, no.26, pp.262901-262901-3, Jun 2009

Garcia, H., Dueas, S., Castan, H., Gomez, A., Bailon, L., Toledano-Luque, M., Del Prado, A., Gonzalez-Diaz, G., et al.
Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
Journal of Applied Physics 104 (9), art. no. 094107 2 2008

Son, S.Y., Choi, Y.S., Kumar, P., Park, H.W., Nishida, T., Singh, R.K., Thompson, S.E.
Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors
Applied Physics Letters 93 (15), art. no. 153505 0 2008

Khan, M.A., Comyn, T.P., Bell, A.J.
Leakage mechanisms in bismuth ferrite-lead titanate thin films on PtSi substrates
Applied Physics Letters 92 (7), art. no. 072908 6 2008

Son, S.Y., Kumar, P., Lee, J.S., Cho, H., Jung, H.S., Min, K.J., Kang, C.J., Singh, R.K.
An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications
Electrochemical and Solid-State Letters 11 (4), pp. H81-H83 2 2008

Pan, S., Ding, S.-J., Huang, Y., Huang, Y.-J., Zhang, D.W., Wang, L.-K., Liu, R.
High-temperature conduction behaviors of HfO2 /TaN -based metal-insulator-metal capacitors
Journal of Applied Physics 102 (7), art. no. 073706 5 2007

Huang, Y.-J., Huang, Y., Ding, S.-J., Zhang, W., Liu, R.
Electrical characterization of metal-insulator-metal capacitors with atomic-layer-deposited HfO2 dielectrics for radio frequency integrated circuit application
Chinese Physics Letters 24 (10), pp. 2942-2944 2 2007

Yeh, C.-C., Ma, T.P., Ramaswamy, N., Rocklein, N., Gealy, D., Graettinger, T., Min, K.
Frenkel-Poole trap energy extraction of atomic layer deposited Al 2O3 and HfxAlyO thin films
Applied Physics Letters 91 (11), art. no. 113521 7 2007

Wolborski, M., Rooth, M., Bakowski, M., Halĺn, A.
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Naito, T., Tamura, C., Inumiya, S., Hasunuma, R., Yamabe, K.
Homogeneity improvements in the dielectric characteristics of HfSiON films by nitridation
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (5 B),pp. 3197-3201 6 2007

Mahapatra, R., Maikap, S., Ray, S.K.
Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures
Journal of Electroceramics 16 (4), pp. 545-548 1 2006

Eom, D., No, S.Y., Hwang, C.S., Kim, H.J.
Properties of aluminum nitride thin films deposited by an alternate injection of trimethylaluminum and ammonia under ultraviolet radiation
Journal of the Electrochemical Society 153 (4), pp. C229-C234 10 2006

Jeong, D.S., Hwang, C.S.
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Journal of Applied Physics 98 (11), art. no. 113701, pp. 1-8 12 2005

Jeong, D.S., Hwang, C.S.
Tunneling current from a metal electrode to many traps in an insulator
Physical Review B - Condensed Matter and Materials Physics 71 (16), pp. 1-10 2005

Lazareck, A.D., Cloutier, S.G., Kuo, T.-F., Taft, B.J., Kelley, S.O., Xu, J.M.
DNA-directed synthesis of zinc oxide nanowires on carbon nanotube tips
Nanotechnology 17 (10), pp. 2661-2664 2006

Tak, Y., Yong, K
Controlled growth of well-aligned ZnO nanorod array using a novel solution method
Journal of Physical Chemistry B 109 (41), pp. 19263-19269 2005

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Influence of rapid thermal annealing temperature on structure and electrical properties of high permittivity HfTiO thin film used in MOSFET
Microelectronics Reliability Volume 54, Issue 2, Pages 388–392, February 2014

Miikkulainen, Ville; Leskela, Markku; Ritala, Mikko; et al.
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 2 Article Number: 021301 DOI: 10.1063/1.4757907 Published: JAN 14 2013

Wang, Weichao; Chen, Shiyou; Yang, Ping-Xiong; et al.
Si:WO3 heterostructure for Z-scheme water splitting: an ab initio study
JOURNAL OF MATERIALS CHEMISTRY A Volume: 1 Issue: 4 Pages: 1078-1085 DOI: 10.1039/c2ta00441k Published: 2013

Chung, K.J., Park, T.J.,Sivasubramani, P., Kim, J., Ahn, J.
Impact of ozone concentration on atomic layer deposited HfO 2 on GaAs
Microelectronic Engineering 89 (1) , pp. 80-83 2012

Li, Yiming; Cheng, Hui-Wen
Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-kappa/Metal Gate Complementary Metal-Oxide-Semiconductor Device and Inverter Circuit
JAPANESE JOURNAL OF APPLIED PHYSICS  Volume: 51   Issue: 4 2012

K.J. Chunga, b, T.J. Parka, P. Sivasubramania, J. Kima, and J. Ahnb
Impact of ozone concentration on atomic layer deposited HfO2 on GaAs
Microelectronic Engineering, In Press, Corrected Proof, Available online 14 April 2011, ISSN 0167-9317, DOI: 10.1016/j.mee.2011.03.150. 2011

Park Tae Joo; Kim Jeong Hwan; Jang Jae Hyuck; et al.
Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor
CHEMISTRY OF MATERIALS Volume: 23 Issue: 7 Pages: 1654-1658 DOI: 10.1021/cm100900k Published: APR 12 2011

Wang Weichao; Xiong Ka; Gong Cheng; et al.
Si passivation effects on atomic bonding and electronic properties at HfO(2)/GaAs interface: A first-principles study
JOURNAL OF APPLIED PHYSICS Volume: 109 Issue: 6 Article Number: 063704 DOI: 10.1063/1.3554689 Published: MAR 15 2011

Lin M. H.; Hou C. H.; Wu J. Y.; et al.
Thermal Stability Improvement via Cyclic D(2)O Radical Anneal Interposed in Atomic Layer Deposition Process
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 158 Issue: 3 Pages: H221-H223 DOI: 10.1149/1.3526310 Published: 2011

Wang Weichao; Xiong Ka; Wallace Robert M.; et al.
Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO(2) Interfaces
JOURNAL OF PHYSICAL CHEMISTRY C Volume: 114 Issue: 51 Pages: 22610-22618 DOI: 10.1021/jp107880r Published: DEC 30 2010

Park TJ, Kim JH, Jang JH, et al.
Reduction of Electrical defects in ALD HfO2 films by Al doping
CHEMISTRY OF MATERIALS Volume: 22 Issue: 14 Pages: 4175-4184 Published: JUL 27 2010

Niinisto J, Mantymaki M, Kukli K, et al.
Growth and phase stabilization of HfO2 thin films by ALD using novel precursors
JOURNAL OF CRYSTAL GROWTH 312 2 245-249 JAN 1 2010

Rauwel E, Ducroquet F, Rauwel P, et al.
Effect of annealing and electrical properties of high-kappa thin films grown by atomic layer deposition using carboxylic acids as oxygen source
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 27 1 230-235 JAN-FEB 2009

Rauwel, E., Ducroquet, F., Rauwel, P., Willinger, M.-G., Matko, I., Kiselev, D., Pinna, N.
Carboxylic acids as oxygen supplying agents for atomic layer deposition of high-K thin films
ECS Transactions 16 (4) , pp. 279-289 2008

Nakashima H, Wang D, Sugimoto Y, et al
Electrical and structural evaluations of high-k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 23 (12) 125020 2008

Seo M, Min YS, Kim SK, et al.
Atomic layer deposition of hafnium oxide from tert-butoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability
JOURNAL OF MATERIALS CHEMISTRY 18 (36) 4324-4331 2008

Zhou Y, Kojima N, Sugiyama H, et al.
Preparation of ZrO2 ultrathin films as gate dielectrics by limited reaction sputtering - On growth delay time at initial growth stage
APPLIED SURFACE SCIENCE 254 (19) 6131-6134 2008

Park TJ, Kim JH, Jang JH, et al.
Effects of surface treatments using O-3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1-xGex/Si substrates
JOURNAL OF APPLIED PHYSICS 103 (8) 084117 2008

Park TJ, Kim JH, Jang JH, et al.
Influence of phase separation on electrical properties of ALD Hf-silicate films with various Si concentrations
ELECTROCHEMICAL AND SOLID STATE LETTERS 11 (5) H121-H123 2008

Katamreddy R, Inman R, Jursich G, et al.
Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O-3 and metal(diethylamino) precursors
JOURNAL OF MATERIALS RESEARCH 22 (12) 3455-3464 2007

Baldovino S, Spiga S, Scarel G, et al.
Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition
APPLIED PHYSICS LETTERS 91 (17): Art. No. 172905 OCT 22 2007

Park TJ, Kim JH, Jang JH, et al.
Comparison of electrical properties between HfO2 films on strained and relaxed Si1-xGex substrates
ELECTROCHEMICAL AND SOLID STATE LETTERS 10 (12): G97-G100 2007

Kim SK, Lee SY, Seo M, et al.
Impact of O-3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications
JOURNAL OF APPLIED PHYSICS 102 (2): Art. No. 024109 JUL 15 2007

Ahn HS, Han S, Hwang CS
Pairing of cation vacancies and gap-state creation in TiO2 and HfO2
APPLIED PHYSICS LETTERS 90 (25): Art. No. 252908 JUN 18 2007

Park TJ, Kim JH, Jang JH, et al.
Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer
MICROELECTRONIC ENGINEERING 84 (9-10): 2226-2229 SEP-OCT 2007

Cho M, Kim JH, Hwang CS, et al.
Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability
APPLIED PHYSICS LETTERS 90 (18): Art. No. 182907 APR 30 2007

Park TJ, Kim JH, Seo MH, et al.
Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O-3 pretreatment
APPLIED PHYSICS LETTERS 90 (15): Art. No. 152906 APR 9 2007

Sugimoto Y, Adachi H, Yamamoto K, et al.
Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 9 (6): 1031-1036 DEC 2006

Kamiyama S, Miura T, Nara Y
Impact of O-3 concentration on ultrathin HfO2 films deposited on HF-cleaned silicon using atomic layer deposition with Hf[N(CH3)(C2H5)](4)
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (9): G285-G288 2006

Song, S.-C., Zhang, Z., Huffman, C.,et al.
Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs
IEEE Transactions on Electron Devices 53 (5) , pp. 979-989 2006

Park J, Park TJ, Cho MJ, et al.
Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
JOURNAL OF APPLIED PHYSICS 99 (9): Art. No. 094501 MAY 1 2006

Kim SK, Lee SW, Hwang CS, et al.
Low temperature (< 100 degrees C) deposition of aluminum oxide thin films by ALD with O-3 as oxidant
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (5): F69-F76 2006

Luo Q, Hess DW, Rees WS
Effect of oxidant on downstream microwave plasma enhanced CVD of hafnium oxynitride films
CHEMICAL VAPOR DEPOSITION 12 (2-3): 181-186 MAR 2006

Novkovski N, Atanassova E
Wear-out of Al-Ta2O5/SiO2-Si structures under dynamic stress
APPLIED SURFACE SCIENCE 252 (10): 3833-3836 MAR 15 2006

Eom D, No SY, Hwang CS, et al.
Properties of aluminum nitride thin films deposited by an alternate injection of trimethylaluminum and ammonia under ultraviolet radiation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (4): C229-C234 2006

Kim, J.H., Park, T.J., Hong, S.H., Seo, M., Hwang, C.S.
Influence of the deposition temperature of atomic-layerdeposited HFO 2 films on the chemical structure of interface and interface trap density
ECS Transactions 1 (5) , pp. 419-424 2005

Niinisto J, Putkonen M, Niinisto L, et al.
HfO2 films grown by ALD using cyclopentadienyl-type precursors and H2O or O-3 as oxygen source
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (3): F39-F45 2006

Hong, S.H., Park, T.J., Kim, J.H., Kim, S.K., Cho, M.J., Won, J.Y., Jeong, R.J., Hwang, C.S.
Influence of an in-situ formed interfacial SiNx layer on the electrical performance and thermal stability of high-k HfO2 films
ECS Transactions 1 (5) , pp. 257-266 2005

Hong, S.H., Jang, J.H., Park, T.J., Jeong, D.S., Kim, M., Hwang, C.S.
Improvement of the current-voltage characteristics of a tunneling dielectric by barrier engineering by adopting an atomic-layer-deposited SiN layer for flash memory applications
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005, art. no. 1546698, pp. 517-520 2005

Hong SH, Jang JH, Park TJ, et al.
Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4/SiO2/Si3N4 multilayer for flash memory application
APPLIED PHYSICS LETTERS 87 (15): Art. No. 152106 OCT 10 2005

Lee SW, Hong SH, Park J, et al.
Fabrication of HfO2 thin-film capacitors with a polycrystalline Si gate electrode and a low interface trap density
ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (9): F32-F35 2005

133. Oh Seong Kwon, Seong Keun Kim, Moonju Cho, Cheol Seong Hwang, and Jaehack Jeong, "Chemically Conformal ALD of SrTiO3 Thin Films Using Conventional Metallorganic Precursors", J. Electrochem. Soc., 152(4), C229-C236 (2005) - Mar [43]

Longo, V.; Leick, N.; Roozeboom, F.; et al.
Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Volume: 2 Issue: 1 Pages: N15-N22 Published: 2013

Kim, Un Ki; Rha, Sang Ho; Kim, Jeong Hwan; et al.
Study on the defects in metal-organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis
JOURNAL OF MATERIALS CHEMISTRY C Volume: 1 Issue: 40 Pages: 6695-6702 Published: 2013

Zhao, Chao; Hedhili, M. N.; Li, Jingqi; et al.
Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
THIN SOLID FILMS Volume: 542 Pages: 38-44 Published: SEP 2 2013

Hatanpaa, Timo; Ritala, Mikko; Leskela, Markku
Precursors as enablers of ALD technology: Contributions from University of Helsinki
COORDINATION CHEMISTRY REVIEWS Volume: 257 Issue: 23-24 Special Issue: SI Pages: 3297-3322 Published: DEC 2013

Lee, Sang Woon; Choi, Byung Joon; Eom, Taeyong; et al.
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
COORDINATION CHEMISTRY REVIEWS Volume: 257 Issue: 23-24 Special Issue: SI Pages: 3154-3176 Published: DEC 2013

McDaniel, M.D., Posadas, A., Ngo, T.Q., Dhamdhere, A., Smith, D.J., Demkov, A.A., Ekerdt, J.G.
Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 31 (1) , art. no. 01A136 2013

Miikkulainen, V., Leskela, M., Ritala, M., Puurunen, R.L.
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
Journal of Applied Physics 113 (2) , art. no. 021301 2013

Panda, D., Tseng, T.-Y.
Growth, dielectric properties, and memory device applications of ZrO 2 thin films
Thin Solid Films 531 , pp. 1-20 2013

George, S.M., Park, B.K., Kim, C.G., Chung, T.-M.
Synthesis of heteroleptic strontium complexes containing substituted cyclopentadienyl and -diketonate ligands
Bulletin of the Korean Chemical Society 34 (3) , pp. 967-970 2013

Lee, W., Han, J.H., Jeon, W., Yoo, Y.W., Lee, S.W., Kim, S.K., Ko, C.-H., (...), Hwang, C.S.
Atomic layer deposition of SrTiO3 films with cyclopentadienyl-based precursors for metal-insulator-metal capacitors
Chemistry of Materials 25 (6) , pp. 953-961 2013

Q. Fang, C. Hodson, M. Liu, Z.W. Fang, R. Potter, R. Gunn
Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald
Physics Procedia, Volume 32, 2012, Pages 379–388 2012

Kim, J.-Y., Kil, D.-S.,Kim, J.-H., Kwon, S.-H.,Ahn, J.-H., Roh, J.-S.,Park, S.-K.
Ru films from bis(ethylcyclopentadienyl)ruthenium using ozone as a reactant by atomic layer deposition for capacitor electrodes
Journal of the Electrochemical Society159 (6) , pp. H560-H564 2012

