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[Etc] [Press Release] Emergence of Negative Capacitance in Multidomain Ferroelectric–Paraelectric Nanocapacitors at Finite Bias£ºProfessor Satoshi Watanabe,Department of Materials Engineering,Assistant Professor Shusuke Kasamatsu,Institute for Solid State
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- ÀÛ¼ºÀÏ 2016-03-29 19:49:04
- Á¶È¸¼ö 1336
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The emergence of negative capacitance in the ultrathin ferroelectric/paraelectric bilayer capacitor under electrical bias is examined using first-principles simulation. An antiferroelectric-like behavior is predicted, and negative capacitance is shown to emerge when the monodomain state becomes stable after bias application. The polydomain–monodomain transition is also shown to be a source of capacitance enhancement.強ë¯ï³体ÚÝدªËªªª±ªë¡¸Ý¶ªÎë¯ï³á㡹発úÞªÎê«íÖåîÜ«·«ß«å«ìー«·«ç«óªËà÷Íí £ÚâÓô体«Ç«Ð«¤«¹Ú°á¬ûùªØªÎÔ³ªòô¬ª¯££º«Þ«Æ«ê«¢«ëÍï学専Íô Ô¤邉聡 教⣡¢Úªàõ研ϼᶠآáæâ³ÜÐ ð¾教ÚâÓô体«Ç«Ð«¤«¹ªÇªÏ¡¢ï³Ð¿ªËï³íªòõöﳪ·ª¿ªêۯﳪ·ª¿ªêª¹ªëª³ªÈªÇon/offªÎ«¹«¤«Ã«Áªä¡¢«Çー«¿ªÎ読ªßßöªªòú¼ªÃªÆª¤ªÞª¹¡£ª½ª·ªÆ¡¢«³«ó«Ô«åー«¿ªÎæÑß©àõÒöªä«Çー«¿é»ÕáªÎ増Óުϡ¢ÚâÓô体«Ç«Ð«¤«¹ªòá³úþûùª·ªÆªèªê狭ª¤ØüîݪËݧªýþªáªëÚ°á¬Ê¥ÍïÐüâúªËªèªÃªÆò¨ª¨ªéªìªÆª¤ªÞª¹¡£á³úþûùª·ªÆªâÔÒª¸ªèª¦ªËÔÑíªµª»ªëª¿ªáªËªÏ¡¢ï³気é»ÕáªÈû¼ªÐªìªë¡¢ï³圧ªòÊ¥ª¨ª¿ªÈªªËï³íªòõ모ªëÒöÕôªòë«ò¥ª¹ªëù±é©ª¬ª¢ªê¡¢å몤üµª¨ªìªÐ¡¢Øüîݪ¢ª¿ªêªÎï³気é»ÕáªòÍÔªáªëù±é©ª¬ª¢ªêªÞª¹¡£Øüîݪ¢ª¿ªêªÎï³気é»ÕáªÏ¡¢«Ç«Ð«¤«¹ñéªÇï³気ªò÷תµªÊª¤ï¾縁体ݻݪÎë¯ï³áãªËÝïÖǪ·¡¢ª½ªÎý§ªµªË概ªÍÚãÝïÖǪ·ªÞª¹ª¬¡¢úÞ状ªÇªÏ¡¢ë¯ï³áãªÎú¾ß¾ªâÚÝدûùªâÚª×âîܪÊùÚÍ£ªËÐΪŪ¤ªÆª¤ªÞª¹¡£¡¡ª½ª³ªÇõÌÐΡ¢¡¸Ý¶ªÎë¯ï³á㡹ªÈª¤ª¦¡¢è⪫ªéÊ¥ª¨ª¿ï³圧ªò増ø몵ª»ªëàõòõªòê󪹪ëÚªòõªò××éĪ¹ªëª³ªÈªÇ¡¢ÚÝدûùªòòäªáªºªËï³気é»Õáªò増ªäª¹ªÈª¤ª¦ð«äЪ¬ªÊªµªìªÆª¤ªÞª¹¡£ÔÔÌÈÓÞ学Úªàõ研ϼá¶Ø¢áæð¾教ªéªÎ研ϼ«°«ëー«×ªÏ¡¢ê«í・ï³íªÎÔѪªòåøö´ª¹ªëê«íÖåîܪʫ·«ß«å«ìー«·«ç«óªò«¹ー«Ñー«³«ó«Ô«åー«¿ß¾ªÇú¼ª¦ª³ªÈªÇ¡¢«Ç«Ð«¤«¹ñéªÎê«í数ËÁݪÎý§ªµªÎ強ë¯ï³体ÚÝدªËï³圧ªòÊ¥ª¨ª¿ªÈªªË¡¢ÝÂп«É«á«¤«óÏ°ð㪬á¼ã÷ª¹ªëª³ªÈªÇݶªÎë¯ï³á㪬発úÞª¹ªëѦϰªòôøªáªÆÙ¥ªéª«ªËª·ªÞª·ª¿¡£¡¡ª³ªÎà÷ÍýªËªèªê¡¢強ë¯ï³体ªÎݶªÎë¯ï³áãªÎ«Ç«Ð«¤«¹応éĪ˪Ī¤ªÆ×âÖåîܪÊ×êÜõª±ª¬ªÊªµªìªÞª·ª¿¡£ÚâÓô体«Ç«Ð«¤«¹ªÎªµªéªÊªëÚ°á¬ûù・ó¢îÝûùªËªèªë«³«ó«Ô«åー«¿ªä«¹«Þー«È«Õ«©«óªÊªÉªÎÍÔàõÒöûùª¬Ñ¢Ó⪵ªìªÞª¹¡£
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