| 년도 |
내용 |
자료 |
| 2022 |
Dae Seon Kwon, Tae Kyun Kim, Junil Lim, Haengha Seo, Heewon Paik, and Cheol Seong Hwang*,
Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer,
ACS Applied Electronic Materials, 4(4), (2022)
|
 |
| 2022 |
Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung-Hae Choi, and Cheol Seong Hwang*,
The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors,
Advanced Electronic Materials, 2200099, (2022)
|
|
| 2021 |
Dae Seon Kwon, Woojin Jeon, Dong Gun Kim, Tae Kyun Kim, Haengha Seo, Junil Lim, and Cheol Seong Hwang*,
Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method,
ACS Applied Materials & Interfaces, 13(20), (2021)
|
|
| 2021 |
Dong Gun Kim, Hae-Ryoung Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Heewon Paik, Woongkyu Lee*, and Cheol Seong Hwang*,
Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate,
Journal of Physics D: Applied Physics, 54(18), 185110 (2021)
|
|
| 2021 |
Dong Gun Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Woongkyu Lee*, and Cheol Seong Hwang*,
Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates,
Advanced Electronic Materials, 7(2), 202000819 (2021)
|
|
| 2021 |
Dong Gun Kim, Cheol Hyun An, Sang Hyeon Kim, Dae Seon Kwon, Junil Lim, Woojin Jeon*, and Cheol Seong Hwang*,
Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate,
Journal of Materials Chemistry C, 9, 1572-1583 (2021)
|
|
| 2020 |
Dae Seon Kwon, Cheol Hyun An, Sang Hyeon Kim, Dong Gun Kim, Junil Lim, Woojin Jeon*, and Cheol Seong Hwang*,
Atomic layer deposition of Ru thin films using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru and the effect of ammonia treatment during the deposition,
Journal of Materials Chemistry C, 8, 6993-7004 (2020)
|
|
| 2019 |
Cheol Hyun An, Woojin Jeon, Sang Hyeon Kim, Cheol Jin Cho, Dae Seon Kwon, Dong Gun Kim, Woongkyu Lee*, and Cheol Seong Hwang*,
Substrate Effects on the Growth Behavior of Atomic-Layer-Deposited Ru Thin Films Using RuO4 Precursor and N2/H2 Mixed Gas,
The Journal of Physical Chemistry C, 123(36), 22539-22549 (2019)
|
|
| 2019 |
Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Yumin Kim, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, Junil Lim, and Cheol Seong Hwang*,
Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition,
physica status solidi (RRL)–Rapid Research Letters, 13(11), 1900373 (2019)
|
|
| 2019 |
Soon Hyung Cha, Cheol Hyun An, Seong Tak Cho, Dong-Gun Kim, Dae Seon Kwon, Jun Il Lim, Woojin Jeon*, and Cheol Seong Hwang*,
Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3-Based Dielectric for Further Scaling of Dynamic Random Access Memory,
physica status solidi (RRL)-Rapid Research Letters, 13(10), 1900282 (2019)
|
|
HOME > > 