Lee, W., Han, J.H., Lee, S.W., Han, S., Jeon, W.J., Hwang, C.S.
Controlling the initial growth behavior of SrTiO 3 films by interposing Al 2O 3 layers between the film and the Ru substrate
Journal of Materials Chemistry 22 (30) , pp. 15037-15044 2012

Osamu Tonomura et al.
Band Engineering of Ru/Rutile-TiO2/Ru Capacitors by Doping Cobalt to Suppress Leakage Current
J. Electrochem. Soc. 159, G1 2012

Norman John A. T.; Perez Melanie; Kim M. S.; et al.
New Volatile Strontium and Barium Imidazolate Complexes for the Deposition of Group 2 Metal Oxides
INORGANIC CHEMISTRY 50 (24), pp.12396-12398 2011

Profijt H. B.; Potts S. E.; van de Sanden M. C. M.; et al.
Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 29 Issue: 5 Article Number: 050801 DOI: 10.1116/1.3609974 Published: SEP 2011

Saly, M.J., Munnik, F., Winter, C.H.
The atomic layer deposition of SrB2O4 films using the thermally stable precursor bis(tris(pyrazolyl)borate)strontium
Chemical Vapor Deposition 17 (4-6), pp. 128-134 2011

Langereis, E., Roijmans, R., Roozeboom, F., Van De Sanden, M.C.M., Kessels, W.M.M.
Remote plasma ALD of SrTiO3 using cyclopentadienlyl-based Ti and Sr precursors
Journal of the Electrochemical Society 158 (2), pp. G34-G38 2011

Popovici, M., Van Elshocht, S., Menou, N., Favia, P., Bender, H., Rosseel, E., Swerts, J., (...), Kittl, J.A.
Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (1), pp. 01A3041-01A3046 2011

Brennecka GL, Ihlefeld JF, Maria JP, et al.
Processing Technologies for High-Permittivity Thin Films in Capacitor Applications
JOURNAL OF THE AMERICAN CERAMIC SOCIETY 93 12 3935-3954 DEC 2010

Saly MJ, Winter CH
Highly Distorted kappa(3)-N,N,H Bonding of Bis(3,5-di-tert-butylpyrazolyl)borate Ligands to the Heavier Group 2 Elements
ORGANOMETALLICS 29 21 5472-5480 NOV 8 2010

Kim SK, Lee SW, Han JH, et al.
Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory
ADVANCED FUNCTIONAL MATERIALS 20 18 2989-3003 SEP 23 2010

Saly MJ, Munnik F, Baird RJ, et al
Atomic Layer Deposition Growth of BaB2O4 Thin Films from an Exceptionally Thermally Stable Tris(pyrazolyl)borate-Based Precursor
CHEMISTRY OF MATERIALS 21 16 3742-3744 AUG 25 2009

Popovici M, Van Elshocht S, Menou N, et al.
Atomic Layer Deposition of Strontium Titanate Films Using Sr((Bu3Cp)-Bu-t)(2) and Ti(OMe)(4)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157 1 G1-G6 2010

Kim SK, Hoffmann-Eifert S, Waser R
Growth of Noble Metal Ru Thin Films by Liquid Injection Atomic Layer Deposition
JOURNAL OF PHYSICAL CHEMISTRY C Volume: 113 Issue: 26 Pages: 11329-11335 Published: JUL 2 2009

Kim SK, Hoffmann-Eifert S, Mi S, et al.
Liquid Injection Atomic Layer Deposition of Crystalline TiO2 Thin Films with a Smooth Morphology from Ti(O-i-Pr)(2)(DPM)(2)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 156 Issue: 8 Pages: D296-D300 Published: 2009

Saly MJ, Heeg MJ, Winter CH
Volatility, High Thermal Stability, and Low Melting Points in Heavier Alkaline Earth Metal Complexes Containing Tris(pyrazolyl)borate Ligands
INORGANIC CHEMISTRY Volume: 48 Issue: 12 Pages: 5303-5312 Published: JUN 15 2009

Lee JH, Son JY, Lee HBR, et al.
Supercritical Fluid Deposition of Conformal SrTiO3 Films with Composition Uniformity in Nanocontact Holes
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 12 Issue: 5 Pages: D45-D47 Published: 2009

Lee, S.W., Han, J.H., Kwon, O.S., Hwang, C.S.
Influences of a crystalline seed layer during atomic layer deposition of SrTiO3 thin films using Ti(O-iPr)2(thd)2, Sr(thd)2, and H2O
Journal of the Electrochemical Society 155 (11), pp. G253-G257 2008

Ahn, J.-H., Kang, S.-W., Kim, J.-Y., Kim, J.-H., Roh, J.-S.
Effect of Sr-ruthenate seed layer on dielectric properties of SrTiO 3 thin films prepared by plasma-enhanced atomic layer deposition
Journal of the Electrochemical Society 155 (10), pp. G185-G188 2008

Lee SW, Kwon OS, Han JH, et al.
Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications
APPLIED PHYSICS LETTERS 92 (22) 222903 2008

Kim SK, Choi GJ, Kim JH, et al.
Growth behavior of Al-doped TiO2 thin films by atomic layer deposition
CHEMISTRY OF MATERIALS 20 (11) 3723-3727 2008

Kim SK, Choi GJ, Hwang CS
Controlling the composition of doped materials by ALD: A case study for Al-doped TiO2 films
ELECTROCHEMICAL AND SOLID STATE LETTERS 11 (7) G27-G29 2008

Willis BG, Mathew A
Growth of ordered SrO layers on Si(100) using metal-organic surface reactions
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26 (1) 83-89 2008

Kim SK, Hwang CS
Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates
ELECTROCHEMICAL AND SOLID STATE LETTERS 11 (3) G9-G11 2008

Kwon OS, Lee SW, Han JH, et al.
Atomic layer deposition and electrical properties of SrTiO3 thin films grown using Sr(C11H19O2)(2), Ti(Oi-C3H7)(4), and H2O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (6): G127-G133 2007

Hwang GW, Lee HJ, Lee K, et al.
Atomic layer deposition and electrical properties of PbTiO3 thin films using metallorganic precursors and H2O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (3): G69-G76 2007

Watanabe, T., Hoffmann-Eifert, S., Mi, S., Jia, C., Waser, R., Hwang, C.S.
Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions
Journal of Applied Physics 101 (1), art. no. 014114 2007

Bhaskar, S., Allgeyer, D., Smythe III, J.A.
Depth profiling of dielectric SrTiO3 thin films by angle-resolved x-ray photoelectron spectroscopy
Applied Physics Letters 89 (25), art. no. 254103 2006

Nilsen, O., Lie, M., Fjellvag, H.F., Kjekshus, A.
Growth of oxides with complex stoichiometry by the ALD technique, exemplified by growth of La1-xCaxMnO3
Topics in Applied Physics 106, pp. 87-99 2006

Watanabe T, Hoffmann-Eifert S, Hwang CS, et al.
Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (9): F199-F204 2006

Hwang GW, Kim WD, Min YS, et al.
Characteristics of amorphous Bi2Ti2O7 thin films grown by atomic layer deposition for memory capacitor applications
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (1): F20-F26 2006

No SY, Oh JH, Jeon CB, et al.
Study on the step coverage of metallorganic chemical vapor deposited TiO2 and SrTiO3 thin films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 (6): C435-C441 2005

134. Seong Keun Kim, Cheol Seong Hwang, Sang-Hee Ko Park, Sun Jin Yun, "Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant", Thin Solid Films, 478, 103-108 (2005) - Apr [69]

Singh, Trilok; Lehnen, Thomas; Leuning, Tessa; et al.
Thickness dependence of optoelectronic properties in ALD grown ZnO thin films
APPLIED SURFACE SCIENCE Volume: 289 Pages: 27-32 Published: JAN 15 2014

Lee, Yueh-Lin; Chen, Shang-Fu; Ho, Chong-Lung; et al.
Effects of Oxygen Plasma Post-Treatment on Ga-Doped ZnO Films Grown by Thermal-Mode ALD
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Volume: 2 Issue: 7 Pages: P316-P320 Published: 2013

Lee, Yueh-Lin; Huang, Tzu-Hsuan; Ho, Chong-Lung; et al.
The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O-2-, and O-3-Based Atomic Layer Deposition
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Volume: 2 Issue: 9 Pages: Q182-Q186 Published: 2013

Miikkulainen, Ville; Leskela, Markku; Ritala, Mikko; et al.
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 2 Article Number: 021301 Published: JAN 14 2013

Lee, Byoung H.; Yoon, Byunghoon; Abdulagatov, Aziz I.; et al.
Growth and Properties of Hybrid Organic-Inorganic Metalcone Films Using Molecular Layer Deposition Techniques
ADVANCED FUNCTIONAL MATERIALS Volume: 23 Issue: 5 Pages: 532-546 Published: FEB 5 2013

Warner, Ellis J.; Cramer, Christopher J.; Gladfelter, Wayne L.
Atomic layer deposition of zinc oxide: Understanding the reactions of ozone with diethylzinc
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 31 Issue: 4 Article Number: 041504 Published: JUL-AUG 2013

Wu, Y.; Hermkens, P. M.; van de Loo, B. W. H.; et al.
Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition
JOURNAL OF APPLIED PHYSICS Volume: 114 Issue: 2 Article Number: 024308 Published: JUL 14 2013

Abou Chaaya, Adib; Viter, Roman; Bechelany, Mikhael; et al.
Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition
BEILSTEIN JOURNAL OF NANOTECHNOLOGY Volume: 4 Pages: 690-698 Published: OCT 28 2013

Kaariainen, M-L.; Weiss, C. K.; Ritz, S.; et al.
Zinc release from atomic layer deposited zinc oxide thin films and its antibacterial effect on Escherichia coil
APPLIED SURFACE SCIENCE Volume: 287 Pages: 375-380 Published: DEC 15 2013

Biener, Monika M.; Biener, Juergen; Wang, Yinmin M.; et al.
Atomic Layer Deposition-Derived Ultra-Low-Density Composite Bulk Materials with Deterministic Density and Composition
ACS APPLIED MATERIALS & INTERFACES Volume: 5 Issue: 24 Pages: 13129-13134 Published: DEC 25 2013

Kim, Ki-Wook; Sun, Kyung-Joo; Lee, Sung-Nam
Optical and electrical characterizations of ZnO film grown on c-plane sapphire by using atomic layer deposition
JOURNAL OF CERAMIC PROCESSING RESEARCH Volume: 13 Special Issue: 2 Pages: S291-S294 Published: NOV 2012

Yuan, H., Luo, B., Gladfelter, W.L., Campbell, S.A.
Ozone ALD of doped ZnO as a transparent metal
ECS Transactions 45 (3) , pp. 389-400 2012

Baji, Z., Labadi, Z., Horvath, Z.E., Molnar, G., Volk, J., Barsony, I., Barna, P.
Nucleation and growth modes of ALD ZnO
Crystal Growth and Design 12 (11) , pp. 5615-5620 2012

Galvez-Saldana, M., Montes-Albino, G., Perales-Perez, O.
Ferromagnetism in nanocrystalline powders and thin films of cobalt-vanadium co-doped zinc oxide
Materials Research Society Symposium Proceedings 1449 , pp. 135-140 2012

Zhu, C., Smith, D.J., Nemanich, R.J.
Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 30 (5) , art. no. 051807 2012

Cho, S., Kim, D.-H.,Lee, B.-S., Jung, J., Yu, W.-R., Hong, S.-H., Lee, S.
Ethanol sensors based on ZnO nanotubes with controllable wall thickness via atomic layer deposition, an O 2 plasma process and an annealing process
Sensors and Actuators, B: Chemical 162 (1) , pp. 300-306 2012

Qian, K.-J., Chen, S.,Zhu, B., Chen, L., Ding, S.-J., Lu, H.-L., Sun, Q.-Q., (...), Chen, Z.
Atomic layer deposition of ZnO on thermal SiO 2 and Si surfaces using N 2-diluted diethylzinc and H 2O 2 precursors
Applied Surface Science 258 (10) , pp. 4657-4666 2012

Yuan, H., Luo, B., Yu, D.,Cheng, A.-J., Campbell, S.A., Gladfelter, W.L.
Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 30 (1) , art. no. 01A138 2012

Illiberi, A., Roozeboom, F., Poodt, P.
Spatial atomic layer deposition of zinc oxide thin films
ACS Applied Materials and Interfaces 4 (1) , pp. 268-272 2012

Oh, B.-Y., Kim, J.-H., Han, J.-W., Seo, D.-S., Jang, H.S., Choi, H.-J., Baek, S.-H., (...), Kim, K.-Y.
Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells
Current Applied Physics 12 (1), pp. 273-279 2012

Janocha, E., Pettenkofer, C.
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Applied Surface Science 257 (23), pp. 10031-10035 2011

Tummala, R., Guduru, R.K., Mohanty, P.S.
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TMS Annual Meeting 1, pp. 143-150 2011

Lee Denz; Chen Yu Tzu
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Lee Daekyun; Choe Young-Jun; Choi Yeon Sun; et al.
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ANGEWANDTE CHEMIE-INTERNATIONAL EDITION Volume: 50 Issue: 6 Pages: 1332-1337 DOI: 10.1002/adfm.201001342 Published: 2011

Tummala, R., Guduru, R.K., Mohanty, P.S.
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Materials Research Bulletin 46 (8), pp. 1276-1282 2011

Kudrawiec, R., Misiewicz, J., Wachnicki, ., Guziewicz, E., Godlewski, M.
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Semiconductor Science and Technology 26 (7), art. no. 075012 2011

Knoops, H.C.M., Elam, J.W., Libera, J.A., Kessels, W.M.M.
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Chemistry of Materials 23 (9), pp. 2381-2387 2011

Yuan, H., Luo, B., Campbell, S.A., Gladfelter, W.L.
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Electrochemical and Solid-State Letters 14 (5), pp. H181-H183 2011

Lee, D.-J., Kim, H.-M., Kwon, J.-Y., Choi, H., Kim, S.-H., Kim, K.-B.
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APPLIED PHYSICS LETTERS 97 19 NOV 8 2010

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SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 24 Issue: 3 Article Number: 035015 Published: MAR 2009

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JOURNAL OF THE KOREAN PHYSICAL SOCIETY Volume: 54 Issue: 2 Pages: 678-681 Published: FEB 2009

Guziewicz, E., Godlewski, M., Kopalko, K., Kowalik, I.A., Yatsunenko, S., Osinnyi, V., Paszkowicz, W., Duzewski, P.
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Journal of the Korean Physical Society 53 (5 PART 2), pp. 2880-2883 2008

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Jeon, S., Bang, S., Lee, S., Kwon, S., Jeong, W., Jeon, H., Chang, H.J., Park, H.-H.
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Kim HJ, Jun JH, Choi DJ
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Wojcik A, Godlewski M, Guziewicz E, et al.
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APPLIED PHYSICS LETTERS 92 (2) 023502 2008

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ELECTROCHEMICAL AND SOLID STATE LETTERS 11 (1): H10-H14 2008

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ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (10): G299-G301 2006

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Justinas Palisaitis
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APPLIED PHYSICS LETTERS 89 (25): Art. No. 252118 DEC 18 2006

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Losurdo M, Giangregorio MM, Bruno G, et al.
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 (7): 1607-1611 MAY 2006

136. Jin Shi Zhao, Joon Seop Sim, Hyun Ju Lee, Dong-Yeon Park, and Cheol Seong Hwang, "A Study of Liquid Delivery MOCVD of Lead Oxide Thin Films on Pt and Ir Substrates", J. Electrochem. Soc., 152(5), C277-C282 (2005) - May [6]

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Journal of The Electrochemical Society, volume 153, issue 11 2006

Zhao, J.S., Sim, J.S., Lee, H.J., Park, D.-Y., Hwang, C.S.
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Electrochemical and Solid-State Letters 9 (2), pp. C29-C31 2006

