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Name 우경석
Research area ReRAM
Adm Year 2017-1
E-mail kevinwoo@snu.ac.kr
년도 내용 자료
2022 Yoon Ho Jang†, Janguk Han†, Jihun Kim, Woohyun Kim, Kyung Seok Woo, Jaehyun Kim, and Cheol Seong Hwang* Graph Analysis with Multifunctional Self-Rectifying Memristive Crossbar Array Advanced Materials, 2209503 (2022).
2022 Kyung Seok Woo, Jaehyun Kim, Janguk Han, Woohyun Kim, Yoon Ho Jang & Cheol Seong Hwang Probabilistic computing using Cu0.1Te0.9/HfO2/Pt diffusive memristors Nature Communications, 13, 5762 (2022)
2021 Yoon Ho Jang, Woohyun Kim, Jihun Kim, Kyung Seok Woo, Hyun Jae Lee, Jeong Woo Jeon, Sung Keun Shim, Janguk Han, and Cheol Seong Hwang* Time-varying data processing with nonvolatile memristor-based temporal kernel Nature Communications, 12, 5727 (2021)
2021 Kyung Seok Woo, Jaehyun Kim, Janguk Han, Jin Myung Choi, Woohyun Kim, and Cheol Seong Hwang* A High-Speed True Random Number Generator Based on a CuxTe1-x Diffusive Memristor Advanced Intelligent Systems, 2100062 (2021)
2020 Dae Eun Kwon, Jihun Kim, Young Jae Kwon, Kyung Seok Woo, Jung Ho Yoon, and Cheol Seong Hwang Area-Type Electronic Bipolar Resistive Siwtching of Pt/Al2O3/Si3N3.0/Ti with Forming-Free, Self-Rectification, and Nonlinear Characteristics physica status solidi (RRL)–Rapid Research Letters., DOI: 10.1002/pssr.202000209 (2020)
2020 Kyung Seok Woo, Yongmin Wang, Yumin Kim, Jihun Kim, Woohyun Kim, and Cheol Seong Hwang A Combination of a Volatile-Memristor-Based True Random-Number Generator and a Nonlinear-Feedback Shift Register for High-Speed Encryption Adv. Electron. Mater, 2020, 1901117, DOI:10.1002/aelm.201901117
2020 Dae Eun Kwon, Yumin Kim, Hae Jin Kim, Young Jae Kwon, Kyung Seok Woo, Jung Ho Yoon, and Cheol Seong Hwang Bipolar resistive switching property of Si3N4-x thin films depending on N deficiency Journal of Materials Chemistry C, 8, 1755-1761 (2020)
2019 Woohyun Kim, Chanyoung Yoo, Eui-Sang Park, Manick Ha, Jeong Woo Jeon, Gil Seop Kim, Kyung Seok Woo, Yoon Kyeung Lee*, and Cheol Seong Hwang* Electroforming-free Bipolar Resistive Switching in GeSe Thin Films with a Ti-containing Electrode ACS Appl. Mater. Interfaces, 11, 42, 38910-38920 (2019)
2018 Kyung Seok Woo, Yongmin Wang, Jihun Kim, Yumin Kim, Young Jae Kwon, Jung Ho Yoon, Woohyun Kim, and Cheol Seong Hwang A True Random Number Generator Using Threshold-Switching-Based Memristors in an Efficient Circuit Design Advanced Electronic Materials, DOI: 10.1002/aelm.201800543 (2018)
2018 Woohyun Kim, Sijung Yoo, Chanyoung Yoo, Eui-Sang Park, Jeongwoo Jeon, Young Jae Kwon, Kyung Seok Woo, Han Joon Kim, Yoon Kyeung Lee* and Cheol Seong Hwang* Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch Nanotechnology, 29, 365202 (2018)

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