Aggarwal S, Udayakumar KR, Rodriguez JA
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JOURNAL OF APPLIED PHYSICS 100 (6): Art. No. 064103 SEP 15 2006

Samoilenkov SV
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153 (5): F81-F86 2006

Harjuoja J, Putkonen M, Niinisto L
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THIN SOLID FILMS 497 (1-2): 77-82 FEB 21 2006

137. Moonju Cho, Hong Bae Park, Jaehoo Park, Suk Woo Lee, Cheol Seong Hwang, Jaehack Jeong, Hee Sung Kang, and Young Wook Kim, "Comparison of Properties of an Al2O3 Thin Layers Grown with Remote O2 Plasma, H2O, or O3 as Oxidants in an ALD Process for HfO2 Gate Dielectrics", J. Electrochem. Soc., 152(5), F49-F53 (2005) - May [20]

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J. Mater. Chem. C 2014

Henkel, K, Gargouri, H, Gruska, B, Arens, M, Tallarida, M, Schmeier, D
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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Volume 32, Issue 1 2014

Zaera, Francisco
Mechanisms of surface reactions in thin solid film chemical deposition processes
COORDINATION CHEMISTRY REVIEWS, 257, 23-24 2013

Rha, Sang Ho, Kim, Un Ki, Jung, Jisim, Hwang, Eun Suk, Lee, Seung Jun, Jean, Woojin, Yoo, Yeon Woo, Choi, Jung-Hae, Hwang, Cheol Seong
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31, 6 2013

Suh, D.; Liang, W. S.
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Miikkulainen, Ville, Leskela, Markku, Ritala, Mikko, Puurunen, Riikka L.
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
JOURNAL OF APPLIED PHYSICS, 113, 2 2013

Cheng, Yi-Lung, Chang, You-Ling, Hsieh, Cheng-Yang, Lin, Jian-Run
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ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2, 5 2013

Cheng, Yi-Lung, Chang, You-Ling, Hsieh, Cheng-Yang, Lin, Jian-Run
Comprehensive comparison of structural, electrical, and reliability characteristics of HfO2 gate dielectric with H2O or O-3 oxidant
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Liu, Y, Shen, S., Brillson, L.J., Gordon, R.G.
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Applied physics Letters Volume 98. Issue 12, 2011

Lee HJ, Park MH, Min YS, et al.
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A. Dkhissi, G. Mazaleyrat, A. Esteve and M. Djafari Rouhani
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138. Doo Seok Jeong and Cheol Seong Hwang, "Tunneling current from a metal electrode to many traps in an insulator", Phys. Rev. B, 71, 165327 (2005) - Apr [5]

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139. Sang Yong No, Jin Ho Oh, Chung Bae Jeon, Mathias Schindler, Cheol Seong Hwang, and Hyeong Joon Kim, "Study on the Step Coverage of Metallorganic Chemical Vapor Deposited TiO2 and SrTiO3 Thin Films", J. Electrochem. Soc., 152(6), C435-C441 (2005) - Jun [6]

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ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2, 9 2013

Jung, Kyubong, Zhao, Yu, Momose, Takeshi, Shimogaki, Yukihiro
Potential Step Coverage for Supercritical Fluid Deposition of TiO2 by Numerical Simulation and Microcavity Analysis
ECS SOLID STATE LETTERS, 2, 9 2013

Abelson, J.R.
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ECS transactions Volume 33, Issue 2, 2010

Kim SK, Lee SW, Han JH, et al.
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ELECTROCHEMICAL AND SOLID STATE LETTERS 12 5 D45-D47 2009

140. Christina Rohde, Byung Joon Choi, Doo Seok Jeong, Seol Choi, Jin-Shi Zhao, and Cheol Seong Hwang, "Identification of a determining parameter for resistive switching of TiO2 thin films", Appl. Phys. Lett., 86, 262907 (2005) - Jun [175]

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APPLIED PHYSICS LETTERS Volume: 103 Issue: 26 Article Number: 263505 Published: DEC 23 2013

Shao, Xing L., Zhao, Jin S., Zhang, Kai L., Chen, Ran, Sun, Kuo
Two-Step Reset in the Resistance Switching of the Al/TiOx/Cu Structure
ACS APPLIED MATERIALS & INTERFACES, 5, 21 2013

Fang, X., Yang, X., Wu, J., Yi, X.
A compact SPICE model of unipolar memristive devices
IEEE Transactions on Nanotechnology, Volume 12, Issue 5 2013

Nakano, Haruhisa, Takahashi, Makoto, Sato, Motonobu, Kotsugi, Masato, Muro, Takayuki, Nihei, Mizuhisa, Yokoyama, Naoki
Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe
JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 11, 1 2013

Xu Ding-Lin, Xiong Ying, Tang Ming-Hua, Zeng Bai-Wen, Xiao Yong-Guang, Wang Zi-Ping
Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO3 thin films
CHINESE PHYSICS B, 22, 11 2013

Zhao, Hongbin, Tu, Hailing, Wei, Feng, Zhang, Xinqiang, Xiong, Yuhua, Du, Jun
The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM
SOLID-STATE ELECTRONICS, 89, 12-16 2013

Huang, Jian-Shiou, Chen, Li-Ming, Lin, Ting-Yi, Lee, Chi-Young, Chin, Tsung-Shune
Nonpolar electrical switching behavior in Cu-Si(Cu)O-x-Pt stacks
THIN SOLID FILMS, 544 2013

Froehlich, K.
TiO2-based structures for nanoscale memory applications
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 16, 5 2013

Hirose, S., Niimi, H., Kageyama, K., Ando, A., Ieki, H., Omata, T.
Impact of the Electrical Forming Process on the Resistance Switching Behaviors in Lanthanum-Doped Strontium Titanate Ceramic Chip Devices
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 4 Article Number: 045802 Published: APR 2013

Kang, YH., Lee, TI., Moon, KJ., Moon, J., Hong, K., Cho, JH., Lee, W., Myoung, JM.
Observation of conductive filaments in a resistive switching nonvolatile memory device based on amorphous InGaZnO thin films
MATERIALS CHEMISTRY AND PHYSICS Volume: 138 Issue: 2-3 Pages: 623-627 Published: MAR 15 2013

Zhuo, VYQ., Jiang, Y., Li, MH., Chua, EK., Zhang, Z., Pan, JS., Zhao, R., Shi, LP., Chong, TC., Robertson, J
Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering
APPLIED PHYSICS LETTERS Volume: 102 Issue: 6 Article Number: 062106 Published: FEB 11 2013

Liu, CY., Huang, JJ., Lai, CH.
Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory
THIN SOLID FILMS Volume: 529 Pages: 107-110 Published: FEB 1 2013

Lai, CH., Liu, CY., Hsu, CH., Lee, YM., Lin, JS., Yang, HW.
Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films
THIN SOLID FILMS Volume: 529 Pages: 430-434 Published: FEB 1 2013

Zhang, Y., Duan, Z., Li, R., Ku, C.-J., Reyes, P.I., Ashrafi, A., Zhong, J., Lu, Y.
Vertically integrated ZnO-Based 1D1R structure for resistive switching
Journal of Physics D: Applied Physics 46 (14) , art. no. 145101, 2013

Park, C.-R., Choi, S.-Y., You, Y.-H., Yang, M.K., Bae, S.-M., Lee, J.-K., Hwang, J.-H.
Impedance spectroscopy characterization in bipolar Ta / MnOx/ Pt resistive switching thin films
Journal of the American Ceramic Society 96 (4) , pp. 1234-1239, 2013

Huang, J.-S., Lee, C.-Y., Chin, T.-S.
Forming-free bipolar memristive switching of ZnO films deposited by cyclic-voltammetry
Electrochimica Acta 91 , pp. 62-68, 2013

Kim, S.K., Kim, K.M., Jeong, D.S., Jeon, W., Yoon, K.J., Hwang, C.S.
Titanium dioxide thin films for next-generation memory devices
Journal of Materials Research 28 (3) , pp. 313-325, 2013

Baek, H., Lee, C., Choi, J., Cho, J.
Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films
Langmuir 29 (1) , pp. 380-386, 2013

YF Chang, YT Tsai, YE Syu, TC Chang
Study of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based Memristor
ECS Journal of Solid State Science and Technology, 1 (3) Q57-Q61 2012

YF Chang, YT Tsai, GW Chang, et al.
Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure
ECS Journal of Solid State Science and Technology, 1 (5) Q91-Q95 2012

CH Lai, CH Chen, TY Tseng
Resistive switching behavior of sol–gel deposited TiO< sub> 2 thin films under different heating ambience
Surface and Coatings Technology 2012

Ahn, Youngbae; Ryu, Seung Wook; Lee, Jong Ho; et al.
Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5
JOURNAL OF APPLIED PHYSICS  Volume: 112   Issue: 10     Article Number: 104105 2012

Lanza, M.; Bersuker, G.; Porti, M.; et al.
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
APPLIED PHYSICS LETTERS  Volume: 101   Issue: 19     Article Number: 193502 2012

Oh, Kiwon; Jeon, Woojin; Lee, Sang-Soo
One-Dimensional TiO2@Ag Nanoarchitectures with Interface-Mediated Implementation of Resistance-Switching Behavior in Polymer Nanocomposites
ACS APPLIED MATERIALS & INTERFACES  Volume: 4   Issue: 11   Pages: 5727-5731 2012

Chang, Y.-F., Chen, P.-Y., Chen, Y.-T., Xue, F., Wang, Y., Zhou, F., Fowler, B., Lee, J.C.
Study of polarity effect in SiO x-based resistive switching memory
Applied Physics Letters 101 (5) , art. no. 052111 2012

Ryu, S.W., Ahn, Y.B., Kim, H.J., Nishi, Y.
Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer
Applied Physics Letters 100 (13) , art. no. 133502 2012

Singh, B., Mehta, B.R., Varandani, D., Veronica Savu, A.,Brugger, J.
CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique
Nanotechnology 23 (49) , art. no. 495707 2012

Yu, S., Lee, B., Wong, H.-S.P.
Metal oxide resistive switching memory
Springer Series in Materials Science 149 (1) , pp. 303-335 2012

Li, H.-X., Ji, Z.-G., Xi, J.-H.
Effects of annealing temperatures on resistive switching characteristics of TiO2 based ReRAM
Wuji Cailiao Xuebao/Journal of Inorganic Materials 27 (10) , pp. 1063-1067 2012

Iglesias, V., Lanza, M., Bayerl, A., Porti, M., Nafria, M., Aymerich, X., Liu, L.F., (...), Shen, Z.Y.
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO 2/Pt structures
Microelectronics Reliability 52 (9-10) , pp. 2110-2114 2012

Liu, B., Zhang, Q.
Resistance switching characteristics of DC magnetron sputtered SnO 2 films
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology 32 (9) , pp. 779-783 2012

Yu, Q., Lim, W.M., Hu, S.G., Chen, T.P., Deng, L.J., Liu, Y.
Flexible nanoscale memory device based on resistive switching in Nickel Oxide thin film
Nanoscience and Nanotechnology Letters 4 (9) , pp. 940-943 2012

Qi, Jing; Olmedo, Mario; Ren, Jingjian; et al.
Resistive Switching in Single Epitaxial ZnO Nanoislands
ACS NANO  Volume: 6   Issue: 2   Pages: 1051-1058   DOI: 10.1021/nn204809a  Published: FEB 2012

Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; et al
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
THIN SOLID FILMS  Volume: 520   Issue: 8   Pages: 3415-3418   DOI:10.1016/j.tsf.2011.10.118   Published: FEB 1 2012

Yang, J. Joshua; Inoue, Isao H.; Mikolajick, Thomas; et al.
Metal oxide memories based on thermochemical and valence change mechanisms
MRS BULLETIN  Volume: 37   Issue: 2   Pages: 131-137   DOI:10.1557/mrs.2011.356   Published: FEB 2012

Shang, Da Shan; Shi, Lei; Sun, Ji-Rong; et al.
Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials
JOURNAL OF APPLIED PHYSICS  Volume: 111   Issue: 5     Article Number:053504   DOI: 10.1063/1.3691204   Published: MAR 1 2012

Lanza, M.; Zhang, K.; Porti, M.; et al.
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
APPLIED PHYSICS LETTERS  Volume: 100   Issue: 12     Article Number:123508   DOI: 10.1063/1.3697648   Published: MAR 19 2012

Pan, R. K.; Zhang, T. J.; Wang, J. Y.; et al.
Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell
THIN SOLID FILMS  Volume: 520   Issue: 11   Pages: 4016-4020   DOI:10.1016/j.tsf.2012.01.013   Published: MAR 30 2012

Prakash, Amit; Maikap, Siddheswar; Lai, Chao Sung; et al.
Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
JAPANESE JOURNAL OF APPLIED PHYSICS  Volume: 51   Issue: 4   Special Issue: SI     Article Number: 04DD06   DOI: 10.1143/JJAP.51.04DD06   Part: Part 2  Published: APR 2012

Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; et al.
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
SEMICONDUCTOR SCIENCE AND TECHNOLOGY  Volume: 27   Issue: 6    Article Number: 065010   DOI: 10.1088/0268-1242/27/6/065010   Published: JUN 2012

Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo; et al.
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE  Volume: 209   Issue: 6   Pages: 1179-1183   DOI: 10.1002/pssa.201127659  Published: JUN 2012

Wong, H.-S.P., Lee, H.-Y., Yu, S., Chen, Y.-S.,Wu, Y., Chen, P.-S.,Lee, B., (...), Tsai, M.-J.
Metal-oxide RRAM
Proceedings of the IEEE 100 (6) , art. no. 6193402 , pp. 1951-1970 2012

Miranda, M.A., Gomez-Polo, C., Gil, A.
Aging process of unipolar resistive switching in microscale cylindrical Fe-base alloy/TiO 2/Au-cells
Journal of Applied Physics 112 (3) , art. no. 034507 2012

Lv, Q., Wu, S., Lu, J., Yang, M., Hu, P., Li, S.
Conducting nanofilaments formed by oxygen vacancy migration in Ti/TiO 2/TiN/MgO memristive device
Journal of Applied Physics 110 (10), art. no. 104511 2011

Lv Hangbing; Tang Tingao
Performance improvement of Cu (x) O resistive switching memory by surface modification
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 102 Issue: 4 Special Issue: SI Pages: 1015-1018 2011

Chung Taek-Mo; Lee Sun Sook; Cho Wontae; et al.
Volatile Nickel Aminoalkoxide Complexes as Liquid Precursors for Non-volatile Memory Device of NiO Films by ALD
BULLETIN OF THE KOREAN CHEMICAL SOCIETY Volume: 32 Issue: 3 Pages: 783-784 2011

Okamoto Koichiro; Tada Munehiro; Ito Kimihiko; et al.
Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 50 Issue: 4 Special Issue: SI Article Number: 04DD13 2011

Shang Da-Shan; Shi Lei; Sun Ji-Rong; et al.
Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films
NANOTECHNOLOGY Volume: 22 Issue: 25 Special Issue: SI Article Number: 254008 2011

Kim Kyung Min; Jeong Doo Seok; Hwang Cheol Seong
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
NANOTECHNOLOGY Volume: 22 Issue: 25 Special Issue: SI Article Number: 254002 2011

Jung Seungjae; Kong Jaemin; Song Sunghoon; et al.
Resistive switching characteristics of solution-processed TiO(x) for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility
MICROELECTRONIC ENGINEERING Volume: 88 Issue: 7 Pages: 1143-1147 2011

Chang Yao-Feng; Chang Ting-Chang; Chang Chun-Yen
Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structure
JOURNAL OF APPLIED PHYSICS Volume: 110 Issue: 5 Article Number: 053703 2011

Liu Chih-Yi; Sung Po-Wei
Different Resistive Switching Characteristics of a Cu/SiO(2)/Pt Structure
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 50 Issue: 9 Article Number: 091101 2011

Xing Zhong-Wen; Chen X.; Wu N. J.; et al.
Bipolar resistive switching in Cr-doped TiO(x) thin films
CHINESE PHYSICS B Volume: 20 Issue: 9 Article Number: 097703 2011

Woo Jiyong; Jung Seungjae; Siddik Manzar; et al.
Effect of interfacial oxide layer on the switching uniformity of Ge(2)Sb(2)Te(5)-based resistive change memory devices
APPLIED PHYSICS LETTERS Volume: 99 Issue: 16 Article Number: 162109 2011

Tsai, Y.-T., Chang, T.-C., Huang, W.-L., Huang, C.-W., Syu, Y.-E., Chen, S.-C., Sze, S.M., (...), Tseng, T.-Y.
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
Applied Physics Letters 99 (9), art. no. 092106 2011

Jung, H.Y., Oh, S.C., Lee, H.
Resistive switching characteristics and failure analysis of TiO2 thin film deposited by RF magnetron sputtering system
Journal of the Electrochemical Society 158 (2), pp. H178-H182 2011

Tang M. H.; Wang Z. P.; Li J. C.; et al.
Bipolar and unipolar resistive switching behaviors of sol-gel-derived SrTiO(3) thin films with different compliance currents
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 26 Issue: 7 Article Number: 075019 2011

Zhuge, F Hu, B., He, C. et al.
Mechanism of nonvolatime resistive switching in graphene oxide thin films
Carbon 49 (12), 2011

Vandelli, L., Padovani, A., Bersuker,G. et al.
Modeling of the forming operation in HfO2-based resistive switching memories
2011 3rd IEEE international memory workshop, IMW 2011

Wei, G., Goto, Y. Ohta,A., et al.
Impact of annealing ambience on resistive switching in Pt/TiO2/Pt structure
IEICE Transactions on Electronics E94-C, 2011

Kim, W.G., Sung, M.G., Kim, S.J., Yoo, J.H., Youn, T.O., Oh, J.W., Kim, J.N, et al.
Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide; TiO2, ZrO2, and HfO2
2011, Journal of the Electrochemical Society 158 (4), pp. H417-H422 2011

Zhu, W., Chen, T.P., Yang, M., Liu, Y., Fung, S.
Temperature dependence of resistive switching in aluminum/anodized aluminum film structure
Nanoscience and Nanotechnology Letters 3 (2), pp. 222-225 2011

Hirose, S., Nakayama, A., Niimi, H., Kageyama, K., Takagi, H.
Improvement in resistance switching and retention properties of Pt/Ti O2 Schottky junction devices
Journal of the Electrochemical Society 158 (3), pp. H261-H266 2011

Zhang, H., Liu, L., Gao, B., Qiu, Y., Liu, X., Lu, J., Han, R.,et al.
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
Applied Physics Letters 98 (4), art. no. 042105 2011

Jung, H.Y., Oh, S.C., Lee, H.
Resistive switching characteristics and failure analysis of TiO2 thin film deposited by RF magnetron sputtering system
Journal of the Electrochemical Society 158 (2), pp. H178-H182 2011

Li, Y.-T., Long, S.-B., Lu, H.-B., Liu, Q., Wang, Q., Wang, Y., Zhang, S, et al.
Investigation of resistive switching behaviours in WO3-based RRAM devices
Chinese Physics B 20 (1), art. no. 017305 2011

Chang, K.M., Tzeng, W.H., Liu, K.C., Lai, W.R
Modulation of the electrical characteristics of HfOx/TiN RRAM devices through the top electrode metal
ECS Transactions 28 (2), pp. 119-126 2010

Chen, A.
Switching control of resistive switching devices
Applied Physics Letters 97 (26), art. no. 263505 2010

Liu, K.-C., Tzeng, W.-H., Chang, K.-M., Wu, C.-H.
The effect of plasma deposition on the electrical characteristics of Pt/HfOx/TiN RRAM device
Surface and Coatings Technology 205 (SUPPL. 1), pp. S379-S384 2010

Lee, H.D., Nishi, Y.
Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer
Applied Physics Letters 97 (25), art. no. 252107 2010

Kim, K.M., Kwon, D.-H., Jang, J.H., Lee, M.H., Song, S.J., Kim, G.H., Seok, J.Y. et al.
Identity of the conducting nano-filaments in TiO2 and the resistance switching mechanism of TiO2/NiO stacked layers
ECS Transactions 33 (3), pp. 291-298 2010

Akinaga, H., Shima, H.
Resistive random access memory (ReRAM) based on metal oxides
Proceedings of the IEEE 98 (12), art. no. 5607274, pp. 2237-2251 2010

Gao X, Guo HX, Xia YD, et al.
Unipolar resistive switching characteristics in Co3O4 films
THIN SOLID FILMS 519 1 450-452 OCT 29 2010

Chen SW, Wu JM
Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition
THIN SOLID FILMS 519 1 499-504 OCT 29 2010

Kim KM, Lee MH, Kim GH, et al.
Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model
APPLIED PHYSICS LETTERS 97 16 OCT 18 2010

Lin MH, Wu MC, Lin CH, et al.
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 57 Issue: 8 Pages: 1801-1808 Published: AUG 2010

Akou N, Asai T, Yanagida T, et al.
A behavioral model of unipolar resistive RAMs and its application to HSPICE integration
IEICE ELECTRONICS EXPRESS Volume: 7 Issue: 19 Pages: 1467-1473 Published: OCT 10 2010

Yang MK, Park JW, Ko TK, et al.
Resistive switching characteristics of TiN/MnO2/Pt memory devices
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Volume: 4 Issue: 8-9 Pages: 233-235 Published: SEP 2010

Lee SB, Kim A, Lee JS, et al.
Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping
APPLIED PHYSICS LETTERS Volume: 97 Issue: 9 Article Number: 093505 Published: AUG 30 2010

Li M, Zhuge F, Zhu XJ, et al.
Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches
NANOTECHNOLOGY Volume: 21 Issue: 42 Article Number: 425202 Published: OCT 22 2010

Wang ZQ, Li XH, Xu HY, et al.
Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film
JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 43 Issue: 38 Article Number: 385105 Published: SEP 29 2010

Kim GH, Kim KM, Seok JY, et al.
Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157 10 G211-G215 2010

Shin YC, Lee MH, Kim KM, et al.
Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Volume: 4 Issue: 5-6 Pages: 112-114 Published: JUN 2010

Tong WM, Yang JJ, Kuekes PJ, et al.
Radiation Hardness of TiO2 Memristive Junctions
IEEE TRANSACTIONS ON NUCLEAR SCIENCE Volume: 57 Issue: 3 Pages: 1640-1643 Part: Part 3 Published: JUN 2010

Lee HD, Magyari-Kope B, Nishi Y
Model of metallic filament formation and rupture in NiO for unipolar switching
PHYSICAL REVIEW B Volume: 81 Issue: 19 Article Number: 193202 Published: MAY 15 2010

Nagashima K, Yanagida T, Oka K, et al.
Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
NANO LETTERS Volume: 10 Issue: 4 Pages: 1359-1363 Published: APR 2010

Zhang HW, Gao B, Sun B, et al.
Ionic doping effect in ZrO2 resistive switching memory
APPLIED PHYSICS LETTERS Volume: 96 Issue: 12 Article Number: 123502 Published: MAR 22 2010

Kwon DH, Kim KM, Jang JH, et al.
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
NATURE NANOTECHNOLOGY 5 2 148-153 Feb 2010

Kang SO, Hong S, Choi J, et al.
Layer-to-island growth of electrodeposited Cu2O films and filamentary switching in single-channeled grain boundaries
JOURNAL OF APPLIED PHYSICS 107 5 Mar 2010

Song SJ, Kim KM, Kim GH, et al.
Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell
APPLIED PHYSICS LETTERS 96 11 Mar 2010

Chen SS, Yang CP, Xu LF, et al.
Electric-pulse-induced resistance switching in Nd0.7Sr0.3MnO3 ceramics
SOLID STATE COMMUNICATIONS 150 5-6 240-243 Jan 2010

Wan HJ, Zhou P, Ye L, et al.
In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching
IEEE ELECTRON DEVICE LETTERS 31 3 246-248 Mar 2010

Gu TK, Wang ZC, Tada T, et al.
First-principles simulations on bulk Ta2O5 and Cu/Ta2O5/Pt heterojunction: Electronic structures and transport properties
JOURNAL OF APPLIED PHYSICS 106 10 103713 NOV 15 2009

Yarmarkin VK, Shul'man SG, Lemanov VV
Resistive Switching in Au/TiO2/Pt Thin Film Structures
FERROELECTRICS 391 139-150 2009

Zhu W, Chen TP, Liu Z, et al.
Resistive switching in aluminum/anodized aluminum film structure without forming process
JOURNAL OF APPLIED PHYSICS 106 9 093706 NOV 1 2009

Tamura T, Ishibashi S, Terakura K, et al.
First-principles study of the rectifying properties of Pt/TiO2 interface
PHYSICAL REVIEW B Volume:80 Issue:19 Article Number:195302 Published: NOV 2009

Bogle KA, Bachhav MN, Deo MS, et al.
Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2
APPLIED PHYSICS LETTERS Volume: 95 Issue: 20 Article Number: 203502 Published: NOV 16 2009

Sokolov A, Sabirianov R, Sabirianov I, et al.
Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments
JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 21 Issue: 48 Article Number: 485303 Published: DEC 2 2009

Cao X, Li XM, Gao XD, et al.
Effects of the compliance current on the resistive switching behavior of TiO2 thin films
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 97 Issue: 4 Pages: 883-887 Published: DEC 2009

Kim WG, Rhee SW
Effect of post annealing on the resistive switching of TiO2 thin film
MICROELECTRONIC ENGINEERING Volume: 86 Issue: 11 Pages: 2153-2156 Published: NOV 2009

Buh GH, Hwang I, Park BH
Time-dependent electroforming in NiO resistive switching devices
APPLIED PHYSICS LETTERS Volume: 95 Issue: 14 Article Number: 142101 Published: OCT 5 2009

Go S, Jeong K, Lee K, et al.
Effects of Si interlayer on resistance switching of Pt/Si/TiO2/Pt structures
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 27 Issue: 5 Pages: 2175-2181 Published: SEP 2009

Hirose S, Nishimura H, Niimi H
Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with (100) similar to 45 degrees twist boundary
JOURNAL OF APPLIED PHYSICS 106 4 043714 AUG 15 2009

Lai CH, Liu CY, Tseng TY
Conduction Behavior of V-SrZrO3 Thin Film Showing Resistive Switching
FERROELECTRICS 385 21-26 2009

Chang WY, Cheng KJ, Tsai JM, et al.
Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals
APPLIED PHYSICS LETTERS 95 4 JUL 27 2009

Shi L, Shang DS, Sun JR, et al.
Electric field-induced resistance switching in (Bi2O3)(0.7)(Y2O3)(0.3) films
JOURNAL OF APPLIED PHYSICS Volume: 105 Issue: 8 Article Number: 083714 Published: APR 15 2009

Adachi Y, Kim SW, Kamiya T, et al.
Bistable resistance switching in surface-oxidized C12A7:e(-) single-crystal
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS Volume: 161 Issue: 1-3 Special Issue: Sp. Iss. SI Pages: 76-79 Published: APR 15 2009

Sasaki N, Kita K, Toriumi A, et al.
Observation of the Creation and Annihilation of Local Current Paths in HfO2 Thin Films on Pt by Ultrahigh-Vacuum Conductive Atomic Force Microscopy: Evidence of Oxygen Spill Over during the Forming Process
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 48 Issue: 6 Article Number: 060202 Part: Part 1 Published: JUN 2009

Zhong N, Shima H, Akinaga H
Switchable Pt/TiO2-x/Pt Schottky Diodes
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 48 Issue: 5 Special Issue: Part 2 Sp. Iss. SI Article Number: 05DF03 Part: Part 2 Sp. Iss. SI Published: MAY 2009

Lv HB, Wang M, Wan HJ, et al.
Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode
APPLIED PHYSICS LETTERS Volume: 94 Issue: 21 Article Number: 213502 Published: MAY 25 2009

Lee C, Kim I, Choi W, et al.
Resistive Switching Memory Devices Composed of Binary Transition Metal Oxides Using Sol-Gel Chemistry
LANGMUIR Volume: 25 Issue: 8 Pages: 4274-4278 Published: APR 21 2009

Choi J, Song J, Jung K, et al.
Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film
NANOTECHNOLOGY Volume: 20 Issue: 17 Article Number: 175704 Published: APR 29 2009

Shima H, Tamai Y
Oxide nanolayer improving RRAM operational performance
MICROELECTRONICS JOURNAL Volume: 40 Issue: 3 Special Issue: Sp. Iss. SI Pages: 628-632 Published: MAR 2009

Kim KM, Hwang CS
The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
APPLIED PHYSICS LETTERS Volume: 94 Issue: 12 Article Number: 122109 Published: MAR 23 2009

Yun J, Cho K, Park B, et al.
Resistance switching memory devices constructed on plastic with solution-processed titanium oxide
JOURNAL OF MATERIALS CHEMISTRY Volume: 19 Issue: 14 Pages: 2082-2085 Published: 2009

Cao X, Li XM, Yu WD, et al.
Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS Volume: 157 Issue: 1-3 Pages: 36-39 Published: FEB 15 2009

Seung Chul Chae, Jae Sung Lee, Sejin Kim, Shin Buhm Lee, Seo Hyoung Chang1, Chunli Liu, Byungnam Kahng, Hyunjung Shin, Dong-Wook Kim, Chang Uk Jung, Sunae Seo, Myoung-Jae Lee, Tae Won Noh
Random Circuit Breaker Network Model for Unipolar Resistance Switching
Advanced Materials Volume 20, Issue 6, pages 1154–1159 2008

Yao J, Zhong L, Natelson D, et al.
Etching-dependent reproducible memory switching in vertical SiO2 structures
APPLIED PHYSICS LETTERS Volume: 93 Issue: 25 Article Number: 253101 Published: DEC 22 2008

Kinoshita K, Okano A, Tsunoda K, et al.
Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature
APPLIED PHYSICS EXPRESS Volume: 1 Issue: 12 Article Number: 125001 Published: DEC 2008

Courtade, L., Turquat, Ch., Lisoni, J.G., Goux, L., Wouters, D.J., et al
Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer
ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference, art. no. 4681737, pp. 218-221 2008

Yarmarkin VK, Shulman SG, Lemanov VV
BIPOLAR RESISTIVE SWITCHING IN Au/TiO2/Pt THIN FILM STRUCTURES
INTEGRATED FERROELECTRICS Vol 100 p.274-284 2008

Yarmarkin VK, Shul'man SG, Lemanov VV
Resistive Switching in Au/TiO2/Pt Thin Film Structures on Silicon
PHYSICS OF THE SOLID STATE Vol 50 Issue 10 p.1841-1847 2008

Hirose S, Nakayama A, Niimi H, et al.
Resistance switching and retention behaviors in polycrystalline La-doped SrTiO3 ceramics chip devices
JOURNAL OF APPLIED PHYSICS Vol 104 Issue 5 Art. 053712 2008

W Guan, S Long, Q Liu, M Liu, W Wang
Nonpolar Nonvolatile Resistive Switching in Cu Doped $hbox{ZrO}_{2}$
Electron Device Letters, IEEE 29 (5) 434-437 2008

J Jo, H Choi, S Kang
Resistance increase in TiOx induced by annealing and voltage application
Thin Solid Films 516 (23) 8693-8696 2008

Hisashi Shima,Yukio Tamai
Oxide nanolayer improving RRAM operational performance
Microelectronics Journal 2008

Kyung Min Kim, Byung Joon Choi, Yong Cheol Shin, Seol Choi, and Cheol Seong Hwang
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
Appl. Phys. Lett. 91 012907 2007

Wu SX, Xu LM, Xing XJ, et al.
Reverse-bias-induced bipolar resistance switching in Pt/TiO2/SrTi0.99Nb0.01O3/Pt devices
APPLIED PHYSICS LETTERS 93 (4) 043502 2008

Yang JJ, Pickett MD, Li XM, et al.
Memristive switching mechanism for metal/oxide/metal nanodevices
NATURE NANOTECHNOLOGY 3 (7) 429-433 2008

Kinoshita K, Tsunoda K, Sato Y, et al.
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
APPLIED PHYSICS LETTERS 93 (3) 033506 2008

Yin M, Zhou P, Lv HB, et al.
Improvement of resistive switching in CuxO using new RESET mode
IEEE ELECTRON DEVICE LETTERS 29 (7) 681-683 2008

Park JW, Yang MK, Lee JK
Electrode dependence of bipolar resistive switching in SrZrO3 : Cr perovskite film-based memory devices
ELECTROCHEMICAL AND SOLID STATE LETTERS 11 (8) H226-H229 2008

Sun B, Liu LF, Han DD, et al.
Improved resistive switching characteristics of Ag-doped ZrO2 films fabricated by sol-gel process
CHINESE PHYSICS LETTERS 25 (6) 2187-2189 2008

Won S, Go S, Lee K, et al.
Resistive switching properties of Pt/TiO2/n(+)-Si ReRAM for nonvolatile memory application
ELECTRONIC MATERIALS LETTERS 4 (1) 29-33 2008

Wu SX, Liu YJ, Xing XJ, et al.
Surface reconstruction evolution and anatase formation in the process of oxidation of titanium nitride film
JOURNAL OF APPLIED PHYSICS 103 (6) 063517 2008

Yoshida C, Kurasawa M, Lee YM, et al.
Unipolar resistive switching in CoFeB/MgO/CoFeB magnetic tunnel junction
APPLIED PHYSICS LETTERS 92 (11) 113508 2008

Lv HB, Yin M, Fu XF, et al.
Resistive memory switching of CuxO films for a nonvolatile memory application
IEEE ELECTRON DEVICE LETTERS 29 (4) 309-311 2008

Inoue IH, Yasuda S, Akinaga H, et al.
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
PHYSICAL REVIEW B 77 (3) 035105 2008

Shang DS, Chen LD, Wang Q, et al.
Reversible multilevel resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures
JOURNAL OF MATERIALS RESEARCH 23 (2) 302-307 2008

Schindler C, Guo X, Besmehn A, et al.
Resistive switching in Ge0.3Se0.7 films by means of copper ion migration
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS 221 (11-12) 1469-1478 2007

Sakyo Hirose, Akinori Nakayama, Hideaki Niimi
Fabrication and Characterization of Colossal Electroresistance Chip Devices Composed of Polycrystalline Lanthanum-Doped Strontium Titanate and Palladium Electrodes
Journal of the American Ceramic Society Volume 91 Issue 2 Page 478-484, February 2008

Qi Liu, Weihua Guan, Shibing Long, Rui Jia, and Ming Liu
Resistive switching memory effect of ZrO2 films with Zr+ implanted
Appl. Phys. Lett. 92, 012117 2008

Hisashi Shima, Fumiyoshi Takano, Hidenobu Muramatsu, Hiro Akinaga, Isao H. Inoue, and Hidenori Takagi.
Control of resistance switching voltages in rectifying Pt/TiOx/Pt trilayer
Appl. Phys. Lett. 92, 043510 2008

Lv, H.B. Yin, M. Song, Y.L. Fu, X.F. Tang, L. Zhou, P. Zhao, C.H. Tang, T.A. Chen, B.A. Lin, Y.Y.
Forming Process Investigation of CuxO Memory Films
Electron Device Letters, IEEE Publication Date: Jan. Volume: 29, Issue: 1 On page(s): 47-49 2008

Courtade, L. Turquat, Ch. Muller, Ch. Lisoni, J.G. Wouters, D.J.
Improvement of resistance switching characteristics in NiO films obtained from controlled Ni oxidation
Non-Volatile Memory Technology Symposium, 2007. NVMTS '07 Publication Date: 10-13 Nov. On page(s): 1-4 2007

Chikako Yoshida, Kohji Tsunoda, Hideyuki Noshiro, and Yoshihiro Sugiyama
High speed resistive switching in Pt/TiO2 /TiN film for nonvolatile memory application
APPLIED PHYSICS LETTERS 2007

L Courtade, C Turquat, C Muller, JG Lisoni, L Goux
Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures
Thin Solid Films 2007

Lin CY, Wu CY, Wu CY, et al.
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
JOURNAL OF APPLIED PHYSICS 102 (9): Art. No. 094101 NOV 1 2007

Lee SB, Chae SC, Chang SH, et al.
Resistance switching in electroformed Pt/FeOx/Pt structures
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 51: S96-S99 Suppl. 2 OCT 2007

Lai CH, Tseng TY
Preparation and properties of perovskite thin films for resistive nonvolatile memory applications
FERROELECTRICS 357: 581+ 2007

Gyeong-Su Park and Xiang-Shu Li, Dong-Chirl Kim, Ran-Ju Jung, Myoung-Jae Lee, and Sunae Seo
Observation of electric-field induced Ni filament channels in polycrystalline NiO film
Appl. Phys. Lett. 91, 222103 2007

Chen A, Haddad S, Wu YC, et al.
Switching characteristics of Cu2O metal-insulator-metal resistive memory
APPLIED PHYSICS LETTERS 91 (12): Art. No. 123517 SEP 17 2007

Villafuerte M, Juarez G, de Heluani SP, et al.
Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films
PHYSICA B-CONDENSED MATTER 398 (2): 321-324 SEP 1 2007

Kim DW, Park BH, Jung R, et al.
Reversible resistance switching behaviors of Pt/NiO/Pt structures
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (8A): 5205-5207 AUG 2007

Shima H, Takano F, Akinaga H, et al.
Resistance switching in the metal deficient-type oxides: NiO and CoO
APPLIED PHYSICS LETTERS 91 (1): Art. No. 012901 JUL 2 2007

Kim KM, Choi BJ, Hwang CS
Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
APPLIED PHYSICS LETTERS 90 (24): Art. No. 242906 JUN 11 2007

Park IS, Kim KR, Lee S, et al.
Resistance switching characteristics for nonvolatile memory operation of binary metal oxides
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (4B): 2172-2174 APR 2007

Lee HY, Chen PS, Wang CC, et al.
Low-power switching of nonvolatile resistive memory using hafnium oxide
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (4B): 2175-2179 APR 2007

Niskanen A, Arstila K, Leskela M, et al.
Radical enhanced atomic layer deposition of titanium dioxide
CHEMICAL VAPOR DEPOSITION 13 (4): 152-157 APR 2007

Watanabe T, Hoffmann-Eifert S, Yang L, et al.
Liquid injection atomic layer deposition of TiOx films using Ti[OCH(CH3)(2)](4)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (6): G134-G140 2007

Lee D, Seong DJ, Jo I, et al.
Resistance switching of copper doped MoOx films for nonvolatile memory applications
APPLIED PHYSICS LETTERS 90 (12): Art. No. 122104 MAR 19 2007

Jung K, Seo H, Kim Y, et al.
Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
APPLIED PHYSICS LETTERS 90 (5): Art. No. 052104 JAN 29 2007

Park JW, Park JW, Lee JK
Characterization of sputter-deposited SrZrO3 : Cr films on Si substrates for commercial memory device applications
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49: S447-S451 Suppl. 2 DEC 2006

Jeong DS, Choi BJ, Hwang CS
Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view
JOURNAL OF APPLIED PHYSICS 100 (11): Art. No. 113724 DEC 1 2006

You YH, So BS, Hwang JH, et al.
Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition
APPLIED PHYSICS LETTERS 89 (22): Art. No. 222105 NOV 27 2006

Kinoshita K, Tamura T, Aoki M, et al.
Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxides
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 (37-41): L991-L994 OCT 2006

Kim KM, Choi BJ, Koo BW, et al.
Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (12): G343-G346 2006

Kim KM, Choi BJ, Jeong DS, et al.
Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes
APPLIED PHYSICS LETTERS 89 (16): Art. No. 162912 OCT 16 2006

Jung K, Seo H, Kim N, et al.
Temperature-dependent switching current of Cr-doped SrZrO3/SrRuO3 deposited for ReRAM applications by using PLD
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 (3): 1071-1075 Sp. Iss. SI SEP 2006

Kinoshita K, Tamura T, Aoki M, et al.
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
APPLIED PHYSICS LETTERS 89 (10): Art. No. 103509 SEP 4 2006

Jeon SH, Park BH, Lee J, et al.
First-principles modeling of resistance switching in perovskite oxide material
APPLIED PHYSICS LETTERS 89 (4): Art. No. 042904 JUL 24 2006

Choi BJ, Choi S, Kim KM, et al.
Study on the resistive switching time of TiO2 thin films
APPLIED PHYSICS LETTERS 89 (1): Art. No. 012906 JUL 3 2006

Shang DS, Wang Q, Chen LD, et al.
Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures
PHYSICAL REVIEW B 73 (24): Art. No. 245427 JUN 2006

Park JW
Resistive switching characteristics and set-voltage dependence of low-resistance state in sputter-deposited SrZrO3 : Cr memory films
JOURNAL OF APPLIED PHYSICS 99 (12): Art. No. 124102 JUN 15 2006

Courtade, L., Turquat, Ch., Muller, Ch., Lisoni, J.G., Goux, et al.
Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation
7th Annual Non-Volatile Memory Technology Symposium, NVMTS, art. no. 4228444, pp. 94-99 2006

141. Sang Woon Lee, Oh Seong Kwon and Cheol Seong Hwang, "Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O", Microelectronic Engineering, 80, 158-161 (2005) [10]

Hatanpaa, Timo, Ritala, Mikko, Leskela, Markku
Precursors as enablers of ALD technology: Contributions from University of Helsinki
COORDINATION CHEMISTRY REVIEWS, 257, 23-24 2013

Liu, J., Dong, X.-Z., Hao, B., Li, Y.
Preparation of SrTiO 3 functional ceramic thin film on glass wafers treated by piranha solution with liquid phase deposition method
Chinese Journal of Inorganic Chemistry 28 (5) , pp. 1065-1069 2012

Popovici, M., Van Elshocht, S., Menou, N., Favia, P., Bender, H., Rosseel, E., Swerts, J. et al.
Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (1), pp. 01A3041-01A3046 2011

Liu JA, Miao HY, Tan GQ, et al.
Preparation and Characterization of SrTiO3 Thin Film on Functional Organic Self-Assembled Monolayers
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION 25 3 365-369 JUN 10 2010

Kukli K, Aarik J, Aidla A, et al.
Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1 '-methyl-ruthenocene
JOURNAL OF CRYSTAL GROWTH 312 12-13 2025-2032 JUN 1 2010

Popovici M, Van Elshocht S, Menou N, et al.
Atomic Layer Deposition of Strontium Titanate Films Using Sr((Bu3Cp)-Bu-t)(2) and Ti(OMe)(4)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 157 Issue: 1 Pages: G1-G6 Published: 2010

Park TJ, Kim JH, Jang JH, et al.
Effects of Annealing Environment on Interfacial Reactions and Electrical Properties of Ultrathin SrTiO3 on Si
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 9 G129-G133 2009

Saly MJ, Heeg MJ, Winter CH
Volatility, High Thermal Stability, and Low Melting Points in Heavier Alkaline Earth Metal Complexes Containing Tris(pyrazolyl)borate Ligands
INORGANIC CHEMISTRY 48 12 5303-5312 JUN 15 2009

Lee JH, Son JY, Lee HBR, et al.
Supercritical Fluid Deposition of Conformal SrTiO3 Films with Composition Uniformity in Nanocontact Holes
ELECTROCHEMICAL AND SOLID STATE LETTERS 12 5 D45-D47 2009

Nilsen, O., Lie, M., Fjellvåg, H.F., Kjekshus, A.
Growth of oxides with complex stoichiometry by the ALD technique, exemplified by growth of La1-xCaxMnO3
Topics in Applied Physics 106, pp. 87-99 2006

142. Tae Joo Park, Seong Keun Kim, Jeong Hwan Kim, Jaehoo Park, Moonju Cho, Suk Woo Lee, Sug Hun Hong, and Cheol Seong Hwang, "Electrical properties of high-k HfO2 films on Si1-xGex substrates", Microelectronic Engineering, 80, 222-225 (2005) [12]

Han, J.-H., Zhang, R., Osada, T., Hata, M., Takenaka, M., Takagi, S.
Impact of plasma post-nitridation on HfO2/Al2O 3/SiGe gate stacks toward EOT scaling
Microelectronic Engineering, Volume 109, Pages 266-269 2013

Soares, G.V., Krug, C., Miotti, L., Bastos, K.P., Lucovsky, G., Baumvol, I.J.R., Radtke, C.
Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate
Applied Physics Letters 98 (13), art. no. 131912 2011

Liu YR, Deng LF, Yao RH, et al.
Low-Operating-Voltage Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene) With Hafnium Oxide as the Gate Dielectric
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 10 2 233-237 JUN 2010

Deng LF, Tang WM, Leung CH, et al.
Pentacene Thin-Film Transistors with HfO2 Gate Dielectric Annealed in NH3 or N2O
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS Pages: 443-446 Published: 2008

Li, C.X., Zou, X., Lai, P.T., Xu, J.P., Chan, C.L.
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Microelectronics Reliability 48 (4), pp. 526-530, 2008

Zou X, Xu JP, Xu JP, et al.
Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
APPLIED PHYSICS LETTERS, 90(16), 163502, 2007

Zou, X., Xu, J., Zhu, Q., Li, P., Li, C.
Study on electrical characteristics of Ge MOS with HfTiO and HfO2 gate dielectric annealed in wet N2
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007

Zou X, Xu JP, Xu JP, et al.
Suppressed growth of unstable low-k GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
APPLIED PHYSICS LETTERS 90 (16): Art. No. 163502 APR 16 2007

Cho DY, Oh SJ, Park TJ, et al.
Atomic rearrangements in HfO2/Si1-xGex interfaces
APPLIED PHYSICS LETTERS 89 (13): Art. No. 132904 SEP 25 2006

Ray SK, Mahapatra R, Maikap S
High-k gate oxide for silicon heterostructure MOSFET devices
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 17 (9): 689-710 SEP 2006

Curreem KKS, Lee PF, Wong KS, et al.
Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1-xGex
APPLIED PHYSICS LETTERS 88 (18): Art. No. 182905 MAY 1 2006

Park, T.J., Kim, J.H., Hong, S.H., Seo, M., Jang, J.H., Hwang, C.S.
Electrical and structural properties of high-k HfO2 on Si 1-x Gex substrates
ECS Transactions 1 (5), pp. 3-7 2005

143. Wan Don Kim, Gyu Weon Hwang, Oh Seong Kwon, Seong Keun Kim, Moonju Cho, Jeong Doo Seok, Sang Woon Lee, Min Ha Seo, Cheol Seong Hwang, Yo-Sep Min and Young Jin Cho, "Growth characteristics of atomic layer deposited TiO2 thin films on Ru and Si electrodes for memory capacitors applications", J. Electrochem. Soc., 152 (8), C552 (2005) - July [45]

Jae Ho Lee, Il-Hyuk Yu, Sang Young Lee and Cheol Seong Hwang
Phase control of HfO2-based dielectric films for higher-k materials
J. Vac. Sci. Technol. B 32 2014

Song, J.-G., Park, J., Yoon, J., Woo, H., Ko, K., Lee, T., Hwang, S.-H., Myoung, J.-M., Kim, K., Jang, Y., Kim, K.c, Kim, H.
Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
Journal of Luminescence, Volume 145, Pages 307-311 2014

Rentrop, S., Moebus, T., Abendroth, B., Strohmeyer, R., Schmid, A., Weling, T., Hanzig, J., Hanzig, F., Stoecker, H., Meyer, D. C.
Atomic layer deposition of strontium titanate films from Sr((Pr3Cp)-Pr-i)(2), Ti[N(CH3)(2)](4) and H2O
THIN SOLID FILMS, 550, 53-58 2014

Aarik, Jaan, Arroval, Tonis, Aarik, Lauri, Rammula, Raul, Kasikov, Aarne, Maendar, Hugo, Hudec, Boris, Husekova, Kristina, Froehlich, Karol
Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O-3: Growth of high-permittivity dielectrics with low leakage current
JOURNAL OF CRYSTAL GROWTH, 382, 61-66 2013

Aarik, Lauri, Arroval, Tonis, Rammula, Raul, Maendar, Hugo, Sammelselg, Vaino, Aarik, Jaan
Atomic layer deposition of TiO2 from TiCl4 and O-3
THIN SOLID FILMS, 542, 100-107 2013

Reiners, Marcel, Xu, Ke, Aslam, Nabeel, Devi, Anjana, Waser, Rainer, Hoffmann-Eifert, Susanne
Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium
CHEMISTRY OF MATERIALS, 25, 15 2013

Park, Yong Jun, Na, Kil-Ju, Park, Gye-Choon, Kim, Richard S., Anderson, Timothy J.
Thermal Evolution Characterizatics of Atomic Layer Deposition Prepared TiO2 Interfacial Layer by Synchrotron Radiation X-Ray Scattering
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 13, 6 2013

Kim, Seong Keun, Choi, Byung Joon, Yoon, Kyung Jean, Yoo, Yeon Woo, Hwang, Cheol Seong
Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode
APPLIED PHYSICS LETTERS, 102, 8 2013

Kim, Seong Keun, Kim, Kyung Min, Jeong, Doo Seok, Jeon, Woojin, Yoon, Kyung Jean, Hwang, Cheol Seong
Titanium dioxide thin films for next-generation memory devices
JOURNAL OF MATERIALS RESEARCH, 28, 3 2013

Miikkulainen, Ville, Leskela, Markku, Ritala, Mikko, Puurunen, Riikka L.
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
JOURNAL OF APPLIED PHYSICS, 113, 2 2013

Dirnstorfer, Ingo, Maehne, Hannes, Mikolajick, Thomas, Knaut, Martin, Albert, Matthias, Dubnack, Kristina
Atomic layer deposition of anatase TiO2 on porous electrodes for dye-sensitized solar cells
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31, 1 2013

YJ Kang, CS Kim, WS Kwack, SY Ryu, M Song, et al.
Air-Stable Inverted Organic Solar Cells with an Ultrathin Electron-Transport Layer Made by Atomic Layer Deposition
ECS Solid State Letters, 1 (1) Q1-Q3 2012

R Xu, CG Takoudis
Atomic Layer Deposition and Characterization of Amorphous ErxTi1-xOy Dielectric Ultra-Thin Films
ECS Journal of Solid State Science and Technology, 1 (6) N107-N114 2012

Zhou, G., Ren, J., Zhang, S.
Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory study
Thin Solid Films 524 , pp. 179-184 2012

Langston, M.C., Dasgupta, N.P., Jung, H.J., Logar, M., Huang, Y., Sinclair, R., Prinz, F.B.
In situ cycle-by-cycle flash annealing of atomic layer deposited materials
Journal of Physical Chemistry C 116 (45) , pp. 24177-24183 2012

Reck, J.N., Cortez, R.,Xie, S., Zhang, M.,O'Keefe, M., Dogan, F.
Chemical and microstructural characterization of rf-sputtered BaTiO 3 nano-capacitors with Ni electrodes
Applied Surface Science 258 (15) , pp. 5599-5604 2012

Kim, S.K., Han, S., Han, J.H., Hwang, C.S.
Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films
Applied Surface Science 257 (9), pp. 4302-4305 2011

Lee, S.W., Han, J.H., Kim, S.K., Han, S., Lee, W., Hwang, C.S.
Role of interfacial reaction in atomic layer deposition of TiO2 thin films using Ti(O- i Pr)2(tmhd)2 on Ru or RuO 2 substrates
Chemistry of Materials 23 (4), pp. 976-983 2011

Kim, S.K., Hoffmann-Eifert, S., Waser, R.
High growth rate in atomic layer deposition of TiO2 thin films by UV irradiation
Electrochemical and Solid-State Letters 14 (4), pp. H146-H148 2011

Kim, S.K., Hoffmann-Eifert, S., Reiners, M., Waser, R.
Relation between enhancement in growth and thickness-dependent crystallization in ALD Ti O2 thin films
Journal of the Electrochemical Society 158 (1), pp. D6-D9 2011

Haspert, L.C., Banerjee, P., Henn-Lecordier, L., Rubloff, G.W.
Correlation of Raman, electrical, and optical properties of high-, atomic layer deposited Al-doped TiO2
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (4), art. no. 041807 2011

Seong Keun Kim, Sang Woon Lee, Jeong Hwan Han, Bora Lee, Seungwu Han, Cheol Seong Hwang
Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory
Advanced Functional Materials, Volume 20, Issue 18, pages 2989–3003 2010

Lee, H.J., Hwang, G.W., Lee, K., Kim, G.H., Hwang, C.S.
Atomic layer deposition of PbTiO3 and its component oxide films
IEEE International Symposium on Applications of Ferroelectrics , art. no. 4393198, pp. 152-155 2007

Kim, S.K., Hoffmann-Eifert, S., Waser, R.
High growth rate in atomic layer deposition of TiO2 thin films by UV irradiation
Electrochemical and Solid-State Letters 14 (4), pp. H146-H148 2011

Lee, S.W., Han, J.H., Kim, S.K., Han, S., Lee, W., Hwang, C.S.
Role of interfacial reaction in atomic layer deposition of TiO2 thin films using Ti(O- i Pr)2(tmhd)2 on Ru or RuO 2 substrates
2011 Chemistry of Materials 23 (4), pp. 976-983 2011

Kim, S.K., Han, S., Han, J.H., Hwang, C.S.
Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films
2011 Applied Surface Science 257 (9), pp. 4302-4305 2011

Kim SK, Hoffmann-Eifert S, Reiners M, et al.
Relation Between Enhancement in Growth and Thickness-Dependent Crystallization in ALD TiO2 Thin Films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 158 1 D6-D9 2011

Kim SK, Lee SW, Han JH, et al.
Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory
ADVANCED FUNCTIONAL MATERIALS 20 18 2989-3003 SEP 23 2010

Lee HJ, Park MH, Min YS, et al.
Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination
JOURNAL OF PHYSICAL CHEMISTRY C 114 29 12736-12741 JUL 29 2010

Won SJ, Suh S, Lee SW, et al.
Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 13 Issue: 2 Pages: G13-G16 Published: 2010

Lee HJ, Hwang GW, Lee K, et al.
Atomic layer deposition of PbTiO3 and its component oxide films
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 Book Series: IEEE International Symposium on Applications of Ferroelectrics Pages: 152-155 Published: 2007

Choi GJ, Kim SK, Won SJ, et al.
Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O-2 Reactants
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 9 G138-G143 2009

Kim SK, Hoffmann-Eifert S, Mi S, et al.
Liquid Injection Atomic Layer Deposition of Crystalline TiO2 Thin Films with a Smooth Morphology from Ti(O-i-Pr)(2)(DPM)(2)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 8 D296-D300 2009

Joo DK, Park JS, Kang SW
Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
ELECTROCHEMICAL AND SOLID STATE LETTERS 12 3 H77-H79 2009

Kwon, H., Park, H.-H., Kim, B.-H., Ha, J.S.
Composition-dependent structural and electrical properties of Zr xTiy O2films grown on Ru O2 substrate by ALD
Journal of the Electrochemical Society 156 (2), pp. G13-G16, 2009

Qi Xiea, Jan Musschoot, Davy Deduytsche, Roland L. Van Meirhaeghe, Christophe Detavernier, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Lia and Xin-Ping Qu
Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
J. Electrochem. Soc., volume 155, issue 9 2008

Xie Q, Musschoot J, Deduytsche D, et al.
Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155 (9) H688-H692 2008

Kim SK, Choi GJ, Kim JH, et al.
Growth behavior of Al-doped TiO2 thin films by atomic layer deposition
CHEMISTRY OF MATERIALS 20 (11) 3723-3727 2008

Hwang GW, Kim WD, Hwang CS, et al.
Atomic layer deposition of Bi1-x-yTixSiyOz thin films using H2O oxidant and their characteristics depending on Si content
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (11): H915-H918 2007

Watanabe T, Hoffmann-Eifert S, Yang L, et al.
Liquid injection atomic layer deposition of TiOx films using Ti[OCH(CH3)(2)](4)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (6): G134-G140 2007

Hwang GW, Lee HJ, Lee K, et al.
Atomic layer deposition and electrical properties of PbTiO3 thin films using metallorganic precursors and H2O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (3): G69-G76 2007

Watanabe, T., Hoffmann-Eifert, S., Mi, S., Jia, C., Waser, R., Hwang, C.S.
Growth of ternary PbTi Ox films in a combination of binary oxide atomic layer depositions
Journal of Applied Physics 101 (1), art. no. 014114 2007

Jo�i, I., Kukli, K., Aarik, J., Aidla, A., Lu, J.
Precursor-dependent structural and electrical characteristics of atomic layer deposited films: Case study on titanium oxide
Materials Science in Semiconductor Processing 9 (6), pp. 1084-1089 2006

Kim SK, Hwang GW, Kim WD, et al.
Transformation of the crystalline structure of an ALD TiO2 film on a Ru electrode by O-3 pretreatment
ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (1): F5-F7 2006

Kim SK, Kim KM, Kwon OS, et al.
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ELECTROCHEMICAL AND SOLID STATE LETTERS 8 (12): F59-F62 2005

144. Suk Woo Lee, Sug Hun Hong, Jaehoo Park, Moonju Cho, Tae Joo Park, Cheol Seong Hwang, Yun-Seok Kim, Ha Jin Lim, Jong-Ho Lee, and Jeong Yeon Won, \"Fabrication of HfO2 Thin-Film Capacitors with a Polycrystalline Si Gate Electrode and a Low Interface Trap Density\", Electrochem. Solid St. Lett., 8(9), F32-F35 (2005) - Jul [1]

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145. Yo-Sep Min, Young Jin Cho, Ju-Hye Ko, Eun Ju Bae, Wanjun Park, and Cheol Seong Hwang, "Atomic Layer Deposition of Bi1-x-yTixSiyOz Thin Films from Alkoxide Precursors and Water", J. Electrochem. Soc., 152(9), F124-F128 (2005) - Jul [4]

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NANO LETTERS, 14, 1 2014

Donmez, Inci, Kayaci, Fatma, Ozgit-Akgun, Cagla, Uyar, Tamer, Biyikli, Necmi
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JOURNAL OF ALLOYS AND COMPOUNDS, 559 , 146-151 2013

Hwang GW, Kim WD, Hwang CS, et al.
Atomic layer deposition of Bi1-x-yTixSiyOz thin films using H2O oxidant and their characteristics depending on Si content
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (11) H915-H918 2007

Min YS, Asanov IP, Hwang CS
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ELECTROCHEMICAL AND SOLID STATE LETTERS 9 (7): G231-G235 2006

146. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, "Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition", J. Appl. Phys., 98 (3), 033715 (2005) - Aug [510]

Gale, E., Mayne, R., Adamatzky, A., De Lacy Costello, B.
Drop-coated titanium dioxide memristors
Materials Chemistry and Physics 2014

Authors of DocumentKumar, P.A., Ray, S., Chakraverty, S., Sarma, D.D.
Magnetoresistance and electroresistance effects in Fe3O4 nanoparticle system
Journal of Experimental Nanoscience 2014

Xu, Dinglin, Xiong, Ying, Tang, Minghua, Zeng, Baiwen
Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films
JOURNAL OF ALLOYS AND COMPOUNDS, 584 2014

Mondal, Somnath, Chueh, Ching-Hao, Pan, Tung-Ming
Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications
JOURNAL OF APPLIED PHYSICS, 115, 1 2014

Liu, Yang; West, Anthony R.
Voltage-dependent resistance of undoped rutile, TiO2, ceramics
APPLIED PHYSICS LETTERS Volume: 103 Issue: 26 Article Number: 263508 Published: DEC 23 2013

Tulu, Berhanu; Chang, W. Z.; Chu, Jinn P.; et al.
Forming-free resistive switching characteristics of 15 nm-thick multicomponent oxide
APPLIED PHYSICS LETTERS Volume: 103 Issue: 25 Article Number: 252904 Published: DEC 16 2013

Younis, Adnan; Chu, Dewei; Li, Sean
Stochastic memristive nature in Co-doped CeO2 nanorod arrays
APPLIED PHYSICS LETTERS Volume: 103 Issue: 25 Article Number: 253504 Published: DEC 16 2013

Fan, Zheng; Fan, Xudong; Li, Alex; et al.
In situ forming, characterization, and transduction of nanowire memristors
NANOSCALE Volume: 5 Issue: 24 Pages: 12310-12315 Published: 2013

Soni, Rohit; Meuffels, Paul; Petraru, Adrian; et al.
Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes
NANOSCALE Volume: 5 Issue: 24 Pages: 12598-12606 Published: 2013

Feng, Chunxiao; Xu, Guangqing; Lv, Jun; et al.
Comparison of Photoelectrochemical and Electrochemical Properties of TiO2 Nanotube Arrays Crystallized by Hydrothermal and Annealing Methods
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 160 Issue: 10 Pages: H727-H732 Published: 2013

Celano, Umberto; Goux, Ludovic; Opsomer, Karl; et al.
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices
NANOSCALE Volume: 5 Issue: 22 Pages: 11187-11192 Published: 2013

Yang, Yuchao; Lu, Wei
Nanoscale resistive switching devices: mechanisms and modeling
NANOSCALE Volume: 5 Issue: 21 Pages: 10076-10092 Published: 2013

Xu, Dinglin; Xiong, Ying; Tang, Minghua; et al.
Improvement of Resistive Switching Performances in ZnLaO Film by Embedding a Thin ZnO Buffer Layer
ECS SOLID STATE LETTERS Volume: 2 Issue: 9 Pages: Q69-Q71 Published: 2013

Lim, Hyungkwang; Jang, Ho Won; Lee, Doh-Kwon; et al.
Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors
NANOSCALE Volume: 5 Issue: 14 Pages: 6363-6371 Published: 2013

Younis, A., Chu, D., Li, S.
Tuneable resistive switching characteristics of In2O3 nanorods array via Co doping
RSC Advances 2013

Shuai, Y., Ou, X., Luo, W., (...), Schmidt, O.G., Schmidt, H.
Key concepts behind forming-free resistive switching incorporated with rectifying transport properties
Scientific Reports 2013

Chakrabarti, B., Galatage, R.V., Vogel, E.M.
Multilevel switching in forming-free resistive memory devices with atomic layer deposited HfTiOx nanolaminate
IEEE Electron Device Letters 2013

Ninomiya, T., Wei, Z., Muraoka, S., (...), Katayama, K., Takagi, T.
Conductive filament scaling of TaOx bipolar ReRAM for improving data retention under low operation current
IEEE Transactions on Electron Devices 2013

Fang, Z., Wang, X.P., Li, X., (...), Lo, G.Q., Kwong, D.L.
Fully cmos-compatible 1t1r integration of vertical nanopillar GAA transistor and oxide-based RRAM cell for high-density nonvolatile memory application
IEEE Transactions on Electron Devices, 2013

Lai, C.-H., Liu, C.-Y., Yang, H.
Bipolar resistance switching characteristics in zirconium oxide
Ferroelectrics 2013

Hu, C., McDaniel, M.D., Ekerdt, J.G., Yu, E.T.
High ON/OFF ratio and quantized conductance in resistive switching of TiO2 on silicon
IEEE Electron Device Letters 2013

Salaoru, Iulia, Khiat, Ali, Li, Qingjiang, Berdan, Radu, Prodromakis, Themistoklis
Pulse-induced resistive and capacitive switching in TiO2 thin film devices
APPLIED PHYSICS LETTERS, 103, 23 2013

Kim Ngoc Pham, Trung Do Nguyen, Thi Kieu Hanh Ta, Khanh Linh Dao Thuy, Van Hieu Le, Duy Phong Pham, Cao Vinh Tran, Mott, Derrick, Maenosono, Shinya, Kim, Sang Sub, Lee, Jaichan, Duc Thang Pham, Bach Thang Phan
An influence of bottom electrode material on electrical conduction and resistance switching of TiOx thin films
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 64, 3 2013

Zhang, Guowei, Sun, Jia-Lin, Wei, Jinquan, Sun, Huanhuan, Zhu, Jia-Lin
Significantly enhanced photoresponse in carbon nanotube film/TiO2 nanotube array heterojunctions by pre-electroforming
NANOTECHNOLOGY, 24, 46 2013

Shao, Xing L., Zhao, Jin S., Zhang, Kai L., Chen, Ran, Sun, Kuo, Chen, Chang J., Liu, Kai, Zhou, Li W., Wang, Jian Y., Ma, Chen M., Yoon, Kyung J., Hwang, Cheol S.
Two-Step Reset in the Resistance Switching of the Al/TiOx/Cu Structure
ACS APPLIED MATERIALS & INTERFACES, 5, 21 2013

Nakano, Haruhisa, Takahashi, Makoto, Sato, Motonobu, Kotsugi, Masato, Ohkochi, Takuo, Muro, Takayuki, Nihei, Mizuhisa, Yokoyama, Naoki
Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe
JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 11 2013

Ninomiya, Takeki, Katayama, Koji, Muraoka, Shunsaku, Yasuhara, Ryutaro, Mikawa, Takumi, Wei, Zhiqiang
Conductive Filament Expansion in TaOx Bipolar Resistive Random Access Memory during Pulse Cycling
JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 11 2013

Ohta, Akio, Fukusima, Motoki, Makihara, Katsunori, Murakami, Hideki, Higashi, Seiichiro, Miyazaki, Seiichi
Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 11, 2 2013

Zhao, Hongbin, Tu, Hailing, Wei, Feng, Xiong, Yuhua, Zhang, Xinqaing, Du, Jun
Characteristics and mechanism of nano-polycrystalline La2O3 thin-film resistance switching memory
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 7, 11 2013

Yun, Min Ju, Kim, Hee-Dong, Kim, Tae Geun
Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31, 6 2013

Abendroth, Barbara, Moebus, Theresa, Rentrop, Solveig, Strohmeyer, Ralph, Vinnichenko, Mykola, Weling, Tobias, Stoecker, Hartmut, Meyer, Dirk C.
Atomic layer deposition of TiO2 from tetrakis(dimethylamino) titanium and H2O
THIN SOLID FILMS, 545, 176-182 2013

Nagashima, Kazuki, Yanagida, Takeshi, Kanai, Masaki, Celano, Umberto, Rahong, Sakon, Meng, Gang, Zhuge, Fuwei, He, Yong, Park, Bae Ho, Kawai, Tomoji
Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides
APPLIED PHYSICS LETTERS, 103, 17 2013

Yuan Xue-Yong, Luo Li-Rong, Wu Di, Xu Qing-Yu
Bipolar resistive switching in BiFe0.95Zn0.05O3 films
CHINESE PHYSICS B, 22, 10 2013

Park, Heejung, Go, Seunghee, Lee, Chiyoung, Nam, Hoseok, Lee, Jong-Kwon, Lee, Jaegab
Consecutive and Selective Chemical Vapor Deposition of Pt/Al Bilayer Electrodes for TiO2 Resistive Switching Memory
JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 10, 2 2013

Frohlich, K
TiO2-based structures for nanoscale memory applications
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 16, 5, 1186-1195 2013

Lim, Hyungkwang, Kim, Inho, Kim, Jin-Sang, Hwang, Cheol Seong, Jeong, Doo Seok
Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold
NANOTECHNOLOGY, 24, 38 2013

Lai, C. H., Chen, C. H., & Tseng, T. Y.
Resistive switching behavior of sol–gel deposited TiO2 thin films under different heating ambience
Surface and Coatings Technology. 2013

Song, Min Yeong, Seo, Yujeong, Park, Soyun, Lee, Jae Hyuk, An, Ho-Myoung, Kim, Tae Geun
Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 13, 9 2013

Zhou, Q., Lu, Q., Zhou, Y., Yang, Y., Du, X., Zhang, X., & Wu, X.
Influences of preparation methods on bipolar switching properties in copper nitride films
Surface and Coatings Technology 2013

Procel, L. M., Trojman, L., Moreno, J., Crupi, F., Maccaronio, V., Degraeve, R., Goux, L., Simoen, E.
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
JOURNAL OF APPLIED PHYSICS, 114, 7 2013

Du, Yuanmin, Kumar, Amit, Pan, Hui, Zeng, Kaiyang, Wang, Shijie, Yang, Ping, Wee, Andrew Thye Shen
The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy
AIP ADVANCES, 3, 8 2013

Tsuchiya, Takashi, Miyoshi, Shogo, Yamashita, Yoshiyuki, Yoshikawa, Hideki, Terabe, Kazuya, Kobayashi, Keisuke, Yamaguchi, Shu
Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 14, 4 2013

Greenlee, Jordan D., Shank, Joshua C., Tellekamp, M. Brooks, Doolittle, W. Alan
Spatiotemporal drift-diffusion simulations of analog ionic memristors
JOURNAL OF APPLIED PHYSICS, 114, 3 2013

Choi, Byung Joon, Torrezan, Antonio C., Norris, Kate J., Miao, Feng, Strachan, John Paul, Zhang, Min-Xian, Ohlberg, Douglas A. A., Kobayashi, Nobuhiko P., Yang, J. Joshua, Williams, R. Stanley
Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch
NANO LETTERS, 13, 7 2013

Otsuka, Shintaro, Kato, Takashi, Kyomi, Takuya, Hamada, Yoshifumi, Tada, Yoshihiro, Shimizu, Tomohiro, Shingubara, Shoso
Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 6, 2 2013

Yang, Yuchao, Choi, ShinHyun, Lu, Wei
Oxide Heterostructure Resistive Memory
NANO LETTERS, 13, 6 2013

Yang, J. Joshua, Williams, R. Stanley
Memristive Devices in Computing System: Promises and Challenges
ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS, 9, 2 2013

Pan, Tung-Ming; Lu, Chih-Hung
Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices
MATERIALS CHEMISTRY AND PHYSICS Volume: 139 Issue: 2-3 Pages: 437-442 DOI: 10.1016/j.matchemphys.2013.01.015 Published: MAY 15 2013

Kudo, Masaki; Arita, Masashi; Ohno, Yuuki; et al.
Preparation of resistance random access memory samples for in situ transmission electron microscopy experiments
THIN SOLID FILMS Volume: 533 Pages: 48-53 DOI: 10.1016/j.tsf.2012.10.102 Published: APR 30 2013

Chen, Y. S.; Chen, B.; Gao, B.; et al.
Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device
JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 16 Article Number: 164507 DOI: 10.1063/1.4803076 Published: APR 28 2013

Huang, Yu-Ting; Yu, Shih-Ying; Hsin, Cheng-Lun; et al.
In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories
ANALYTICAL CHEMISTRY Volume: 85 Issue: 8 Pages: 3955-3960 DOI: 10.1021/ac303528m Published: APR 16 2013

Zhou, Qianfei; Lu, Qian; Zhang, Xin; et al.
A study of copper oxide based resistive switching memory by conductive atom force microscope
APPLIED SURFACE SCIENCE Volume: 271 Pages: 407-411 DOI: 10.1016/j.apsusc.2013.01.217 Published: APR 15 2013

Rogala, M.; Klusek, Z.; Rodenbuecher, C.; et al.
Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching
APPLIED PHYSICS LETTERS Volume: 102 Issue: 13 Article Number: 131604 DOI: 10.1063/1.4801437 Published: APR 1 2013

Hirose, Sakyo; Niimi, Hideaki; Kageyama, Keisuke; et al.
Impact of the Electrical Forming Process on the Resistance Switching Behaviors in Lanthanum-Doped Strontium Titanate Ceramic Chip Devices
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 4 Article Number: 045802 DOI: 10.7567/JJAP.52.045802 Published: APR 2013

Iwata, Tatsuya; Nishi, Yusuke; Kimoto, Tsunenobu
Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 4 Article Number: 041801 DOI: 10.7567/JJAP.52.041801 Published: APR 2013

Panda, Debashis; Tseng, Tseung-Yuen
Growth, dielectric properties, and memory device applications of ZrO2 thin films
THIN SOLID FILMS Volume: 531 Pages: 1-20 DOI: 10.1016/j.tsf.2013.01.004 Published: MAR 15 2013

Awais, Muhammad Naeem; Muhammad, Nauman Malik; Navaneethan, Duraisamy; et al.
Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor)
MICROELECTRONIC ENGINEERING Volume: 103 Pages: 167-172 DOI: 10.1016/j.mee.2012.09.005 Published: MAR 2013

Li, Chao; Ding, Xidong; Deng, Chenxing; et al.
Observing the Resistive Switching of MgZnO Thin Film via Conducting Atomic Force Microscopy
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 13 Issue: 2 Pages: 766-770 DOI: 10.1166/jnn.2013.6096 Published: FEB 2013

Tang, Xianwu; Zhu, Xuebin; Dai, Jianming; et al.
Evolution of the resistive switching in chemical solution deposited-derived BiFeO3 thin films with dwell time and annealing temperature
JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 4 Article Number: 043706 DOI: 10.1063/1.4789265 Published: JAN 28 2013

Li, Kun; Wen, Zheng; Wu, Di; et al.
Bipolar resistive switching based on SrTiO3/YBa2Cu3O7 epi-layers
JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 46 Issue: 3 Article Number: 035308 DOI: 10.1088/0022-3727/46/3/035308 Published: JAN 23 2013

Gu, Tingkun
Role of oxygen vacancies in TiO2-based resistive switches
JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 3 Article Number: 033707 DOI: 10.1063/1.4779767 Published: JAN 21 2013

Miikkulainen, Ville; Leskela, Markku; Ritala, Mikko; et al.
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
JOURNAL OF APPLIED PHYSICS Volume: 113 Issue: 2 Article Number: 021301 DOI: 10.1063/1.4757907 Published: JAN 14 2013

Rajachidambaram, Jaana S.; Murali, Santosh; Conley, John F., Jr.; et al.
Bipolar resistive switching in an amorphous zinc tin oxide memristive device
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 31 Issue: 1 Article Number: 01A104 DOI: 10.1116/1.4767124 Published: JAN 2013

Tang, Guangsheng; Zeng, Fei; Chen, Chao; et al.
Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer
NANOSCALE Volume: 5 Issue: 1 Pages: 422-428 DOI: 10.1039/c2nr32743k Published: 2013

Ninomiya, T., Muraoka, S., Wei, Z., Yasuhara, R., Katayama, K., Takagi, T.
Improvement of data retention during long-term use by suppressing conductive filament expansion in TaOx bipolar-ReRAM
IEEE Electron Device Letters 34 (6) , art. no. 6515304 , pp. 762-764 2013

Yoon, K.J., Song, S.J., Seok, J.Y., Yoon, J.H., Kim, G.H., Lee, J.H., Hwang, C.S.
Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt
Nanotechnology 24 (14) , art. no. 145201 2013

Kang, Y.H., Lee, T.I., Moon, K.-J., Moon, J., Hong, K., Cho, J.-H., Lee, W., Myoung, J.-M.
Observation of conductive filaments in a resistive switching nonvolatile memory device based on amorphous InGaZnO thin films
Materials Chemistry and Physics 138 (2-3) , pp. 623-627 2013

Calka, P., Martinez, E., Delaye, V., Lafond, D., Audoit, G., Mariolle, D., Chevalier, N., (...), Guedj, C.
Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures
Nanotechnology 24 (8) , art. no. 085706 2013

Kim, S.K., Kim, K.M., Jeong, D.S., Jeon, W., Yoon, K.J., Hwang, C.S.
Titanium dioxide thin films for next-generation memory devices
Journal of Materials Research 28 (3) , pp. 313-325 2013

Yang, J. J., Strukov, D. B., & Stewart, D. R.
Memristive devices for computing
Nature nanotechnology 2013

Baek, H., Lee, C., Choi, J., & Cho, J.
Nonvolatile Memory Devices Prepared from Sol–Gel Derived Niobium Pentoxide Films
Langmuir 2013

Magyari-Kope, B., Park, S. G., Lee, H. D., & Nishi, Y.
First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides
Journal of Materials Science 2012

Senthilkumar, V., Kathalingam, A., Kannan, V., & Rhee, J. K.
Observation of multi-conductance state in solution processed Al/a-TiO2/ITO memory device
Microelectronic Engineering. 2012

Ko, D., Kim, S., Ahn, T., Oh, Y., & Kim, Y.
Microstructural Investigation of Resistive Switching Behavior in Titanium Oxide using in-situ TEM
Microscopy and Microanalysis 2012

Adepalli, K. K., Kelsch, M., Merkle, R., & Maier, J.
Influence of Line Defects on the Electrical Properties of Single Crystal TiO2
Advanced Functional Materials 2012

Mondal, S., Her, J. L., Ko, F. H., & Pan, T. M.
The Effect of Al and Ni Top Electrodes in Resistive Switching Behaviors of Yb2O3-Based Memory Cells
ECS Solid State Letters 2012

Lai, C. H., Lee, Y. M., Tseng, C. F., & Liu, C. Y.
Resistance Transition in NiO Thin Film and Its Temperature Dependence
Ferroelectrics 2012

Lin, C. C., Liao, J. W., & Li, W. Y.
Resistive switching properties of TiO2 film for flexible non-volatile memory applications
Ceramics International 2012

Chu, D., Younis, A., Teck Tan, T., & Li, S.
Resistive Switching Behaviors in Electrodeposited BaTiOF4 Nanorod Layers
Solid State Communications. 2012

NISHIGAKI, S., Guobin, W. E. I., MURAKAMI, H., HIGASHI, S., & MIYAZAKI, S.
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
IEICE transactions on electronic 2012

Eshraghian, K., Kavehei, O., Cho, K.-R., Chappell, J.M., Iqbal, A., Al-Sarawi, S.F., Abbott, D.
Memristive device fundamentals and modeling: Applications to circuits and systems simulation
Proceedings of the IEEE 100 (6) , art. no. 6177643 , pp. 1991-2007 2012

Wang, W., Dong, R., Yan, X., Yang, B., An, X.
Memristive behavior of ZnO/Au film investigated by a TiN CAFM Tip and its model based on the experiments
IEEE Transactions on Nanotechnology 11 (6) , art. no. 6293903 , pp. 1135-1139 2012

Zhou, P., Ye, L., Sun, Q.-Q., Chen, L., Ding, S.-J., Jiang, A.-Q., Zhang, D.W.
The temperature dependence in nanoresistive switching of HfAlO
IEEE Transactions on Nanotechnology 11 (6) , art. no. 6263305 , pp. 1059-1062 2012

Mazumder, P., Kang, S.M., Waser, R.
Memristors: Devices, models, and applications [scanning the issue]
Proceedings of the IEEE 100 (6) , art. no. 6198375 , pp. 1911-1919 2012

Wong, H.-S.P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., (...), Tsai, M.-J.
Metal-oxide RRAM
Proceedings of the IEEE 100 (6) , art. no. 6193402 , pp. 1951-1970 2012

Hu, S.G., Liu, Y., Chen, T.P., Liu, Z., Yang, M., Yu, Q., Fung, S.
Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
IEEE Transactions on Electron Devices 59 (5) , art. no. 6152142 , pp. 1558-1562 2012

Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO 2/Pt cell
Yoon, K.J., Lee, M.H., Kim, G.H., Song, S.J., Seok, J.Y., Han, S., Yoon, J.H., (...), Hwang, C.S.
Nanotechnology 23 (18) , art. no. 185202 2012

Woo, J.-C., Chun, Y.-S., Joo, Y.-H., Kim, C.-I.
The dry etching property of TiO 2 thin films using metal-insulator-metal capacitor in inductively coupled plasma system
Vacuum 86 (12) , pp. 2152-2157 2012

Ko, D.-S., Kim, S.-I., Ahn, T.-Y., Kim, S.-D., Oh, Y.-H., Kim, Y.-W.
Effect of the electrode materials on the resistive switching of Ti 4O 7
Applied Physics Letters 101 (5) , art. no. 053502 2012

Yu, S., Lee, B., Wong, H.-S.P.
Metal oxide resistive switching memory
Springer Series in Materials Science 149 (1) , pp. 303-335 2012

Singh, Bharti; Mehta, B. R.; Varandani, Deepak; et al.
CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique
NANOTECHNOLOGY Volume: 23 Issue: 49 Article Number: 495707 DOI: 10.1088/0957-4484/23/49/495707 Published: DEC 14 2012

Wu, Di; Jiang, Yang; Yu, Yongqiang; et al.
Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires
NANOTECHNOLOGY Volume: 23 Issue: 48 Article Number: 485203 DOI: 10.1088/0957-4484/23/48/485203 Published: DEC 7 2012

Hong, Sung-Hoon; Cho, Joong-Yeon; Yang, Ki-Yeon; et al.
Direct Patterning of Nanoscale Cu2O Resistive Material for Soft Nanoelectronics
APPLIED PHYSICS EXPRESS Volume: 5 Issue: 12 Article Number: 126501 DOI: 10.1143/APEX.5.126501 Published: DEC 2012

Yalon, E.; Cohen, S.; Gavrilov, A.; et al.
Evaluation of the local temperature of conductive filaments in resistive switching materials
NANOTECHNOLOGY Volume: 23 Issue: 46 Article Number: 465201 DOI: 10.1088/0957-4484/23/46/465201 Published: NOV 23 2012

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki
Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics
JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 51 Issue: 11 Article Number: 114201 DOI: 10.1143/JJAP.51.114201 Part: Part 1 Published: NOV 2012

Wei, L. L.; Wang, J.; Chen, Y. S.; et al.
Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgOx/Mg0.2Zn0.8O/Pt device
JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 45 Issue: 42 Article Number: 425303 DOI: 10.1088/0022-3727/45/42/425303 Published: OCT 24 2012

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JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 45 Issue: 35 Article Number: 355306 DOI: 10.1088/0022-3727/45/35/355306 Published: SEP 5 2012

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JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 45 Issue: 35 Article Number: 355101 DOI: 10.1088/0022-3727/45/35/355101 Published: SEP 5 2012

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CHINESE PHYSICS LETTERS Volume: 29 Issue: 8 Article Number: 087201 DOI: 10.1088/0256-307X/29/8/087201 Published: AUG 2012

Chiang, Kun-Keng; Chen, Jen-Sue; Wu, Jih-Jen
Aluminum Electrode Modulated Bipolar Resistive Switching of Al/Fuel-Assisted NiOx/ITO Memory Devices Modeled with a Dual-Oxygen-Reservoir Structure
ACS APPLIED MATERIALS & INTERFACES Volume: 4 Issue: 8 Pages: 4237-4245 DOI: 10.1021/am300946f Published: AUG 2012

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Resistive Switching Behaviors of HfO2 Thin Films by Sol-Gel Spin Coating for Nonvolatile Memory Applications
APPLIED PHYSICS EXPRESS Volume: 5 Issue: 8 Article Number: 085803 DOI: 10.1143/APEX.5.085803 Published: AUG 2012

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APPLIED PHYSICS LETTERS Volume: 101 Issue: 3 Article Number: 032101 DOI: 10.1063/1.4737016 Published: JUL 16 2012

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Versatile resistive switching (memristive) behavior in an ITO/ZRO(2)/AG sandwich fabricated using electrohydrodynamic printing
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Jung, Chang Hwa; Park, Moon Kyu; Woo, Seong Ihl
Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application
APPLIED PHYSICS LETTERS Volume: 100 Issue: 26 Article Number: 262107 DOI: 10.1063/1.4730400 Published: JUN 25 2012

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JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 45 Issue: 22 Article Number: 225304 DOI: 10.1088/0022-3727/45/22/225304 Published: JUN 6 2012

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JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 51 Issue: 6 Special Issue: SI Article Number: 06FE06 DOI: 10.1143/JJAP.51.06FE06 Part: Part 2 Published: JUN 2012

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Volume: 107 Issue: 4 Pages: 891-897 DOI: 10.1007/s00339-012-6815-8 Published: JUN 2012

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THIN SOLID FILMS Volume: 520 Issue: 14 Special Issue: SI Pages: 4762-4767 DOI: 10.1016/j.tsf.2011.10.174 Published: MAY 1 2012

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APPLIED PHYSICS LETTERS Volume: 100 Issue: 17 Article Number: 172101 DOI: 10.1063/1.4704917 Published: APR 23 2012

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APPLIED PHYSICS LETTERS Volume: 100 Issue: 14 Article Number: 143504 DOI: 10.1063/1.3700728 Published: APR 2 2012

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JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 51 Issue: 4 Special Issue: SI Article Number: 04DD06 DOI: 10.1143/JJAP.51.04DD06 Part: Part 2 Published: APR 2012

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JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 51 Issue: 4 Special Issue: SI Article Number: 04DD07 DOI: 10.1143/JJAP.51.04DD07 Part: Part 2 Published: APR 2012

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IEEE ELECTRON DEVICE LETTERS Volume: 33 Issue: 4 Pages: 582-584 DOI: 10.1109/LED.2011.2182175 Published: APR 2012

Mahapatra, R.; Horsfall, A. B.; Wright, N. G.
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APPLIED PHYSICS LETTERS Volume: 100 Issue: 13 Article Number: 133505 DOI: 10.1063/1.3701270 Published: MAR 26 2012

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APPLIED PHYSICS LETTERS Volume: 100 Issue: 12 Article Number: 123101 DOI: 10.1063/1.3694754 Published: MAR 19 2012

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APPLIED PHYSICS LETTERS Volume: 100 Issue: 11 Article Number: 113501 DOI: 10.1063/1.3693392 Published: MAR 12 2012

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Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-dFeO3 Interfaces
ADVANCED FUNCTIONAL MATERIALS Volume: 22 Issue: 5 Pages: 1040-1047 DOI: 10.1002/adfm.201102883 Published: MAR 7 2012

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JOURNAL OF APPLIED PHYSICS Volume: 111 Issue: 5 Article Number: 053504 DOI: 10.1063/1.3691204 Published: MAR 1 2012

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APPLIED SURFACE SCIENCE Volume: 258 Issue: 10 Pages: 4588-4591 DOI: 10.1016/j.apsusc.2012.01.034 Published: MAR 1 2012

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ADVANCED FUNCTIONAL MATERIALS Volume: 22 Issue: 3 Pages: 546-554 DOI: 10.1002/adfm.201102208 Published: FEB 8 2012

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Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Volume: 209 Issue: 2 Pages: 364-368 DOI: 10.1002/pssa.201127391 Published: FEB 2012

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SCIENTIFIC REPORTS Volume: 2 Article Number: 242 DOI: 10.1038/srep00242 Published: JAN 31 2012

Yu, Shimeng; Jeyasingh, Rakesh; Wu, Yi; et al.
Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2
PHYSICAL REVIEW B Volume: 85 Issue: 4 Article Number: 045324 DOI: 10.1103/PhysRevB.85.045324 Published: JAN 30 2012

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ADVANCES IN COLLOID AND INTERFACE SCIENCE Volume: 170 Issue: 1-2 Pages: 2-27 DOI: 10.1016/j.cis.2011.11.001 Published: JAN 15 2012

K. Drogowska, S. Flege, C. Schmitt, D. Rogalla, H.-W. Becker, Nhu-T. H. Kim-Ngan, A. Brudnik, Z. Tarnawski, K. Zakrzewska, M. Marszaek, and A. G. Balogh
Hydrogen Charging Effects in Pd/Ti/TiO2 /Ti Thin Films Deposited on Si(111) Studied by Ion Beam Analysis Methods
Advances in Materials Science and Engineering Volume 2012 (2012), Article ID 269603, 8 pages 2012

M. Chowdhury, B. Long, R. Jha, V. Devabhaktuni
A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen
Solid-State Electronics 68 1–3, 2012

Kyung Min Kim et al.
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Nanotechnology 23, 035201 2012

Bersuker, G.; Gilmer, D. C.; Veksler, D.; et al.
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JOURNAL OF APPLIED PHYSICS 2011

Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; et al.
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
THIN SOLID FILMS 2011

Youn Hee Kang, Ji-Hyuk Choi, Tae Il Lee, Woong Lee, Jae-Min Myoung
Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films
Solid State Communications Volume 151, Issue 23, December 2011, Pages 1739-1742, 2011

Kumar, Rakesh; Mehta, B.R.; Varandani, Deepak; Singh, V.N.
Resistive Switching in Copper Oxide Nanorods: A Bottom Up Approach Applicable for Enhanced Scalability
Journal of Nanoscience and Nanotechnology, Volume 11, Number 10, October 2011 , pp. 8538-8542(5) 2011

SHENG-YU WANG, TSEUNG-YUEN TSENG
INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES
Journal of Advanced Dielectrics Volume: 1, Issue: 2(2011) pp. 141-162, 2011

Chun Hung Lai, Chia Hung Chen, Chih Yi Liu
Resistive Switching and Current Conduction for Thermally Grown NiO Thin Film
Materials Science Forum (Volume 687) 2011

Rakesh V. Gudavarthy et al.
Resistance switching in electrodeposited polycrystalline Fe3O4 films
Electrochimica Acta 56, 10550 2011

Min-Gyu Sung et al.
Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory
Solid-State Electronics 63, 115 2011

Kentaro KYUNO
Characterization of Local Electrical Properties of Gate Dielectrics by Conductive Atomic Force Microscopy
Journal of the Vacuum Society of Japan 54, 420 2011

Albert B. K. Chen et al.
A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory
Advanced Functional Materials, n/a 2011

McWilliams Christopher; de Araujo Carlos A. Paz; Celinska Jolanta; et al.
Re-Programmable Antifuse FPGA Utilizing Resistive CeRAM Elements
INTEGRATED FERROELECTRICS Volume: 124 Pages: 97-104 DOI: 10.1080/10584587.2011.573729 2011

Choi Byung Joon; Chen Albert B. K.; Yang Xiang; et al.
Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO(2) Thin Films for ReRAM
ADVANCED MATERIALS Volume: 23 Issue: 33 Pages: 3847-+ 2011

Hsu Cheng-Hsing; Yan Shu-Fong
Resistance-switching behaviour in ZnO-Nb(2)O(5) thin films for non-volatile memory application
MICRO & NANO LETTERS Volume: 6 Issue: 9 Pages: 799-801 2011

Xing Zhong-Wen; Chen X.; Wu N. J.; et al.
Bipolar resistive switching in Cr-doped TiO(x) thin films
CHINESE PHYSICS B Volume: 20 Issue: 9 Article Number: 097703 2011

Pan Tung-Ming; Lu Chih-Hung
Forming-free resistive switching behavior in Nd(2)O(3), Dy(2)O(3), and Er(2)O(3) films fabricated in full room temperature
APPLIED PHYSICS LETTERS Volume: 99 Issue: 11 Article Number: 113509 2011

Liao Zhaoliang; Gao Peng; Meng Yang; et al.
Electroforming and endurance behavior of Al/Pr(0.7)Ca(0.3)MnO(3)/Pt devices
APPLIED PHYSICS LETTERS Volume: 99 Issue: 11 Article Number: 113506 2011

Cagli Carlo; Nardi Federico; Harteneck Bruce; et al.
Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
SMALL Volume: 7 Issue: 20 Pages: 2899-2905 2011

Wang Wenhong; Dong Ruixin; Yan Xunling; et al.
Memristive characteristics in semiconductor/metal contacts tested by conductive atomic force microscopy
JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 44 Issue: 47 Article Number: 475102 2011

Menzel Stephan; Waters Matthias; Marchewka Astrid; et al.
Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
ADVANCED FUNCTIONAL MATERIALS Volume: 21 Issue: 23 Pages: 4487-4492 2011

Miao Feng; Strachan John Paul; Yang J. Joshua; et al.
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
ADVANCED MATERIALS Volume: 23 Issue: 47 Pages: 5633-+ 2011

Walczyk, C., Wenger, C., Walczyk, D., Lukosius, M., Costina, I., Fraschke, M., Dabrowski, J., (...), Schroeder, T.
On the role of Ti adlayers for resistive switching in HfO2 -based metal-insulator-metal structures: Top versus bottom electrode integration
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (1), pp. 01AD021-01AD027 2011

Tomasek, M., Plecenik, T., Truchly, M., Noskovic, J., Roch, T., Zahoran, M., Chromik, S., (...), Plecenik, A.
Temperature dependence of the resistance switching effect studied on the metal/YBa2 Cu3 O6+x planar junctions
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (1), pp. 01AD041-01AD045 2011

Lu, W., Kim, K.-H., Chang, T., Gaba, S.
Two-terminal resistive switches (memristors) for memory and logic applications
Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC , art. no. 5722187, pp. 217-223 2011

Wei, G., Goto, Y., Ohta, A., Makihara, K., Murakami, H., Higashi, S., Miyazaki, S.
Impact of annealing ambience on resistive switching in Pt/TiO 2/Pt structure
Applied Physics A: Materials Science and Processing 103 (1), pp. 21-26 2011

Chiang, Y.-D., Chang, W.-Y., Ho, C.-Y., Chen, C.-Y., Ho, C.-H., Lin, S.-J., Wu, T.-B., He, J.-H.
Single-ZnO-nanowire memory
IEEE Transactions on Electron Devices 58 (6), art. no. 5741715, pp. 1735-1740 2011

Vandelli, L., Padovani, A., Bersuker, G., Gilmer, D., Pavan, P., Larcher, L.
Modeling of the forming operation in HfO2-based resistive switching memories
2011 3rd IEEE International Memory Workshop, IMW 2011 , art. no. 5873224 2011

Jameson, J.R., Nishi, Y.
Role of hydrogen ions in TiO2-based memory devices
Integrated Ferroelectrics 124 (1), pp. 112-118 2011

Zhang, F., Gan, X., Li, X., Wu, L., Gao, X., Zheng, R., He, Y., (...), Yang, R.
Realization of rectifying and resistive switching behaviors of TiO 2 nanorod arrays for nonvolatile memory
Electrochemical and Solid-State Letters 14 (10), pp. H422-H425 2011

Yu, Q., Liu, Y., Chen, T.P., Liu, Z., Yu, Y.F., Fung, S.
Competition of resistive-switching mechanisms in nickel-rich nickel oxide thin films
Electrochemical and Solid-State Letters 14 (10), pp. H400-H403 2011

Kim, J., Na, H., Lee, S., Lee, K., Yoo, J.-H., Ko, D.-H., Sohn, H.
Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity
Thin Solid Films 519 (22), pp. 8119-8124 2011

Li, Y., Long, S., Liu, Q., Lu, H., Liu, S., Liu, M.
An overview of resistive random access memory devices
Chinese Science Bulletin 56 (28-29), pp. 3072-3078 2011

Liu, Z.Q., Leusink, D.P., Lu, W.M., Wang, X., Yang, X.P., Gopinadhan, K., Lin, Y.T., (...), Ariando
Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
Physical Review B - Condensed Matter and Materials Physics 84 (16), art. no. 165106 2011

Chai, Y., Wu, Y., Takei, K., Chen, H.-Y., Yu, S., Chan, P.C.H., Javey, A., Wong, H.-S.P.
Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon
IEEE Transactions on Electron Devices 58 (11), art. no. 6026917, pp. 3933-3939 2011

Liu, L.F., Chen, Y.S., Kang, J.F., Wang, Y., Han, D.D., Liu, X.Y., Zhang, X.
Unipolar resistive switching and mechanism in Gd-doped-TiO 2-based resistive